Search results for: Sample & Hold Amplifier and CMOS Technology.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3866

Search results for: Sample & Hold Amplifier and CMOS Technology.

3866 A Unity Gain Fully-Differential 10bit and 40MSps Sample-And-Hold Amplifier in 0.18um CMOS

Authors: Sanaz Haddadian, Rahele Hedayati

Abstract:

A 10bit, 40 MSps, sample and hold, implemented in 0.18-μm CMOS technology with 3.3V supply, is presented for application in the front-end stage of an analog-to-digital converter. Topology selection, biasing, compensation and common mode feedback are discussed. Cascode technique has been used to increase the dc gain. The proposed opamp provides 149MHz unity-gain bandwidth (wu), 80 degree phase margin and a differential peak to peak output swing more than 2.5v. The circuit has 55db Total Harmonic Distortion (THD), using the improved fully differential two stage operational amplifier of 91.7dB gain. The power dissipation of the designed sample and hold is 4.7mw. The designed system demonstrates relatively suitable response in different process, temperature and supply corners (PVT corners).

Keywords: Analog Integrated Circuit Design, Sample & Hold Amplifier and CMOS Technology.

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3865 Design of a CMOS Differential Operational Transresistance Amplifier in 90 nm CMOS Technology

Authors: Hafiz Muhammad Obaid, Umais Tayyab, Shabbir Majeed Ch.

Abstract:

In this paper, a CMOS differential operational transresistance amplifier (OTRA) is presented. The amplifier is designed and implemented in a standard umc90-nm CMOS technology. The differential OTRA provides wider bandwidth at high gain. It also shows much better rise and fall time and exhibits a very good input current dynamic range of 50 to 50 μA. The OTRA can be used in many analog VLSI applications. The presented amplifier has high gain bandwidth product of 617.6 THz Ω. The total power dissipation of the presented amplifier is also very low and it is 0.21 mW.

Keywords: CMOS, differential, operational transresistance amplifier, OTRA, 90 nm, VLSI.

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3864 Inverter Based Gain-Boosting Fully Differential CMOS Amplifier

Authors: Alpana Agarwal, Akhil Sharma

Abstract:

This work presents a fully differential CMOS amplifier consisting of two self-biased gain boosted inverter stages, that provides an alternative to the power hungry operational amplifier. The self-biasing avoids the use of external biasing circuitry, thus reduces the die area, design efforts, and power consumption. In the present work, regulated cascode technique has been employed for gain boosting. The Miller compensation is also applied to enhance the phase margin. The circuit has been designed and simulated in 1.8 V 0.18 µm CMOS technology. The simulation results show a high DC gain of 100.7 dB, Unity-Gain Bandwidth of 107.8 MHz, and Phase Margin of 66.7o with a power dissipation of 286 μW and makes it suitable candidate for the high resolution pipelined ADCs.

Keywords: CMOS amplifier, gain boosting, inverter-based amplifier, self-biased inverter.

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3863 Noise Optimization Techniques for 1V 1GHz CMOS Low-Noise Amplifiers Design

Authors: M. Zamin Khan, Yanjie Wang, R. Raut

Abstract:

A 1V, 1GHz low noise amplifier (LNA) has been designed and simulated using Spectre simulator in a standard TSMC 0.18um CMOS technology.With low power and noise optimization techniques, the amplifier provides a gain of 24 dB, a noise figure of only 1.2 dB, power dissipation of 14 mW from a 1 V power supply.

Keywords:

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3862 A Behavior Model of Discrete Sampling and Hold Amplifier based on AC Response

Authors: Wang Xing-hua, Zhong Shun-an, Zhang Zhuo

Abstract:

A kind of behavior model for discrete sampling and hold amplifier with charge transmission is analyzed. The transfer function and behavior features are based on the main AC responses of operation amplifier. The result used in pipelined and sigma-delta ADC shows the exact of model of sampling and hold amplifier, and the non-ideal factors are taken into account.

Keywords: SHA, response, behavior, transfer function.

