%0 Journal Article %A Yashvir Singh and Swati Chamoli %D 2013 %J International Journal of Electronics and Communication Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 80, 2013 %T Effect of Field Dielectric Material on Performance of InGaAs Power LDMOSFET %U https://publications.waset.org/pdf/16955 %V 80 %X In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch. %P 1087 - 1090