Search results for: Silicon waveguide

Authors: Qing Fang, Lianxi Jia, Junfeng Song, Chao Li, Xianshu Luo, Mingbin Yu, Guoqiang Lo

Abstract:

In this paper, we demonstrated a 1 × 4 silicon photonic cascaded arrayed waveguide grating, which is fabricated on a SOI wafer with a 220 nm top Si layer and a 2µm buried oxide layer. The measured on-chip transmission loss of this cascaded arrayed waveguide grating is ~ 5.6 dB, including the fiber-to-waveguide coupling loss. The adjacent crosstalk is 33.2 dB. Compared to the normal single silicon photonic arrayed waveguide grating with a crosstalk of ~ 12.5 dB, the crosstalk of this device has been dramatically increased.

Keywords: Silicon photonic, arrayed waveguide grating, high-crosstalk, cascaded structure.

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Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

Keywords: Infrared detector, Schottky-barrier, Silicon waveguide, Silicon photonics

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Authors: Qing Fang, Lianxi Jia, JunFeng Song, Xiaoguang Tu, Mingbin Yu, Andy Eu-jin Lim, Guo Qiang Lo

Abstract:

The first pn-type carrier-induced silicon Bragg-grating filter is demonstrated. The extinction-ratio modulations are 11.5 dB and 10 dB with reverse and forward biases, respectively. 8-Gpbs data rate is achieved with a reverse bias.

Keywords: Silicon photonics, Waveguide grating, Carrier-induced, Extinction-ratio modulation.

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Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

Abstract:

Silicon photonics is merging as a unified platform for driving photonic based telecommunications and for local photonic based interconnect but it suffers from large footprint as compared with the nanoelectronics. Plasmonics is an attractive alternative for nanophotonics. In this work, two CMOS compatible plasmonic waveguide platforms are compared. One is the horizontal metal-insulator-Si-insulator-metal nanoplasmonic waveguide and the other is metal-insulator-Si hybrid plasmonic waveguide. Various passive and active photonic devices have been experimentally demonstrated based on these two plasmonic waveguide platforms.

Keywords: Plasmonics, on-chip integration, Silicon photonics.

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Authors: Isao Tomita

Abstract:

The principle of all-silicon Raman lasers for an output wavelength of 1.3 μm is presented, which employs quasi-phase-matched structures and resonators to enhance the output power. 1.3-μm laser beams for GE-PONs in FTTH systems generated from a silicon device are very important because such a silicon device can be monolithically integrated with the silicon planar lightwave circuits (Si PLCs) used in the GE-PONs. This reduces the device fabrication processes and time and also optical losses at the junctions between optical waveguides of the Si PLCs and Si laser devices when compared with 1.3-μm III-V semiconductor lasers set on the Si PLCs employed at present. We show that the quasi-phase-matched Si Raman laser with resonators can produce about 174 times larger laser power at 1.3 μm (at maximum) than that without resonators for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2 dB/cm, pumped at power 10 mW, where the length of the waveguide is 3 mm and its cross-section is (1.5 μm)2.

Keywords: All-silicon raman laser, FTTH, GE-PON, quasi-phase-matched structure, resonator.

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Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

Although silicon photonic devices provide a significantly larger bandwidth and dissipate a substantially less power than the electronic devices, they suffer from a large size due to the fundamental diffraction limit and the weak optical response of Si. A potential solution is to exploit Si plasmonics, which may not only miniaturize the photonic device far beyond the diffraction limit, but also enhance the optical response in Si due to the electromagnetic field confinement. In this paper, we discuss and summarize the recently developed metal-insulator-Si-insulator-metal nanoplasmonic waveguide as well as various passive and active plasmonic components based on this waveguide, including coupler, bend, power splitter, ring resonator, MZI, modulator, detector, etc. All these plasmonic components are CMOS compatible and could be integrated with electronic and conventional dielectric photonic devices on the same SOI chip. More potential plasmonic devices as well as plasmonic nanocircuits with complex functionalities are also addressed.

Keywords: Silicon nanoplasmonics, Silicon nanophotonics, Onchip integration, CMOS

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Authors: Shilpa N. Kulkarni, Sujata R. Patrikar

Abstract:

In the present work, an attempt is made to understand electromagnetic field confinement in a subwavelength waveguide structure using concepts of quantum mechanics. Evanescent field in the waveguide is looked as inability of the photon to get confined in the waveguide core and uncertainty of position is assigned to it. The momentum uncertainty is calculated from position uncertainty. Schrödinger wave equation for the photon is written by incorporating position-momentum uncertainty. The equation is solved and field distribution in the waveguide is obtained. The field distribution and power confinement is compared with conventional waveguide theory. They were found in good agreement with each other.

