Silicon-Waveguide Based Silicide Schottky- Barrier Infrared Detector for on-Chip Applications
We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1074710Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1784
 S. J. Koester, J. D. Schaub, G. Dehlinger, and J. 0. Chu, "Germanium¬on-SOI infrared detectors for integrated photonic applications," IEEE J. Sel. Topics Quantum Electron, vol. 12, pp. 1489-1502, 2006.
 P. G. Kik, A. Polman, S. Libertino, and S. Coffa, "Design and performance of an erbium-doped silicon waveguide detector operating at 1.5 pm," J. Lightwave Technol., vol. 20, pp. 834-839, 2002.
 J. B. D. Bradley, P. E. Jessop, and A. P. Knights, "Silicon-waveguide integrated optical power monitor with enhanced sensitivity at 1550 nm," Appl. Phys. Lett., vol. 86, art. 241103, 2005.
 W. A. Cabanski and M. J. Schulz, "Electronic and IR-optical properties of silicide/silicon interfaces," Infrared Phys. vol. 32, pp. 29-44, 1991.
 R. H. Fowler, "The analysis of photoelectric sensitivity curves for clean metals at various temperatures," Phys. Rev., vol. 38, pp. 45-56, 1931.
 S. Y. Zhu, M. B. Yu, G. Q. Lo, and D. L. Kwong, "Near-infrared waveguide-based nickel silicide Schottky-barrier photodetector for optical communications," Appl. Phys. Lett., vol. 92, art. 081103, 2008.
 M. Amiotti, A. Borghesi, G. Guizzetti, and F. Nava, "Optical properties of polycrystalline nickel silicides," Physical Review B, vol. 42, pp. 8939¬46, 1990.
 J. Y. Duboz, P. A. Badoz, J. Henz, and H. von Kanel, "Near-infrared optical properties of CoSi2 thin films," J. Appl. Phys., vol. 68, pp. 2346-2350, 1990.
 J. M. Mooney, "Infrared optical absorption of thin PtSi films between 1 and 6 gm." J. Appl. Phys., vol. 64, pp. 4664-4667, 1988.
 J. Martin Mooney and J. Silverman, "The theory of hot-electron photoemission in Schottky-barrier IR detectors," IEEE Trans. Electron Devices, vol. 32, pp. 33-39, 1985.
 J. Kurianski, J. Van Damme, J. Vermeiren, K. Maex, and C. Claeys, "Nickel silicide Schottky barrier detectors for short wavelength infrared applications," Proc. SPIE 1308 Infrared detectors and focal plane arrays, pp. 27-35, 1990.
 V. E. Vickers, "Model of Schottky barrier hot-electron-mode photodetection," App/. Opt., vol. 10, pp. 2190-2192, 1971.
 G. Abaeiani, V. Ahmadi, and K. Saghafi, 'Design and analysis of resonant cavity enhanced-waveguide photodetectors for microwave photonic applications," IEEE Photonics Technology Lett., vol. 18, pp. 1597-1599, 2006.
 M. Lipson, "Guiding, modulating, and emitting light on silicon —challenges and opportunities," J. Lightwave technology, vol. 23, pp. 4222-4238, 2005.