Search results for: Cu-Sn thin film

Authors: B. D. Polat, O. Keles

Abstract:

Physical vapor deposition under conditions of an obliquely incident flux results in a film formation with an inclined columnar structure. These columns will be oriented toward the vapor source because of the self-shadowing effect, and they are homogenously distributed on the substrate surface because of the limited surface diffusion ability of ad-atoms when there is no additional substrate heating.

In this work, the oblique angle electron beam evaporation technique is used to fabricate thin films containing inclined nanorods. The results demonstrate that depending on the thin film composition, the morphology of the nanorods is changed as well. The galvanostatic analysis of these thin film anodes reveals that a composite CuSn nanorods having approximately 900mAhg^-1 of initial discharge capacity, performs higher electrochemical performance compared to pure Sn nanorods containing anode material. The long cycle life and the advanced electrochemical properties of the nanostructured composite electrode might be attributed to its improved mechanical tolerance and enhanced electrical conductivity depending on the Cu presence in the nanorods.

Keywords: Cu-Sn thin film, oblique angle deposition, lithium ion batteries, anode.

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Authors: M. Babaeipour, M. Vejdanihemmat

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Optical properties of bulk and thin film of 1H-CaAlSi for two directions (1,0,0) and (0,0,1) were studied. The calculations are carried out by Density Functional Theory (DFT) method using full potential. GGA approximation was used to calculate exchange-correlation energy. The calculations are performed by WIEN2k package. The results showed that the absorption edge is shifted backward 0.82eV in the thin film than the bulk for both directions. The static values of the real part of dielectric function for four cases were obtained. The static values of the refractive index for four cases are calculated too. The reflectivity graphs have shown an intensive difference between the reflectivity of the thin film and the bulk in the ultraviolet region.

Keywords: 1H-CaAlSi, absorption, bulk, optical, thin film.

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Authors: Adekanmi M. Adeyinka, Onyedika V. Mbelu, Yaqub B. Adediji, Daniel I. Yahya

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Growing energy demand and the world's dependence on fossil fuel-based energy systems causing greenhouse gas emissions and climate change have intensified the need for utilizing renewable energy sources. Solar energy can be converted directly into electricity via photovoltaic solar cells. Thin-film solar cells are preferred due to their cost effectiveness, less material consumption, flexibility, and rising trend in efficiency. In this paper, Gallium arsenide (GaAs), Amorphous silicon (a-Si), Copper Indium Gallium Selenide (CIGS), and Cadmium Telluride (CdTe) thin film solar cells are reviewed. The evolution, structures, fabrication methods, stability and degradation methods, and trend in the efficiency of the thin-film solar cells over the years are discussed in detail. Also, a comparison of the thin-film solar cells reviewed with crystalline silicon in terms of physical properties and performance is made.

Keywords: Climate change, conversion efficiency, solar energy, thin-film solar cell.

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Authors: Jae-Hong Kwon, Myung-Ho Chung, Tae-Yeon Oh, Hyeon-Seok Bae, Byeong-Kwon Ju

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End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

Keywords: Organic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

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Authors: S. Kowsari, M. Aghaziarati

Abstract:

Pyrite (FeS2) is a promising candidate for cathode materials in batteries because of it`s high theoretical capacity, low cost and non-toxicity. In this study, nano size iron disulfide thin film was prepared on graphite substrate through a new method as battery cathode. In this way, acetylene black and poly vinylidene fluoride were used as electron conductor and binder, respectively. Fabricated thin films were analyzed by XRD and SEM. These results and electrochemical data confirm improvement of battery discharge capacity in comparison with commercial type of pyrite.

Keywords: Nano pyrite, Thin film, Battery cathode, capacity.

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Authors: Won Song, Bo-Ra Koo, Seok Eui Choi, Yong-Taeg Oh, Dong-Chan Shin

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Optical properties of sputter-deposited ZnS thin films were investigated as potential replacements for CBD(chemical bath deposition) CdS buffer layers in the application of CIGS solar cells. ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC, and 250oC with 50 sccm Ar gas using an RF magnetron sputtering system. The crystal structure of the thin film is found to be zinc blende (cubic) structure. Lattice parameter of ZnS is slightly larger than CdS on the plane and thus better matched with that of CIGS. Within a 400-800 nm wavelength region, the average transmittance was larger than 75%. When the deposition temperature of the thin film was increased, the blue shift phenomenon was enhanced. Band gap energy of the ZnS thin film tended to increase as the deposition temperature increased. ZnS thin film is a promising material system for the CIGS buffer layer, in terms of ease of processing, low cost, environmental friendliness, higher transparency, and electrical properties

Keywords: ZnS thin film, Buffer layer, CIGS, Solar cell.

