Search results for: Transistor laser
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 389

Search results for: Transistor laser

179 Alignment of Emission Gamma Ray Sources with Nai(Ti) Scintillation Detectors by Two Laser Beams to Pre-Operation using Alternating Minimization Technique

Authors: Abbas Ali Mahmood Karwi

Abstract:

Accurate timing alignment and stability is important to maximize the true counts and minimize the random counts in positron emission tomography So signals output from detectors must be centering with the two isotopes to pre-operation and fed signals into four units of pulse-processing units, each unit can accept up to eight inputs. The dual source computed tomography consist two units on the left for 15 detector signals of Cs-137 isotope and two units on the right are for 15 detectors signals of Co-60 isotope. The gamma spectrum consisting of either single or multiple photo peaks. This allows for the use of energy discrimination electronic hardware associated with the data acquisition system to acquire photon counts data with a specific energy, even if poor energy resolution detectors are used. This also helps to avoid counting of the Compton scatter counts especially if a single discrete gamma photo peak is emitted by the source as in the case of Cs-137. In this study the polyenergetic version of the alternating minimization algorithm is applied to the dual energy gamma computed tomography problem.

Keywords: Alignment, Spectrum, Laser, Detectors, Image

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178 Influence of Build Orientation on Machinability of Selective Laser Melted Titanium Alloy-Ti-6Al-4V

Authors: Manikandakumar Shunmugavel, Ashwin Polishetty, Moshe Goldberg, Junior Nomani, Guy Littlefair

Abstract:

Selective laser melting (SLM), a promising additive manufacturing (AM) technology, has a huge potential in the fabrication of Ti-6Al-4V near-net shape components. However, poor surface finish of the components fabricated from this technology requires secondary machining to achieve the desired accuracy and tolerance. Therefore, a systematic understanding of the machinability of SLM fabricated Ti-6Al-4V components is paramount to improve the productivity and product quality. Considering the significance of machining in SLM fabricated Ti-6Al-4V components, this research aim is to study the influence of build orientation on machinability characteristics by performing low speed orthogonal cutting tests. In addition, the machinability of SLM fabricated Ti-6Al-4V is compared with conventionally produced wrought Ti-6Al-4V to understand the influence of SLM technology on machining. This paper is an attempt to provide evidence to the hypothesis associated that build orientation influences cutting forces, chip formation and surface integrity during orthogonal cutting of SLM Ti-6Al-4V samples. Results obtained from the low speed orthogonal cutting tests highlight the practical importance of microstructure and build orientation on machinability of SLM Ti-6Al-4V.

Keywords: Additive manufacturing, build orientation, machinability, titanium alloys (Ti-6Al-4V).

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177 Study of Unsteady Swirling Flow in a Hydrodynamic Vortex Chamber

Authors: Sergey I. Shtork, Aleksey P. Vinokurov, Sergey V. Alekseenko

Abstract:

The paper reports on the results of experimental and numerical study of nonstationary swirling flow in an isothermal model of vortex burner. It has been identified that main source of the instability is related to a precessing vortex core (PVC) phenomenon. The PVC induced flow pulsation characteristics such as precession frequency and its variation as a function of flowrate and swirl number have been explored making use of acoustic probes. Additionally pressure transducers were used to measure the pressure drops on the working chamber and across the vortex flow. The experiments have been included also the mean velocity measurements making use of a laser-Doppler anemometry. The features of instantaneous flowfield generated by the PVC were analyzed employing a commercial CFD code (Star-CCM+) based on Detached Eddy Simulation (DES) approach. Validity of the numerical code has been checked by comparison calculated flowfield data with the obtained experimental results. It has been confirmed particularly that the CFD code applied correctly reproduces the flow features.

Keywords: Acoustic probes, detached eddy simulation (DES), laser-Doppler anemometry (LDA), precessing vortex core (PVC).

