%0 Journal Article
	%A Su Jeong Lee and  Tae Il Lee and  Jung Han Kim and  Chul-Hong Kim and  Gee Sung Chae and  Jae-Min Myoung
	%D 2015
	%J International Journal of Materials and Metallurgical Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 97, 2015
	%T Transparent and Solution Processable Low Contact Resistance SWCNT/AZONP Bilayer Electrodes for Sol-Gel Metal Oxide Thin Film Transistor
	%U https://publications.waset.org/pdf/10000425
	%V 97
	%X The contact resistance between source/drain electrodes
and semiconductor layer is an important parameter affecting electron
transporting performance in the thin film transistor (TFT). In this
work, we introduced a transparent and the solution prossable
single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle
(AZO NP) bilayer electrodes showing low contact resistance with
indium-oxide (In2O3) sol gel thin film. By inserting low work function
AZO NPs into the interface between the SWCNTs and the In2O3 which
has a high energy barrier, we could obtain an electrical Ohmic contact
between them. Finally, with the SWCNT-AZO NP bilayer electrodes,
we successfully fabricated a TFT showing a field effect mobility of
5.38 cm2/V·s at 250°C.

	%P 118 - 121