Keywords: photon localization in waveguide, photon tunneling, quantum confinement of light, Schrödinger wave equation, uncertainty principle.

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Authors: A. Mobini, K. Saghafi, V. Ahmadi

Abstract:

in this paper we modified a simple two-dimensional photonic crystal waveguide by creating micro cavity resonators in order to increase the output light emission which can be applicable to photonic integrated circuits. The micro cavity resonators are constructed by removing two tubes close to the waveguide output. Coupling emitted light from waveguide with those micro cavities, results increasing intensity of waveguide output light. Inserting a tube in last row of waveguide, we have improved directionality of output light beam.

Keywords: photonic crystal, waveguide, micro cavity resonators, directional emission

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Authors: N. Aravantinos-Zafiris, M. M. Sigalas

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In this work we numerically examine structures which could confine light in nanometer areas. A system consisting of two silicon disks with in plane separation of a few tens of nanometers has been studied first. The normalized unitless effective mode volume, Veff, has been calculated for the two lowest whispering gallery mode resonances. The effective mode volume is reduced significantly as the gap between the disks decreases. In addition, the effect of the substrate is also studied. In that case, Veff of approximately the same value as the non-substrate case for a similar two disk system can be obtained by using disks almost twice as thick. We also numerically examine a structure consisting of a circular slot waveguide which is formed into a silicon disk resonator. We show that the proposed structure could have high Q resonances thus raising the belief that it is a very promising candidate for optical interconnects applications. The study includes several numerical calculations for all the geometric parameters of the structure. It also includes numerical simulations of the coupling between a waveguide and the proposed disk resonator leading to a very promising conclusion about its applicability.

Keywords: Disk resonators, field enhancement, optical interconnect, slot waveguides.

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Authors: Keigo Matsuura, Isao Tomita

Abstract:

We have studied a method to widen the spectrum of optical pulses that pass through an InGaAsP waveguide for application to broadband optical communication. In particular, we have investigated the competitive effect between spectral broadening arising from nonlinear refraction (optical Kerr effect) and shrinking due to two photon absorption in the InGaAsP waveguide with χ(3) nonlinearity. The shrunk spectrum recovers broadening by the enhancement effect of the nonlinear refractive index near the bandgap of InGaAsP with a bandgap wavelength of 1490 nm. The broadened spectral width at around 1525 nm (196.7 THz) becomes 10.7 times wider than that at around 1560 nm (192.3 THz) without the enhancement effect, where amplified optical pulses with a pulse width of ∼ 2 ps and a peak power of 10 W propagate through a 1-cm-long InGaAsP waveguide with a cross-section of 4 (μm)2.

Keywords: InGaAsP Waveguide, χ(3) Nonlinearity, Spectral Broadening.

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Authors: Ashot Navasardian, Mariam Vardanian, Vladik Vardanian

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The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit.

Keywords: Metallurgical grade silicon, solar grade silicon, impurity, refining, plasma.

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Authors: D. G. Piliposyan

Abstract:

Propagation of electro-elastic waves in a piezoelectric waveguide with finite stacks and a defect layer is studied using a modified transfer matrix method. The dispersion equation for a periodic structure consisting of unit cells made up from two piezoelectric materials with metallized interfaces is obtained. An analytical expression, for the transmission coefficient for a waveguide with finite stacks and a defect layer, that is found can be used to accurately detect and control the position of the passband within a stopband. The result can be instrumental in constructing a tunable waveguide made of layers of different or identical piezoelectric crystals and separated by metallized interfaces.

Keywords: Defect mode, Bloch waves, periodic phononic crystal, piezoelectric composite waveguide.

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Authors: Maidul Islam, Dibakar Roy Chowdhury, Gagan Kumar

Abstract:

We investigate sensing capabilities of a planar plasmonic THz waveguide. The waveguide is comprised of one dimensional array of periodically arranged sub wavelength scale corrugations in the form of rectangular dimples in order to ensure the plasmonic response. The THz waveguide transmission is observed for polyimide (as thin film) substance filling the dimples. The refractive index of the polyimide film is varied to examine various sensing parameters such as frequency shift, sensitivity and Figure of Merit (FoM) of the fundamental plasmonic resonance supported by the waveguide. In efforts to improve sensing characteristics, we also examine sensing capabilities of a plasmonic waveguide having V shaped corrugations and compare results with that of rectangular dimples. The proposed study could be significant in developing new terahertz sensors with improved sensitivity utilizing the plasmonic waveguides.

