Search results for: dual-mode CMOS analog multiplier
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 323

Search results for: dual-mode CMOS analog multiplier

323 Versatile Dual-Mode Class-AB Four-Quadrant Analog Multiplier

Authors: Montree Kumngern, Kobchai Dejhan

Abstract:

Versatile dual-mode class-AB CMOS four-quadrant analog multiplier circuit is presented. The dual translinear loops and current mirrors are the basic building blocks in realization scheme. This technique provides; wide dynamic range, wide-bandwidth response and low power consumption. The major advantages of this approach are; its has single ended inputs; since its input is dual translinear loop operate in class-AB mode which make this multiplier configuration interesting for low-power applications; current multiplying, voltage multiplying, or current and voltage multiplying can be obtainable with balanced input. The simulation results of versatile analog multiplier demonstrate a linearity error of 1.2 %, a -3dB bandwidth of about 19MHz, a maximum power consumption of 0.46mW, and temperature compensated. Operation of versatile analog multiplier was also confirmed through an experiment using CMOS transistor array.

Keywords: Class-AB, dual-mode CMOS analog multiplier, CMOS analog integrated circuit, CMOS translinear integrated circuit.

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322 A Low Power High Frequency CMOS RF Four Quadrant Analog Mixer

Authors: M. Aleshams, A. Shahsavandi

Abstract:

This paper describes a CMOS four-quadrant multiplier intended for use in the front-end receiver by utilizing the square-law characteristic of the MOS transistor in the saturation region. The circuit is based on 0.35 um CMOS technology simulated using HSPICE software. The mixer has a third-order inter the power consumption is 271uW from a single 1.2V power supply. One of the features of the proposed design is using two MOS transistors limitation to reduce the supply voltage, which leads to reduce the power consumption. This technique provides a GHz bandwidth response and low power consumption.

Keywords: RF-Mixer, Multiplier, cut-off frequency, power consumption

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321 Temperature Sensor IC Design for Intracranial Monitoring Device

Authors: Wai Pan Chan, Minkyu Je

Abstract:

A precision CMOS chopping amplifier is adopted in this work to improve a CMOS temperature sensor high sensitive enough for intracranial temperature monitoring. An amplified temperature sensitivity of 18.8 ± 3*0.2 mV/oC is attained over the temperature range from 20 oC to 80 oC from a given 10 samples of the same wafer. The analog frontend design outputs the temperature dependent and the temperature independent signals which can be directly interfaced to a 10 bit ADC to accomplish an accurate temperature instrumentation system.

Keywords: Chopping, analog frontend, CMOS temperature sensor, traumatic brain injury (TBI), intracranial temperature monitoring.

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320 An 8-Bit, 100-MSPS Fully Dynamic SAR ADC for Ultra-High Speed Image Sensor

Authors: F. Rarbi, D. Dzahini, W. Uhring

Abstract:

In this paper, a dynamic and power efficient 8-bit and 100-MSPS Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) is presented. The circuit uses a non-differential capacitive Digital-to-Analog (DAC) architecture segmented by 2. The prototype is produced in a commercial 65-nm 1P7M CMOS technology with 1.2-V supply voltage. The size of the core ADC is 208.6 x 103.6 µm2. The post-layout noise simulation results feature a SNR of 46.9 dB at Nyquist frequency, which means an effective number of bit (ENOB) of 7.5-b. The total power consumption of this SAR ADC is only 1.55 mW at 100-MSPS. It achieves then a figure of merit of 85.6 fJ/step.

Keywords: CMOS analog to digital converter, dynamic comparator, image sensor application, successive approximation register.

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319 Design of a CMOS Differential Operational Transresistance Amplifier in 90 nm CMOS Technology

Authors: Hafiz Muhammad Obaid, Umais Tayyab, Shabbir Majeed Ch.

Abstract:

In this paper, a CMOS differential operational transresistance amplifier (OTRA) is presented. The amplifier is designed and implemented in a standard umc90-nm CMOS technology. The differential OTRA provides wider bandwidth at high gain. It also shows much better rise and fall time and exhibits a very good input current dynamic range of 50 to 50 μA. The OTRA can be used in many analog VLSI applications. The presented amplifier has high gain bandwidth product of 617.6 THz Ω. The total power dissipation of the presented amplifier is also very low and it is 0.21 mW.

Keywords: CMOS, differential, operational transresistance amplifier, OTRA, 90 nm, VLSI.