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3861 Novel Linear Autozeroing Floating-gate Amplifier for Ultra Low-voltage Applications

Authors: Yngvar Berg, Mehdi Azadmehr

Abstract:

In this paper we present a linear autozeroing ultra lowvoltage amplifier. The autozeroing performed by all ULV circuits is important to reduce the impact of noise and especially avoid power supply noise in mixed signal low-voltage CMOS circuits. The simulated data presented is relevant for a 90nm TSMC CMOS process.

Keywords: Low-voltage, trans conductance amplifier, linearity, floating-gate.

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3860 3.5-bit Stage of the CMOS Pipeline ADC

Authors: Gao Wei, Xu Minglu, Xu Yan, Zhang Xiaotong, Wang Xinghua

Abstract:

A 3.5-bit stage of the CMOS pipelined ADC is proposed. In this report, the main part of 3.5-bit stage ADC is introduced. How the MDAC, comparator and encoder worked and designed are shown in details. Besides, an OTA which is used in fully differential pipelined ADC was described. Using gain-boost architecture with differential amplifier, this OTA achieve high-gain and high-speed. This design was using CMOS 0.18um process and simulation in Cadence. The result of the simulation shows that the OTA has a gain up to 80dB, the unity gain bandwidth of about 1.138GHz with 2pF load.

Keywords: pipelined ADC, MDAC, operational amplifier.

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3859 A Novel Logarithmic Current-Controlled Current Amplifier (LCCA)

Authors: Karama M. AL-Tamimi, Munir A. Al-Absi

Abstract:

A new OTA-based logarithmic-control variable gain current amplifier (LCCA) is presented. It consists of two Operational Transconductance Amplifier (OTA) and two PMOS transistors biased in weak inversion region. The circuit operates from 0.6V DC power supply and consumes 0.6 μW. The linear-dB controllable output range is 43 dB with maximum error less than 0.5dB. The functionality of the proposed design was confirmed using HSPICE in 0.35μm CMOS process technology.

Keywords: LCCA, OTA, Logarithmic, VGA, Weak inversion, Current-mode

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3858 Design of CMOS CFOA Based on Pseudo Operational Transconductance Amplifier

Authors: Hassan Jassim Motlak

Abstract:

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to the symmetrical input stage. P-Spice simulation results are obtained using 0.18μm MIETEC CMOS process parameters and supply voltage of ±1.2V, 50μA biasing current. The p-spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, openloop gain bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/μS, THD of -63dB and DC consumption power (PC) of 2mW.

Keywords: Pseudo-OTA used CMOS CFOA, low power CFOA, high-performance CFOA, novel CFOA.

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3857 Analog Front End Low Noise Amplifier in 0.18-µm CMOS for Ultrasound Imaging Applications

Authors: Haridas Kuruveettil, Dongning Zhao, Cheong Jia Hao, Minkyu Je

Abstract:

We present the design of Analog front end (AFE) low noise pre-amplifier implemented in a high voltage 0.18-µm CMOS technology for  a three dimensional ultrasound  bio microscope (3D UBM) application. The fabricated chip has 4X16 pre-amplifiers implemented to interface   a 2-D array of    high frequency capacitive micro-machined ultrasound transducers (CMUT). Core AFE cell consists of a high-voltage pulser in the transmit path, and a low-noise transimpedance amplifier in the receive path. Proposed system offers a high image resolution by the use of high frequency CMUTs with associated high performance imaging electronics integrated together.  Performance requirements and the design methods of the high bandwidth transimpedance amplifier are described in the paper. A single cell of transimpedance (TIA) amplifier and the bias circuit occupies a silicon area of 250X380 µm2 and the full chip occupies a total silicon area of 10x6.8 mm².

Keywords: Ultrasound, analog front end, medical imaging, beam forming, biomicroscope, transimpedance gain.

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3856 Real-Time Digital Oscilloscope Implementation in 90nm CMOS Technology FPGA

Authors: Nasir Mehmood, Jens Ogniewski, Vinodh Ravinath

Abstract:

This paper describes the design of a real-time audiorange digital oscilloscope and its implementation in 90nm CMOS FPGA platform. The design consists of sample and hold circuits, A/D conversion, audio and video processing, on-chip RAM, clock generation and control logic. The design of internal blocks and modules in 90nm devices in an FPGA is elaborated. Also the key features and their implementation algorithms are presented. Finally, the timing waveforms and simulation results are put forward.

