Search results for: pass transistor.

Authors: Saad Chakkor, Mostafa Baghouri, Abderrahmane Hajraoui

Abstract:

ESPRIT-TLS method appears a good choice for high resolution fault detection in induction machines. It has a very high effectiveness in the frequency and amplitude identification. Contrariwise, it presents a high computation complexity which affects its implementation in real time fault diagnosis. To avoid this problem, a Fast-ESPRIT algorithm that combined the IIR band-pass filtering technique, the decimation technique and the original ESPRIT-TLS method was employed to enhance extracting accurately frequencies and their magnitudes from the wind stator current with less computation cost. The proposed algorithm has been applied to verify the wind turbine machine need in the implementation of an online, fast, and proactive condition monitoring. This type of remote and periodic maintenance provides an acceptable machine lifetime, minimize its downtimes and maximize its productivity. The developed technique has evaluated by computer simulations under many fault scenarios. Study results prove the performance of Fast- ESPRIT offering rapid and high resolution harmonics recognizing with minimum computation time and less memory cost.

Keywords: Spectral Estimation, ESPRIT-TLS, Real Time, Diagnosis, Wind Turbine Faults, Band-Pass Filtering, Decimation.

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Authors: P. Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber. 

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber.

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Authors: Makesh Iyer, T. Shanmuganantham

Abstract:

This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration technique which is one of the techniques to improve the stability of the potentially unstable device and make it unconditionally stable. Also, different substrates are used for designing the LNA to identify the suitable substrate that gives optimum results. It is observed that the noise immunity is more in Low Noise Amplifier (LNA) designed using RT Duroid 5880 substrate. This design resulted in noise figure of 0.859 dB and power gain of 15.530 dB. The comparative analysis of the LNA design is discussed in this paper.

Keywords: Low noise amplifier, substrate, distributed components, gain, noise figure.

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Authors: Rahul Bansal, Sudipta Majumdar

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This paper presents the closed form nonlinear expressions of bipolar junction transistor (BJT) differential amplifier (DA) using perturbation method. Circuit equations have been derived using Kirchhoff’s voltage law (KVL) and Kirchhoff’s current law (KCL). The perturbation method has been applied to state variables for obtaining the linear and nonlinear terms. The implementation of the proposed method is simple. The closed form nonlinear expressions provide better insights of physical systems. The derived equations can be used for signal processing applications.

Keywords: Differential amplifier, perturbation method, Taylor series.

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Authors: Anwar H. Jarndal, Ahmed S. Elwakil

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In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.

Keywords: Fractional-order modeling, GaN HEMT, Si-substrate, open de-embedding structure.

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Authors: Krishnaiah Arkanti, Ramulu Malothu

Abstract:

The experiments have been conducted to study the mechanical properties of commercially pure copper processing at room temperature by severe plastic deformation using equal channel angular extrusion (ECAE) through a die of 90^oangle up to 3 passes by route B_C i.e. rotating the sample in the same direction by 90^o after each pass. ECAE is used to produce from existing coarse grains to ultra-fine, equiaxed grains structure with high angle grain boundaries in submicron level by introducing a large amount of shear strain in the presence of hydrostatic pressure into the material without changing billet shape or dimension. Mechanical testing plays an important role in evaluating fundamental properties of engineering materials as well as in developing new materials and in controlling the quality of materials for use in design and construction. Yield stress, ultimate tensile stress and ductility are structure sensitive properties and vary with the structure of the material. Microhardness and tensile tests were carried out to evaluate the hardness, strength and ductility of the ECAE processed materials. The results reveal that the strength and hardness of commercially pure copper samples improved significantly without losing much ductility after each pass.

Keywords: Equal Channel Angular Extrusion, Severe Plastic Deformation, Copper, Mechanical Properties.

