Search results for: bypass diode.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 126

Search results for: bypass diode.

126 Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel

Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: CdO, heterojunction semiconductor devices, ideality factor, current-voltage characteristics

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125 Effect of Modeling of Hydraulic Form Loss Coefficient to Break on Emergency Core Coolant Bypass

Authors: Young S. Bang, Dong H. Yoon, Seung H. Yoo

Abstract:

Emergency Core Coolant Bypass (ECC Bypass) has been regarded as an important phenomenon to peak cladding temperature of large-break loss-of-coolant-accidents (LBLOCA) in nuclear power plants (NPP). A modeling scheme to address the ECC Bypass phenomena and the calculation of LBLOCA using that scheme are discussed in the present paper. A hydraulic form loss coefficient (HFLC) from the reactor vessel downcomer to the broken cold leg is predicted by the computational fluid dynamics (CFD) code with a variation of the void fraction incoming from the downcomer. The maximum, mean, and minimum values of FLC are derived from the CFD results and are incorporated into the LBLOCA calculation using a system thermal-hydraulic code, MARS-KS. As a relevant parameter addressing the ECC Bypass phenomena, the FLC to the break and its range are proposed.

Keywords: CFD analysis, ECC Bypass, hydraulic form loss coefficient, system thermal-hydraulic code.

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124 The Effect of the Thermal Temperature and Injected Current on Laser Diode 808 nm Output Power

Authors: Hassan H. Abuelhassan, M. Ali Badawi, Abdelrahman A. Elbadawi, Adam A. Elbashir

Abstract:

In this paper, the effect of the injected current and temperature into the output power of the laser diode module operating at 808nm were applied, studied and discussed. Low power diode laser was employed as a source. The experimental results were demonstrated and then the output power of laser diode module operating at 808nm was clearly changed by the thermal temperature and injected current. The output power increases by the increasing the injected current and temperature. We also showed that the increasing of the injected current results rising in heat, which also, results into decreasing of the laser diode output power during the highest temperature as well. The best ranges of characteristics made by diode module operating at 808nm were carefully handled and determined.

Keywords: Laser diode, light amplification, injected current, output power.

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123 Frequency Reconfigurable Multiband Patch Antenna Using PIN-Diode for ITS Applications

Authors: Gaurav Upadhyay, Nand Kishore, Prashant Ranjan, V. S. Tripathi, Shivesh Tripathi

Abstract:

A frequency reconfigurable multiband antenna for intelligent transportation system (ITS) applications is proposed in this paper. A PIN-diode is used for reconfigurability. Centre frequencies are 1.38, 1.98, 2.89, 3.86, and 4.34 GHz in “ON” state of Diode and 1.56, 2.16, 2.88, 3.91 and 4.45 GHz in “OFF” state. Achieved maximum bandwidth is 18%. The maximum gain of the proposed antenna is 2.7 dBi in “ON” state and 3.95 dBi in “OFF” state of the diode. The antenna is simulated, fabricated, and tested in the lab. Measured and simulated results are in good confirmation.

Keywords: ITS, multiband antenna, PIN-diode, reconfigurable.

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122 Experimental Parametric Investigation of Temperature Effects on 60W-QCW Diode Laser

Authors: E. Farsad, S. P. Abbasi, A. Goodarzi, M. S. Zabihi

Abstract:

Nowadays, quasi-continuous wave diode lasers are used in a widespread variety of applications. Temperature effects in these lasers can strongly influence their performance. In this paper, the effects of temperature have been experimentally investigated on different features of a 60W-QCW diode laser. The obtained results indicate that the conversion efficiency and operation voltage of diode laser decrease with the augmentation of the working temperature associated with a redshift in the laser peak wavelength. Experimental results show the emission peak wavelength of laser shifts 0.26 nm and the conversion efficiency decreases 1.76 % with the increase of temperature from 40 to 50 ̊C. Present study also shows the slope efficiency decreases gradually at low temperatures and rapidly at higher temperatures. Regarding the close dependence of the mentioned parameters to the operating temperature, it is of great importance to carefully control the working temperature of diode laser, particularly for medical applications.