Keywords: CMOS, VLSI, Oscilloscope, Field Programmable Gate Array (FPGA), VHDL, Video Graphics Array (VGA)

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3855 A 1.8 V RF CMOS Active Inductor with 0.18 um CMOS Technology

Authors: Siavash Heydarzadeh, Massoud Dousti

Abstract:

A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Inductors designed by integrated circuit occupy much smaller area, for this reason,attracted researchers attention for more than decade. In this design we used Advanced Designed System (ADS) for simulating cicuit.

Keywords: CMOS active inductor , 0.18um CMOS technology , ADS

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3854 Design and Layout of Two Stage High Band Width Operational Amplifier

Authors: Yasir Mahmood Qureshi

Abstract:

This paper presents the design and layout of a two stage, high speed operational amplifiers using standard 0.35um CMOS technology. The design procedure involves designing the bias circuit, the differential input pair, and the gain stage using CAD tools. Both schematic and layout of the operational amplifier along with the comparison in the results of the two has been presented. The operational amplifier designed, has a gain of 93.51db at low frequencies. It has a gain bandwidth product of 55.07MHz, phase margin of 51.9º and a slew rate of 22v/us for a load of capacitor of 10pF.

Keywords: Gain bandwidth product, Operational Amplifier, phase margin, slew rate.

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3853 High-Speed High-Gain CMOS OTA for SC Applications

Authors: M.Yousefi, A.Vatanjou, F.Nazeri

Abstract:

A fast settling multipath CMOS OTA for high speed switched capacitor applications is presented here. With the basic topology similar to folded-cascode, bandwidth and DC gain of the OTA are enhanced by adding extra paths for signal from input to output. Designed circuit is simulated with HSPICE using level 49 parameters (BSIM 3v3) in 0.35mm standard CMOS technology. DC gain achieved is 56.7dB and Unity Gain Bandwidth (UGB) obtained is 1.15GHz. These results confirm that adding extra paths for signal can improve DC gain and UGB of folded-cascode significantly.

Keywords: OTA (Operational Transconductance Amplifier), DC gain, Unity Gain Bandwidth (UGBW)

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3852 Symbolic Analysis of Input Impedance of CMOS Floating Active Inductors with Application in Fully Differential Bandpass Amplifier

Authors: Kittipong Tripetch

Abstract:

This paper proposes a study of input impedance of 2 types of CMOS active inductors. It derives 2 input impedance formulas. The first formula is the input impedance of the grounded active inductor. The second formula is the input impedance of the floating active inductor. After that, these formulas can be used to simulate magnitude and phase response of input impedance as a function of current consumption with MATLAB. Common mode rejection ratio (CMRR) of the fully differential bandpass amplifier is derived based on superposition principle. CMRR as a function of input frequency is plotted as a function of current consumption. 

Keywords: Grounded active inductor, floating active inductor, Fully differential bandpass amplifier.

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3851 A Sub-mW Low Noise Amplifier for Wireless Sensor Networks

Authors: Gianluca Cornetta, David J. Santos, Balwant Godara

Abstract:

A 1.2 V, 0.61 mA bias current, low noise amplifier (LNA) suitable for low-power applications in the 2.4 GHz band is presented. Circuit has been implemented, laid out and simulated using a UMC 130 nm RF-CMOS process. The amplifier provides a 13.3 dB power gain a noise figure NF< 2.28 dB and a 1-dB compression point of -15.69 dBm, while dissipating 0.74 mW. Such performance make this design suitable for wireless sensor networks applications such as ZigBee.

Keywords: Current Reuse, IEEE 802.15.4 (ZigBee), Low NoiseAmplifiers, Wireless Sensor Networks.

