%0 Journal Article
	%A Takashi Ehara and  Takayoshi Nakanishi and  Kohei Sasaki and  Marina Abe and  Hiroshi Abe and  Kiyoaki Abe and  Ryo Iizaka and  Takuya Sato
	%D 2016
	%J International Journal of Chemical and Molecular Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 120, 2016
	%T Preparation of CuAlO2 Thin Films on Si or Sapphire Substrate by Sol-Gel Method Using Metal Acetate or Nitrate
	%U https://publications.waset.org/pdf/10006079
	%V 120
	%X CuAlO2 thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO2 observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO2 have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO2 peaks, then, the CuAlO2 peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO2 peak. In the present, we ascribe these peaks as metal silicide.

	%P 1482 - 1485