Search results for: and biasing circuits.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 239

Search results for: and biasing circuits.

239 Comprehensive Nonlinearity Simulation of Different Types and Modes of HEMTs with Respect to Biasing Conditions

Authors: M. M. Karkhanehchi, A. Ammani

Abstract:

A simple analytical model has been developed to optimize biasing conditions for obtaining maximum linearity among lattice-matched, pseudomorphic and metamorphic HEMT types as well as enhancement and depletion HEMT modes. A nonlinear current-voltage model has been simulated based on extracted data to study and select the most appropriate type and mode of HEMT in terms of a given gate-source biasing voltage within the device so as to employ the circuit for the highest possible output current or voltage linear swing. Simulation results can be used as a basis for the selection of optimum gate-source biasing voltage for a given type and mode of HEMT with regard to a circuit design. The consequences can also be a criterion for choosing the optimum type or mode of HEMT for a predetermined biasing condition.

Keywords: Biasing, characteristic, linearity, simulation.

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238 Subthreshold Circuit Performance Investigation under Temperature Variations

Authors: Mohd. Hasan, Ajmal Kafeel, S. D. Pable

Abstract:

Ultra-low-power (ULP) circuits have received widespread attention due to the rapid growth of biomedical applications and Battery-less Electronics. Subthreshold region of transistor operation is used in ULP circuits. Major research challenge in the subthreshold operating region is to extract the ULP benefits with minimal degradation in speed and robustness. Process, Voltage and Temperature (PVT) variations significantly affect the performance of subthreshold circuits. Designed performance parameters of ULP circuits may vary largely due to temperature variations. Hence, this paper investigates the effect of temperature variation on device and circuit performance parameters at different biasing voltages in the subthreshold region. Simulation results clearly demonstrate that in deep subthreshold and near threshold voltage regions, performance parameters are significantly affected whereas in moderate subthreshold region, subthreshold circuits are more immune to temperature variations. This establishes that moderate subthreshold region is ideal for temperature immune circuits.

Keywords: Subthreshold, temperature variations, ultralow power.

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237 Internal Node Stabilization for Voltage Sense Amplifiers in Multi-Channel Systems

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

Keywords: Voltage sense amplifier, voltage transition, node stabilization, and biasing circuits.

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236 Low Leakage MUX/XOR Functions Using Symmetric and Asymmetric FinFETs

Authors: Farid Moshgelani, Dhamin Al-Khalili, Côme Rozon

Abstract:

In this paper, FinFET devices are analyzed with emphasis on sub-threshold leakage current control. This is achieved through proper biasing of the back gate, and through the use of asymmetric work functions for the four terminal FinFET devices. We are also examining different configurations of multiplexers and XOR gates using transistors of symmetric and asymmetric work functions. Based on extensive characterization data for MUX circuits, our proposed configuration using symmetric devices lead to leakage current and delay improvements of 65% and 47% respectively compared to results in the literature. For XOR gates, a 90% improvement in the average leakage current is achieved by using asymmetric devices. All simulations are based on a 25nm FinFET technology using the University of Florida UFDG model.

Keywords: FinFET, logic functions, asymmetric workfunction devices, back gate biasing, sub-threshold leakage current.

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235 New Design Methodologies for High Speed Low Power XOR-XNOR Circuits

Authors: Shiv Shankar Mishra, S. Wairya, R. K. Nagaria, S. Tiwari

Abstract:

New methodologies for XOR-XNOR circuits are proposed to improve the speed and power as these circuits are basic building blocks of many arithmetic circuits. This paper evaluates and compares the performance of various XOR-XNOR circuits. The performance of the XOR-XNOR circuits based on TSMC 0.18μm process models at all range of the supply voltage starting from 0.6V to 3.3V is evaluated by the comparison of the simulation results obtained from HSPICE. Simulation results reveal that the proposed circuit exhibit lower PDP and EDP, more power efficient and faster when compared with best available XOR-XNOR circuits in the literature.

Keywords: Exclusive-OR (XOR), Exclusive-NOR (XNOR), High speed, Low power, Arithmetic Circuits.

