Search results for: Voltage sense amplifier

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

Keywords: Voltage sense amplifier, voltage transition, node stabilization, and biasing circuits.

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Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively.

Keywords: Voltage sense amplifier, multi-inputs, voltage transition, node stabilization, and biasing circuits.

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Authors: Syed Iftekhar Ali, M. S. Islam

Abstract:

In this paper we present an energy efficient match-line (ML) sensing scheme for high-speed ternary content-addressable memory (TCAM). The proposed scheme isolates the sensing unit of the sense amplifier from the large and variable ML capacitance. It employs feedback in the sense amplifier to successfully detect a match while keeping the ML voltage swing low. This reduced voltage swing results in large energy saving. Simulation performed using 130nm 1.2V CMOS logic shows at least 30% total energy saving in our scheme compared to popular current race (CR) scheme for similar search speed. In terms of speed, dynamic energy, peak power consumption and transistor count our scheme also shows better performance than mismatch-dependant (MD) power allocation technique which also employs feedback in the sense amplifier. Additionally, the implementation of our scheme is simpler than CR or MD scheme because of absence of analog control voltage and programmable delay circuit as have been used in those schemes.

Keywords: content-addressable memory, energy consumption, feedback, peak power, sensing scheme, sense amplifier, ternary.

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Authors: Yngvar Berg, Mehdi Azadmehr

Abstract:

In this paper we present a linear autozeroing ultra lowvoltage amplifier. The autozeroing performed by all ULV circuits is important to reduce the impact of noise and especially avoid power supply noise in mixed signal low-voltage CMOS circuits. The simulated data presented is relevant for a 90nm TSMC CMOS process.

Keywords: Low-voltage, trans conductance amplifier, linearity, floating-gate.

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Authors: Xiwei Huang, Hyouk-Kyu Cha, Dongning Zhao, Bin Guo, Minkyu Je, Hao Yu

Abstract:

This paper presents the design and implementation of a fully integrated transimpedance amplifier (TIA) as the analog frontend receiver for Capacitive Micromachined Ultrasound Transducers (CMUTs) for ultrasound biomicroscope imaging application. The amplifier is designed to amplify the received signals from 17.5MHz to 52.5MHz with a center frequency of 35MHz. The TIA was fabricated in GF 0.18μm 1P6M 30V high voltage process. The measurement results show that the designed amplifier can reach a transimpedance gain of 61.08dBΩ and operating frequency from 17.5MHz to 100MHz with 1VP-P output voltage under 6V power supply.

Keywords: 3D ultrasound biomicroscope, analog front-end, transimpedance amplifier, CMUT

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Authors: Maninder Kaur Gill, Alpana Agarwal

Abstract:

It is practically not feasible to measure the open-loop voltage gain of the operational amplifier in the open loop configuration. It is because the open-loop voltage gain of the operational amplifier is very large. In order to avoid the saturation of the output voltage, a very small input should be given to operational amplifier which is not possible to be measured practically by a digital multimeter. A test circuit for measurement of open loop voltage gain of an operational amplifier has been proposed and verified using simulation tools as well as by experimental methods on breadboard. The main advantage of this test circuit is that it is simple, fast, accurate, cost effective, and easy to handle even on a breadboard. The test circuit requires only the device under test (DUT) along with resistors. This circuit has been tested for measurement of open loop voltage gain for different operational amplifiers. The underlying goal is to design testable circuits for various analog devices that are simple to realize in VLSI systems, giving accurate results and without changing the characteristics of the original system. The DUTs used are LM741CN and UA741CP. For LM741CN, the simulated gain and experimentally measured gain (average) are calculated as 89.71 dB and 87.71 dB, respectively. For UA741CP, the simulated gain and experimentally measured gain (average) are calculated as 101.15 dB and 105.15 dB, respectively. These values are found to be close to the datasheet values.

Keywords: Device under test, open-loop voltage gain, operational amplifier, test circuit.

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Authors: Guo-Ming Sung, Naga Raju Naik R.