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Authors: Mbainaibeye Jérôme, Noureddine Ellouze

Abstract:

We study in this paper the effect of the scene changing on image sequences coding system using Embedded Zerotree Wavelet (EZW). The scene changing considered here is the full motion which may occurs. A special image sequence is generated where the scene changing occurs randomly. Two scenarios are considered: In the first scenario, the system must provide the reconstruction quality as best as possible by the management of the bit rate (BR) while the scene changing occurs. In the second scenario, the system must keep the bit rate as constant as possible by the management of the reconstruction quality. The first scenario may be motivated by the availability of a large band pass transmission channel where an increase of the bit rate may be possible to keep the reconstruction quality up to a given threshold. The second scenario may be concerned by the narrow band pass transmission channel where an increase of the bit rate is not possible. In this last case, applications for which the reconstruction quality is not a constraint may be considered. The simulations are performed with five scales wavelet decomposition using the 9/7-tap filter bank biorthogonal wavelet. The entropy coding is performed using a specific defined binary code book and EZW algorithm. Experimental results are presented and compared to LEAD H263 EVAL. It is shown that if the reconstruction quality is the constraint, the system increases the bit rate to obtain the required quality. In the case where the bit rate must be constant, the system is unable to provide the required quality if the scene change occurs; however, the system is able to improve the quality while the scene changing disappears.

Keywords: Image Sequence Compression, Wavelet Transform, Scene Changing, Zero Tree, Bit Rate, Quality.

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Authors: Yashvir Singh, Swati Chamoli

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In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In_0.53Ga_0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.

Keywords: InGaAs, dielectric, lateral, power MOSFET.

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Authors: Ahmed El Oualkadi, Abdellah Ait Ouahman

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This paper discusses a systematic design of a Σ-Δ fractional-N Phase-Locked Loop based on HDL behavioral modeling. The proposed design consists in describing the mixed behavior of this PLL architecture starting from the specifications of each building block. The HDL models of critical PLL blocks have been described in VHDL-AMS to predict the different specifications of the PLL. The effect of different noise sources has been efficiently introduced to study the PLL system performances. The obtained results are compared with transistor-level simulations to validate the effectiveness of the proposed models for wireless applications in the frequency range around 2.45 GHz.

Keywords: Phase-locked loop, frequency synthesizer, fractional-N PLL, Σ-Δ modulator, HDL models

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Authors: A. J. Mahmood, L. B. Y. Aldabbagh

Abstract:

The counter flow solar air heaters, with four transverse fins and wire mesh layers are constructed and investigated experimentally for thermal efficiency at a geographic location of Cyprus in the city of Famagusta. The absorber plate is replaced by sixteen steel wire mesh layers, 0.18 x 0.18cm in cross section opening and a 0.02cm in diameter. The wire mesh layers arranged in three groups, first and second include 6 layers, while the third include 4 layers. All layers fixed in the duct parallel to the glazing and each group separated from the others by wood frame thickness of 0.5cm to reduce the pressure drop. The transverse fins arranged in a way to force the air to flow through the bed like eight letter path with flow depth 3cm. The proposed design has increased the heat transfer rate, but on other hand causes a high pressure drop. The obtained results show that, for air mass flow rate range between 0.011-0.036kg/s, the thermal efficiency increases with increasing the air mass flow. The maximum efficiency obtained is 65.6% for the mass flow rate of 0.036kg/s. Moreover, the temperature difference between the outlet flow and the ambient temperature, ΔT, reduces as the air mass flow rate increase. The maximum difference between the outlet and ambient temperature obtained was 43°C for double pass for minimum mass flow rate of 0.011kg/s. Comparison with a conventional solar air heater collector shows a significantly development in the thermal efficiency.

Keywords: Counter flow, solar air heater (SAH), Wire mesh, Fins, Thermal efficiency.