Keywords: diode laser, experimentally, temperature, wavelength

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121 Fluctuations of Transfer Factor of the Mixer Based on Schottky Diode

Authors: Alexey V. Klyuev, Arkady V. Yakimov, Mikhail I. Ryzhkin, Andrey V. Klyuev

Abstract:

Fluctuations of Schottky diode parameters in a structure of the mixer are investigated. These fluctuations are manifested in two ways. At the first, they lead to fluctuations in the transfer factor that is lead to the amplitude fluctuations in the signal of intermediate frequency. On the basis of the measurement data of 1/f noise of the diode at forward current, the estimation of a spectrum of relative fluctuations in transfer factor of the mixer is executed. Current dependence of the spectrum of relative fluctuations in transfer factor of the mixer and dependence of the spectrum of relative fluctuations in transfer factor of the mixer on the amplitude of the heterodyne signal are investigated. At the second, fluctuations in parameters of the diode lead to occurrence of 1/f noise in the output signal of the mixer. This noise limits the sensitivity of the mixer to the value of received signal.

Keywords: Current-voltage characteristic, fluctuations, mixer, Schottky diode, 1/f noise.

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120 Design of Reconfigurable 2 Way Wilkinson Power Divider for WLAN Applications

Authors: G. Kalpanadevi, S. Ravimaran, M. Shanmugapriya

Abstract:

A Reconfigurable Wilkinson power divider is proposed in this paper. In existing system only a limited number of bandwidth is used at the output ports, in the proposed Wilkinson power divider different band of frequencies are obtained by using PIN diode. By tuning the PIN diode, different frequencies are achieved. The size of the power divider is reduced for the operating frequency and increases the fractional bandwidth.

Keywords: Isolation loss, PIN diode, Reconfigurable Wilkinson power divider and WLAN applications.

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119 Measurement of I-V Characteristics of a PtSi/p-Si Schottky Barrier Diode at low Temperatures

Authors: Somayeh Gholami, Meysam Khakbaz

Abstract:

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.

Keywords: Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.

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118 Powerful Laser Diode Matrixes for Active Vision Systems

Authors: Dzmitry M. Kabanau, Vladimir V. Kabanov, Yahor V. Lebiadok, Denis V. Shabrov, Pavel V. Shpak, Gevork T. Mikaelyan, Alexandr P. Bunichev

Abstract:

This article is deal with the experimental investigations of the laser diode matrixes (LDM) based on the AlGaAs/GaAs heterostructures (lasing wavelength 790-880 nm) to find optimal LDM parameters for active vision systems. In particular, the dependence of LDM radiation pulse power on the pulse duration and LDA active layer heating as well as the LDM radiation divergence are discussed.

Keywords: Active vision systems, laser diode matrixes, thermal properties, radiation divergence.

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117 Parametric Investigation of Diode and CO2 Laser in Direct Metal Deposition of H13 Tool Steel on Copper Substrate

Authors: M. Khalid Imran, Syed Masood, Milan Brandt, Sudip Bhattacharya, Jyotirmoy Mazumder

Abstract:

In the present investigation, H13 tool steel has been deposited on copper alloy substrate using both CO2 and diode laser. A detailed parametric analysis has been carried out in order to find out optimum processing zone for coating defect free H13 tool steel on copper alloy substrate. Followed by parametric optimization, the microstructure and microhardness of the deposited clads have been evaluated. SEM micrographs revealed dendritic microstructure in both clads. However, the microhardness of CO2 laser deposited clad was much higher compared to diode laser deposited clad.

Keywords: CO2 laser, Diode laser, Direct Metal Deposition, Microstructure, Microhardness, Porosity.

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116 Fabrication and Characterization of Al/Methyl Orange/n-Si Heterojunction Diode

Authors: Muhammad Tahir, Muhammad H. Sayyad, Dil N. Khan, Fazal Wahab

Abstract:

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior that confirms the formation of diode. The diode parameters such as rectification ratio (RR), turn on voltage (Vturn on), reverse saturation current (I0), ideality factor (n), barrier height ( b f ), series resistance (Rs) and shunt resistance (Rsh) are determined from I-V curves using Schottky equations. These values of these parameters are also extracted and verified by applying Cheung’s functions. The conduction mechanisms are explained from the forward bias I-V characteristics using the power law.

