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Preparation of CuAlO2 Thin Films on Si or Sapphire Substrate by Sol-Gel Method Using Metal Acetate or Nitrate

Authors: Takashi Ehara, Takayoshi Nakanishi, Kohei Sasaki, Marina Abe, Hiroshi Abe, Kiyoaki Abe, Ryo Iizaka, Takuya Sato

Abstract:

CuAlO2 thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO2 observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO2 have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO2 peaks, then, the CuAlO2 peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO2 peak. In the present, we ascribe these peaks as metal silicide.

Keywords: CuAlO2, silicide, thin films, transparent conducting oxide, sol-gel.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1128169

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References:


[1] H. Kim, A. Pique, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi and D. B. Chrisey, “Electrical, optical and structural properties of indium-tin-oxude thin films for organic light emitting devices” J. Appl. Phys., vol. 86, pp. 6451-6461, 1999.
[2] H. Agura, A. Suzuki, T. Matsushita, T. Aoki, and M. Okuda, “Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition” Thin Solid Films, vol. 445, pp. 263-267, 2003.
[3] S. -M. Park, T. Ikegami, and K. Ebihara, “Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition” Thin Solid Films, vol. 513, pp. 90-94, 2006.
[4] H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, and H. Hosono “P-type electrical conduction in transparent thin films of CuAlO2” Nature, vol. 389, pp. 939-942, 1997.
[5] H. Yanagi, S. Inoue, K. Ueda, H. Kawazoe, H. Hosono, and N. Hamada, “Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2” J. Appl. Phys., vol. 88, pp. 4159-4163, 2000.
[6] A. N. Banerjee and K. K. Chattopadhyay, “Size-dependent optical properties of sputter-deposited nanocrystalline p-type transparent CuAlO2 thin films” J. Appl. Phys., vol. 97, pp. 084308, 2005.
[7] N. Tsuboi, Y. Takahashi, S. Kobayashi, H. Shimizu, K. Kato, and F. Kaneko, “Delafossite CuAlO2 films prepared by reactive sputtering using Cu and Al targets” J. Phys.Chem. Solids, vol. 64, pp. 1671-1674, 2003.
[8] W. Lan, W. L. Cao, M. Zhang, X. Q. Liu, Y. Y. Wang, E. Q. Xie, and H. Yan, “Annealing effect on the structural, optical, and electrical properties of CuAlO2 films deposited by magnetron sputtering” J. Mater. Phys., vol. 44, pp. 1594-1599, 2009.
[9] M. Ohashi, Y. Ilda, and H. Morikawa, “Preparation of CuAlO2 films by wet chemical synthesis” J. Am. Ceram. Soc., vol.85, pp. 207-272, 2002.
[10] S. Goetzendoerfer C. Polenzky, S. Ulrich, and P. Loebmann, “Preparation of CuAlO2 and CuCrO2 thin films by sol-gel processing” Thin Solid Films, vol. 518, pp. 1153-1156, 2009.
[11] C. K. Ghosh, S. R. Popuri, T. U. Mahesh, and K. K. Chattopadhyay, “Preparation of nanocrystalline CuAlO2 through sol-gel route” J. Sol-Gel Sci. Technol., vol. 52, pp. 75-81, 2009.
[12] T. Ehara, and T. Nakanishi, “Preparation of CuAlO2 Thin Films by Sol-Gel Method Using Nitrate Solution Dip-Coating” MATEC Web Conf., vol 67, pp. 04012, 2016.