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Authors: Young Wook Lee, Sun-Jae Kim, Soo-Yeon Lee, Moon-Kyu Song, Woo-Geun Lee Min-Koo Han

Abstract:

We have fabricated a-IGZO TFT and investigated the stability under positive DC and AC bias stress. The threshold voltage of a-IGZO TFT shifts positively under those biases, and that reduces on-current. For this reason, conventional shift-register circuit employing TFTs which stressed by positive bias will be unstable, may do not work properly. We have designed a new 6-transistor shift-register, which has less transistors than prior circuits. The TFTs of the proposed shift-register are not suffering from positive DC or AC stress, mainly kept unbiased. Despite the compact design, the stable output signal was verified through the SPICE simulation even under RC delay of clock signal.

Keywords: Indium Gallium Zinc Oxide (IGZO), Thin FilmTransistor (TFT), shift-register

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Authors: Kyong-min Lee, Moon Soo Chang, PooGyeon Park

Abstract:

In this paper, we propose a geometric modeling of illumination on the patterned image containing etching transistor. This image is captured by a commercial camera during the inspection of a TFT-LCD panel. Inspection of defect is an important process in the production of LCD panel, but the regional difference in brightness, which has a negative effect on the inspection, is due to the uneven illumination environment. In order to solve this problem, we present a geometric modeling of illumination consisting of an interpolation using the least squares method and 3D modeling using bezier surface. Our computational time, by using the sampling method, is shorter than the previous methods. Moreover, it can be further used to correct brightness in every patterned image.

Keywords: Bezier, defect, geometric modeling, illumination, inspection, LCD, panel.

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Authors: V. Tereshchenko, A. Tregubenko

Abstract:

In this study we survey the method for fast finding a minimum link path between two arbitrary points within a simple polygon, which can pass only through the vertices, with preprocessing.

Keywords: Minimum link path, simple polygon, Steiner points, optimal algorithm.

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Authors: Arafet Bouaicha, Hatem Allegui, Amar Rouane, El-Hassane Aglzim, Abdelkader Mami

Abstract:

In order to further understand the behavior of PEM fuel cell and optimize their performance, it is necessary to perform measurements in real time. The internal impedance measurement by electrochemical impedance spectroscopy (EIS) is of great importance. In this work, we present the impedance measurement method of a PEM fuel cell by electrochemical impedance spectroscopy method and the realization steps of electronic load for this measuring technique implementation. The theoretical results are obtained from the simulation of software PSPICE® and experimental tests are carried out using the Ballard Nexa™ PEM fuel cell system.

Keywords: Electronic load, MOS transistor, PEM fuel cell, Impedance measurement, Electrochemical Impedance Spectroscopy (EIS).

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Authors: Mehdi Saeidmanesh, Razali Ismail

Abstract:

Recently, Graphene Nanoribbon Field Effect Transistors (GNR FETs) attract a great deal of attention due to their better performance in comparison with conventional devices. In this paper, channel length Modulation (CLM) effect on the electrical characteristics of GNR FETs is analytically studied and modeled. To this end, the special distribution of the electric potential along the channel and current-voltage characteristic of the device is modeled. The obtained results of analytical model are compared to the experimental data of published works. As a result, it is observable that considering the effect of CLM, the current-voltage response of GNR FET is more realistic.

Keywords: Graphene nanoribbon, field effect transistors, short channel effects, channel length modulation.

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Authors: Mazhar B. Tayel, Amr H. Yassin

Abstract:

A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.

Keywords: PHEMT, Genetic Algorithms, small signal modeling, optimization.

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Authors: Jan Vanerek, Anna Benesova, Pavel Rovnanik

Abstract:

The research study was based on an evaluation of the ability of glued test samples to pass the criterion of sufficient bondline adhesion under the exposure conditions defined in EN 302- 1. Additionally, an infrared spectroscopic analysis of the evaluated adhesives (phenol-resorcinol-formaldehyde PRF and melamine-ureaformaldehyde MUF) with different mix ratios was carried out to evaluate the possible effects of a faulty technological process.

Keywords: Adhesives, bondline, durability, timber.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Guo-Liang Zhang, Tai-Hong Wang

Abstract:

We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

Keywords: Photo-to-dark-current contrast ratio, Photo-current, Dark-current, Process parameter

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Authors: W. Z. Wang, S. Todd, S. B. Dolmanan, K. B. Lee, L. Yuan, H. F. Sun, S. L. Selvaraj, M.Krishnakumar, G. Q. Lo, S. Tripathy

Abstract:

The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.