Keywords: Terahertz, plasmonic, sensor, sub-wavelength structures.

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Authors: Ahmed Nouainia, Mohamed Hajji, Taoufik Aguili

Abstract:

In this paper, an electromagnetic analysis is presented for describing the influence of shielding in a rectangular waveguide. A hybridization based on the method of moments combined to the generalized equivalent circuit MoM-GEC is used to model the problem. This is validated by applying the MoM-GEC hybridization to investigate a diffraction structure. It consists of electromagnetic diffraction by an iris in a rectangular waveguide. Numerical results are shown and discussed and a comparison with FEM and Marcuvitz methods is achieved.

Keywords: Inductive irises, MoM-GEC, waveguide, shielding.

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Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

Abstract:

Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.

Keywords: Silicon photonics, CMOS, Integration.

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Authors: W. L. Liong, Srimala Sreekantan, Sabar D. Hutagalung

Abstract:

The effect of concentration of reduction agent of sodium borohydrate (NaBH4) on the properties of silicon nanoparticles synthesized via microemulsion route is reported. In this work, the concentration of the silicon tetrachloride (SiCl4) that served as silicon source with sodium hydroxide (NaOH) and polyethylene glycol (PEG) as stabilizer and surfactant, respectively, are keep fixed. Four samples with varied concentration of NaBH4 from 0.05 M to 0.20 M were synthesized. It was found that the lowest concentration of NaBH4 gave better formation of silicon nanoparticles.

Keywords: Microelmusion, nanoparticles, reduction, silicon

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Authors: Badar Muneer, Waseem Shabir, Faisal Karim Shaikh

Abstract:

Substrate Integrated waveguide based 6-element array of Planar Inverted F antenna (PIFA) has been presented and analyzed parametrically in this paper. The antenna is fed with coupled transverse slots on a plate laminated waveguide cavity to ensure wide bandwidth and simplicity of feeding network. The two-layer structure has one layer dedicated for feeding network and the top layer dedicated for radiating elements. It has been demonstrated that the presented feeding technique for feeding such class of array antennas can be far simple in structure and miniaturized in size when it comes to designing large phased array antenna systems. A good return loss and standing wave ratio of 2:1 has been achieved while maintaining properties of typical PIFA.

Keywords: Feeding network, laminated waveguide, PIFA, transverse slots.

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Authors: M. R. Gad El- Kareem, A. M. K. Abdel Aal, A. Y. Mohamed

Abstract:

During 2011 and 2012 seasons, Zaghloul date palms received four sprays of silicon (Si) at 0.05 to 0.1% and selenium (Se) at 0.01 to 0.02%. Growth, nutritional status, yield as well as physical and chemical characteristics of the fruits in response to application of silicon and selenium were investigated. Single and combined applications of silicon at 0.05 to 0.1% and selenium at 0.01 to 0.02% was very effective in enhancing the leaf area, total chlorophylls, percentages of N, P and K in the leaves, yield, bunch weight as well as physical and chemical characteristics of the fruits in relative to the check treatment. Silicon was superior to selenium in this respect. Combined application was favorable than using each alone in this connection. Treating Zaghloul date palms four times with a mixture of silicon at 0.05% + selenium at 0.01% resulted in an economical yield and producing better fruit quality.

Keywords: Date Palms, Zaghloul, Silicon, Selenium, leaf area.

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Authors: A. Ould-Abbas, M. Bouchaour, , M. Madani, D. Trari, O. Zeggai, M. Boukais, N.-E.Chabane-Sari

Abstract:

The porous silicon (PS), formed from the anodization of a p+ type substrate silicon, consists of a network organized in a pseudo-column as structure of multiple side ramifications. Structural micro-topology can be interpreted as the fraction of the interconnected solid phase contributing to thermal transport. The reduction of dimensions of silicon of each nanocristallite during the oxidation induced a reduction in thermal conductivity. Integration of thermal sensors in the Microsystems silicon requires an effective insulation of the sensor element. Indeed, the low thermal conductivity of PS consists in a very promising way in the fabrication of integrated thermal Microsystems.In this work we are interesting in the measurements of thermal conductivity (on the surface and in depth) of PS by the micro-Raman spectroscopy. The thermal conductivity is studied according to the parameters of anodization (initial doping and current density. We also, determine porosity of samples by spectroellipsometry.