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3850 An 880 / 1760 MHz Dual Bandwidth Active RC Filter for 60 GHz Applications

Authors: Sanghoon Park, Kijin Kim, Kwangho Ahn

Abstract:

An active RC filters with a 880 / 1760 MHz dual bandwidth tuning ability is present for 60 GHz unlicensed band applications. A third order Butterworth low-pass filter utilizes two Cherry-Hooper amplifiers to satisfy the very high bandwidth requirements of an amplifier. The low-pass filter is fabricated in 90nm standard CMOS process. Drawing 6.7 mW from 1.2 V power supply, the low frequency gains of the filter are -2.5 and -4.1 dB, and the output third order intercept points (OIP3) are +2.2 and +1.9 dBm for the single channel and channel bonding conditions, respectively.

Keywords: Butterworth filter, active RC, 60 GHz, CMOS, dual bandwidth, Cherry-Hooper amplifier.

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3849 Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology

Authors: Renbin Dai, Rana Arslan Ali Khan

Abstract:

The design of Class A and Class AB 2-stage X band Power Amplifier is described in this report. This power amplifier is part of a transceiver used in radar for monitoring iron characteristics in a blast furnace. The circuit was designed using foundry WIN Semiconductors. The specification requires 15dB gain in the linear region, VSWR nearly 1 at input as well as at the output, an output power of 10 dBm and good stable performance in the band 10.9-12.2 GHz. The design was implemented by using inter-stage configuration, the Class A amplifier was chosen for driver stage i.e. the first amplifier focusing on the gain and the output amplifier conducted at Class AB with more emphasis on output power.

Keywords: Power amplifier, Class AB, Class A, MMIC, 2-stage, X band.

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3848 Temperature Sensor IC Design for Intracranial Monitoring Device

Authors: Wai Pan Chan, Minkyu Je

Abstract:

A precision CMOS chopping amplifier is adopted in this work to improve a CMOS temperature sensor high sensitive enough for intracranial temperature monitoring. An amplified temperature sensitivity of 18.8 ± 3*0.2 mV/oC is attained over the temperature range from 20 oC to 80 oC from a given 10 samples of the same wafer. The analog frontend design outputs the temperature dependent and the temperature independent signals which can be directly interfaced to a 10 bit ADC to accomplish an accurate temperature instrumentation system.

Keywords: Chopping, analog frontend, CMOS temperature sensor, traumatic brain injury (TBI), intracranial temperature monitoring.

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3847 Optimizing the Number of Bits/Stage in 10-Bit, 50Ms/Sec Pipelined A/D Converter Considering Area, Speed, Power and Linearity

Authors: P. Prasad Rao, K. Lal Kishore

Abstract:

Pipeline ADCs are becoming popular at high speeds and with high resolution. This paper discusses the options of number of bits/stage conversion techniques in pipelined ADCs and their effect on Area, Speed, Power Dissipation and Linearity. The basic building blocks like op-amp, Sample and Hold Circuit, sub converter, DAC, Residue Amplifier used in every stage is assumed to be identical. The sub converters use flash architectures. The design is implemented using 0.18

Keywords: 1.5 bits/stage, Conversion Frequency, Redundancy Switched Capacitor Sample and Hold Circuit

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3846 Design of High Gain, High Bandwidth Op-Amp for Reduction of Mismatch Currents in Charge Pump PLL in 180 nm CMOS Technology

Authors: R .H. Talwekar, S. S Limaye

Abstract:

The designing of charge pump with high gain Op- Amp is a challenging task for getting faithful response .Design of high performance phase locked loop require ,a design of high performance charge pump .We have designed a operational amplifier for reducing the error caused by high speed glitch in a transistor and mismatch currents . A separate Op-Amp has designed in 180 nm CMOS technology by CADENCE VIRTUOSO tool. This paper describes the design of high performance charge pump for GHz CMOS PLL targeting orthogonal frequency division multiplexing (OFDM) application. A high speed low power consumption Op-Amp with more than 500 MHz bandwidth has designed for increasing the speed of charge pump in Phase locked loop.

Keywords: Charge pump (CP) Orthogonal frequency divisionmultiplexing (OFDM), Phase locked loop (PLL), Phase frequencydetector (PFD), Voltage controlled oscillator (VCO),

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3845 A Low Power and High-Speed Conditional-Precharge Sense Amplifier Based Flip-Flop Using Single Ended Latch

Authors: Guo-Ming Sung, Naga Raju Naik R.