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176 Optical 3D-Surface Reconstruction of Weak Textured Objects Based on an Approach of Disparity Stereo Inspection

Authors: Thomas Kerstein, Martin Laurowski, Philipp Klein, Michael Weyrich, Hubert Roth, Jürgen Wahrburg

Abstract:

Optical 3D measurement of objects is meaningful in numerous industrial applications. In various cases shape acquisition of weak textured objects is essential. Examples are repetition parts made of plastic or ceramic such as housing parts or ceramic bottles as well as agricultural products like tubers. These parts are often conveyed in a wobbling way during the automated optical inspection. Thus, conventional 3D shape acquisition methods like laser scanning might fail. In this paper, a novel approach for acquiring 3D shape of weak textured and moving objects is presented. To facilitate such measurements an active stereo vision system with structured light is proposed. The system consists of multiple camera pairs and auxiliary laser pattern generators. It performs the shape acquisition within one shot and is beneficial for rapid inspection tasks. An experimental setup including hardware and software has been developed and implemented.

Keywords: automated optical inspection, depth from structured light, stereo vision, surface reconstruction

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175 Design of Low Noise Amplifiers for 10 GHz Application

Authors: Makesh Iyer, T. Shanmuganantham

Abstract:

This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration technique which is one of the techniques to improve the stability of the potentially unstable device and make it unconditionally stable. Also, different substrates are used for designing the LNA to identify the suitable substrate that gives optimum results. It is observed that the noise immunity is more in Low Noise Amplifier (LNA) designed using RT Duroid 5880 substrate. This design resulted in noise figure of 0.859 dB and power gain of 15.530 dB. The comparative analysis of the LNA design is discussed in this paper.

Keywords: Low noise amplifier, substrate, distributed components, gain, noise figure.

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174 Perturbation Based Modelling of Differential Amplifier Circuit

Authors: Rahul Bansal, Sudipta Majumdar

Abstract:

This paper presents the closed form nonlinear expressions of bipolar junction transistor (BJT) differential amplifier (DA) using perturbation method. Circuit equations have been derived using Kirchhoff’s voltage law (KVL) and Kirchhoff’s current law (KCL). The perturbation method has been applied to state variables for obtaining the linear and nonlinear terms. The implementation of the proposed method is simple. The closed form nonlinear expressions provide better insights of physical systems. The derived equations can be used for signal processing applications.

Keywords: Differential amplifier, perturbation method, Taylor series.

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173 Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications

Authors: Anwar H. Jarndal, Ahmed S. Elwakil

Abstract:

In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.

Keywords: Fractional-order modeling, GaN HEMT, Si-substrate, open de-embedding structure.

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172 Microstructure and Corrosion Behavior of Laser Welded Magnesium Alloys with Silver Nanoparticles

Authors: M. Ishak, K. Yamasaki, K. Maekawa

Abstract:

Magnesium alloys have gained increased attention in recent years in automotive, electronics, and medical industry. This because of magnesium alloys have better properties than aluminum alloys and steels in respects of their low density and high strength to weight ratio. However, the main problems of magnesium alloy welding are the crack formation and the appearance of porosity during the solidification. This paper proposes a unique technique to weld two thin sheets of AZ31B magnesium alloy using a paste containing Ag nanoparticles. The paste containing Ag nanoparticles of 5 nm in average diameter and an organic solvent was used to coat the surface of AZ31B thin sheet. The coated sheet was heated at 100 °C for 60 s to evaporate the solvent. The dried sheet was set as a lower AZ31B sheet on the jig, and then lap fillet welding was carried out by using a pulsed Nd:YAG laser in a closed box filled with argon gas. The characteristics of the microstructure and the corrosion behavior of the joints were analyzed by opticalmicroscopy (OM), energy dispersive spectrometry (EDS), electron probe micro-analyzer (EPMA), scanning electron microscopy (SEM), and immersion corrosion test. The experimental results show that the wrought AZ31B magnesium alloy can be joined successfully using Ag nanoparticles. Ag nanoparticles insert promote grain refinement, narrower the HAZ width and wider bond width compared to weld without and insert. Corrosion rate of welded AZ31B with Ag nanoparticles reduced up to 44 % compared to base metal. The improvement of corrosion resistance of welded AZ31B with Ag nanoparticles due to finer grains and large grain boundaries area which consist of high Al content. β-phase Mg17Al12 could serve as effective barrier and suppressed further propagation of corrosion. Furthermore, Ag distribution in fusion zone provide much more finer grains and may stabilize the magnesium solid solution making it less soluble or less anodic in aqueous

Keywords: Laser welding, magnesium alloys, nanoparticles, mechanical property

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171 Effect of Field Dielectric Material on Performance of InGaAs Power LDMOSFET

Authors: Yashvir Singh, Swati Chamoli

Abstract:

In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.