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318 Current Mode Logic Circuits for 10-bit 5GHz High Speed Digital to Analog Converter

Authors: Zhenguo Vincent Chia, Sheung Yan Simon Ng, Minkyu Je

Abstract:

This paper presents CMOS Current Mode Logic (CML) circuits for a high speed Digital to Analog Converter (DAC) using standard CMOS 65nm process. The CML circuits have the propagation delay advantage over its conventional CMOS counterparts due to smaller output voltage swing and tunable bias current. The CML circuits proposed in this paper can achieve a maximum propagation delay of only 9.3ps, which can satisfy the stringent requirement for the 5 GHz high speed DAC application. Another advantage for CML circuits is its dynamic symmetry characteristic resulting in a reduction of an additional inverter. Simulation results show that the proposed CML circuits can operate from 1.08V to 1.3V with temperature ranging from -40 to +120°C.

Keywords: Conventional, Current Mode Logic, DAC, Decoder

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317 A Unity Gain Fully-Differential 10bit and 40MSps Sample-And-Hold Amplifier in 0.18um CMOS

Authors: Sanaz Haddadian, Rahele Hedayati

Abstract:

A 10bit, 40 MSps, sample and hold, implemented in 0.18-μm CMOS technology with 3.3V supply, is presented for application in the front-end stage of an analog-to-digital converter. Topology selection, biasing, compensation and common mode feedback are discussed. Cascode technique has been used to increase the dc gain. The proposed opamp provides 149MHz unity-gain bandwidth (wu), 80 degree phase margin and a differential peak to peak output swing more than 2.5v. The circuit has 55db Total Harmonic Distortion (THD), using the improved fully differential two stage operational amplifier of 91.7dB gain. The power dissipation of the designed sample and hold is 4.7mw. The designed system demonstrates relatively suitable response in different process, temperature and supply corners (PVT corners).

Keywords: Analog Integrated Circuit Design, Sample & Hold Amplifier and CMOS Technology.

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316 Variable Input Range Continuous-time Switched Current Delta-sigma Analog Digital Converter for RFID CMOS Biosensor Applications

Authors: Boram Kim, Shigeyasu Uno, Kazuo Nakazato

Abstract:

Continuous-time delta-sigma analog digital converter (ADC) for radio frequency identification (RFID) complementary metal oxide semiconductor (CMOS) biosensor has been reported. This delta-sigma ADC is suitable for digital conversion of biosensor signal because of small process variation, and variable input range. As the input range of continuous-time switched current delta-sigma ADC (Dynamic range : 50 dB) can be limited by using current reference, amplification of biosensor signal is unnecessary. The input range is switched to wide input range mode or narrow input range mode by command of current reference. When the narrow input range mode, the input range becomes ± 0.8 V. The measured power consumption is 5 mW and chip area is 0.31 mm^2 using 1.2 um standard CMOS process. Additionally, automatic input range detecting system is proposed because of RFID biosensor applications.

Keywords: continuous time, delta sigma, A/D converter, RFID, biosensor, CMOS

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315 Data-driven ASIC for Multichannel Sensors

Authors: Eduard Atkin, Alexander Klyuev, Vitaly Shumikhin

Abstract:

An approach and its implementation in 0.18 m CMOS process of the multichannel ASIC for capacitive (up to 30 pF) sensors are described in the paper. The main design aim was to study an analog data-driven architecture. The design was done for an analog derandomizing function of the 128 to 16 structure. That means that the ASIC structure should provide a parallel front-end readout of 128 input analog sensor signals and after the corresponding fast commutation with appropriate arbitration logic their processing by means of 16 output chains, including analog-to-digital conversion. The principal feature of the ASIC is a low power consumption within 2 mW/channel (including a 9-bit 20Ms/s ADC) at a maximum average channel hit rate not less than 150 kHz.

Keywords: Data-driven architecture, derandomizer, multichannel sensor readout

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314 Analog Front End Low Noise Amplifier in 0.18-µm CMOS for Ultrasound Imaging Applications

Authors: Haridas Kuruveettil, Dongning Zhao, Cheong Jia Hao, Minkyu Je

Abstract:

We present the design of Analog front end (AFE) low noise pre-amplifier implemented in a high voltage 0.18-µm CMOS technology for  a three dimensional ultrasound  bio microscope (3D UBM) application. The fabricated chip has 4X16 pre-amplifiers implemented to interface   a 2-D array of    high frequency capacitive micro-machined ultrasound transducers (CMUT). Core AFE cell consists of a high-voltage pulser in the transmit path, and a low-noise transimpedance amplifier in the receive path. Proposed system offers a high image resolution by the use of high frequency CMUTs with associated high performance imaging electronics integrated together.  Performance requirements and the design methods of the high bandwidth transimpedance amplifier are described in the paper. A single cell of transimpedance (TIA) amplifier and the bias circuit occupies a silicon area of 250X380 µm2 and the full chip occupies a total silicon area of 10x6.8 mm².

