Mao-An Chen and Chien-Chen Diao and Chia-Cheng Huang and Chin-Guo Kuo and Cheng-Fu Yang and Yen-Lin Chen
Using Printing Method and Post Heat Treatment to Fabricate CIS Absorber Layer
620 - 623
2014
8
7
International Journal of Physical and Mathematical Sciences
https://publications.waset.org/pdf/9998743
https://publications.waset.org/vol/91
World Academy of Science, Engineering and Technology
In this study, the Moelectrode thin films were deposited using twostepped process and the high purity copper indium selenidebased powder (CuInSe2, CIS) was fabricated by using hydrothermal process by Nanowin Technology Co. Ltd. Because the CIS powder was aggregated into microscale particles, the CIS power was ground into nanoscale particles. 6 wt CIS particles were mixed and dispersed into isopropyl alcohol (IPA). A new nonvacuum thinfilm deposition process, spray coating method (SPM), was investigated to deposit the highdensified CIS absorber layers. 0.1 ml CIS solution was sprayed on the 20 mm×10 mm Moglass substrates and then the CuInSe2 thin films were annealed in a selenization furnace using N2 as atmosphere. The annealing temperature and time were set at 550oC and 5 min, and 0.0g0.6g extra Se content was added in the furnace. The influences of extra Se content on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.
Open Science Index 91, 2014