%0 Journal Article
	%A Hasan Çiçekli and  Ahmet Gökçen and  Uğur Çam
	%D 2015
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 106, 2015
	%T Comparative Performance Analysis of Nonlinearity Cancellation Techniques for MOS-C Realization in Integrator Circuits
	%U https://publications.waset.org/pdf/10002780
	%V 106
	%X In this paper, a comparative performance analysis of
mostly used four nonlinearity cancellation techniques used to realize
the passive resistor by MOS transistors, is presented. The comparison
is done by using an integrator circuit which is employing sequentially
Op-amp, OTRA and ICCII as active element. All of the circuits are
implemented by MOS-C realization and simulated by PSPICE
program using 0.35μm process TSMC MOSIS model parameters.
With MOS-C realization, the circuits became electronically tunable
and fully integrable which is very important in IC design. The output
waveforms, frequency responses, THD analysis results and features
of the nonlinearity cancellation techniques are also given.
	%P 1207 - 1214