Keywords: Ultrasound, analog front end, medical imaging, beam forming, biomicroscope, transimpedance gain.

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313 A 1.8 V RF CMOS Active Inductor with 0.18 um CMOS Technology

Authors: Siavash Heydarzadeh, Massoud Dousti

Abstract:

A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Inductors designed by integrated circuit occupy much smaller area, for this reason,attracted researchers attention for more than decade. In this design we used Advanced Designed System (ADS) for simulating cicuit.

Keywords: CMOS active inductor , 0.18um CMOS technology , ADS

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312 Low Power Digital System for Reconfigurable Neural Recording System

Authors: Peng Li, Jun Zhou, Xin Liu, Chee Keong Ho, Xiaodan Zou, Minkyu Je

Abstract:

A digital system is proposed for low power 100- channel neural recording system in this paper, which consists of 100 amplifiers, 100 analog-to-digital converters (ADC), digital controller and baseband, transceiver for data link and RF command link. The proposed system is designed in a 0.18 μm CMOS process and 65 nm CMOS process.

Keywords: multiplex, neural recording, synchronization, transceiver

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311 High Speed and Ultra Low-voltage CMOS NAND and NOR Domino Gates

Authors: Yngvar Berg, Omid Mirmotahari

Abstract:

In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented.

Keywords: Low-voltage, high-speed, NAND, NOR, CMOS.

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310 Optimized Multiplier Based upon 6-Input Luts and Vedic Mathematics

Authors: Zulhelmi Zakaria, Shuja A. Abbasi

Abstract:

A new approach has been used for optimized design of multipliers based upon the concepts of Vedic mathematics. The design has been targeted to state-of-the art field-programmable gate arrays (FPGAs). The multiplier generates partial products using Vedic mathematics method by employing basic 4x4 multipliers designed by exploiting 6-input LUTs and multiplexers in the same slices resulting in drastic reduction in area. The multiplier is realized on Xilinx FPGAs using devices Virtex-5 and Virtex-6.Carry Chain Adder was employed to obtain final products. The performance of the proposed multiplier was examined and compared to well-known multipliers such as Booth, Carry Save, Carry ripple, and array multipliers. It is demonstrated that the proposed multiplier is superior in terms of speed as well as power consumption.

Keywords: Multiplier, Vedic Mathematics, LUTs, FPGAs.

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309 Design and Characterization of CMOS Readout Circuit for ISFET and ISE Based Sensors

Authors: Yuzman Yusoff, Siti Noor Harun, Noor Shelida Sallehand Tan Kong Yew

Abstract:

This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.

Keywords: Readout interface circuit (ROIC), analog interface circuit, ion sensitive field effect transistor (ISFET), ion selective electrode (ISE), and ion sensor electronics.

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308 Design and Characterization of CMOS Readout Circuit for ISFET and ISE Based Sensors

Authors: Yuzman Yusoff, Siti Noor Harun, Noor Shelida Sallehand, Tan Kong Yew

Abstract:

This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 Rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.

Keywords: Readout interface circuit (ROIC), analog interface circuit, ion sensitive field effect transistor (ISFET), ion selective electrode (ISE), ion sensor electronics.

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307 An Efficient Implementation of High Speed Vedic Multiplier Using Compressors for Image Processing Applications

Authors: Shobha Sharma, Amita Dev, Akanksha Kant

Abstract:

Digital signal processor, image signal processor and FIR filters have multipliers as an important part of their design. On the basis of Vedic mathematics, Vedic multipliers have come out to be very fast multipliers. One of the image processing applications is edge detection. This research presents a small area and high speed 8 bit Vedic multiplier system comprising of compressor based adders. This results in faster edge detection. This architecture is tested on Xilinx vertex 4 FPGA board and simulations were carried out using the Xilinx synthesis tool. Comparisons are made and this system is found to be smaller in area with high speed (the lesser propagation delay). This compressor based Vedic multiplier is 1.1 times speedier than a typical Vedic multiplier. Also, this Vedic Multiplier is 2 times speedier than a ‘simple’ multiplier.

Keywords: Detection of edges, Vedic multiplier, image processing, Urdhva Tiryakbhyam sutra.