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234 Highly Optimized Novel High Speed Low Power Barrel Shifter at 22nm Hi K Metal Gate Strained Si Technology Node

Authors: Shobha Sharma, Amita Dev

Abstract:

This research paper presents highly optimized barrel shifter at 22nm Hi K metal gate strained Si technology node. This barrel shifter is having a unique combination of static and dynamic body bias which gives lowest power delay product. This power delay product is compared with the same circuit at same technology node with static forward biasing at ‘supply/2’ and also with normal reverse substrate biasing and still found to be the lowest. The power delay product of this barrel sifter is .39362X10-17J and is lowered by approximately 78% to reference proposed barrel shifter at 32nm bulk CMOS technology. Power delay product of barrel shifter at 22nm Hi K Metal gate technology with normal reverse substrate bias is 2.97186933X10-17J and can be compared with this design’s PDP of .39362X10-17J. This design uses both static and dynamic substrate biasing and also has approximately 96% lower power delay product compared to only forward body biased at half of supply voltage. The NMOS model used are predictive technology models of Arizona state university and the simulations to be carried out using HSPICE simulator.

Keywords: Dynamic body biasing, highly optimized barrel shifter, PDP, Static body biasing.

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233 Design of 900 MHz High Gain SiGe Power Amplifier with Linearity Improved Bias Circuit

Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Abstract:

A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: High gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra Series.

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232 Very High Speed Data Driven Dynamic NAND Gate at 22nm High K Metal Gate Strained Silicon Technology Node

Authors: Shobha Sharma, Amita Dev

Abstract:

Data driven dynamic logic is the high speed dynamic circuit with low area. The clock of the dynamic circuit is removed and data drives the circuit instead of clock for precharging purpose. This data driven dynamic nand gate is given static forward substrate biasing of Vsupply/2 as well as the substrate bias is connected to the input data, resulting in dynamic substrate bias. The dynamic substrate bias gives the shortest propagation delay with a penalty on the power dissipation. Propagation delay is reduced by 77.8% compared to the normal reverse substrate bias Data driven dynamic nand. Also dynamic substrate biased D3nand’s propagation delay is reduced by 31.26% compared to data driven dynamic nand gate with static forward substrate biasing of Vdd/2. This data driven dynamic nand gate with dynamic body biasing gives us the highest speed with no area penalty and finds its applications where power penalty is acceptable. Also combination of Dynamic and static Forward body bias can be used with reduced propagation delay compared to static forward biased circuit and with comparable increase in an average power. The simulations were done on hspice simulator with 22nm High-k metal gate strained Si technology HP models of Arizona State University, USA.

Keywords: Data driven nand gate, dynamic substrate biasing, nand gate, static substrate biasing.

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231 An Efficient VLSI Design Approach to Reduce Static Power using Variable Body Biasing

Authors: Md. Asif Jahangir Chowdhury, Md. Shahriar Rizwan, M. S. Islam

Abstract:

In CMOS integrated circuit design there is a trade-off between static power consumption and technology scaling. Recently, the power density has increased due to combination of higher clock speeds, greater functional integration, and smaller process geometries. As a result static power consumption is becoming more dominant. This is a challenge for the circuit designers. However, the designers do have a few methods which they can use to reduce this static power consumption. But all of these methods have some drawbacks. In order to achieve lower static power consumption, one has to sacrifice design area and circuit performance. In this paper, we propose a new method to reduce static power in the CMOS VLSI circuit using Variable Body Biasing technique without being penalized in area requirement and circuit performance.

Keywords: variable body biasing, state saving technique, stack effect, dual V-th, static power reduction.

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230 Current Mode Logic Circuits for 10-bit 5GHz High Speed Digital to Analog Converter

Authors: Zhenguo Vincent Chia, Sheung Yan Simon Ng, Minkyu Je

Abstract:

This paper presents CMOS Current Mode Logic (CML) circuits for a high speed Digital to Analog Converter (DAC) using standard CMOS 65nm process. The CML circuits have the propagation delay advantage over its conventional CMOS counterparts due to smaller output voltage swing and tunable bias current. The CML circuits proposed in this paper can achieve a maximum propagation delay of only 9.3ps, which can satisfy the stringent requirement for the 5 GHz high speed DAC application. Another advantage for CML circuits is its dynamic symmetry characteristic resulting in a reduction of an additional inverter. Simulation results show that the proposed CML circuits can operate from 1.08V to 1.3V with temperature ranging from -40 to +120°C.