Keywords: Electrical properties, Organic/inorganic heterojunction diode, Methyl Orange, Cheungs Functions

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115 The Role Played by Swift Change of the Stability Characteristic of Mean Flow in Bypass Transition

Authors: Dong Ming, Su Caihong

Abstract:

The scenario of bypass transition is generally described as follows: the low-frequency disturbances in the free-stream may generate long stream-wise streaks in the boundary layer, which later may trigger secondary instability, leading to rapid increase of high-frequency disturbances. Then possibly turbulent spots emerge, and through their merging, lead to fully developed turbulence. This description, however, is insufficient in the sense that it does not provide the inherent mechanism of transition that during the transition, a large number of waves with different frequencies and wave numbers appear almost simultaneously, producing sufficiently large Reynolds stress, so the mean flow profile can change rapidly from laminar to turbulent. In this paper, such a mechanism will be figured out from analyzing DNS data of transition.

Keywords: boundary layer, breakdown, bypass transition, stability, streak.

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114 A Comparative Study of PV Models in Matlab/Simulink

Authors: Mohammad Seifi, Azura Bt. Che Soh, Noor Izzrib. Abd. Wahab, Mohd Khair B. Hassan

Abstract:

Solar energy has a major role in renewable energy resources. Solar Cell as a basement of solar system has attracted lots of research. To conduct a study about solar energy system, an authenticated model is required. Diode base PV models are widely used by researchers. These models are classified based on the number of diodes used in them. Single and two-diode models are well studied. Single-diode models may have two, three or four elements. In this study, these solar cell models are examined and the simulation results are compared to each other. All PV models are re-designed in the Matlab/Simulink software and they examined by certain test conditions and parameters. This paper provides comparative studies of these models and it tries to compare the simulation results with manufacturer-s data sheet to investigate model validity and accuracy. The results show a four- element single-diode model is accurate and has moderate complexity in contrast to the two-diode model with higher complexity and accuracy

Keywords: Fill Factor (FF), Matlab/Simulink, Maximum PowerPoint (MPP), Maximum Power Point Tracker (MPPT), Photo Voltaic(PV), Solar cell, Standard Test Condition (STC).

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113 Investigation of the Electronic Properties of Au/methyl-red/Ag Surface type Schottky Diode by Current-Voltage Method

Authors: Zubair Ahmad, Muhammad Hassan Sayyad

Abstract:

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by using the Cheung functions. From semi-log current-voltage characteristics the values of n and b were found 1.93 and 0.254 eV, respectively, while by using Cheung functions their values were calculated 1.89 and 0.26 eV, respectively. The effect of series resistance was also analyzed by Cheung functions. The series resistance RS values were determined from dV/d(lnI)–I and H(I)–I graphs and were found to be 1.1 k and 1.3 k, respectively.

Keywords: Surface type Schottky diodes, Methyl-red, Currentvoltage method

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112 Simulation of a Boost PFC Converter with Electro Magnetic Interference Filter

Authors: P. Ram Mohan, M. Vijaya Kumar, O. V. Raghava Reddy

Abstract:

This paper deals with the simulation of a Boost Power Factor Correction (PFC) Converter with Electro Magnetic Interference (EMI) Filter. The diode rectifier with output capacitor gives poor power factor. The Boost Converter of PFC Circuit is analyzed and then simulated with diode rectifier. The Boost PFC Converter with EMI Filter is simulated for resistive load. The power factor is improved using the proposed converter.

Keywords: Boost Converter, Power Factor Correction, Electro Magnetic Interference, Diode Rectifier

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111 Temperature Control of Industrial Water Cooler using Hot-gas Bypass

Authors: Jung-in Yoon, Seung-taek Oh, Seung-moon Baek, Jun-hyuk Choi, Jong-yeong Byun, Seok-kwon Jeong, Choon-guen Moon

Abstract:

In this study, we experiment on precise control outlet temperature of water from the water cooler with hot-gas bypass method based on PI control logic for machine tool. Recently, technical trend for machine tools is focused on enhancement of speed and accuracy. High speedy processing causes thermal and structural deformation of objects from the machine tools. Water cooler has to be applied to machine tools to reduce the thermal negative influence with accurate temperature controlling system. The goal of this study is to minimize temperature error in steady state. In addition, control period of an electronic expansion valve were considered to increment of lifetime of the machine tools and quality of product with a water cooler.