Keywords: micro-Raman spectroscopy, mono-crysatl silicon, porous silicon, thermal conductivity

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Authors: N. I. Kargin, G. K. Safaraliev, A. S. Gusev, A. O. Sultanov, N. V. Siglovaya, S. M. Ryndya, A. A. Timofeev

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In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experimental samples were obtained by the method of chemical vapor deposition and investigated by scanning electron microscopy. Analytic expressions were obtained for the effective diffusion factor and carbon atoms diffusion length in a porous system. The proposed model takes into account the processes of Knudsen diffusion, coagulation and overgrowing of pores during the formation of a silicon carbide layer.

Keywords: Silicon carbide, porous silicon, carbonization, electrochemical etching, diffusion.

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Authors: Shahrazed Medeghri, Saad Hamzaoui, Mokhtar Zerdali

Abstract:

The metallurgical grade silicon (MG-Si) is obtained from the reduction of silica (SiO₂) in an induction furnace or an electric arc furnace. Impurities inherent in reduction process also depend on the quality of the raw material used. Among the applications of the silicon, it is used as a substrate for the photovoltaic conversion of solar energy and this conversion is wider as the purity of the substrate is important. Research is being done where the purpose is looking for new methods of manufacturing and purification of silicon, as well as new materials that can be used as substrates for the photovoltaic conversion of light energy. In this research, the technique of production of silicon in an induction furnace, using a high vacuum for fusion. Diatomaceous Silica (SiO2) used is 99 mass% initial purities, the carbon used is 6N of purity and the particle size of 63μm as starting materials. The final achieved purity of the material was above 50% by mass. These results demonstrate that this method is a technically reliable, and allows obtaining a better return on the amount 50% of silicon.

Keywords: Induction, amorphous silica, carbon microstructure, silicon.

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Authors: António L. Topa

Abstract:

A complete spectral representation for the electromagnetic field of planar multilayered waveguides inhomogeneously filled with omega media is presented. The problem of guided electromagnetic propagation is reduced to an eigenvalue equation related to a 2 ´ 2 matrix differential operator. Using the concept of adjoint waveguide, general bi-orthogonality relations for the hybrid modes (either from the discrete or from the continuous spectrum) are derived. For the special case of homogeneous layers the linear operator formalism is reduced to a simple 2 ´ 2 coupling matrix eigenvalue problem. Finally, as an example of application, the surface and the radiation modes of a grounded omega slab waveguide are analyzed.

Keywords: Metamaterials, linear operators, omega media, layered waveguide, orthogonality relations

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Authors: J. Hajri, H. Hrizi, N. Sboui, H. Baudrand

Abstract:

This paper presents a study of SIW circuits (Substrate Integrated Waveguide) with a rigorous and fast original approach based on Iterative process (WCIP). The theoretical suggested study is validated by the simulation of two different examples of SIW circuits. The obtained results are in good agreement with those of measurement and with software HFSS.

Keywords: Convergence study, HFSS, Modal decomposition, SIW Circuits, WCIP Method.

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Authors: Masayoshi Matsui, Akiko Nakahara, Akiko Takatsu, Kenji Kato, Naoki Matsuda

Abstract:

The state and stability of hemoglobin adsorbed on the glass surface was investigated using slab optical waveguide (SOWG) spectroscopy. The peak position of the absorption band of hemoglobin adsorbed on the glass surface was same as that of the hemoglobin in solution. This result suggests that no significant denaturation occurred by adsorption. The adsorption of hemoglobin is relatively strong that the hemoglobin molecules even remained adsorbed after rinsing the cell with buffer solution. The peak shift caused by the reduction of adsorbed hemoglobin was also observed.

Keywords: hemoglobin, reduction, slab optical waveguide spectroscopy, solid/liquid interface.

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Authors: Vivek Bharti, Inderpreet Kaur, Saurabh Verma, Renu Gangwar, Hari Kumar Singh

Abstract:

This work presents a dual-band Coplanar Waveguide (CPW) fed rectangular patch antenna designed for applications in Industrial, Scientific, and Medical (ISM) Band sensing. Fabricated on a cost-effective FR-4 substrate with specific dimensions, the antenna incorporates a rectangular slot and a copper patch, optimized through simulation to achieve desired characteristics, particularly focusing on the reflection coefficient. A unique feature is introduced through the integration of copper cells forming a Partially Reflecting Surface (PRS) to feed the antenna. Dual-band functionality is achieved, covering frequencies of 1.28 GHz-1.3 GHz and 4.9 GHz-5.2 GHz, catering to diverse communication needs within these frequency ranges. The addition of a superstrate enhances the antenna’s gain, resulting in 4.5 dBi at 1.28 GHz-1.3 GHz and 6.5 dBi at 4.9 GHz-5.2 GHz, with an efficiency of 58%.