Keywords: Conventional, Current Mode Logic, DAC, Decoder

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229 A Matlab / Simulink Based Tool for Power Electronic Circuits

Authors: Abdulatif A. M. Shaban

Abstract:

Transient simulation of power electronic circuits is of considerable interest to the designer. The switching nature of the devices used permits development of specialized algorithms which allow a considerable reduction in simulation time compared to general purpose simulation algorithms. This paper describes a method used to simulate a power electronic circuits using the SIMULINK toolbox within MATLAB software. Theoretical results are presented provides the basis of transient analysis of a power electronic circuits.

Keywords: Modelling, Simulation.

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228 Efficient Study of Substrate Integrated Waveguide Devices

Authors: J. Hajri, H. Hrizi, N. Sboui, H. Baudrand

Abstract:

This paper presents a study of SIW circuits (Substrate Integrated Waveguide) with a rigorous and fast original approach based on Iterative process (WCIP). The theoretical suggested study is validated by the simulation of two different examples of SIW circuits. The obtained results are in good agreement with those of measurement and with software HFSS.

Keywords: Convergence study, HFSS, Modal decomposition, SIW Circuits, WCIP Method.

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227 Design and Testing of Nanotechnology Based Sequential Circuits Using MX-CQCA Logic in VHDL

Authors: K. Maria Agnes, J. Joshua Bapu

Abstract:

This paper impart the design and testing of Nanotechnology based sequential circuits using multiplexer conservative QCA (MX-CQCA) logic gates, which is easily testable using only two vectors. This method has great prospective in the design of sequential circuits based on reversible conservative logic gates and also smashes the sequential circuits implemented in traditional gates in terms of testability. Reversible circuits are similar to usual logic circuits except that they are built from reversible gates. Designs of multiplexer conservative QCA logic based two vectors testable double edge triggered (DET) sequential circuits in VHDL language are also accessible here; it will also diminish intricacy in testing side. Also other types of sequential circuits such as D, SR, JK latches are designed using this MX-CQCA logic gate. The objective behind the proposed design methodologies is to amalgamate arithmetic and logic functional units optimizing key metrics such as garbage outputs, delay, area and power. The projected MX-CQCA gate outshines other reversible gates in terms of the intricacy, delay.

Keywords: Conservative logic, Double edge triggered (DET) flip flop, majority voters, MX-CQCA gate, reversible logic, Quantum dot Cellular automata.

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226 Synthesis of Digital Circuits with Genetic Algorithms: A Fractional-Order Approach

Authors: Cecília Reis, J. A. Tenreiro Machado, J. Boaventura Cunha

Abstract:

This paper analyses the performance of a genetic algorithm using a new concept, namely a fractional-order dynamic fitness function, for the synthesis of combinational logic circuits. The experiments reveal superior results in terms of speed and convergence to achieve a solution.

Keywords: Circuit design, fractional-order systems, genetic algorithms, logic circuits.

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225 Micropower Fuzzy Linguistic-Hedges Circuit in Current-Mode Approach

Authors: E. Farshidi

Abstract:

In this paper, based on a novel synthesis, a set of new simplified circuit design to implement the linguistic-hedge operations for adjusting the fuzzy membership function set is presented. The circuits work in current-mode and employ floating-gate MOS (FGMOS) transistors that operate in weak inversion region. Compared to the other proposed circuits, these circuits feature severe reduction of the elements number, low supply voltage (0.7V), low power consumption (<200nW), immunity from body effect and wide input dynamic range (>60dB). In this paper, a set of fuzzy linguistic hedge circuits, including absolutely, very, much more, more, plus minus, more or less and slightly, has been implemented in 0.18 mm CMOS process. Simulation results by Hspice confirm the validity of the proposed design technique and show high performance of the circuits.

Keywords: Current-mode, Linguistic-Hedge, Fuzzy Logic, lowpower

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224 A Power-Gating Scheme to Reduce Leakage Power for P-type Adiabatic Logic Circuits

Authors: Hong Li, Linfeng Li, Jianping Hu

Abstract:

With rapid technology scaling, the proportion of the static power consumption catches up with dynamic power consumption gradually. To decrease leakage consumption is becoming more and more important in low-power design. This paper presents a power-gating scheme for P-DTGAL (p-type dual transmission gate adiabatic logic) circuits to reduce leakage power dissipations under deep submicron process. The energy dissipations of P-DTGAL circuits with power-gating scheme are investigated in different processes, frequencies and active ratios. BSIM4 model is adopted to reflect the characteristics of the leakage currents. HSPICE simulations show that the leakage loss is greatly reduced by using the P-DTGAL with power-gating techniques.