Abstract:

Paper presents a low power, high speed, sense-amplifier based flip-flop (SAFF). The flip-flop’s power con-sumption and delay are greatly reduced by employing a new conditionally precharge sense-amplifier stage and a single-ended latch stage. Glitch-free and contention-free latch operation is achieved by using a conditional cut-off strategy. The design uses fewer transistors, has a lower clock load, and has a simple structure, all of which contribute to a near-zero setup time. When compared to previous flip-flop structures proposed for similar input/output conditions, this design’s performance and overall PDP have improved. The post layout simulation of the circuit uses 2.91µW of power and has a delay of 65.82 ps. Overall, the power-delay product has seen some enhancements. Cadence Virtuoso Designing tool with CMOS 90nm technology are used for all designs.

Keywords: high-speed, low-power, flip-flop, sense-amplifier

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3844 LFSR Counter Implementation in CMOS VLSI

Authors: Doshi N. A., Dhobale S. B., Kakade S. R.

Abstract:

As chip manufacturing technology is suddenly on the threshold of major evaluation, which shrinks chip in size and performance, LFSR (Linear Feedback Shift Register) is implemented in layout level which develops the low power consumption chip, using recent CMOS, sub-micrometer layout tools. Thus LFSR counter can be a new trend setter in cryptography and is also beneficial as compared to GRAY & BINARY counter and variety of other applications. This paper compares 3 architectures in terms of the hardware implementation, CMOS layout and power consumption, using Microwind CMOS layout tool. Thus it provides solution to a low power architecture implementation of LFSR in CMOS VLSI.

Keywords: Chip technology, Layout level, LFSR, Pass transistor

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3843 CAD Tools Broadband Amplifier Design

Authors: Salwa M. Salah Eldeen, Fathi A. Farag, Abd Allah M. Moselhy

Abstract:

This paper proposed a new CAD tools for microwave amplifier design. The proposed tool is based on survey about the broadband amplifier design methods, such as the Feedback amplifiers, balanced amplifiers and Compensated Matching Network The proposed tool is developed for broadband amplifier using a compensated matching network "unconditional stability amplifier". The developed program is based on analytical procedures with ability of smith chart explanation. The C# software is used for the proposed tools implementation. The program is applied on broadband amplifier as an example for testing. The designed amplifier is considered as a broadband amplifier at the range 300-700 MHz. The results are highly agreement with the expected results. Finally, these methods can be extended for wide band amplifier design.

Keywords: Broadband amplifier (BBA), Compensated Matching Network, Microwave Amplifier.

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3842 Multi-Level Pulse Width Modulation to Boost the Power Efficiency of Switching Amplifiers for Analog Signals with Very High Crest Factor

Authors: Jan Doutreloigne

Abstract:

The main goal of this paper is to develop a switching amplifier with optimized power efficiency for analog signals with a very high crest factor such as audio or DSL signals. Theoretical calculations show that a switching amplifier architecture based on multi-level pulse width modulation outperforms all other types of linear or switching amplifiers in that respect. Simulations on a 2 W multi-level switching audio amplifier, designed in a 50 V 0.35 mm IC technology, confirm its superior performance in terms of power efficiency. A real silicon implementation of this audio amplifier design is currently underway to provide experimental validation.

Keywords: Audio amplifier, multi-level switching amplifier, power efficiency, pulse width modulation, PWM, self-oscillating amplifier.

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3841 Design of a CMOS Highly Linear Front-end IC with Auto Gain Controller for a Magnetic Field Transceiver

Authors: Yeon-kug Moon, Kang-Yoon Lee, Yun-Jae Won, Seung-Ok Lim

Abstract:

This paper describes a low-voltage and low-power channel selection analog front end with continuous-time low pass filters and highly linear programmable gain amplifier (PGA). The filters were realized as balanced Gm-C biquadratic filters to achieve a low current consumption. High linearity and a constant wide bandwidth are achieved by using a new transconductance (Gm) cell. The PGA has a voltage gain varying from 0 to 65dB, while maintaining a constant bandwidth. A filter tuning circuit that requires an accurate time base but no external components is presented. With a 1-Vrms differential input and output, the filter achieves -85dB THD and a 78dB signal-to-noise ratio. Both the filter and PGA were implemented in a 0.18um 1P6M n-well CMOS process. They consume 3.2mW from a 1.8V power supply and occupy an area of 0.19mm2.