Abstract:

Paper presents a low power, high speed, sense-amplifier based flip-flop (SAFF). The flip-flop’s power con-sumption and delay are greatly reduced by employing a new conditionally precharge sense-amplifier stage and a single-ended latch stage. Glitch-free and contention-free latch operation is achieved by using a conditional cut-off strategy. The design uses fewer transistors, has a lower clock load, and has a simple structure, all of which contribute to a near-zero setup time. When compared to previous flip-flop structures proposed for similar input/output conditions, this design’s performance and overall PDP have improved. The post layout simulation of the circuit uses 2.91µW of power and has a delay of 65.82 ps. Overall, the power-delay product has seen some enhancements. Cadence Virtuoso Designing tool with CMOS 90nm technology are used for all designs.

Keywords: high-speed, low-power, flip-flop, sense-amplifier

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Authors: Salwa M. Salah Eldeen, Fathi A. Farag, Abd Allah M. Moselhy

Abstract:

This paper proposed a new CAD tools for microwave amplifier design. The proposed tool is based on survey about the broadband amplifier design methods, such as the Feedback amplifiers, balanced amplifiers and Compensated Matching Network The proposed tool is developed for broadband amplifier using a compensated matching network "unconditional stability amplifier". The developed program is based on analytical procedures with ability of smith chart explanation. The C# software is used for the proposed tools implementation. The program is applied on broadband amplifier as an example for testing. The designed amplifier is considered as a broadband amplifier at the range 300-700 MHz. The results are highly agreement with the expected results. Finally, these methods can be extended for wide band amplifier design.

Keywords: Broadband amplifier (BBA), Compensated Matching Network, Microwave Amplifier.

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Authors: Suresh Alapati, Sreehari Rao Patri, K. S. R. Krishna Prasad

Abstract:

Anultra-low power capacitor less low-dropout voltage regulator with improved transient response using gain enhanced feed forward path compensation is presented in this paper. It is based on a cascade of a voltage amplifier and a transconductor stage in the feed forward path with regular error amplifier to form a composite gainenhanced feed forward stage. It broadens the gain bandwidth and thus improves the transient response without substantial increase in power consumption. The proposed LDO, designed for a maximum output current of 100 mA in UMC 180 nm, requires a quiescent current of 69 )A. An undershot of 153.79mV for a load current changes from 0mA to 100mA and an overshoot of 196.24mV for current change of 100mA to 0mA. The settling time is approximately 1.1 )s for the output voltage undershooting case. The load regulation is of 2.77 )V/mA at load current of 100mA. Reference voltage is generated by using an accurate band gap reference circuit of 0.8V.The costly features of SOC such as total chip area and power consumption is drastically reduced by the use of only a total compensation capacitance of 6pF while consuming power consumption of 0.096 mW.

Keywords: Capacitor-less LDO, frequency compensation, Transient response, latch, self-biased differential amplifier.

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Authors: Tarun Kumar Rawat, Abhirup Lahiri, Ashish Gupta

Abstract:

In this paper, we analyze the effect of noise in a single- ended input differential amplifier working at high frequencies. Both extrinsic and intrinsic noise are analyzed using time domain method employing techniques from stochastic calculus. Stochastic differential equations are used to obtain autocorrelation functions of the output noise voltage and other solution statistics like mean and variance. The analysis leads to important design implications and suggests changes in the device parameters for improved noise characteristics of the differential amplifier.

Keywords: Single-ended input differential amplifier, Noise, stochastic differential equation, mean and variance.

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Authors: Haridas Kuruveettil, Dongning Zhao, Cheong Jia Hao, Minkyu Je

Abstract:

We present the design of Analog front end (AFE) low noise pre-amplifier implemented in a high voltage 0.18-µm CMOS technology for  a three dimensional ultrasound  bio microscope (3D UBM) application. The fabricated chip has 4X16 pre-amplifiers implemented to interface   a 2-D array of    high frequency capacitive micro-machined ultrasound transducers (CMUT). Core AFE cell consists of a high-voltage pulser in the transmit path, and a low-noise transimpedance amplifier in the receive path. Proposed system offers a high image resolution by the use of high frequency CMUTs with associated high performance imaging electronics integrated together.  Performance requirements and the design methods of the high bandwidth transimpedance amplifier are described in the paper. A single cell of transimpedance (TIA) amplifier and the bias circuit occupies a silicon area of 250X380 µm² and the full chip occupies a total silicon area of 10x6.8 mm².

Keywords: Ultrasound, analog front end, medical imaging, beam forming, biomicroscope, transimpedance gain.

