%0 Journal Article
	%A M. M. Karkhanehchi and  A. Ammani
	%D 2010
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 44, 2010
	%T Comprehensive Nonlinearity Simulation of Different Types and Modes of HEMTs with Respect to Biasing Conditions
	%U https://publications.waset.org/pdf/10806
	%V 44
	%X A simple analytical model has been developed to
optimize biasing conditions for obtaining maximum linearity among
lattice-matched, pseudomorphic and metamorphic HEMT types as
well as enhancement and depletion HEMT modes. A nonlinear
current-voltage model has been simulated based on extracted data to
study and select the most appropriate type and mode of HEMT in
terms of a given gate-source biasing voltage within the device so as
to employ the circuit for the highest possible output current or
voltage linear swing. Simulation results can be used as a basis for the
selection of optimum gate-source biasing voltage for a given type
and mode of HEMT with regard to a circuit design. The
consequences can also be a criterion for choosing the optimum type
or mode of HEMT for a predetermined biasing condition.
	%P 1156 - 1161