Keywords: Raman, photo luminescence, AlGaN/GaN, HEMT.

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Authors: H. Daoud Dammak, S. Bensalem, S. Zouari, M. Loulou

Abstract:

This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor sizing. Using 0.35μm CMOS process, the designed folded cascode OTA achieves a DC gain of 77.5dB and a unity-gain frequency of 430MHz in strong inversion mode. In moderate inversion mode, it has a 92dB DC gain and provides a gain bandwidth product of around 69MHz. The OTA circuit has a DC gain of 75.5dB and unity-gain frequency limited to 19.14MHZ in weak inversion region.

Keywords: CMOS IC design, Folded Cascode OTA, gm/ID methodology, optimization.

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Authors: Po-Hsieh Lin, Jyi-Tsong Lin

Abstract:

A vertical SOI-based MOSFET with trench body structure operated as 1T DRAM cell at various temperatures has been studied and investigated. Different operation temperatures are assigned for the device for its performance comparison, thus the thermal stability is carefully evaluated for the future memory device applications. Based on the simulation, the vertical SOI-based MOSFET with trench body structure demonstrates the electrical characteristics properly and possess conspicuous kink effect at various operation temperatures. Transient characteristics were also performed to prove that its programming window values and retention time behaviors are acceptable when the new 1T DRAM cell is operated at high operation temperature.

Keywords: SOI, 1T DRAM, thermal stability.

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Authors: A. Fakhfakh, N. Ksentini, M. Loulou, N. Masmoudi, J. J. Charlot

Abstract:

Today, design requirements are extending more and more from electronic (analogue and digital) to multidiscipline design. These current needs imply implementation of methodologies to make the CAD product reliable in order to improve time to market, study costs, reusability and reliability of the design process. This paper proposes a high level design approach applied for the characterization and the optimization of Switched-Current Sigma- Delta Modulators. It uses the new hardware description language VHDL-AMS to help the designers to optimize the characteristics of the modulator at a high level with a considerably reduced CPU time before passing to a transistor level characterization.

Keywords: high level design, optimization, switched-Current Sigma-Delta Modulators, VHDL-AMS.

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Authors: Vishnu Pratap Singh Kirar

Abstract:

Memristor is also known as the fourth fundamental passive circuit element. When current flows in one direction through the device, the electrical resistance increases and when current flows in the opposite direction, the resistance decreases. When the current is stopped, the component retains the last resistance that it had, and when the flow of charge starts again, the resistance of the circuit will be what it was when it was last active. It behaves as a nonlinear resistor with memory. Recently memristors have generated wide research interest and have found many applications. In this paper we survey the various applications of memristors which include non volatile memory, nanoelectronic memories, computer logic, neuromorphic computer architectures low power remote sensing applications, crossbar latches as transistor replacements, analog computations and switches.

Keywords: Memristor, non-volatile memory, arithmatic operation, programmable resistor.

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Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

Abstract:

We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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Authors: Nasser Erfani Majd, Mojtaba Lotfizad

Abstract:

In this paper, an ultra low power and low jitter 12bit CMOS digitally controlled oscillator (DCO) design is presented. Based on a ring oscillator implemented with low power Schmitt trigger based inverters. Simulation of the proposed DCO using 32nm CMOS Predictive Transistor Model (PTM) achieves controllable frequency range of 550MHz~830MHz with a wide linearity and high resolution. Monte Carlo simulation demonstrates that the time-period jitter due to random power supply fluctuation is under 31ps and the power consumption is 0.5677mW at 750MHz with 1.2V power supply and 0.53-ps resolution. The proposed DCO has a good robustness to voltage and temperature variations and better linearity comparing to the conventional design.