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Authors: Bhaba Priyo Das, Neville Watson, Yonghe Liu

Abstract:

In recent years Operational Transconductance Amplifier based high frequency integrated circuits, filters and systems have been widely investigated. The usefulness of OTAs over conventional OP-Amps in the design of both first order and second order active filters are well documented. This paper discusses some of the tunability issues using the Matlab/Simulink® software which are previously unreported for any commercial OTA. Using the simulation results two first order voltage controlled all pass filters with phase tuning capability are proposed.

Keywords: All pass filter, Operational Transconductance Amplifier, Simulation.

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Authors: Renbin Dai, Rana Arslan Ali Khan

Abstract:

The design of Class A and Class AB 2-stage X band Power Amplifier is described in this report. This power amplifier is part of a transceiver used in radar for monitoring iron characteristics in a blast furnace. The circuit was designed using foundry WIN Semiconductors. The specification requires 15dB gain in the linear region, VSWR nearly 1 at input as well as at the output, an output power of 10 dBm and good stable performance in the band 10.9-12.2 GHz. The design was implemented by using inter-stage configuration, the Class A amplifier was chosen for driver stage i.e. the first amplifier focusing on the gain and the output amplifier conducted at Class AB with more emphasis on output power.

Keywords: Power amplifier, Class AB, Class A, MMIC, 2-stage, X band.

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Authors: Rahul Bansal, Sudipta Majumdar

Abstract:

This paper presents the closed form nonlinear expressions of bipolar junction transistor (BJT) differential amplifier (DA) using perturbation method. Circuit equations have been derived using Kirchhoff’s voltage law (KVL) and Kirchhoff’s current law (KCL). The perturbation method has been applied to state variables for obtaining the linear and nonlinear terms. The implementation of the proposed method is simple. The closed form nonlinear expressions provide better insights of physical systems. The derived equations can be used for signal processing applications.

Keywords: Differential amplifier, perturbation method, Taylor series.

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Authors: Akash Rathee, Harish Parthasarathy

Abstract:

In this paper, a frequency-variation based method has been proposed for transistor parameter estimation in a commonemitter transistor amplifier circuit. We design an algorithm to estimate the transistor parameters, based on noisy measurements of the output voltage when the input voltage is a sine wave of variable frequency and constant amplitude. The common emitter amplifier circuit has been modelled using the transistor Ebers-Moll equations and the perturbation technique has been used for separating the linear and nonlinear parts of the Ebers-Moll equations. This model of the amplifier has been used to determine the amplitude of the output sinusoid as a function of the frequency and the parameter vector. Then, applying the proposed method to the frequency components, the transistor parameters have been estimated. As compared to the conventional time-domain least squares method, the proposed method requires much less data storage and it results in more accurate parameter estimation, as it exploits the information in the time and frequency domain, simultaneously. The proposed method can be utilized for parameter estimation of an analog device in its operating range of frequencies, as it uses data collected from different frequencies output signals for parameter estimation.

Keywords: Perturbation Technique, Parameter estimation, frequency-variation based method.

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Authors: Hafiz Muhammad Obaid, Umais Tayyab, Shabbir Majeed Ch.

Abstract:

In this paper, a CMOS differential operational transresistance amplifier (OTRA) is presented. The amplifier is designed and implemented in a standard umc90-nm CMOS technology. The differential OTRA provides wider bandwidth at high gain. It also shows much better rise and fall time and exhibits a very good input current dynamic range of 50 to 50 μA. The OTRA can be used in many analog VLSI applications. The presented amplifier has high gain bandwidth product of 617.6 THz Ω. The total power dissipation of the presented amplifier is also very low and it is 0.21 mW.

Keywords: CMOS, differential, operational transresistance amplifier, OTRA, 90 nm, VLSI.

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Authors: Ahmed A. Al-Mudhafar, Ali A. Abduljabar, Hayder Jawad Albattat

Abstract:

This work suggests a microwave resonator sensor (MRS) device for measuring the oil’s breakdown voltage of high voltage transformers. A precise high-sensitivity sensor is designed and manufactured based on a microstrip split ring resonator (SRR). To improve the sensor sensitivity, a radio frequency (RF) amplifier of 30 dB gain is linked through a transmission line of 50Ω. The sensor operates at a microwave band (L) with a quality factor of 1.35 × 105 when it is loaded with an empty tube. In this work, the sensor has been tested with three samples of high voltage transformer oil of different ages (new, middle, and damaged) where the quality factor differs with each sample. A mathematical model was built to calculate the breakdown voltage of the transformer oils and the accuracy of the results was higher than 90%.