Keywords: Leakage reduction, low power, deep submicronCMOS circuits, P-type adiabatic circuits.

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223 Stabilization Technique for Multi-Inputs Voltage Sense Amplifiers in Node Sharing Converters

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively.

Keywords: Voltage sense amplifier, multi-inputs, voltage transition, node stabilization, and biasing circuits.

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222 Two Kinds of Self-Oscillating Circuits Mechanically Demonstrated

Authors: Shiang-Hwua Yu, Po-Hsun Wu

Abstract:

This study introduces two types of self-oscillating circuits that are frequently found in power electronics applications. Special effort is made to relate the circuits to the analogous mechanical systems of some important scientific inventions: Galileo’s pendulum clock and Coulomb’s friction model. A little touch of related history and philosophy of science will hopefully encourage curiosity, advance the understanding of self-oscillating systems and satisfy the aspiration of some students for scientific literacy. Finally, the two self-oscillating circuits are applied to design a simple class-D audio amplifier.

Keywords: Self-oscillation, sigma-delta modulator, pendulum clock, Coulomb friction, class-D amplifier.

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221 Synthesis of Logic Circuits Using Fractional-Order Dynamic Fitness Functions

Authors: Cecília Reis, J. A. Tenreiro Machado, J. Boaventura Cunha

Abstract:

This paper analyses the performance of a genetic algorithm using a new concept, namely a fractional-order dynamic fitness function, for the synthesis of combinational logic circuits. The experiments reveal superior results in terms of speed and convergence to achieve a solution.

Keywords: Circuit design, fractional-order systems, genetic algorithms, logic circuits

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220 Inverter Based Gain-Boosting Fully Differential CMOS Amplifier

Authors: Alpana Agarwal, Akhil Sharma

Abstract:

This work presents a fully differential CMOS amplifier consisting of two self-biased gain boosted inverter stages, that provides an alternative to the power hungry operational amplifier. The self-biasing avoids the use of external biasing circuitry, thus reduces the die area, design efforts, and power consumption. In the present work, regulated cascode technique has been employed for gain boosting. The Miller compensation is also applied to enhance the phase margin. The circuit has been designed and simulated in 1.8 V 0.18 µm CMOS technology. The simulation results show a high DC gain of 100.7 dB, Unity-Gain Bandwidth of 107.8 MHz, and Phase Margin of 66.7o with a power dissipation of 286 μW and makes it suitable candidate for the high resolution pipelined ADCs.

Keywords: CMOS amplifier, gain boosting, inverter-based amplifier, self-biased inverter.

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219 Comparative Performance Analysis of Nonlinearity Cancellation Techniques for MOS-C Realization in Integrator Circuits

Authors: Hasan Çiçekli, Ahmet Gökçen, Uğur Çam

Abstract:

In this paper, a comparative performance analysis of mostly used four nonlinearity cancellation techniques used to realize the passive resistor by MOS transistors, is presented. The comparison is done by using an integrator circuit which is employing sequentially Op-amp, OTRA and ICCII as active element. All of the circuits are implemented by MOS-C realization and simulated by PSPICE program using 0.35μm process TSMC MOSIS model parameters. With MOS-C realization, the circuits became electronically tunable and fully integrable which is very important in IC design. The output waveforms, frequency responses, THD analysis results and features of the nonlinearity cancellation techniques are also given.

Keywords: Integrator circuits, MOS-C realization, nonlinearity cancellation, tunable resistors.

