@article{(Open Science Index):https://publications.waset.org/pdf/10004797,
	  title     = {Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications},
	  author    = {Anwar H. Jarndal and  Ahmed S. Elwakil},
	  country	= {},
	  institution	= {},
	  abstract     = {In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {10},
	  number    = {7},
	  year      = {2016},
	  pages     = {853 - 857},
	  ee        = {https://publications.waset.org/pdf/10004797},
	  url   	= {https://publications.waset.org/vol/115},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 115, 2016},
	}