@article{(Open Science Index):https://publications.waset.org/pdf/10806,
	  title     = {Comprehensive Nonlinearity Simulation of Different Types and Modes of HEMTs with Respect to Biasing Conditions},
	  author    = {M. M. Karkhanehchi and  A. Ammani},
	  country	= {},
	  institution	= {},
	  abstract     = {A simple analytical model has been developed to
optimize biasing conditions for obtaining maximum linearity among
lattice-matched, pseudomorphic and metamorphic HEMT types as
well as enhancement and depletion HEMT modes. A nonlinear
current-voltage model has been simulated based on extracted data to
study and select the most appropriate type and mode of HEMT in
terms of a given gate-source biasing voltage within the device so as
to employ the circuit for the highest possible output current or
voltage linear swing. Simulation results can be used as a basis for the
selection of optimum gate-source biasing voltage for a given type
and mode of HEMT with regard to a circuit design. The
consequences can also be a criterion for choosing the optimum type
or mode of HEMT for a predetermined biasing condition.},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {4},
	  number    = {8},
	  year      = {2010},
	  pages     = {1156 - 1161},
	  ee        = {https://publications.waset.org/pdf/10806},
	  url   	= {https://publications.waset.org/vol/44},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 44, 2010},
	}