Keywords: digitally controlled oscillator (DCO), low power, jitter; good linearity, robust

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Authors: Z.A. Jaffery, Vinay Kumar Chandna, Sunil Kumar Chaudhary

Abstract:

This paper present a MATLAB-SIMULINK model of a single phase 2.5 KVA, 240V RMS controlled PV VSI (Photovoltaic Voltage Source Inverter) inverter using IGBTs (Insulated Gate Bipolar Transistor). The behavior of output voltage, output current, and the total harmonic distortion (THD), with the variation in input dc blocking capacitor (Cdc), for linear and non-linear load has been analyzed. The values of Cdc as suggested by the other authors in their papers are not clearly defined and it poses difficulty in selecting the proper value. As the dc power stored in Cdc, (generally placed parallel with battery) is used as input to the VSI inverter. The simulation results shows the variation in the output voltage and current with different values of Cdc for linear and non-linear load connected at the output side of PV VSI inverter and suggest the selection of suitable value of Cdc.

Keywords: DC Blocking capacitor, IGBTs, PV VSI, THD.

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Authors: Lubna M. Zakaryia Mahmoud, Mohammed A. Dawood, Doaa A. Heiba

Abstract:

A prospective double-blind placebo controlled trial carried out on 60 children known to be asthmatic who presented to the emergency department at Alexandria University of Children’s Hospital at El-Shatby with acute asthma exacerbations to assess the efficacy of adding inhaled magnesium sulfate to β-agonist, compared with β-agonist in saline, in the management of acute asthma exacerbations in children. The participants in the study were divided in two groups; Group A (study group) received inhaled salbutamol solution (0.15 ml/kg) plus isotonic magnesium sulfate 2 ml in a nebulizer chamber. Group B (control group): received nebulized salbutamol solution (0.15 ml/kg) diluted with placebo (2 ml normal saline). Both groups received inhaled solution every 20 minutes that was repeated for three doses. They were evaluated using the Pediatric Asthma Severity Score (PASS), oxygen saturation using portable pulse oximetry and peak expiratory flow rate using a portable peak expiratory flow meter at initially recorded as zero-minute assessment and every 20 minutes from the end of each nebulization (nebulization lasts 5-10 minutes) recorded as 20, 40 and 60-minute assessments. Regarding PASS, comparison showed non-significant difference with p-value 0.463, 0.472, 0.0766 at 20, 40 and 60 minutes. Regarding oxygen saturation, improvement was more significant towards group A starting from 40 min with significant p-value=0.000. At 60 min p-value=0.000. Although mean PEFR significantly improved from zero-min in both groups; however, improvement was more significant in group A with significant p-value = 0.015, 0.001, 0.001 at 20 min, 40 min and 60 min, respectively. The conclusion this study suggests is that inhaled magnesium sulfate is an efficient add on drug to standard β- agonist inhalation used in the treatment of moderate to severe asthma exacerbations.

Keywords: Nebulized, magnesium sulfate, acute asthma, pediatric.

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Authors: Soo-Yeon Lee, Seung-Min Song, Moon-Kyu Song, Woo-Geun Lee, Kap-Soo Yoon, Jang-Yeon Kwon, Min-Koo Han

Abstract:

We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (Vth) decreased and subthreshold slope (SS) increased at forward sweep, while Vth and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of Vth and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.

Keywords: thin film transistor, oxide-based semiconductor, lightresponse

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Authors: Abdalla Mohamed Eblabla

Abstract:

Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E and F are the main techniques for realizing power amplifiers.

An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), Gallium Nitride (GaN), Agilent’s Advanced Design system (ADS) and lumped elements.

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Authors: Valeriy Naumov, Olli Martikainen

Abstract:

In this paper we propose new method for simultaneous generating multiple quantiles corresponding to given probability levels from data streams and massive data sets. This method provides a basis for development of single-pass low-storage quantile estimation algorithms, which differ in complexity, storage requirement and accuracy. We demonstrate that such algorithms may perform well even for heavy-tailed data.

Keywords: Quantile estimation, data stream, heavy-taileddistribution, tail index.

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