Keywords: ISM, Coplanar waveguide fed, superstrate, circularly polarized.

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Authors: Li Long, Thomas Ortlepp

Abstract:

The transport properties of carriers in polycrystalline silicon film affect the performance of polycrystalline silicon-based devices. They depend strongly on the grain structure, grain boundary trap properties and doping concentration, which in turn are determined by the film deposition and processing conditions. Based on the properties of charge carriers, phonons, grain boundaries and their interactions, the thermoelectric properties of polycrystalline silicon are analyzed with the relaxation time approximation of the Boltzmann transport equation. With this approach, thermal conductivity, electrical conductivity and Seebeck coefficient as a function of grain size, trap properties and doping concentration can be determined. Experiment on heavily doped polycrystalline silicon is carried out and measurement results are compared with the model.

Keywords: Conductivity, polycrystalline silicon, relaxation time approximation, Seebeck coefficient, thermoelectric property.

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Authors: Athanasios Theoharidis, Thomas Kamalakis, Ioannis Neokosmidis, Thomas Sphicopoulos

Abstract:

In this paper, the application of the Mode Matching (MM) method in the case of photonic crystal waveguide discontinuities is presented. The structure under consideration is divided into a number of cells, which supports a number of guided and evanescent modes. These modes can be calculated numerically by an alternative formulation of the plane wave expansion method for each frequency. A matrix equation is then formed relating the modal amplitudes at the beginning and at the end of the structure. The theory is highly efficient and accurate and can be applied to study the transmission sensitivity of photonic crystal devices due to fabrication tolerances. The accuracy of the MM method is compared to the Finite Difference Frequency Domain (FDFD) and the Adjoint Variable Method (AVM) and good agreement is observed.

Keywords: Optical Communications, Integrated Optics, Photonic Crystals, Optical Waveguide Discontinuities.

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Authors: Subal Kar, Amitesh Kumar, A. Majumder, S. K. Ghosh, S. Saha, S. S. Sikdar, T. K. Saha

Abstract:

CRLH (composite right/left-handed) based and SRR (split-ring resonator) based filters have been designed at microwave frequency which can provide better performance compared to conventional edge-coupled band-pass filter designed around the same frequency, 2.45 GHz. Both CRLH and SRR are unit cells used in metamaterial design. The primary aim of designing filters with such structures is to realize size reduction and also to realize novel filter performance. The CRLH based filter has been designed in microstrip transmission line, while the SRR based filter is designed with SRR loading in waveguide. The CRLH based filter designed at 2.45 GHz provides an insertion loss of 1.6 dB with harmonic suppression up to 10 GHz with 67 % size reduction when compared with a conventional edge-coupled band-pass filter designed around the same frequency. One dimensional (1-D) SRR matrix loaded in a waveguide shows the possibility of realizing a stop-band with sharp skirts in the pass-band while a stop-band in the pass-band of normal rectangular waveguide with tailoring of the dimensions of SRR unit cells. Such filters are expected to be very useful for communication systems at microwave frequency.

Keywords: BPF, CRLH, Harmonic, Metamaterial, SRR, Waveguide.

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Authors: V.Fathipour, M. A. Malakootian, S. Fathipour, M. Fathipour

Abstract:

In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.

Keywords: High Frequency MOSFET, Design of RF LDMOS, Strained-Silicon, LDMOS.

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Authors: Wei Sun, Ruilin Zheng, Xuyuan Chen

Abstract:

Micro power sources are required to be used in autonomous microelectromechanical system (MEMS). In this paper,  we designed and fabricated a three dimensional (3D) MEMS supercapacitor, which is consisting of conformal silicon  dioxide/titanium/polypyrrole (PPy) layers on silicon substrate. At first, ''through-structure'' was fabricated on the silicon substrate by high-aspect-ratio deep reactive ion etching (DRIE) method, which enlarges the available surface area significantly. Then the SiO2/Ti/PPy layers grew sequentially on the ³through-structure´. Finally, the supercapacitor was investigated by electrochemical methods.

Keywords: MEMS, Supercapacitor, DRIE, 3D.

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