WASET
    Shobha Sharma and  Amita Dev,  Very High Speed Data Driven Dynamic NAND Gate at 22nm High K Metal Gate Strained Silicon Technology Node.   journal   = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology.
    February 2016, vol. 109(1). 157 - 162
    [viewed 28 March 2024]. Available from: https://publications.waset.org/pdf/10003936.