Keywords: Active resonator sensor, oil breakdown voltage, transformers oils, quality factor.

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Authors: Jan Doutreloigne

Abstract:

The main goal of this paper is to develop a switching amplifier with optimized power efficiency for analog signals with a very high crest factor such as audio or DSL signals. Theoretical calculations show that a switching amplifier architecture based on multi-level pulse width modulation outperforms all other types of linear or switching amplifiers in that respect. Simulations on a 2 W multi-level switching audio amplifier, designed in a 50 V 0.35 mm IC technology, confirm its superior performance in terms of power efficiency. A real silicon implementation of this audio amplifier design is currently underway to provide experimental validation.

Keywords: Audio amplifier, multi-level switching amplifier, power efficiency, pulse width modulation, PWM, self-oscillating amplifier.

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Authors: Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja, Minkyu Je

Abstract:

In this paper, the design of wide-swing constant transconductance (g_m) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (G_m) generated by the constant g_m bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in G_m with process, temperature and supply voltage (PVT).  Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the g_m variation is eventually concluded at between -3 % to 7 %. With the slight variation in the g_m value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S₂₁) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant g_m circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process. 

Keywords: Transconductance, LNA, temperature, process.

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Authors: M. H. Al-Mansoori, W. S. Al-Ghaithi, F. N. Hasoon

Abstract:

In this paper, we experimentally investigate the performance of an efficient high gain triple-pass L-band Erbium-Doped Fiber (EDF) amplifier structure with a single pump source. The amplifier gain and noise figure variation with EDF pump power, input signal power and wavelengths have been investigated. The generated backward Amplified Spontaneous Emission (ASE) noise of the first amplifier stage is suppressed by using a tunable band-pass filter. The amplifier achieves a signal gain of 55 dB with low noise figure of 3.8 dB at -50 dBm input signal power. The amplifier gain shows significant improvement of 12.8 dB compared to amplifier structure without ASE suppression.

Keywords: Optical amplifiers, EDFA, L-band, optical networks.

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Authors: C. Ketviriyakit, W. Kongnun, C. Chanapromma, P. Silapan

Abstract:

This article proposes a voltage-mode multifunction filter using differential voltage current controllable current conveyor transconductance amplifier (DV-CCCCTA). The features of the circuit are that: the quality factor and pole frequency can be tuned independently via the values of capacitors: the circuit description is very simple, consisting of merely 1 DV-CCCCTA, and 2 capacitors. Without any component matching conditions, the proposed circuit is very appropriate to further develop into an integrated circuit. Additionally, each function response can be selected by suitably selecting input signals with digital method. The PSpice simulation results are depicted. The given results agree well with the theoretical anticipation.

Keywords: DV-CCCCTA, Voltage-mode, Multifunction filter

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Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Abstract:

A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: High gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra Series.

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Authors: Wang Xing-hua, Zhong Shun-an, Zhang Zhuo

Abstract:

A kind of behavior model for discrete sampling and hold amplifier with charge transmission is analyzed. The transfer function and behavior features are based on the main AC responses of operation amplifier. The result used in pipelined and sigma-delta ADC shows the exact of model of sampling and hold amplifier, and the non-ideal factors are taken into account.

Keywords: SHA, response, behavior, transfer function.

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Authors: Parekhan M. Jaff

Abstract:

This paper describes the gain and noise performances of discrete Raman amplifier as a function of fiber lengths and the signal input powers for different pump configurations. Simulation has been done by using optisystem 7.0 software simulation at signal wavelength of 1550 nm and a pump wavelength of 1450nm. The results showed that the gain is higher in bidirectional pumping than in counter pumping, the gain changes with increasing the fiber length while the noise figure remain the same for short fiber lengths and the gain saturates differently for different pumping configuration at different fiber lengths and power levels of the signal.

Keywords: Optical Amplifier, Raman Amplifier DiscreteRaman Amplifier (DRA), Wavelength Division Multiplexing(WDM).