Keywords: InGaAs, dielectric, lateral, power MOSFET.

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170 Fiber-Reinforced Sandwich Structures Based on Selective Laser Sintering: A Technological View

Authors: T. Häfele, J. Kaspar, M. Vielhaber, W. Calles, J. Griebsch

Abstract:

The demand for an increasing diversification of the product spectrum associated with the current huge customization desire and subsequently the decreasing unit quantities of each production lot is gaining more and more importance within a great variety of industrial branches, e.g. automotive industry. Nevertheless, traditional product development and production processes (molding, extrusion) are already reaching their limits or fail to address these trends of a flexible and digitized production in view of a product variability up to lot size one. Thus, upcoming innovative production concepts like the additive manufacturing technology basically create new opportunities with regard to extensive potentials in product development (constructive optimization) and manufacturing (economic individualization), but mostly suffer from insufficient strength regarding structural components. Therefore, this contribution presents an innovative technological and procedural conception of a hybrid additive manufacturing process (fiber-reinforced sandwich structures based on selective laser sintering technology) to overcome these current structural weaknesses, and consequently support the design of complex lightweight components.

Keywords: Additive manufacturing, fiber-reinforced plastics, hybrid design, lightweight design.

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169 Hardware Description Language Design of Σ-Δ Fractional-N Phase-Locked Loop for Wireless Applications

Authors: Ahmed El Oualkadi, Abdellah Ait Ouahman

Abstract:

This paper discusses a systematic design of a Σ-Δ fractional-N Phase-Locked Loop based on HDL behavioral modeling. The proposed design consists in describing the mixed behavior of this PLL architecture starting from the specifications of each building block. The HDL models of critical PLL blocks have been described in VHDL-AMS to predict the different specifications of the PLL. The effect of different noise sources has been efficiently introduced to study the PLL system performances. The obtained results are compared with transistor-level simulations to validate the effectiveness of the proposed models for wireless applications in the frequency range around 2.45 GHz.

Keywords: Phase-locked loop, frequency synthesizer, fractional-N PLL, Σ-Δ modulator, HDL models

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168 Bias Stability of a-IGZO TFT and a new Shift-Register Design Suitable for a-IGZO TFT

Authors: Young Wook Lee, Sun-Jae Kim, Soo-Yeon Lee, Moon-Kyu Song, Woo-Geun Lee Min-Koo Han

Abstract:

We have fabricated a-IGZO TFT and investigated the stability under positive DC and AC bias stress. The threshold voltage of a-IGZO TFT shifts positively under those biases, and that reduces on-current. For this reason, conventional shift-register circuit employing TFTs which stressed by positive bias will be unstable, may do not work properly. We have designed a new 6-transistor shift-register, which has less transistors than prior circuits. The TFTs of the proposed shift-register are not suffering from positive DC or AC stress, mainly kept unbiased. Despite the compact design, the stable output signal was verified through the SPICE simulation even under RC delay of clock signal.

Keywords: Indium Gallium Zinc Oxide (IGZO), Thin FilmTransistor (TFT), shift-register

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167 Prediction of Watermelon Consumer Acceptability based on Vibration Response Spectrum

Authors: R.Abbaszadeh, A.Rajabipour, M.Delshad, M.J.Mahjub, H.Ahmadi

Abstract:

It is difficult to judge ripeness by outward characteristics such as size or external color. In this paper a nondestructive method was studied to determine watermelon (Crimson Sweet) quality. Responses of samples to excitation vibrations were detected using laser Doppler vibrometry (LDV) technology. Phase shift between input and output vibrations were extracted overall frequency range. First and second were derived using frequency response spectrums. After nondestructive tests, watermelons were sensory evaluated. So the samples were graded in a range of ripeness based on overall acceptability (total desired traits consumers). Regression models were developed to predict quality using obtained results and sample mass. The determination coefficients of the calibration and cross validation models were 0.89 and 0.71 respectively. This study demonstrated feasibility of information which is derived vibration response curves for predicting fruit quality. The vibration response of watermelon using the LDV method is measured without direct contact; it is accurate and timely, which could result in significant advantage for classifying watermelons based on consumer opinions.