Keywords: Hot-gas bypass, Water cooler, PI control, Electronic Expansion Valve, Gain tuning

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110 Optimization of Diverter Box Configuration in a V94.2 Gas Turbine Exhaust System using Numerical Simulation

Authors: A. Mohajer, A. Noroozi, S. Norouzi

Abstract:

The bypass exhaust system of a 160 MW combined cycle has been modeled and analyzed using numerical simulation in 2D prospective. Analysis was carried out using the commercial numerical simulation software, FLUENT 6.2. All inputs were based on the technical data gathered from working conditions of a Siemens V94.2 gas turbine, installed in the Yazd power plant. This paper deals with reduction of pressure drop in bypass exhaust system using turning vanes mounted in diverter box in order to alleviate turbulent energy dissipation rate above diverter box. The geometry of such turning vanes has been optimized based on the flow pattern at diverter box inlet. The results show that the use of optimized turning vanes in diverter box can improve the flow pattern and eliminate vortices around sharp edges just before the silencer. Furthermore, this optimization could decrease the pressure drop in bypass exhaust system and leads to higher plant efficiency.

Keywords: Numerical simulation, Diverter box, Turning vanes, Exhaust system

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109 Compact Tunable 10 W picosecond Sourcebased on Yb-doped Fiber Amplification of Gain Switch Laser Diode

Authors: Hongjun Liu, Cunxiao Gao, Jintao Tao, Wei Zhao, Yishan Wang

Abstract:

A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses with high stability and excellent beam quality (M2<1.2) of 10 W average power 150 ps pulse duration at 1 MHz repetition rate were obtained. The central wavelength with the line width of 2.5-3 nm was tunable from 1053 nm to 1073 nm.

Keywords: Fiber laser, fiber amplifier, picosecond laser, highpower laser

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108 Characteristics of Different Solar PV Modules under Partial Shading

Authors: Hla Hla Khaing, Yit Jian Liang, Nant Nyein Moe Htay, Jiang Fan

Abstract:

Partial shadowing is one of the problems that are always faced in terrestrial applications of solar photovoltaic (PV). The effects of partial shadow on the energy yield of conventional mono-crystalline and multi-crystalline PV modules have been researched for a long time. With deployment of new thin-film solar PV modules in the market, it is important to understand the performance of new PV modules operating under the partial shadow in the tropical zone. This paper addresses the impacts of different partial shadowing on the operating characteristics of four different types of solar PV modules that include multi-crystalline, amorphous thin-film, CdTe thin-film and CIGS thin-film PV modules.

Keywords: Partial shade, CdTe, CIGS, multi-crystalline (mc-Si), amorphous silicon (a-Si), bypass diode.

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107 Analysis of Partially Shaded PV Modules Using Piecewise Linear Parallel Branches Model

Authors: Yaw-Juen Wang, Po-Chun Hsu

Abstract:

This paper presents an equivalent circuit model based on piecewise linear parallel branches (PLPB) to study solar cell modules which are partially shaded. The PLPB model can easily be used in circuit simulation software such as the ElectroMagnetic Transients Program (EMTP). This PLPB model allows the user to simulate several different configurations of solar cells, the influence of partial shadowing on a single or multiple cells, the influence of the number of solar cells protected by a bypass diode and the effect of the cell connection configuration on partial shadowing.

Keywords: Cell Connection Configurations, EMTP, Equivalent Circuit, Partial Shading, Photovoltaic Module

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106 Ambipolar Effect Free Double Gate PN Diode Based Tunnel FET

Authors: Hardik Vaghela, Mamta Khosla, Balwindar Raj

Abstract:

In this paper, we present and investigate a double gate PN diode based tunnel field effect transistor (DGPNTFET). The importance of proposed structure is that the formation of different drain doping is not required and ambipolar effect in OFF state is completely removed for this structure. Validation of this structure to behave like a Tunnel Field Effect Transistor (TFET) is carried out through energy band diagrams and transfer characteristics. Simulated result shows point subthreshold slope (SS) of 19.14 mV/decade and ON to OFF current ratio (ION / IOFF) of 2.66 × 1014 (ION at VGS=1.5V, VDS=1V and IOFF at VGS=0V, VDS=1V) for gate length of 20nm and HfO2 as gate oxide at room temperature. Which indicate that the DGPNTFET is a promising candidate for nano-scale, ambipolar free switch.

