%0 Journal Article
	%A Anwar H. Jarndal and  Ahmed S. Elwakil
	%D 2016
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 115, 2016
	%T Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications
	%U https://publications.waset.org/pdf/10004797
	%V 115
	%X In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.
	%P 853 - 857