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Authors: Jihyun Park, Tae Il Lee, Jae-Min Myoung

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A Silver (Ag) thin film is introduced as a template and doping source for vertically aligned p–type ZnO nanorods. ZnO nanorods were grown using an ammonium hydroxide based hydrothermal process. During the hydrothermal process, the Ag thin film was dissolved to generate Ag ions in the solution. The Ag ions can contribute to doping in the wurzite structure of ZnO and the (111) grain of Ag thin film can be the epitaxial temporal template for the (0001) plane of ZnO. Hence, Ag–doped p–type ZnO nanorods were successfully grown on the substrate, which can be an electrode or semiconductor for the device application. To demonstrate the potentials of this idea, p–n diode was fabricated and its electrical characteristics were demonstrated.

Keywords: Ag–doped ZnO nanorods, Hydrothermal process, p–n homo–junction diode, p–type ZnO.

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Authors: Hla Hla Khaing, Yit Jian Liang, Nant Nyein Moe Htay, Jiang Fan

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Partial shadowing is one of the problems that are always faced in terrestrial applications of solar photovoltaic (PV). The effects of partial shadow on the energy yield of conventional mono-crystalline and multi-crystalline PV modules have been researched for a long time. With deployment of new thin-film solar PV modules in the market, it is important to understand the performance of new PV modules operating under the partial shadow in the tropical zone. This paper addresses the impacts of different partial shadowing on the operating characteristics of four different types of solar PV modules that include multi-crystalline, amorphous thin-film, CdTe thin-film and CIGS thin-film PV modules.

Keywords: Partial shade, CdTe, CIGS, multi-crystalline (mc-Si), amorphous silicon (a-Si), bypass diode.

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Authors: S. R. Kumar, Shashikant Rajpal

Abstract:

A nanocrystalline thin film of ZnSe was successfully electrodeposited on copper substrate using a non-aqueous solution and subsequently annealed in air at 400°C. XRD analysis indicates the polycrystalline deposit of (111) plane in both the cases. The sharpness of the peak increases due to annealing of the film and average grain size increases to 20 nm to 27nm. SEM photograph indicate that grains are uniform and densely distributed over the surface. Annealing increases the average grain size by 20%. The EDS spectroscopy shows the ratio of Zn & Se is 1.1 in case of annealed film. AFM analysis indicates the average roughness of the film reduces from 181nm to 165nm due to annealing of the film. The bandgap also decreases from 2.71eV to 2.62eV.

Keywords: Electrodeposition, Non-aqueous medium, SEM, XRD.

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Authors: N. Dahbi, D-E. Arafah

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Cd_1−xZn_xS thins films have been fabricated from ZnS/CdS/ZnS multilayer thin film systems, by using the vacuum deposition method; the Rutherford backscattering (RBS) technique have been applied in order to determine the: structure, composition, depth profile, and stoichiometric of these films. The influence of the chemical and heat treatments on the produced films also have been investigated; the RBS spectra of the films showed that homogenous Cd_1−xZn_xS can be synthesized with x=0.45.

Keywords: Cd1−xZnxS, chemical treatment, depth profile, heat treatment, RBS, RUMP simulation, thin film, vacuum deposition, ZnS/CdS/ZnS.

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Authors: Ravinu Garg, Naresh V. Datla

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We study the fracture mechanics of peeling of thin films perfectly bonded to a rigid substrate of any random surface topology using an analytical formulation. A generalized theoretical model has been developed to determine the peel strength of thin elastic films. It is demonstrated that an improvement in the peel strength can be achieved by modifying the surface characteristics of the rigid substrate. Characterization study has been performed to analyze the effect of different parameters on effective peel force from the rigid surface. Different surface profiles such as circular and sinusoidal has been considered to demonstrate the bonding characteristics of film-substrate interface. Condition for the instability in the debonding of the film is analyzed, where the localized self-debonding arises depending upon the film and surface characteristics. This study is towards improved adhesion strength of thin films to rigid substrate using different textured surfaces.

Keywords: Debonding, fracture mechanics, surface topology, thin film adhesion.

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Authors: Saleh H. Abud, Z. Hassan, F. K. Yam

Abstract:

Characteristics of MSM photodetector based on a porous In_0.08Ga_0.92N thin film were reported. Nanoporous structures of n-type In_0.08Ga_0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C₂H₅OH solution for 15min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.

Keywords: Porous InGaN, photoluminescence, SMS photodetector.