Keywords: Ambipolar effect, double gate PN diode based tunnel field effect transistor, high-κ dielectric material, subthreshold slope, tunnel field effect transistor.

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105 Characteristics and Mechanical Properties of Bypass-Current MIG Welding-Brazed Dissimilar Al/Ti Joints

Authors: Bintao Wu, Xiangfang Xu, Yugang Miao, Duanfeng Han

Abstract:

Joining of 1mm thick aluminum 6061 to titanium TC4 was conducted using Bypass-current MIG welding-brazed, and stable welding process and good bead appearance were obtained. The Joint profile and microstructure of Ti/Al joints were observed by optical microscopy and SEM and then the structure of the interfacial reaction layers were analyzed in details. It was found that the intermetallic compound layer at the interfacial top is in the form of columnar crystal, which is in short and dense state. A mount of AlTi were observed at the interfacial layer near the Ti base metal while intermetallic compound like Al3Ti, TiSi3 were formed near the Al base metal, and the Al11Ti5 transition phase was found in the center of the interface layer due to the uneven distribution inside the weld pool during the welding process. Tensile test results show that the average tensile strength of joints is up to 182.6 MPa, which reaches about 97.6% of aluminum base metal. Fracture is prone to occur in the base metal with a certain amount of necking.

Keywords: Bypass-current MIG welding-brazed, Al alloy, Ti alloy, joint characteristics, mechanical properties.

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104 Advanced Pulse Width Modulation Techniques for Z Source Multi Level Inverter

Authors: B. M. Manjunatha, D. V. Ashok Kumar, M. Vijay Kumar

Abstract:

This paper proposes five level diode clamped Z source Inverter. The existing PWM techniques used for ZSI are restricted for two level. The two level Z Source Inverter have high harmonic distortions which effects the performance of the grid connected PV system. To improve the performance of the system the number of voltage levels in the output waveform need to be increased. This paper presents comparative analysis of a five level diode clamped Z source Inverter with different carrier based Modified Pulse Width Modulation techniques. The parameters considered for comparison are output voltage, voltage gain, voltage stress across switch and total harmonic distortion when powered by same DC supply. Analytical results are verified using MATLAB.

Keywords: Diode Clamped, Pulse Width Modulation, total harmonic distortion, Z Source Inverter.

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103 Uniform Overlapped Multi-Carrier PWM for a Six-Level Diode Clamped Inverter

Authors: S.Srinivas

Abstract:

Multi-level voltage source inverters offer several advantages such as; derivation of a refined output voltage with reduced total harmonic distortion (THD), reduction of voltage ratings of the power semiconductor switching devices and also the reduced electro-magnetic-interference problems etc. In this paper, new carrier-overlapped phase-disposition or sub-harmonic sinusoidal pulse width modulation (CO-PD-SPWM) and also the carrieroverlapped phase-disposition space vector modulation (CO-PDSVPWM) schemes for a six-level diode-clamped inverter topology are proposed. The principle of the proposed PWM schemes is similar to the conventional PD-PWM with a little deviation from it in the sense that the triangular carriers are all overlapped. The overlapping of the triangular carriers on one hand results in an increased number of switchings, on the other hand this facilitates an improved spectral performance of the output voltage. It is demonstrated through simulation studies that the six-level diode-clamped inverter with the use of CO-PD-SPWM and CO-PD-SVPWM proposed in this paper is capable of generating multiple levels in its output voltage. The advantages of the proposed PWM schemes can be derived to benefit, especially at lower modulation indices of the inverter and hence this aspect of the proposed PWM schemes can be well exploited in high power applications requiring low speeds of operation of the drive.

Keywords: Diode clamped inverter, Pulse width modulation, Six level inverter, carrier based PWM.

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102 Parameters Estimation of Double Diode Solar Cell Model

Authors: M. R. AlRashidi, K. M. El-Naggar, M. F. AlHajri

Abstract:

A new technique based on Pattern search optimization is proposed for estimating different solar cell parameters in this paper. The estimated parameters are the generated photocurrent, saturation current, series resistance, shunt resistance, and ideality factor. The proposed approach is tested and validated using double diode model to show its potential. Performance of the developed approach is quite interesting which signifies its potential as a promising estimation tool.