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Authors: Saad Mutashar, M. A. Hannan, S. A. Samad, A. Hussain

Abstract:

This paper deals with the modified wireless power transmission system for biomedical implanted devices. The system consists of efficient class-E power amplifier and inductive power links based on spiral circular transmitter and receiver coils. The model of the class-E power amplifier operated with 13.56 MHz is designed, discussed and analyzed in which it is achieved 87.2% of efficiency. The inductive coupling method is used to achieve link efficiency up to 73% depending on the electronic remote system resistance. The improved system powered with 3.3 DC supply and the voltage across the transmitter side is 40 V whereas, cross the receiver side is 12 V which is rectified to meet the implanted micro-system circuit requirements. The system designed and simulated by NI MULTISIM 11.02.

Keywords: Wireless Transmission, inductive coupling, implanted devices, class-E power amplifier, coils design.

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Authors: Hassan Jassim Motlak

Abstract:

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to the symmetrical input stage. P-Spice simulation results are obtained using 0.18μm MIETEC CMOS process parameters and supply voltage of ±1.2V, 50μA biasing current. The p-spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, openloop gain bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/μS, THD of -63dB and DC consumption power (PC) of 2mW.

Keywords: Pseudo-OTA used CMOS CFOA, low power CFOA, high-performance CFOA, novel CFOA.

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Authors: Houda Bdiri Gabbouj, Néjib Hassen, Kamel Besbes

Abstract:

This paper presents a low-voltage low-power differential linear transconductor with near rail-to-rail input swing. Based on the current-mirror OTA topology, the proposed transconductor combines the Flipped Voltage Follower (FVF) technique to linearize the transconductor behavior that leads to class- AB linear operation and the virtual transistor technique to lower the effective threshold voltages of the transistors which offers an advantage in terms of low supply requirement. Design of the OTA has been discussed. It operates at supply voltages of about ±0.8V. Simulation results for 0.18μm TSMC CMOS technology show a good input range of 1Vpp with a high DC gain of 81.53dB and a total harmonic distortion of -40dB at 1MHz for an input of 1Vpp. The main aim of this paper is to present and compare new OTA design with high transconductance, which has a potential to be used in low voltage applications.

Keywords: Amplifier class AB, current mirror, flipped voltage follower, low voltage.

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Authors: Yeon-kug Moon, Kang-Yoon Lee, Yun-Jae Won, Seung-Ok Lim

Abstract:

This paper describes a low-voltage and low-power channel selection analog front end with continuous-time low pass filters and highly linear programmable gain amplifier (PGA). The filters were realized as balanced Gm-C biquadratic filters to achieve a low current consumption. High linearity and a constant wide bandwidth are achieved by using a new transconductance (Gm) cell. The PGA has a voltage gain varying from 0 to 65dB, while maintaining a constant bandwidth. A filter tuning circuit that requires an accurate time base but no external components is presented. With a 1-Vrms differential input and output, the filter achieves -85dB THD and a 78dB signal-to-noise ratio. Both the filter and PGA were implemented in a 0.18um 1P6M n-well CMOS process. They consume 3.2mW from a 1.8V power supply and occupy an area of 0.19mm2.

Keywords: component ; Channel selection filters, DC offset, programmable gain amplifier, tuning circuit

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Authors: Makesh Iyer, T. Shanmuganantham

Abstract:

This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration technique which is one of the techniques to improve the stability of the potentially unstable device and make it unconditionally stable. Also, different substrates are used for designing the LNA to identify the suitable substrate that gives optimum results. It is observed that the noise immunity is more in Low Noise Amplifier (LNA) designed using RT Duroid 5880 substrate. This design resulted in noise figure of 0.859 dB and power gain of 15.530 dB. The comparative analysis of the LNA design is discussed in this paper.

Keywords: Low noise amplifier, substrate, distributed components, gain, noise figure.

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Authors: Alpana Agarwal, Akhil Sharma

Abstract:

This work presents a fully differential CMOS amplifier consisting of two self-biased gain boosted inverter stages, that provides an alternative to the power hungry operational amplifier. The self-biasing avoids the use of external biasing circuitry, thus reduces the die area, design efforts, and power consumption. In the present work, regulated cascode technique has been employed for gain boosting. The Miller compensation is also applied to enhance the phase margin. The circuit has been designed and simulated in 1.8 V 0.18 µm CMOS technology. The simulation results show a high DC gain of 100.7 dB, Unity-Gain Bandwidth of 107.8 MHz, and Phase Margin of 66.7^o with a power dissipation of 286 μW and makes it suitable candidate for the high resolution pipelined ADCs.

Keywords: CMOS amplifier, gain boosting, inverter-based amplifier, self-biased inverter.

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