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Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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Authors: Su Jeong Lee, Tae Il Lee, Jung Han Kim, Chul-Hong Kim, Gee Sung Chae, Jae-Min Myoung

Abstract:

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (In2O3) sol gel thin film. By inserting low work function AZO NPs into the interface between the SWCNTs and the In2O3 which has a high energy barrier, we could obtain an electrical Ohmic contact between them. Finally, with the SWCNT-AZO NP bilayer electrodes, we successfully fabricated a TFT showing a field effect mobility of 5.38 cm2/V·s at 250°C.

Keywords: Single-walled carbon nanotube (SWCNT), Al-doped ZnO (AZO) nanoparticle, contact resistance, Thin-film transistor (TFT).

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Authors: Cheng-Ying Lo

Abstract:

This paper adopted the hybrid differential transform approach for studying heat transfer problems in a gold/chromium thin film with an ultra-short-pulsed laser beam projecting on the gold side. The physical system, formulated based on the hyperbolic two-step heat transfer model, covers three characteristics: (i) coupling effects between the electron/lattice systems, (ii) thermal wave propagation in metals, and (iii) radiation effects along the interface. The differential transform method is used to transfer the governing equations in the time domain into the spectrum equations, which is further discretized in the space domain by the finite difference method. The results, obtained through a recursive process, show that the electron temperature in the gold film can rise up to several thousand degrees before its electron/lattice systems reach equilibrium at only several hundred degrees. The electron and lattice temperatures in the chromium film are much lower than those in the gold film.

Keywords: Differential transform, hyperbolic heat transfer, thin film, ultrashort-pulsed laser.

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Authors: Nurul Amziah Md Yunus, Izhal Abdul Halin, Nasri Sulaiman, Noor Faezah Ismail, Nik Hasniza Nik Aman

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Nanotechnology has become the world attention in various applications including the solar cells devices due to the uniqueness and benefits of achieving low cost and better performances of devices. Recently, thin film solar cells such as Cadmium Telluride (CdTe), Copper-Indium-Gallium-diSelenide (CIGS), Copper-Zinc-Tin-Sulphide (CZTS), and Dye-Sensitized Solar Cells (DSSC) enhanced by nanotechnology have attracted much attention. Thus, a compilation of nanotechnology devices giving the progress in the solar cells has been presented. It is much related to nanoparticles or nanocrystallines, carbon nanotubes, and nanowires or nanorods structures.

Keywords: Nanotechnology, nanocrystalline, nanowires, carbon nanotubes, nanorods, thin film solar cells.

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Authors: Jaibir Sharma, Lee JaeWung, Merugu Srinivas, Navab Singh

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This paper presents thermal annealing de-wetting technique for the preparation of porous metal membrane for Thin Film Encapsulation (TFE) application. Thermal annealing de-wetting experimental results reveal that pore size formation in porous metal membrane depend upon i.e. 1. The substrate at which metal is deposited, 2. Melting point of metal used for porous metal cap layer membrane formation, 3. Thickness of metal used for cap layer, 4. Temperature used for formation of porous metal membrane. In order to demonstrate this technique, Silver (Ag) was used as a metal for preparation of porous metal membrane on amorphous silicon (a-Si) and silicon oxide. The annealing of the silver thin film of various thicknesses was performed at different temperature. Pores in porous silver film were analyzed using Scanning Electron Microscope (SEM). In order to check the usefulness of porous metal film for TFE application, the porous silver film prepared on amorphous silicon (a- Si) and silicon oxide was released using XeF2 and VHF, respectively. Finally, guide line and structures are suggested to use this porous membrane for robust TFE application.

Keywords: De-wetting, thermal annealing, metal, melting point, porous.

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Authors: Vipin Kumar Jain, Praveen Kumar, Y.K. Vijay

Abstract:

ZnO-SnO2 i.e. Zinc-Tin-Oxide (ZTO) thin films were deposited on glass substrate with varying concentrations (ZnO:SnO2 - 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZTO film were annealed at 450 0C in vacuum. These films were characterized to study the effect of annealing on the structural, electrical, and optical properties. Atomic force microscopy (AFM) and Scanning electron microscopy (SEM) images manifest the surface morphology of these ZTO thin films. The apparent growth of surface features revealed the formation of nanostructure ZTO thin films. The small value of surface roughness (root mean square RRMS) ensures the usefulness in optical coatings. The sheet resistance was also found to be decreased for both types of films with increasing concentration of SnO2. The optical transmittance found to be decreased however blue shift has been observed after annealing.

Keywords: ZTO thin film, AFM, SEM, Optical transmittance, Sheet resistance.