Keywords: Solar Cell, Parameter Estimation, Pattern Search.

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101 Turbine Trip without Bypass Analysis of Kuosheng Nuclear Power Plant Using TRACE Coupling with FRAPTRAN

Authors: J. R. Wang, H. T. Lin, H. C. Chang, W. K. Lin, W. Y. Li, C. Shih

Abstract:

This analysis of Kuosheng nuclear power plant (NPP) was performed mainly by TRACE, assisted with FRAPTRAN and FRAPCON. SNAP v2.2.1 and TRACE v5.0p3 are used to develop the Kuosheng NPP SPU TRACE model which can simulate the turbine trip without bypass transient. From the analysis of TRACE, the important parameters such as dome pressure, coolant temperature and pressure can be determined. Through these parameters, comparing with the criteria which were formulated by United States Nuclear Regulatory Commission (U.S. NRC), we can determine whether the Kuoshengnuclear power plant failed or not in the accident analysis. However, from the data of TRACE, the fuel rods status cannot be determined. With the information from TRACE and burn-up analysis obtained from FRAPCON, FRAPTRAN analyzes more details about the fuel rods in this transient. Besides, through the SNAP interface, the data results can be presented as an animation. From the animation, the TRACE and FRAPTRAN data can be merged together that may be realized by the readers more easily. In this research, TRACE showed that the maximum dome pressure of the reactor reaches to 8.32 MPa, which is lower than the acceptance limit 9.58 MPa. Furthermore, FRAPTRAN revels that the maximum strain is about 0.00165, which is below the criteria 0.01. In addition, cladding enthalpy is 52.44 cal/g which is lower than 170 cal/g specified by the USNRC NUREG-0800 Standard Review Plan.

Keywords: Turbine trip without bypass, Kuosheng NPP, TRACE, FRAPTRAN, SNAP animation.

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100 SiC Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE

Authors: A. Lakrim, D. Tahri

Abstract:

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device.

Keywords: SiC MPS Diode, electro-thermal, SPICE Model.

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99 Simple and Advanced Models for Calculating Single-Phase Diode Rectifier Line-Side Harmonics

Authors: Hussein A. Kazem, Abdulhakeem Abdullah Albaloshi, Ali Said Ali Al-Jabri, Khamis Humaid AlSaidi

Abstract:

This paper proposes different methods for estimation of the harmonic currents of the single-phase diode bridge rectifier. Both simple and advanced methods are compared and the models are put into a context of practical use for calculating the harmonic distortion in a typical application. Finally, the different models are compared to measurements of a real application and convincing results are achieved.

Keywords: Single-phase rectifier, line side Harmonics

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98 Degradation in Organic Light Emitting Diodes

Authors: Saba Zare Zardareh, Farhad Akbari Boroumand

Abstract:

The objective is to fabricate organic light emitting diode and to study its degradation process in atmosphere condition in which PFO as an emitting material and PEDOT:PSS as a hole injecting material were used on ITO substrate. Thus degradation process of the OLED was studied upon its current-voltage characteristic. By fabricating this OLED and obtaining blue light and analysis of current-voltage characteristic during the time after fabrication, it was observed that the current of the OLED was exponentially decreased. Current reduction during the initial hours of fabrication was outstanding and after few days its reduction rate was dropped significantly, while the diode was dying.

Keywords: OLED, Degradation, Dark spot.

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97 Characterization of the In0.53Ga0.47As n+nn+ Photodetectors

Authors: Fatima Zohra Mahi, Luca Varani

Abstract:

We present an analytical model for the calculation of the sensitivity, the spectral current noise and the detective parameter for an optically illuminated In0.53Ga0.47As n+nn+ diode. The photocurrent due to the excess carrier is obtained by solving the continuity equation. Moreover, the current noise level is evaluated at room temperature and under a constant voltage applied between the diode terminals. The analytical calculation of the current noise in the n+nn+ structure is developed by considering the free carries fluctuations. The responsivity and the detection parameter are discussed as functions of the doping concentrations and the emitter layer thickness in one-dimensional homogeneous n+nn+ structure.

Keywords: Responsivity, detection parameter, photo-detectors, continuity equation, current noise.

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