Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)

Authors: W. Z. Wang, S. Todd, S. B. Dolmanan, K. B. Lee, L. Yuan, H. F. Sun, S. L. Selvaraj, M.Krishnakumar, G. Q. Lo, S. Tripathy

Abstract:

The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.

Keywords: Raman, photo luminescence, AlGaN/GaN, HEMT.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1331443

References:

[1] Y. Dora; A. Chakraborty, L. McCarthy, S. Keller, S. P. DenBaars, and U. K. Mishra, "High Breakdown Voltage Achieved on AlGaN/GaN HEMTs with Integrated Slant Field Plates", IEEE Electron Device Lett., vol. 27, pp. 713-715, 2006.
[2] Tanya Paskova and Keith R. Evans, "GaN Substrates-Progress, Status, and Prospects", IEEE J. Selected Topics in Quantum Electron., vol. 15, pp. 1041-1052, July/Aug. 2009.
[3] P. Chen, R. Zhang, Z. M. Zhao, D. J. Xi, B. Shen, Z. Z. Chen, Y. G. Zhou, S. Y. Xie, W. F. Lu, and Y. D. Zheng, "Growth of high quality GaN layers with AlN buffer on Si(111) substrates", J. Cryst. Growth, vol. 225, pp. 150-154, 2001.
[4] K. Cheng, M. Leys, S. Degroote, B. Van Daele, S. Boeykens, J. Derluyn, M. Germain, G. Van Tendeloo, J. Engelen, and G. Borghs, "Flat GaN Epitaxial Layers Grown on Si(111) by Metalorganic Vapor Phase Epitaxy Using Step-Graded AlGaN Intermediate Layers", J. Electron. Mater., vol. 35, pp. 592-598, 2006.
[5] A. Able, W. Wegscheider, K. Engl, and J. Zweck, "Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers", J. Cryst. Growth, vol. 276, pp. 415-418, 2005.
[6] E. Feltin, B. Beaumont, M. La├╝gt, P. de Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, and P. Gibart, " Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy", Appl. Phys. Lett., vol. 79, pp. 3230-3232, 2001.
[7] Eric Frayssinet, Yvon Cordier, H. P. David Schenk, and Alexis Bavard, "Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal organic vapor phase epitaxy", Phys. Status Solidi C, vol. 8, pp. 1479- 1482, 2011.
[8] A. Dadgar, T. Hempel, J. Bläsing, O. schulz, S. Fritze, J. Christen, and A. Krost, "Improving GaN-on-silicon properties for GaN device epitaxy", Phys. Status Solidi C, vol. 8, pp. 1503-1508, 2011.
[9] E. Feltin, B. Beaumont, P. Vennéguès, M. Vaille, and P. Gibart, "Epitaxial lateral overgrowth of GaN on Si (111)", J. Appl. Phys., vol. 93, pp. 182-185, Jan. 2003.
[10] R. F. Davis, T. Gehrke, K. J. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany, "Conventional and pendeoepitaxial growth of GaN(0001) thin films on Si(111) substrates", J. Cryst. Growth, vol. 231, pp. 335-341, 2001.
[11] S. Tripathy, S. J. Chua, P. Chen, and Z. L. Miao, "Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si(111)", J. Appl. Phys., vol. 92, pp. 3503-3510, Oct. 2002.
[12] M. Kuball, "Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control", Surf. Interface Anal., vol. 31, pp. 987- 999, 2001.
[13] M. Yoshikawa, J. Wagner, H. Obloh, M. Kunzer, and M. Maier, "Resonant Raman scattering from buried AlxGa1-xN (xÔëñ0.17) layers in (Al,Ga,In)N heterostructures", J. Appl. Phys., vol. 87, pp. 2853-2856, 2000.