Keywords: Laser Doppler vibrometry, Phase shift, Overallacceptability, Regression model , Resonance frequency, Watermelon

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166 Geometric Modeling of Illumination on the TFT-LCD Panel using Bezier Surface

Authors: Kyong-min Lee, Moon Soo Chang, PooGyeon Park

Abstract:

In this paper, we propose a geometric modeling of illumination on the patterned image containing etching transistor. This image is captured by a commercial camera during the inspection of a TFT-LCD panel. Inspection of defect is an important process in the production of LCD panel, but the regional difference in brightness, which has a negative effect on the inspection, is due to the uneven illumination environment. In order to solve this problem, we present a geometric modeling of illumination consisting of an interpolation using the least squares method and 3D modeling using bezier surface. Our computational time, by using the sampling method, is shorter than the previous methods. Moreover, it can be further used to correct brightness in every patterned image.

Keywords: Bezier, defect, geometric modeling, illumination, inspection, LCD, panel.

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165 LFSR Counter Implementation in CMOS VLSI

Authors: Doshi N. A., Dhobale S. B., Kakade S. R.

Abstract:

As chip manufacturing technology is suddenly on the threshold of major evaluation, which shrinks chip in size and performance, LFSR (Linear Feedback Shift Register) is implemented in layout level which develops the low power consumption chip, using recent CMOS, sub-micrometer layout tools. Thus LFSR counter can be a new trend setter in cryptography and is also beneficial as compared to GRAY & BINARY counter and variety of other applications. This paper compares 3 architectures in terms of the hardware implementation, CMOS layout and power consumption, using Microwind CMOS layout tool. Thus it provides solution to a low power architecture implementation of LFSR in CMOS VLSI.

Keywords: Chip technology, Layout level, LFSR, Pass transistor

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164 Design and Realization of an Electronic Load for a PEM Fuel Cell

Authors: Arafet Bouaicha, Hatem Allegui, Amar Rouane, El-Hassane Aglzim, Abdelkader Mami

Abstract:

In order to further understand the behavior of PEM fuel cell and optimize their performance, it is necessary to perform measurements in real time. The internal impedance measurement by electrochemical impedance spectroscopy (EIS) is of great importance. In this work, we present the impedance measurement method of a PEM fuel cell by electrochemical impedance spectroscopy method and the realization steps of electronic load for this measuring technique implementation. The theoretical results are obtained from the simulation of software PSPICE® and experimental tests are carried out using the Ballard Nexa™ PEM fuel cell system.

Keywords: Electronic load, MOS transistor, PEM fuel cell, Impedance measurement, Electrochemical Impedance Spectroscopy (EIS).

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163 Nonlinear Absorption and Scattering in Wide Band Gap Silver Sulfide Nanoparticles Colloid and Their Effects on the Optical Limiting

Authors: Hoda Aleali, Nastaran Mansour, Maryam Mirzaie

Abstract:

In this paper, we study the optical nonlinearities of Silver sulfide (Ag2S) nanostructures dispersed in the Dimethyl sulfoxide (DMSO) under exposure to 532 nm, 15 nanosecond (ns) pulsed laser irradiation. Ultraviolet–visible absorption spectrometry (UV-Vis), X-ray diffraction (XRD), and transmission electron microscopy (TEM) are used to characterize the obtained nanocrystal samples. The band gap energy of colloid is determined by analyzing the UV–Vis absorption spectra of the Ag2S NPs using the band theory of semiconductors. Z-scan technique is used to characterize the optical nonlinear properties of the Ag2S nanoparticles (NPs). Large enhancement of two photon absorption effect is observed with increase in concentration of the Ag2S nanoparticles using open Zscan measurements in the ns laser regime. The values of the nonlinear absorption coefficients are determined based on the local nonlinear responses including two photon absorption. The observed aperture dependence of the Ag2S NP limiting performance indicates that the nonlinear scattering plays an important role in the limiting action of the sample. The concentration dependence of the optical liming is also investigated. Our results demonstrate that the optical limiting threshold decreases with increasing the silver sulfide NPs in DMSO.