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218 Feasibility of the Evolutionary Algorithm using Different Behaviours of the Mutation Rate to Design Simple Digital Logic Circuits

Authors: Konstantin Movsovic, Emanuele Stomeo, Tatiana Kalganova

Abstract:

The evolutionary design of electronic circuits, or evolvable hardware, is a discipline that allows the user to automatically obtain the desired circuit design. The circuit configuration is under the control of evolutionary algorithms. Several researchers have used evolvable hardware to design electrical circuits. Every time that one particular algorithm is selected to carry out the evolution, it is necessary that all its parameters, such as mutation rate, population size, selection mechanisms etc. are tuned in order to achieve the best results during the evolution process. This paper investigates the abilities of evolution strategy to evolve digital logic circuits based on programmable logic array structures when different mutation rates are used. Several mutation rates (fixed and variable) are analyzed and compared with each other to outline the most appropriate choice to be used during the evolution of combinational logic circuits. The experimental results outlined in this paper are important as they could be used by every researcher who might need to use the evolutionary algorithm to design digital logic circuits.

Keywords: Evolvable hardware, evolutionary algorithm, digitallogic circuit, mutation rate.

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217 Reduction of Leakage Power in Digital Logic Circuits Using Stacking Technique in 45 Nanometer Regime

Authors: P.K. Sharma, B. Bhargava, S. Akashe

Abstract:

Power dissipation due to leakage current in the digital circuits is a biggest factor which is considered specially while designing nanoscale circuits. This paper is exploring the ideas of reducing leakage current in static CMOS circuits by stacking the transistors in increasing numbers. Clearly it means that the stacking of OFF transistors in large numbers result a significant reduction in power dissipation. Increase in source voltage of NMOS transistor minimizes the leakage current. Thus stacking technique makes circuit with minimum power dissipation losses due to leakage current. Also some of digital circuits such as full adder, D flip flop and 6T SRAM have been simulated in this paper, with the application of reduction technique on ‘cadence virtuoso tool’ using specter at 45nm technology with supply voltage 0.7V.

Keywords: Stack, 6T SRAM cell, low power, threshold voltage

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216 Design and Implementation of Quantum Cellular Automata Based Novel Adder Circuits

Authors: Santanu Santra, Utpal Roy

Abstract:

The most important mathematical operation for any computing system is addition. An efficient adder can be of greater assistance in designing of any arithmetic circuits. Quantum-dot Cellular Automata (QCA) is a promising nanotechnology to create electronic circuits for computing devices and suitable candidate for next generation of computing systems. The article presents a modest approach to implement a novel XOR gate. The gate is simple in structure and powerful in terms of implementing digital circuits. By applying the XOR gate, the hardware requirement for a QCA circuit can be decrease and circuits can be simpler in level, clock phase and cell count. In order to verify the functionality of the proposed device some implementation of Half Adder (HA) and Full Adder (FA) is checked by means of computer simulations using QCA-Designer tool. Simulation results and physical relations confirm its usefulness in implementing every digital circuit.

Keywords: Clock, Computing system, Majority gate, QCA, QCA Designer.

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215 Memristor-A Promising Candidate for Neural Circuits in Neuromorphic Computing Systems

Authors: Juhi Faridi, Mohd. Ajmal Kafeel

Abstract:

The advancements in the field of Artificial Intelligence (AI) and technology has led to an evolution of an intelligent era. Neural networks, having the computational power and learning ability similar to the brain is one of the key AI technologies. Neuromorphic computing system (NCS) consists of the synaptic device, neuronal circuit, and neuromorphic architecture. Memristor are a promising candidate for neuromorphic computing systems, but when it comes to neuromorphic computing, the conductance behavior of the synaptic memristor or neuronal memristor needs to be studied thoroughly in order to fathom the neuroscience or computer science. Furthermore, there is a need of more simulation work for utilizing the existing device properties and providing guidance to the development of future devices for different performance requirements. Hence, development of NCS needs more simulation work to make use of existing device properties. This work aims to provide an insight to build neuronal circuits using memristors to achieve a Memristor based NCS.  Here we throw a light on the research conducted in the field of memristors for building analog and digital circuits in order to motivate the research in the field of NCS by building memristor based neural circuits for advanced AI applications. This literature is a step in the direction where we describe the various Key findings about memristors and its analog and digital circuits implemented over the years which can be further utilized in implementing the neuronal circuits in the NCS. This work aims to help the electronic circuit designers to understand how the research progressed in memristors and how these findings can be used in implementing the neuronal circuits meant for the recent progress in the NCS.

Keywords: Analog circuits, digital circuits, memristors, neuromorphic computing systems.

