Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 7

Search results for: silicide

7 Silicon-Waveguide Based Silicide Schottky- Barrier Infrared Detector for on-Chip Applications

Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

Keywords: Infrared detector, Schottky-barrier, Silicon waveguide, Silicon photonics

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6 Switching Behaviors of HfO2/NiSix Based RRAM

Authors: Z. X. Chen, Z. Fang, X. P. Wang, G. -Q. Lo, D. -L. Kwong, Y. H. Wu

Abstract:

This paper presents a study of Ni-silicides as the bottom electrode of HfO2-based RRAM. Various silicidation conditions were used to obtain different Ni concentrations within the Ni-silicide bottom electrode, namely Ni2Si, NiSi, and NiSi2. A 10nm HfO2 switching material and 50nm TiN top electrode was then deposited and etched into 500nm by 500nm square RRAM cells. Cell performance of the Ni2Si and NiSi cells were good, while the NiSi2 cell could not switch reliably, indicating that the presence of Ni in the bottom electrode is important for good switching.

Keywords: HfO2-based, Ni-silicide, NiSi, resistive RAM (RRAM).

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5 Preparation of CuAlO2 Thin Films on Si or Sapphire Substrate by Sol-Gel Method Using Metal Acetate or Nitrate

Authors: Takashi Ehara, Takayoshi Nakanishi, Kohei Sasaki, Marina Abe, Hiroshi Abe, Kiyoaki Abe, Ryo Iizaka, Takuya Sato

Abstract:

CuAlO2 thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO2 observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO2 have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO2 peaks, then, the CuAlO2 peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO2 peak. In the present, we ascribe these peaks as metal silicide.

Keywords: CuAlO2, silicide, thin films, transparent conducting oxide, sol-gel.

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4 Photoluminescence Properties of β-FeSi2 on Cu- or Au-coated Si

Authors: Kensuke Akiyama, Satoru Kaneko, Takeshi Ozawa, Kazuya Yokomizo, Masaru Itakura

Abstract:

The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

Keywords: iron silicide, semiconductor, epitaxial, photoluminescence.

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3 Measurement of I-V Characteristics of a PtSi/p-Si Schottky Barrier Diode at low Temperatures

Authors: Somayeh Gholami, Meysam Khakbaz

Abstract:

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.

Keywords: Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.

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2 Formation of Protective Silicide-Aluminide Coating on Gamma-TiAl Advanced Material

Authors: S. Nouri

Abstract:

In this study, the Si-aluminide coating was prepared on gamma-TiAl [Ti-45Al-2Nb-2Mn-1B (at. %)] via liquid-phase slurry procedure. The high temperature oxidation resistance of this diffusion coating was evaluated at 1100 °C for 400 hours. The results of the isothermal oxidation showed that the formation of Si-aluminide coating can remarkably improve the high temperature oxidation of bare gamma-TiAl alloy. The identification of oxide scale microstructure showed that the formation of protective Al2O3+SiO2 mixed oxide scale along with a continuous, compact and uniform layer of Ti5Si3 beneath the surface oxide scale can act as an oxygen diffusion barrier during the high temperature oxidation. The other possible mechanisms related to the formation of Si-aluminide coating and oxide scales were also discussed.

Keywords: Gamma-TiAl alloy, Si-aluminide coating, slurry procedure, high temperature oxidation.

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1 Optimization of HALO Structure Effects in 45nm p-type MOSFETs Device Using Taguchi Method

Authors: F. Salehuddin, I. Ahmad, F. A. Hamid, A. Zaharim, H. A. Elgomati, B. Y. Majlis, P. R. Apte

Abstract:

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm.

Keywords: Optimization, p-type MOSFETs device, HALO Structure, Taguchi Method.

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