Search results for: 1T DRAM

Authors: Venkataraman Krishnaswami, Venkatasubramanian Viswanathan

Abstract:

Scalability poses a severe threat to the existing DRAM technology. The capacitors that are used for storing and sensing charge in DRAM are generally not scaled beyond 42nm. This is because; the capacitors must be sufficiently large for reliable sensing and charge storage mechanism. This leaves DRAM memory scaling in jeopardy, as charge sensing and storage mechanisms become extremely difficult. In this paper we provide an overview of the potential and the possibilities of using Phase Change Memory (PCM) as an alternative for the existing DRAM technology. The main challenges that we encounter in using PCM are, the limited endurance, high access latencies, and higher dynamic energy consumption than that of the conventional DRAM. We then provide an overview of various methods, which can be employed to overcome these drawbacks. Hybrid memories involving both PCM and DRAM can be used, to achieve good tradeoffs in access latency and storage density. We conclude by presenting, the results of these methods that makes PCM a potential replacement for the current DRAM technology.

Keywords: DRAM, Phase Change Memory.

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Authors: Po-Hsieh Lin, Jyi-Tsong Lin

Abstract:

A vertical SOI-based MOSFET with trench body structure operated as 1T DRAM cell at various temperatures has been studied and investigated. Different operation temperatures are assigned for the device for its performance comparison, thus the thermal stability is carefully evaluated for the future memory device applications. Based on the simulation, the vertical SOI-based MOSFET with trench body structure demonstrates the electrical characteristics properly and possess conspicuous kink effect at various operation temperatures. Transient characteristics were also performed to prove that its programming window values and retention time behaviors are acceptable when the new 1T DRAM cell is operated at high operation temperature.

Keywords: SOI, 1T DRAM, thermal stability.

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Authors: Nawang Chhunid, Gagnesh Kumar

Abstract:

On-chip memories consume a significant portion of the overall die space and power in modern microprocessors. On-chip caches depend on Static Random-Access Memory (SRAM) cells and scaling of technology occurring as per Moore’s law. Unfortunately, the scaling is affecting stability, performance, and leakage power which will become major problems for future SRAMs in aggressive nanoscale technologies due to increasing device mismatch and variations. 3T1D Dynamic Random-Access Memory (DRAM) cell is a non-destructive read DRAM cell with three transistors and a gated diode. In 3T1D DRAM cell gated diode (D1) acts as a storage device and also as an amplifier, which leads to fast read access. Due to its high tolerance to process variation, high density, and low cost of memory as compared to 6T SRAM cell, it is universally used by the advanced microprocessor for on chip data and program memory. In the present paper, it has been shown that 3T1D DRAM cell can perform better in terms of fast read access as compared to 6T, 4T, 3T SRAM cells, respectively.

Keywords: DRAM cell, read access time, tanner EDA tool write access time and retention time, average power dissipation.

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Authors: Thomas Canhao Xu, Bo Yang, Alexander Wei Yin, Pasi Liljeberg, Hannu Tenhunen

Abstract:

With the increasing number of on-chip components and the critical requirement for processing power, Chip Multiprocessor (CMP) has gained wide acceptance in both academia and industry during the last decade. However, the conventional bus-based onchip communication schemes suffer from very high communication delay and low scalability in large scale systems. Network-on-Chip (NoC) has been proposed to solve the bottleneck of parallel onchip communications by applying different network topologies which separate the communication phase from the computation phase. Observing that the memory bandwidth of the communication between on-chip components and off-chip memory has become a critical problem even in NoC based systems, in this paper, we propose a novel 3D NoC with on-chip Dynamic Random Access Memory (DRAM) in which different layers are dedicated to different functionalities such as processors, cache or memory. Results show that, by using our proposed architecture, average link utilization has reduced by 10.25% for SPLASH-2 workloads. Our proposed design costs 1.12% less execution cycles than the traditional design on average.

Keywords: 3D integration, network-on-chip, memory-on-chip, DRAM, chip multiprocessor.

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Authors: Vasundara Patel K. S., Harsha N. Bhushan, Kiran G. Gadag, Nischal Prasad B. N., Mohmmed Haroon

Abstract:

The most widely used semiconductor memory types are the Dynamic Random Access Memory (DRAM) and Static Random Access memory (SRAM). Competition among memory manufacturers drives the need to decrease power consumption and reduce the probability of read failure. A technology that is relatively new and has not been explored is the FinFET technology. In this paper, a single cell Schmitt Trigger Based Static RAM using FinFET technology is proposed and analyzed. The accuracy of the result is validated by means of HSPICE simulations with 32nm FinFET technology and the results are then compared with 6T SRAM using the same technology.

Keywords: Schmitt trigger based SRAM, FinFET, and Static Noise Margin.

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Authors: Mohd Azman Abdul Latif, Erwan Basiron

Abstract:

A flaw or drift from expected operational performance in one component (NAND, PMIC, controller, DRAM, etc.) may affect the reliability of the entire Solid State Drive (SSD) system. Therefore, it is important to ensure the required quality of each individual component through qualification testing specified using standards or user requirements. Qualification testing is time-consuming and comes at a substantial cost for product manufacturers. A highly technical team, from all the eminent stakeholders is embarking on reliability prediction from beginning of new product development, identify critical to reliability parameters, perform full-blown characterization to embed margin into product reliability and establish control to ensure the product reliability is sustainable in the mass production. The paper will discuss a comprehensive development framework, comprehending SSD end to end from design to assembly, in-line inspection, in-line testing and will be able to predict and to validate the product reliability at the early stage of new product development. During the design stage, the SSD will go through intense reliability margin investigation with focus on assembly process attributes, process equipment control, in-process metrology and also comprehending forward looking product roadmap. Once these pillars are completed, the next step is to perform process characterization and build up reliability prediction modeling. Next, for the design validation process, the reliability prediction specifically solder joint simulator will be established. The SSD will be stratified into Non-Operating and Operating tests with focus on solder joint reliability and connectivity/component latent failures by prevention through design intervention and containment through Temperature Cycle Test (TCT). Some of the SSDs will be subjected to the physical solder joint analysis called Dye and Pry (DP) and Cross Section analysis. The result will be feedbacked to the simulation team for any corrective actions required to further improve the design. Once the SSD is validated and is proven working, it will be subjected to implementation of the monitor phase whereby Design for Assembly (DFA) rules will be updated. At this stage, the design change, process and equipment parameters are in control. Predictable product reliability at early product development will enable on-time sample qualification delivery to customer and will optimize product development validation, effective development resource and will avoid forced late investment to bandage the end-of-life product failures. Understanding the critical to reliability parameters earlier will allow focus on increasing the product margin that will increase customer confidence to product reliability.

Keywords: e2e reliability prediction, SSD, TCT, Solder Joint Reliability, NUDD, connectivity issues, qualifications, characterization and control.

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