Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 30127
Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications

Authors: Anwar H. Jarndal, Ahmed S. Elwakil

Abstract:

In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.

Keywords: Fractional-order modeling, GaN HEMT, Si-substrate, open de-embedding structure.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1125173

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 751

References:


[1] U.K. Mishra, L. Shen, T.E. Kazior, and Y.-F. Wu, GaN-basedRF power devices and amplifiers, Proc IEEE 96 (2008), 287–305.
[2] E. Chumbes, A. Schremer, J. Smart, Y. Wang, N. MacDonald,D. Hogue, J. Komiak, S. Lichwalla, R. Leoni, and J. Shealy,AlGaN/GaN high electron mobility transistors on Si(111) substrates, IEEE Trans Electron Dev 48 (2001), 420–426.
[3] Liu, L., and J. H. Edgar, "Substrates for Gallium Nitride Epitaxy," Materials Science and Engineering, Vol. R 37, 2002, pp. 61–127.
[4] Kaushik, J. K., V. R. Balakrishnan, B. S. Panwar, and R. Muralidharan, “On the Origin of Kink Effect in Current!Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors,” IEEE Trans., Vol. ED-60, 2013, pp. 3351–3357.
[5] J. C. Pedro and N. B. Carvalho, Intermodulation Distortion in Microwave and Wireless Circuits, Norwood, MA: Artech House, 2003.
[6] S. Manohar, A. Narayanan, A. Keerti, A. Pham, J. Brown, R.Borges, and K. Linthicum, Characteristics of microwavepower GaN HEMT’s on 4-inch Si wafers, in IEEE MTT-SInt Microwave Symp Dig 1 (2002), 449–452.
[7] RiadhEssaadali, A. Jarndal, Ammar Kouki and F. M. Ghannouchi, “Modeling of Extrinsic Parasitic Elements of Si Based GaN HEMTs Using Two Step De-Embedding Structures,” in the IEEE Wireless and Microwave Technology Conference, Cocoa Beach, Florida, USA, April 2015, pp. 1-4, (DOI: 10.1109/WAMICON.2015.7120399).
[8] A. S. Elwakil, "Fractional order circuits and systems: An emerging interdisciplinary research area," IEEE Circuits & Systems Magazine, vol. 10, no. 4, pp. 41-50, 2010.
[9] T. J. Freeborn, B. J. Maundy and A. S. Elwakil, "Extracting the parameters of the double-dispersion Cole bioimpedance model without direct impedance measurement," Medical & Biological Engineering & Computing, Springer, vol. 52, no. 9, pp. 749-758, 2014.
[10] T. J. Freeborn, A. S. Elwakil and B. J. Maundy, "Fractional-order models of supercapacitors, batteries and fuel cells: A survey," Materials for Renewable and Sustainable Energy, Springer, vol. 4, no. 3, pp. 1-7, 2015.
[11] A. Jarndal, A. Z. Markos, and G. Kompa, “Improved Modeling of GaN HEMT on Si Substrate for Design of RF Power Amplifiers,” IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 3, pp. 644 – 651, March 2011.
[12] A. Jarndal, “AlGaN/GaN HEMTs on SiC and Si Substrates: A Review from the Small-Signal-Modeling’s Perspective,” International Journal of RF and Microwave Computer Aided Engineering, vol. 24, no. 3, pp. 389–400, May 2014.
[13] A. Jarndal, Riadh Essaadali, and Ammar Kouki, “A Reliable Model Parameter Extraction Method Applied to AlGaN/GaN HEMTs,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. PP, no. 99, pp. 1-1, July 2015.