@article{(Open Science Index):https://publications.waset.org/pdf/15792,
	  title     = {Thermal Stability of a Vertical SOI-Based Capacitorless One-Transistor DRAM with Trench-Body Structure},
	  author    = {Po-Hsieh Lin and  Jyi-Tsong Lin},
	  country	= {},
	  institution	= {},
	  abstract     = {A vertical SOI-based MOSFET with trench body
structure operated as 1T DRAM cell at various temperatures has been
studied and investigated. Different operation temperatures are
assigned for the device for its performance comparison, thus the
thermal stability is carefully evaluated for the future memory device
applications. Based on the simulation, the vertical SOI-based
MOSFET with trench body structure demonstrates the electrical
characteristics properly and possess conspicuous kink effect at
various operation temperatures. Transient characteristics were also
performed to prove that its programming window values and
retention time behaviors are acceptable when the new 1T DRAM cell
is operated at high operation temperature.},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {7},
	  number    = {6},
	  year      = {2013},
	  pages     = {623 - 626},
	  ee        = {https://publications.waset.org/pdf/15792},
	  url   	= {https://publications.waset.org/vol/78},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 78, 2013},
	}