@article{(Open Science Index):https://publications.waset.org/pdf/16955,
	  title     = {Effect of Field Dielectric Material on Performance of InGaAs Power LDMOSFET},
	  author    = {Yashvir Singh and  Swati Chamoli},
	  country	= {},
	  institution	= {},
	  abstract     = {In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.
},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {7},
	  number    = {8},
	  year      = {2013},
	  pages     = {1087 - 1090},
	  ee        = {https://publications.waset.org/pdf/16955},
	  url   	= {https://publications.waset.org/vol/80},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 80, 2013},
	}