Saleh H. Abud and Z. Hassan and F. K. Yam, Metal-Semiconductor-Metal Photodetector Based On Porous In0.08Ga0.92N. journal = {International Journal of Nuclear and Quantum Engineering}, [online]. World Academy of Science, Engineering and Technology. November 2013, vol. 84(12). 1002 - 1004 [viewed 20 September 2024]. Available from: https://publications.waset.org/pdf/9996801.