Design of a Low Power Compensated 90nm RF Multiplier with Improved Isolation Characteristics for a Transmitted Reference Receiver Front End
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Design of a Low Power Compensated 90nm RF Multiplier with Improved Isolation Characteristics for a Transmitted Reference Receiver Front End

Authors: Apratim Roy, A. B. M. H. Rashid


In this paper, a double balanced radio frequency multiplier is presented which is customized for transmitted reference ultra wideband (UWB) receivers. The multiplier uses 90nm model parameters and exploits compensating transistors to provide controllable gain for a Gilbert core. After performing periodic and quasiperiodic non linear analyses the RF mixer (multiplier) achieves a voltage conversion gain of 16 dB and a DSB noise figure of 8.253 dB with very low power consumption. A high degree of LO to RF isolation (in the range of -94dB), RF to IF isolation (in the range of -95dB) and LO to IF isolation (in the range of -143dB) is expected for this design with an input-referred IP3 point of -1.93 dBm and an input referred 1 dB compression point of -10.67dBm. The amount of noise at the output is 7.7 nV/√Hz when the LO input is driven by a 10dBm signal. The mixer manifests better results when compared with other reported multiplier circuits and its Zero-IF performance ensures its applicability as TR-UWB multipliers.

Keywords: UWB, Transmitted Reference, Controllable Gain, RFMixer, Multiplier.

Digital Object Identifier (DOI):

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