@article{(Open Science Index):https://publications.waset.org/pdf/9996801, title = {Metal-Semiconductor-Metal Photodetector Based On Porous In0.08Ga0.92N}, author = {Saleh H. Abud and Z. Hassan and F. K. Yam}, country = {}, institution = {}, abstract = {Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390nm chopped light. Finally, the sensitivity and quantum efficiency were also studied. }, journal = {International Journal of Nuclear and Quantum Engineering}, volume = {7}, number = {12}, year = {2013}, pages = {1002 - 1004}, ee = {https://publications.waset.org/pdf/9996801}, url = {https://publications.waset.org/vol/84}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 84, 2013}, }