Keywords: component ; Channel selection filters, DC offset, programmable gain amplifier, tuning circuit

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3840 A Fault-Tolerant Full Adder in Double Pass CMOS Transistor

Authors: Abdelmonaem Ayachi, Belgacem Hamdi

Abstract:

This paper presents a fault-tolerant implementation for adder schemes using the dual duplication code. To prove the efficiency of the proposed method, the circuit is simulated in double pass transistor CMOS 32nm technology and some transient faults are voluntary injected in the Layout of the circuit. This fully differential implementation requires only 20 transistors which mean that the proposed design involves 28.57% saving in transistor count compared to standard CMOS technology.

Keywords: Semiconductors, digital electronics, double pass transistor technology, Full adder, fault tolerance.

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3839 A High-Speed and Low-Energy Ternary Content Addressable Memory Design Using Feedback in Match-Line Sense Amplifier

Authors: Syed Iftekhar Ali, M. S. Islam

Abstract:

In this paper we present an energy efficient match-line (ML) sensing scheme for high-speed ternary content-addressable memory (TCAM). The proposed scheme isolates the sensing unit of the sense amplifier from the large and variable ML capacitance. It employs feedback in the sense amplifier to successfully detect a match while keeping the ML voltage swing low. This reduced voltage swing results in large energy saving. Simulation performed using 130nm 1.2V CMOS logic shows at least 30% total energy saving in our scheme compared to popular current race (CR) scheme for similar search speed. In terms of speed, dynamic energy, peak power consumption and transistor count our scheme also shows better performance than mismatch-dependant (MD) power allocation technique which also employs feedback in the sense amplifier. Additionally, the implementation of our scheme is simpler than CR or MD scheme because of absence of analog control voltage and programmable delay circuit as have been used in those schemes.

Keywords: content-addressable memory, energy consumption, feedback, peak power, sensing scheme, sense amplifier, ternary.

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3838 A 1.5V,100MS/s,12-bit Current-Mode CMOSS ample-and-Hold Circuit

Authors: O. Hashemipour, S. G. Nabavi

Abstract:

A high-linearity and high-speed current-mode sampleand- hold circuit is designed and simulated using a 0.25μm CMOS technology. This circuit design is based on low voltage and it utilizes a fully differential circuit. Due to the use of only two switches the switch related noise has been reduced. Signal - dependent -error is completely eliminated by a new zero voltage switching technique. The circuit has a linearity error equal to ±0.05μa, i.e. 12-bit accuracy with a ±160 μa differential output - input signal frequency of 5MHZ, and sampling frequency of 100 MHZ. Third harmonic is equal to –78dB.

Keywords: Zero-voltage-technique, MOS-resistor, OTA, Feedback-resistor.

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3837 A Current Steering Positive Feedback Improved Recycling Folded Cascode OTA

Authors: S. Kumaravel, B. Venkataramani

Abstract:

In the literature, Improved Recycling Folded Cascode (IRFC) Operational Transconductance Amplifier (OTA) is proposed for enhancing the DC gain and the Unity Gain Bandwidth (UGB) of the Recycling Folded Cascode (RFC) OTA. In this paper, an enhanced IRFC (EIRFC) OTA which uses positive feedback at the cascode node is proposed for enhancing the differential mode (DM) gain without changing the unity gain bandwidth (UGB) and lowering the Common mode (CM) gain. For the purpose of comparison, IRFC and EIRFC OTAs are implemented using UMC 90nm CMOS technology and studied through simulation. From the simulation, it is found that the DM gain and CM gain of EIRFC OTA is higher by 6dB and lower by 38dB respectively, compared to that of IRFC OTA for the same power and area. The slew rate of EIRFC OTA is also higher by a factor of 1.5.

Keywords: Cascode Amplifier, CMRR, gm/ID Methodology, Recycling, Slew Rate.

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