Keywords: Nanoscale materials, Silver sulfide nanoparticles, Nonlinear absorption, Nonlinear scattering, Optical limiting.

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162 Channel Length Modulation Effect on Monolayer Graphene Nanoribbon Field Effect Transistor

Authors: Mehdi Saeidmanesh, Razali Ismail

Abstract:

Recently, Graphene Nanoribbon Field Effect Transistors (GNR FETs) attract a great deal of attention due to their better performance in comparison with conventional devices. In this paper, channel length Modulation (CLM) effect on the electrical characteristics of GNR FETs is analytically studied and modeled. To this end, the special distribution of the electric potential along the channel and current-voltage characteristic of the device is modeled. The obtained results of analytical model are compared to the experimental data of published works. As a result, it is observable that considering the effect of CLM, the current-voltage response of GNR FET is more realistic.

Keywords: Graphene nanoribbon, field effect transistors, short channel effects, channel length modulation.

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161 Parameters Extraction for Pseudomorphic HEMTs Using Genetic Algorithms

Authors: Mazhar B. Tayel, Amr H. Yassin

Abstract:

A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.

Keywords: PHEMT, Genetic Algorithms, small signal modeling, optimization.

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160 Optimization and Determination of Process Parameters in Thin Film SOI Photo-BJMOSFET

Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Guo-Liang Zhang, Tai-Hong Wang

Abstract:

We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

Keywords: Photo-to-dark-current contrast ratio, Photo-current, Dark-current, Process parameter

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159 Purity Monitor Studies in Medium Liquid Argon TPC

Authors: I. Badhrees

Abstract:

This paper is an attempt to describe some of the results that had been found through a journey of study in the field of particle physics. This study consists of two parts, one about the measurement of the cross section of the decay of the Z particle in two electrons, and the other deals with the measurement of the cross section of the multi-photon absorption process using a beam of Laser in the Liquid Argon Time Projection Chamber.

The first part of the paper concerns the results based on the analysis of a data sample containing 8120 ee candidates to reconstruct the mass of the Z particle for each event where each event has an ee pair with PT(e) > 20GeV, and η(e) < 2.5. Monte Carlo templates of the reconstructed Z particle were produced as a function of the Z mass scale. The distribution of the reconstructed Z mass in the data was compared to the Monte Carlo templates, where the total cross section is calculated to be equal to 1432pb.

The second part concerns the Liquid Argon Time Projection Chamber, LAr TPC, the results of the interaction of the UV Laser, Nd-YAG with λ= 266mm, with LAr and through the study of the multi-photon ionization process as a part of the R&D at Bern University. The main result of this study was the cross section of the process of the multi-photon ionization process of the LAr, σe = 1.24±0.10stat±0.30sys.10 -56cm4.

Keywords: ATLAS, CERN, KACST, LArTPC, Particle Physics.

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158 The Estimation Method of Stress Distribution for Beam Structures Using the Terrestrial Laser Scanning

Authors: Sang Wook Park, Jun Su Park, Byung Kwan Oh, Yousok Kim, Hyo Seon Park

Abstract:

This study suggests the estimation method of stress distribution for the beam structures based on TLS (Terrestrial Laser Scanning). The main components of method are the creation of the lattices of raw data from TLS to satisfy the suitable condition and application of CSSI (Cubic Smoothing Spline Interpolation) for estimating stress distribution. Estimation of stress distribution for the structural member or the whole structure is one of the important factors for safety evaluation of the structure. Existing sensors which include ESG (Electric strain gauge) and LVDT (Linear Variable Differential Transformer) can be categorized as contact type sensor which should be installed on the structural members and also there are various limitations such as the need of separate space where the network cables are installed and the difficulty of access for sensor installation in real buildings. To overcome these problems inherent in the contact type sensors, TLS system of LiDAR (light detection and ranging), which can measure the displacement of a target in a long range without the influence of surrounding environment and also get the whole shape of the structure, has been applied to the field of structural health monitoring. The important characteristic of TLS measuring is a formation of point clouds which has many points including the local coordinate. Point clouds are not linear distribution but dispersed shape. Thus, to analyze point clouds, the interpolation is needed vitally. Through formation of averaged lattices and CSSI for the raw data, the method which can estimate the displacement of simple beam was developed. Also, the developed method can be extended to calculate the strain and finally applicable to estimate a stress distribution of a structural member. To verify the validity of the method, the loading test on a simple beam was conducted and TLS measured it. Through a comparison of the estimated stress and reference stress, the validity of the method is confirmed.

