Design of Low Noise Amplifiers for 10 GHz Application
This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration technique which is one of the techniques to improve the stability of the potentially unstable device and make it unconditionally stable. Also, different substrates are used for designing the LNA to identify the suitable substrate that gives optimum results. It is observed that the noise immunity is more in Low Noise Amplifier (LNA) designed using RT Duroid 5880 substrate. This design resulted in noise figure of 0.859 dB and power gain of 15.530 dB. The comparative analysis of the LNA design is discussed in this paper.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1474849Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 523
 “FCC Online Table of Frequency Allocations,” Federal Communications Commission Office of Engineering and Technology Policy and Rules Division, pp. 47 – 48, 2017.
 Mohammad Fallahnejad, Yasaman Najmabadi, et al, “Design and Simulation of Low Noise Amplifier at 10 GHz By Using GaAs High Electron Mobility Transistor,” IOSR Journal of Electrical and Electronics Engineering, vol. 10, Issue 5, pp. 29-34, 2015.
 Nan Li, Weiwei Feng, and Xiuping Li, “A CMOS 3–12-GHz Ultra wideband Low Noise Amplifier by Dual-Resonance Network,” IEEE Microwave and Wireless Components Letters, vol. 27, no. 4, pp. 383 – 385, 2017.
 Xiaorong Zhao, Honghui Fan, et al, “Gm-boosted Flat Gain UWB Low Noise Amplifier with Noise Cancellation,” Chemical Engineering Transactions, vol. 46, pp. 145-150, 2015.
 Marco Vittori, Sergio Colangeli, Walter Ciccognani, et al, “High-performance X-band LNAs using a 0.25 µm GaN Technology,” Proceedings of 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), pp. 157 – 160, 2017.
 Jyh-Chyurn Guo, Ching-Shiang Lin, “Low Power UWB CMOS LNA Using Resistive Feedback and Current-Reused Techniques Under Forward Body Bias,” Proceedings of the 47th European Microwave Conference, pp. 584 – 587, 2017.
 Z. Zeinadini, Z. H. Firouzeh, et al, “Design and Fabrication of a 9–11 GHz Balanced Low Noise Amplifier Using HJFET,” Journal of Communication Engineering, vol. 3, No. 2, pp. 123 – 140, 2014
 Richard Chi - Hsi Li, “RF Circuit Design,”Wiley Series on Information &Communications Technologies, John Wiley & Sons, pp. 4 – 30, 2009.
 M.Lahsaini., et al., “Design of broadband low noise amplifier based on HEMT transistors in the X-band”,International Journal of Engineering and Technology, vol. 5, issue 1, pp. 468- 476, 2013.
 Makesh Iyer, T. Shanmuganantham, “Design of LNA for Weather RADAR,” International Journal of Advanced Research Trends in Engineering and Technology, vol. 4, issue. 22, pp. 48 – 53, 2017.
 Makesh Iyer, T. Shanmuganantham, “Inductive Source Degenerative LNA for RADAR Altimeters,” International Journal of Engineering and Technology (UAE), vol. 7, issue. 2.33, pp. 1010 – 1013, 2018.
 Makesh Iyer, T. Shanmuganantham, “Design of LNA for 802.16e,” Lecture Notes in Networks and Systems, Springer, vol. 46, pp. 823 – 838, 2018.
 M.H. Misran, M.A. Meor Said, et al, “Design of Low Noise Amplifier for WiMAX Application,” IOSR Journal of Electrical and Electronics Engineering, vol. 6, issue 1, pp. 87-96, 2013.