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Authors: Hung-Wei Wu, Chien-Hsun Chu, Ru-Yuan Yang, Chin-Min Hsiung

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In this paper, we proposed the effects of Mo thickness on the properties of AZO/Mo/AZO multilayer thin films for opto-electronics applications. The structural, optical and electrical properties of AZO/Mo/AZO thin films were investigated. Optimization of the thin films coatings resulted with low resistivity of 9.98 × 10-5 )-cm, mobility of 12.75 cm2/V-s, carrier concentration of 1.05 × 1022 cm-3, maximum transmittance of 79.13% over visible spectrum of 380 – 780 nm and Haacke figure of merit (FOM) are 5.95 × 10-2 )-1 under Mo layer thickness of 15 nm. These results indicate an alternative candidate for use as a transparent electrode in solar cells and various displays applications.

Keywords: Aluminum-doped zinc oxide, AZO, multilayer, RF magnetron sputtering, AZO/Mo/AZO, thin film, transparent conductive oxides.

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Authors: Jian-Jun Shu

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A cold, thin film of liquid impinging on an isothermal hot, horizontal surface has been investigated. An approximate solution for the velocity and temperature distributions in the flow along the horizontal surface is developed, which exploits the hydrodynamic similarity solution for thin film flow. The approximate solution may provide a valuable basis for assessing flow and heat transfer in more complex settings.

Keywords: Flux, free impinging jet, solid-surface, uniform wall temperature.

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Authors: Mohammad Reza Tabatabaei, Ali Vaseghi Ardekani

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In this paper, Zinc Oxide (ZnO) thin films are deposited on glass substrate by sol-gel method. The ZnO thin films with well defined orientation were acquired by spin coating of zinc acetate dehydrate monoethanolamine (MEA), de-ionized water and isopropanol alcohol. These films were pre-heated at 275°C for 10 min and then annealed at 350°C, 450°C and 550°C for 80 min. The effect of annealing temperature and different thickness on structure and surface morphology of the thin films were verified by Atomic Force Microscopy (AFM). It was found that there was a significant effect of annealing temperature on the structural parameters of the films such as roughness exponent, fractal dimension and interface width. Thin films also were characterizied by X-ray Diffractometery (XRD) method. XRD analysis revealed that the annealed ZnO thin films consist of single phase ZnO with wurtzite structure and show the c-axis grain orientation. Increasing annealing temperature increased the crystallite size and the c-axis orientation of the film after 450°C. Also In this study, ZnO thin films in different thickness have been prepared by sol-gel method on the glass substrate at room temperature. The thicknesses of films are 100, 150 and 250 nm. Using fractal analysis, morphological characteristics of surface films thickness in amorphous state were investigated. The results show that with increasing thickness, surface roughness (RMS) and lateral correlation length (ξ) are decreased. Also, the roughness exponent (α) and growth exponent (β) were determined to be 0.74±0.02 and 0.11±0.02, respectively.

Keywords: ZnO, Thin film, Fractal analysis, Morphology, AFM, annealing temperature, different thickness, XRD.

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Authors: Kandpal M. , Gundampati R. K , Debnath M.

Abstract:

Microbial contamination, most of which are fecal born in drinking water and food industry is a serious threat to humans. Escherichia coli is one of the most common and prevalent among them. We have developed a sensor for rapid and an early detection of contaminants, taking E.coli as a threat indicator organism. The sensor is based on co-polymerizations of aniline and formaldehyde in form of thin film over glass surface using the vacuum deposition technique. The particular doping combination of thin film with Fe-Al and Fe-Cu in different concentrations changes its non conducting properties to p- type semi conductor. This property is exploited to detect the different contaminants, believed to have the different surface charge. It was found through experiments that different microbes at same OD (0.600 at 600 nm) have different conductivity in solution. Also the doping concentration is found to be specific for attracting microbes on the basis of surface charge. This is a simple, cost effective and quick detection method which not only decreases the measurement time but also gives early warnings for highly contaminated samples.

Keywords: Sensor, Vacuum deposition technique, thin film, E.coli detection, doping concentration.

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Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

Keywords: Infrared detector, Schottky-barrier, Silicon waveguide, Silicon photonics

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Authors: A. U. Moreh, M. Momoh, H. N. Yahya, B. Hamza, I. G. Saidu, S. Abdullahi

Abstract:

This work studies the effect of thickness on structural and electrical properties of CuAlS2 thin films grown by two stage vacuum thermal evaporation technique. CuAlS2 thin films of thicknesses 50nm, 100nm and 200nm were deposited on suitably cleaned corning 7059 glass substrate at room temperature (RT). In the first stage Cu-Al precursors were grown at room temperature by thermal evaporation and in the second stage Cu-Al precursors were converted to CuAlS2 thin films by sulfurisation under sulfur atmosphere at the temperature of 673K. The structural properties of the films were examined by X-ray diffraction (XRD) technique while electrical properties of the specimens were studied using four point probe method. The XRD studies revealed that the films are of crystalline in nature having tetragonal structure. The variations of the micro-structural parameters, such as crystallite size (D), dislocation density ( ), and micro-strain ( ), with film thickness were investigated. The results showed that the crystallite sizes increase as the thickness of the film increases. The dislocation density and micro-strain decreases as the thickness increases. The resistivity (  ) of CuAlS2 film is found to decrease with increase in film thickness, which is related to the increase of carrier concentration with film thickness. Thus thicker films exhibit the lowest resistivity and high carrier concentration, implying these are the most conductive films. Low electrical resistivity and high carrier concentration are widely used as the essential components in various optoelectronic devices such as light-emitting diode and photovoltaic cells.

Keywords: Crystalline, CuAlS2, evaporation, resistivity, sulfurisation, thickness.

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Authors: Shuvro Chowdhury, Esmat Farzana, Rizvi Ahmed, A. T. M. Golam Sarwar, M. Ziaur Rahman Khan

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The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

Keywords: C-V characteristics, Self-Consistent Analysis, Siliconon-Insulator, Ultra-thin film.

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Authors: A. Bahrampour, A. Iadicicco, G. De Luca, M. Giordano, A. Cutolo, L. Monsù Scolaro, A. Cusano

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In this work we report on preliminary analysis of a novel optoelectronic gas sensor based on an optical fiber integrated with a tetrakis(4-sulfonatophenyl)porphyrin (TPPS) thin film. The sensitive materials are selectively deposited on the core region of a fiber tip by UV light induced deposition technique. A simple and cheap process which can be easily extended to different porphyrin derivatives. When the TPPS film on the fiber tip is exposed to acid and/or base vapors, dramatic changes occur in the aggregation structure of the dye molecules in the film, from J- to H-type, resulting in a profound modification of their corresponding reflectance spectra. From the achieved experimental results it is evident that the presence of intense and narrow band peaks in the reflected spectra could be monitored to detect hazardous vapors.

Keywords: Optical fiber sensor, Porphyrins, Thin films UV induced deposition, TPPS.

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Authors: Hsin-Ping Huang, Shyankay Jou

Abstract:

Resistive switching of aluminum nitride (AlN_x) thin film was demonstrated in a TaN/AlN_x/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), R_HRS/R_LRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlN_x/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlN_x film.

Keywords: Aluminum nitride, nonvolatile memory, resistive switching, thin films.

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Authors: F. Djaafar, B. Hadri, G. Bachir

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This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction.

Keywords: Heterojunction, modeling, simulation, thin film, Tcad Silvaco.

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Authors: N. H. Arabi, Aicha Iratni, Talaighil Razika, Bruno Capoen, Mohamed Bouazaoui

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TiO2 thin films have been prepared by the sol-gel dipcoating technique in order to elaborate antireflective thin films for monocrystalline silicon (mono-Si). The titanium isopropoxyde was chosen as a precursor with hydrochloric acid as a catalyser for preparing a stable solution. The optical properties have been tailored with varying the solution concentration, the withdrawn speed, and the heat-treatment. We showed that using a TiO2 single layer with 64.5 nm in thickness, heat-treated at 450°C or 300°C reduces the mono-Si reflection at a level lower than 3% over the broadband spectral domains [669-834] nm and [786-1006] nm respectively. Those latter performances are similar to the ones obtained with double layers of low and high refractive index glasses respectively.

Keywords: Dip coating, mono-Si, titanium oxide, thin film.

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Authors: S.Solaymani, T.Ghodselahi, N.B.Nezafat, H.Zahrabi, A.Gelali

Abstract:

The morphological parameter of a thin film surface can be characterized by power spectral density (PSD) functions which provides a better description to the topography than the RMS roughness and imparts several useful information of the surface including fractal and superstructure contributions. Through the present study Nanoparticle copper/carbon composite films were prepared by co-deposition of RF-Sputtering and RF-PECVD method from acetylene gas and copper target. Surface morphology of thin films is characterized by using atomic force microscopy (AFM). The Carbon content of our films was obtained by Rutherford Back Scattering (RBS) and it varied from .4% to 78%. The power values of power spectral density (PSD) for the AFM data were determined by the fast Fourier transform (FFT) algorithms. We investigate the effect of carbon on the roughness of thin films surface. Using such information, roughness contributions of the surface have been successfully extracted.

Keywords: Atomic force microscopy, Fast Fourier transform, Power spectral density, RBS.

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