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214 Design and Optimization of Parity Generator and Parity Checker Based On Quantum-dot Cellular Automata

Authors: Santanu Santra, Utpal Roy

Abstract:

Quantum-dot Cellular Automata (QCA) is one of the most substitute emerging nanotechnologies for electronic circuits, because of lower power consumption, higher speed and smaller size in comparison with CMOS technology. The basic devices, a Quantum-dot cell can be used to implement logic gates and wires. As it is the fundamental building block on nanotechnology circuits. By applying XOR gate the hardware requirements for a QCA circuit can be decrease and circuits can be simpler in terms of level, delay and cell count. This article present a modest approach for implementing novel optimized XOR gate, which can be applied to design many variants of complex QCA circuits. Proposed XOR gate is simple in structure and powerful in terms of implementing any digital circuits. In order to verify the functionality of the proposed design some complex implementation of parity generator and parity checker circuits are proposed and simulating by QCA Designer tool and compare with some most recent design. Simulation results and physical relations confirm its usefulness in implementing every digital circuit.

Keywords: Clock, CMOS technology, Logic gates, QCA Designer, Quantum-dot Cellular Automata (QCA).

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213 Design of High-speed Modified Booth Multipliers Operating at GHz Ranges

Authors: Soojin Kim, Kyeongsoon Cho

Abstract:

This paper describes the pipeline architecture of high-speed modified Booth multipliers. The proposed multiplier circuits are based on the modified Booth algorithm and the pipeline technique which are the most widely used to accelerate the multiplication speed. In order to implement the optimally pipelined multipliers, many kinds of experiments have been conducted. The speed of the multipliers is greatly improved by properly deciding the number of pipeline stages and the positions for the pipeline registers to be inserted. We described the proposed modified Booth multiplier circuits in Verilog HDL and synthesized the gate-level circuits using 0.13um standard cell library. The resultant multiplier circuits show better performance than others. Since the proposed multipliers operate at GHz ranges, they can be used in the systems requiring very high performance.

Keywords: multiplier, pipeline, high-speed, modified Boothalgorithm.

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212 Improving the LDMOS Temperature Compensation Bias Circuit to Optimize Back-Off

Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: Amplifier, DVB-T, LDMOS, MOSFETS.

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211 Chose the Right Mutation Rate for Better Evolve Combinational Logic Circuits

Authors: Emanuele Stomeo, Tatiana Kalganova, Cyrille Lambert

Abstract:

Evolvable hardware (EHW) is a developing field that applies evolutionary algorithm (EA) to automatically design circuits, antennas, robot controllers etc. A lot of research has been done in this area and several different EAs have been introduced to tackle numerous problems, as scalability, evolvability etc. However every time a specific EA is chosen for solving a particular task, all its components, such as population size, initialization, selection mechanism, mutation rate, and genetic operators, should be selected in order to achieve the best results. In the last three decade the selection of the right parameters for the EA-s components for solving different “test-problems" has been investigated. In this paper the behaviour of mutation rate for designing logic circuits, which has not been done before, has been deeply analyzed. The mutation rate for an EHW system modifies the number of inputs of each logic gates, the functionality (for example from AND to NOR) and the connectivity between logic gates. The behaviour of the mutation has been analyzed based on the number of generations, genotype redundancy and number of logic gates for the evolved circuits. The experimental results found provide the behaviour of the mutation rate during evolution for the design and optimization of simple logic circuits. The experimental results propose the best mutation rate to be used for designing combinational logic circuits. The research presented is particular important for those who would like to implement a dynamic mutation rate inside the evolutionary algorithm for evolving digital circuits. The researches on the mutation rate during the last 40 years are also summarized.

Keywords: Design of logic circuit, evolutionary computation, evolvable hardware, mutation rate.

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210 Importance of Hardware Systems and Circuits in Secure Software Development Life Cycle

Authors: Mir Shahriar Emami

Abstract:

Although it is fully impossible to ensure that a software system is quite secure, developing an acceptable secure software system in a convenient platform is not unreachable. In this paper, we attempt to analyze software development life cycle (SDLC) models from the hardware systems and circuits point of view. To date, the SDLC models pay merely attention to the software security from the software perspectives. In this paper, we present new features for SDLC stages to emphasize the role of systems and circuits in developing secure software system through the software development stages, the point that has not been considered previously in the SDLC models.

Keywords: Systems and circuits security, software security, software process engineering, SDLC, SSDLC.

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