Keywords: Structural health monitoring, terrestrial laser scanning, estimation of stress distribution, coordinate transformation, cubic smoothing spline interpolation.

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157 Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)

Authors: W. Z. Wang, S. Todd, S. B. Dolmanan, K. B. Lee, L. Yuan, H. F. Sun, S. L. Selvaraj, M.Krishnakumar, G. Q. Lo, S. Tripathy

Abstract:

The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.

Keywords: Raman, photo luminescence, AlGaN/GaN, HEMT.

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156 Design of Folded Cascode OTA in Different Regions of Operation through gm/ID Methodology

Authors: H. Daoud Dammak, S. Bensalem, S. Zouari, M. Loulou

Abstract:

This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor sizing. Using 0.35μm CMOS process, the designed folded cascode OTA achieves a DC gain of 77.5dB and a unity-gain frequency of 430MHz in strong inversion mode. In moderate inversion mode, it has a 92dB DC gain and provides a gain bandwidth product of around 69MHz. The OTA circuit has a DC gain of 75.5dB and unity-gain frequency limited to 19.14MHZ in weak inversion region.

Keywords: CMOS IC design, Folded Cascode OTA, gm/ID methodology, optimization.

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155 Laser Data Based Automatic Generation of Lane-Level Road Map for Intelligent Vehicles

Authors: Zehai Yu, Hui Zhu, Linglong Lin, Huawei Liang, Biao Yu, Weixin Huang

Abstract:

With the development of intelligent vehicle systems, a high-precision road map is increasingly needed in many aspects. The automatic lane lines extraction and modeling are the most essential steps for the generation of a precise lane-level road map. In this paper, an automatic lane-level road map generation system is proposed. To extract the road markings on the ground, the multi-region Otsu thresholding method is applied, which calculates the intensity value of laser data that maximizes the variance between background and road markings. The extracted road marking points are then projected to the raster image and clustered using a two-stage clustering algorithm. Lane lines are subsequently recognized from these clusters by the shape features of their minimum bounding rectangle. To ensure the storage efficiency of the map, the lane lines are approximated to cubic polynomial curves using a Bayesian estimation approach. The proposed lane-level road map generation system has been tested on urban and expressway conditions in Hefei, China. The experimental results on the datasets show that our method can achieve excellent extraction and clustering effect, and the fitted lines can reach a high position accuracy with an error of less than 10 cm.

Keywords: Curve fitting, lane-level road map, line recognition, multi-thresholding, two-stage clustering.

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154 The Light-Effect in Cylindrical Quantum Wire with an Infinite Potential for the Case of Electrons: Optical Phonon Scattering

Authors: Hoang Van Ngoc, Nguyen Vu Nhan, Nguyen Quang Bau

Abstract:

The light-effect in cylindrical quantum wire with an infinite potential for the case of electrons, optical phonon scattering, is studied based on the quantum kinetic equation. The density of the direct current in a cylindrical quantum wire by a linearly polarized electromagnetic wave, a DC electric field, and an intense laser field is calculated. Analytic expressions for the density of the direct current are studied as a function of the frequency of the laser radiation field, the frequency of the linearly polarized electromagnetic wave, the temperature of system, and the size of quantum wire. The density of the direct current in cylindrical quantum wire with an infinite potential for the case of electrons – optical phonon scattering is nonlinearly dependent on the frequency of the linearly polarized electromagnetic wave. The analytic expressions are numerically evaluated and plotted for a specific quantum wire, GaAs/GaAsAl.

