@article{(Open Science Index):https://publications.waset.org/pdf/4635, title = {Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor}, author = {N. Shen and T. T. Le and H. Y. Yu and Z. X. Chen and K. T. Win and N. Singh and G. Q. Lo and D. -L. Kwong}, country = {}, institution = {}, abstract = {In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm. }, journal = {International Journal of Materials and Metallurgical Engineering}, volume = {5}, number = {9}, year = {2011}, pages = {798 - 800}, ee = {https://publications.waset.org/pdf/4635}, url = {https://publications.waset.org/vol/57}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 57, 2011}, }