@article{(Open Science Index):https://publications.waset.org/pdf/10005226, title = {Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit}, author = {Ahmed Shariful Alam and Abu Hena M. Mustafa Kamal and M. Abdul Rahman and M. Nasmus Sakib Khan Shabbir and Atiqul Islam}, country = {}, institution = {}, abstract = {According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V. }, journal = {International Journal of Nuclear and Quantum Engineering}, volume = {9}, number = {3}, year = {2015}, pages = {405 - 410}, ee = {https://publications.waset.org/pdf/10005226}, url = {https://publications.waset.org/vol/99}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 99, 2015}, }