Keywords: The light-effect, cylindrical quantum wire with an infinite potential, the density of the direct current, electrons - optical phonon scattering.

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153 Thermal Stability of a Vertical SOI-Based Capacitorless One-Transistor DRAM with Trench-Body Structure

Authors: Po-Hsieh Lin, Jyi-Tsong Lin

Abstract:

A vertical SOI-based MOSFET with trench body structure operated as 1T DRAM cell at various temperatures has been studied and investigated. Different operation temperatures are assigned for the device for its performance comparison, thus the thermal stability is carefully evaluated for the future memory device applications. Based on the simulation, the vertical SOI-based MOSFET with trench body structure demonstrates the electrical characteristics properly and possess conspicuous kink effect at various operation temperatures. Transient characteristics were also performed to prove that its programming window values and retention time behaviors are acceptable when the new 1T DRAM cell is operated at high operation temperature.

Keywords: SOI, 1T DRAM, thermal stability.

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152 High Level Characterization and Optimization of Switched-Current Sigma-Delta Modulators with VHDL-AMS

Authors: A. Fakhfakh, N. Ksentini, M. Loulou, N. Masmoudi, J. J. Charlot

Abstract:

Today, design requirements are extending more and more from electronic (analogue and digital) to multidiscipline design. These current needs imply implementation of methodologies to make the CAD product reliable in order to improve time to market, study costs, reusability and reliability of the design process. This paper proposes a high level design approach applied for the characterization and the optimization of Switched-Current Sigma- Delta Modulators. It uses the new hardware description language VHDL-AMS to help the designers to optimize the characteristics of the modulator at a high level with a considerably reduced CPU time before passing to a transistor level characterization.

Keywords: high level design, optimization, switched-Current Sigma-Delta Modulators, VHDL-AMS.

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151 Memristor: The Missing Circuit Element and its Application

Authors: Vishnu Pratap Singh Kirar

Abstract:

Memristor is also known as the fourth fundamental passive circuit element. When current flows in one direction through the device, the electrical resistance increases and when current flows in the opposite direction, the resistance decreases. When the current is stopped, the component retains the last resistance that it had, and when the flow of charge starts again, the resistance of the circuit will be what it was when it was last active. It behaves as a nonlinear resistor with memory. Recently memristors have generated wide research interest and have found many applications. In this paper we survey the various applications of memristors which include non volatile memory, nanoelectronic memories, computer logic, neuromorphic computer architectures low power remote sensing applications, crossbar latches as transistor replacements, analog computations and switches.

Keywords: Memristor, non-volatile memory, arithmatic operation, programmable resistor.

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150 A Comparative Study on the Dimensional Error of 3D CAD Model and SLS RP Model for Reconstruction of Cranial Defect

Authors: L. Siva Rama Krishna, Sriram Venkatesh, M. Sastish Kumar, M. Uma Maheswara Chary

Abstract:

Rapid Prototyping (RP) is a technology that produces models and prototype parts from 3D CAD model data, CT/MRI scan data, and model data created from 3D object digitizing systems. There are several RP process like Stereolithography (SLA), Solid Ground Curing (SGC), Selective Laser Sintering (SLS), Fused Deposition Modeling (FDM), 3D Printing (3DP) among them SLS and FDM RP processes are used to fabricate pattern of custom cranial implant. RP technology is useful in engineering and biomedical application. This is helpful in engineering for product design, tooling and manufacture etc. RP biomedical applications are design and development of medical devices, instruments, prosthetics and implantation; it is also helpful in planning complex surgical operation. The traditional approach limits the full appreciation of various bony structure movements and therefore the custom implants produced are difficult to measure the anatomy of parts and analyze the changes in facial appearances accurately. Cranioplasty surgery is a surgical correction of a defect in cranial bone by implanting a metal or plastic replacement to restore the missing part. This paper aims to do a comparative study on the dimensional error of CAD and SLS RP Models for reconstruction of cranial defect by comparing the virtual CAD with the physical RP model of a cranial defect.

Keywords: Rapid Prototyping, Selective Laser Sintering, Cranial defect, Dimensional Error.

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