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306 A Very High Speed, High Resolution Current Comparator Design

Authors: Neeraj K. Chasta

Abstract:

This paper presents an idea for analog current comparison which compares input signal and reference currents with high speed and accuracy. Proposed circuit utilizes amplification properties of common gate configuration, where voltage variations of input current are amplified and a compared output voltage is developed. Cascaded inverter stages are used to generate final CMOS compatible output voltage. Power consumption of circuit can be controlled by the applied gate bias voltage. The comparator is designed and studied at 180nm CMOS process technology for a supply voltage of 3V.

Keywords: Current Mode, Comparator, High Resolution, High Speed.

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305 Design of a Low Power Compensated 90nm RF Multiplier with Improved Isolation Characteristics for a Transmitted Reference Receiver Front End

Authors: Apratim Roy, A. B. M. H. Rashid

Abstract:

In this paper, a double balanced radio frequency multiplier is presented which is customized for transmitted reference ultra wideband (UWB) receivers. The multiplier uses 90nm model parameters and exploits compensating transistors to provide controllable gain for a Gilbert core. After performing periodic and quasiperiodic non linear analyses the RF mixer (multiplier) achieves a voltage conversion gain of 16 dB and a DSB noise figure of 8.253 dB with very low power consumption. A high degree of LO to RF isolation (in the range of -94dB), RF to IF isolation (in the range of -95dB) and LO to IF isolation (in the range of -143dB) is expected for this design with an input-referred IP3 point of -1.93 dBm and an input referred 1 dB compression point of -10.67dBm. The amount of noise at the output is 7.7 nV/√Hz when the LO input is driven by a 10dBm signal. The mixer manifests better results when compared with other reported multiplier circuits and its Zero-IF performance ensures its applicability as TR-UWB multipliers.

Keywords: UWB, Transmitted Reference, Controllable Gain, RFMixer, Multiplier.

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304 Low Power Capacitance-to-Voltage Converter for Magnetometer Interface IC

Authors: Dipankar Nag, Choe Andrew Kunil, Kevin Chai Tshun Chuan, Minkyu Je

Abstract:

This paper presents the design and implementation of a fully integrated Capacitance-to-Voltage Converter (CVC) as the analog front-end for magnetometer interface IC. The application demands very low power solution operating in the frequency of around 20 KHz. The design adapts low power architecture to create low noise electronic interface for Capacitive Micro-machined Lorentz force magnetometer sensor. Using a 0.18-μm CMOS process, simulation results of this interface IC show that the proposed CVC can provide 33 dB closed loop gain, 20 nV/√Hz input referred noise at 20 KHz, while consuming 65 μA current from 1.8-V supply. 

Keywords: Analog front end, Capacitance-to-Voltage Converter, Magnetometer, MEMS, Recycling Folded Cascode.

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303 Algorithm Design and Performance Evaluation of Equivalent CMOS Model

Authors: Parvinder S. Sandhu, Iqbaldeep Kaur, Amit Verma, Inderpreet Kaur, Birinderjit S. Kalyan

Abstract:

This work is a proposed model of CMOS for which the algorithm has been created and then the performance evaluation of this proposition has been done. In this context, another commonly used model called ZSTT (Zero Switching Time Transient) model is chosen to compare all the vital features and the results for the Proposed Equivalent CMOS are promising. In the end, the excerpts of the created algorithm are also included

Keywords: Dual Capacitor Model, ZSTT, CMOS, SPICEMacro-Model.

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302 Current Controlled Current Conveyor (CCCII)and Application using 65nm CMOS Technology

Authors: Zia Abbas, Giuseppe Scotti, Mauro Olivieri

Abstract:

Current mode circuits like current conveyors are getting significant attention in current analog ICs design due to their higher band-width, greater linearity, larger dynamic range, simpler circuitry, lower power consumption and less chip area. The second generation current controlled conveyor (CCCII) has the advantage of electronic adjustability over the CCII i.e. in CCCII; adjustment of the X-terminal intrinsic resistance via a bias current is possible. The presented approach is based on the CMOS implementation of second generation positive (CCCII+), negative (CCCII-) and dual Output Current Controlled Conveyor (DOCCCII) and its application as Universal filter. All the circuits have been designed and simulated using 65nm CMOS technology model parameters on Cadence Virtuoso / Spectre using 1V supply voltage. Various simulations have been carried out to verify the linearity between output and input ports, range of operation frequency, etc. The outcomes show good agreement between expected and experimental results.

