@article{(Open Science Index):https://publications.waset.org/pdf/10000425,
	  title     = {Transparent and Solution Processable Low Contact Resistance SWCNT/AZONP Bilayer Electrodes for Sol-Gel Metal Oxide Thin Film Transistor},
	  author    = {Su Jeong Lee and  Tae Il Lee and  Jung Han Kim and  Chul-Hong Kim and  Gee Sung Chae and  Jae-Min Myoung},
	  country	= {},
	  institution	= {},
	  abstract     = {The contact resistance between source/drain electrodes
and semiconductor layer is an important parameter affecting electron
transporting performance in the thin film transistor (TFT). In this
work, we introduced a transparent and the solution prossable
single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle
(AZO NP) bilayer electrodes showing low contact resistance with
indium-oxide (In2O3) sol gel thin film. By inserting low work function
AZO NPs into the interface between the SWCNTs and the In2O3 which
has a high energy barrier, we could obtain an electrical Ohmic contact
between them. Finally, with the SWCNT-AZO NP bilayer electrodes,
we successfully fabricated a TFT showing a field effect mobility of
5.38 cm2/V·s at 250°C.
},
	    journal   = {International Journal of Materials and Metallurgical Engineering},
	  volume    = {9},
	  number    = {1},
	  year      = {2015},
	  pages     = {118 - 121},
	  ee        = {https://publications.waset.org/pdf/10000425},
	  url   	= {https://publications.waset.org/vol/97},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 97, 2015},
	}