Keywords: CCCII+, CCCII-, DOCCCII, Electronic tunability, Universal filter

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301 14-Bit 1MS/s Cyclic-Pipelined ADC

Authors: S. Saisundar, Shan Jiang, Kevin T. C. Chai, David Nuttman, Minkyu Je

Abstract:

This paper presents a 14-bit cyclic-pipelined Analog to digital converter (ADC) running at 1 MS/s. The architecture is based on a 1.5-bit per stage structure utilizing digital correction for each stage. The ADC consists of two 1.5-bit stages, one shift register delay line, and digital error correction logic. Inside each 1.5-bit stage, there is one gain-boosting op-amp and two comparators. The ADC was implemented in 0.18µm CMOS process and the design has an area of approximately 0.2 mm2. The ADC has a differential input range of 1.2 Vpp. The circuit has an average power consumption of 3.5mA with 10MHz sampling clocks. The post-layout simulations of the design satisfy 12-bit SNDR with a full-scale sinusoid input.


Keywords: Analog to digital converter, cyclic, gain-boosting, pipelined.

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300 LFSR Counter Implementation in CMOS VLSI

Authors: Doshi N. A., Dhobale S. B., Kakade S. R.

Abstract:

As chip manufacturing technology is suddenly on the threshold of major evaluation, which shrinks chip in size and performance, LFSR (Linear Feedback Shift Register) is implemented in layout level which develops the low power consumption chip, using recent CMOS, sub-micrometer layout tools. Thus LFSR counter can be a new trend setter in cryptography and is also beneficial as compared to GRAY & BINARY counter and variety of other applications. This paper compares 3 architectures in terms of the hardware implementation, CMOS layout and power consumption, using Microwind CMOS layout tool. Thus it provides solution to a low power architecture implementation of LFSR in CMOS VLSI.

Keywords: Chip technology, Layout level, LFSR, Pass transistor

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299 Design and Implementation of a 10-bit SAR ADC

Authors: Hasmayadi Abdul Majid, Rohana Musa

Abstract:

This paper presents the development of a 38.5 kS/s 10-bit low power SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and SAR digital logic to create 10 effective bits while consuming less than 7.8 mW with a 3.3 V power supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC.

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298 The Design of PFM Mode DC-DC Converter with DT-CMOS Switch

Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter.

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297 Design of Multiplier-free State-Space Digital Filters

Authors: Tamal Bose, Zhurun Zhang, Miloje Radenkovic, Ojas Chauhan

Abstract:

In this paper, a novel approach is presented for designing multiplier-free state-space digital filters. The multiplier-free design is obtained by finding power-of-2 coefficients and also quantizing the state variables to power-of-2 numbers. Expressions for the noise variance are derived for the quantized state vector and the output of the filter. A “structuretransformation matrix" is incorporated in these expressions. It is shown that quantization effects can be minimized by properly designing the structure-transformation matrix. Simulation results are very promising and illustrate the design algorithm.

Keywords: Digital filters, minimum noise, multiplier-free, quantization, state-space.

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296 Analog Circuit Design using Genetic Algorithm: Modified

Authors: Amod P. Vaze

Abstract:

Genetic Algorithm has been used to solve wide range of optimization problems. Some researches conduct on applying Genetic Algorithm to analog circuit design automation. These researches show a better performance due to the nature of Genetic Algorithm. In this paper a modified Genetic Algorithm is applied for analog circuit design automation. The modifications are made to the topology of the circuit. These modifications will lead to a more computationally efficient algorithm.

Keywords: Genetic algorithm, analog circuits, design.

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295 Design of CMOS CFOA Based on Pseudo Operational Transconductance Amplifier

Authors: Hassan Jassim Motlak

Abstract:

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to the symmetrical input stage. P-Spice simulation results are obtained using 0.18μm MIETEC CMOS process parameters and supply voltage of ±1.2V, 50μA biasing current. The p-spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, openloop gain bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/μS, THD of -63dB and DC consumption power (PC) of 2mW.

Keywords: Pseudo-OTA used CMOS CFOA, low power CFOA, high-performance CFOA, novel CFOA.

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294 Implemented 5-bit 125-MS/s Successive Approximation Register ADC on FPGA

Authors: S. Heydarzadeh, A. Kadivarian, P. Torkzadeh

Abstract:

Implemented 5-bit 125-MS/s successive approximation register (SAR) analog to digital converter (ADC) on FPGA is presented in this paper.The design and modeling of a high performance SAR analog to digital converter are based on monotonic capacitor switching procedure algorithm .Spartan 3 FPGA is chosen for implementing SAR analog to digital converter algorithm. SAR VHDL program writes in Xilinx and modelsim uses for showing results.

Keywords: Analog to digital converter, Successive approximation, Capacitor switching algorithm, FPGA

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