Search results for: IGBT

Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO₂ interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.

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Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

Abstract:

A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: High voltage, IGBT, Solid states switch.

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Authors: P. Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber. 

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber.

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Authors: Ly. Benbahouche

Abstract:

Currently, several soft switching topologies have been studied to achieve high power switching efficiency, reduced cost, improved reliability and reduced parasites. It is well known that improvement in power electronics systems always depend on advanced in power devices. The IGBT has been successfully used in a variety of switching applications such as motor drives and appliance control because of its superior characteristics.

The aim of this paper is focuses on simulation and explication of the internal dynamics of IGBTs behaviour under the most popular soft switching schemas that is Zero Current Switching (ZCS) environments.

The main purpose of this paper is to point out some mechanisms relating to current tail during the turn-off and examination of the response at turn-off with variation of temperature, inductance L, snubber capacitors Cs, and bus voltage in order to achieve an improved understanding of internal carrier dynamics. It is shown that the snubber capacitor, the inductance and even the temperature controls the magnitude and extent of the tail current, hence the turn-off time (switching speed of the device).

Moreover, it has also been demonstrated that the ZCS switching can be utilized efficiently to improve and reduce the power losses as well as the turn-off time. Furthermore, the turn-off loss in ZCS was found to depend on the time of switching of the device.

Keywords: PT-IGBT, ZCS, turn-off losses, dV/dt.

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Authors: M. S. Merzoug, F. Naceri

Abstract:

This paper presents a comparative study on two most popular control strategies for Permanent Magnet Synchronous Motor (PMSM) drives: field-oriented control (FOC) and direct torque control (DTC). The comparison is based on various criteria including basic control characteristics, dynamic performance, and implementation complexity. The study is done by simulation using the Simulink Power System Blockset that allows a complete representation of the power section (inverter and PMSM) and the control system. The simulation and evaluation of both control strategies are performed using actual parameters of Permanent Magnet Synchronous Motor fed by an IGBT PWM inverter.

Keywords: PMSM, FOC, DTC, hysteresis, PWM.

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Authors: Satoru Kaneko, Takeshi Ito, Kensuke Akiyama, Manabu Yasui, Chihiro Kato, Satomi Tanaka, Yasuo Hirabayashi, Takeshi Ozawa, Akira Matsuno, Takashi Nire, Hiroshi Funakubo, Mamoru Yoshimoto

Abstract:

As application of re-activation of backside on power device Insulated Gate Bipolar Transistor (IGBT), laser annealing was employed to irradiate amorphous silicon substrate, and resistivities were measured using four point probe measurement. For annealing the amorphous silicon two lasers were used at wavelength of visible green (532 nm) together with Infrared (793 nm). While the green laser efficiently increased temperature at top surface the Infrared laser reached more deep inside and was effective for melting the top surface. A finite element method was employed to evaluate time dependent thermal distribution in silicon substrate.

Keywords: laser, annealing, silicon, recrystallization, thermal distribution, resistivity, finite element method, absorption, melting point, latent heat of fusion.

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Authors: Shreyash Sinai Kunde, Siddhang Tendulkar, Shiv Prakash Gupta, Gaurav Kumar, Suresh Mikkili

Abstract:

One of the major power quality concerns in modern times is the problem of current harmonics. The current harmonics is caused due to the increase in non-linear loads which is largely dominated by power electronics devices. The Shunt active filtering is one of the best solutions for mitigating current harmonics. This paper describes a fuzzy logic controller based (FLC) based three Phase Shunt active Filter to achieve low current harmonic distortion (THD) and Reactive power compensation. The performance of fuzzy logic controller is analysed under both balanced sinusoidal and unbalanced sinusoidal source condition. The above controller serves the purpose of maintaining DC Capacitor Voltage constant. The proposed shunt active filter uses hysteresis current controller for current control of IGBT based PWM inverter. The simulation results of model in Simulink MATLAB reveals satisfying results.

Keywords: Shunt active filter, Current harmonics, Fuzzy logic controller, Hysteresis current controller.

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Authors: H. Mirzaee, A. Pourzaki

Abstract:

Using strength Pulse Electrical Field (PEF) in food industries is a non-thermal process that can deactivate microorganisms and increase penetration in plant and animals tissues without serious impact on food taste and quality. In this paper designing and fabricating of a PEF generator has been presented. Pulse generation methods have been surveyed and the best of them selected. The equipment by controller set can generate square pulse with adjustable parameters such as amplitude 1-5kV, frequency 0.1-10Hz, pulse width 10-100s, and duty cycle 0-100%. Setting the number of pulses, and presenting the output voltage and current waveforms on the oscilloscope screen are another advantages of this equipment. Finally, some food samples were tested that yielded the satisfactory results. PEF applying had considerable effects on potato, banana and purple cabbage. It caused increase Brix factor from 0.05 to 0.15 in potato solution. It is also so effective in extraction color material from purple cabbage. In the last experiment effects of PEF voltages on color extraction of saffron scum were surveyed (about 6% increasing yield).

Keywords: PEF, Capacitor, Switch, IGBT

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Authors: Shanmuka Naga Raju

Abstract:

This paper  presents PV system without considering transformer connected to electric grid. This is considered more economic compared to present PV system. The problem that occurs when transformer is not considered appears with a leakage current near capacitor connected to ground. Bipolar Pulse Width Modulation (BPWM) technique along with filter L-C-L configuration in the circuit is modeled to shrink the leakage current in the circuit. The DC/AC inverter is modeled using H-bridge Insulated Gate Bipolar Transistor (IGBT) module which is controlled using proposed Bipolar PWM control technique. To extract maximum power, Maximum Power Point Technique (MPPT) controller is used in this model. Voltage and current regulators are used to determine the reference voltage for the inverter from active and reactive current where reactive current is set to zero. The PLL is modeled to synchronize the measurements. The model is designed with MATLAB Simulation blocks and compared with the methods available in literature survey to show its effectiveness.

Keywords: Photovoltaic, PV, pulse width modulation, PWM, perturb and observe, phase locked loop.

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Authors: Kaumil B. Shah, Hina Chandwani

Abstract:

The modular multilevel converter (MMC) is one of the advanced topologies for medium and high-voltage applications. In high-power, high-voltage MMC, a large number of switching power devices are required. These switching power devices (IGBT) considerable switching losses. This paper analyzes the performance of different discontinuous pulse width modulation (DPWM) techniques and compares the results against a conventional carrier based pulse width modulation method, in order to reduce the switching losses of an MMC. The DPWM reference wave can be generated by adding the zero-sequence component to the original (sine) reference modulation signal. The result of the addition gives the reference signal of DPWM techniques. To minimize the switching losses of the MMC, the clamping period is controlled according to the absolute value of the output load current. No switching is generated in the clamping period so overall switching of the power device is reduced. The simulation result of the different DPWM techniques is compared with conventional carrier-based pulse-width modulation technique.

Keywords: Modular multilevel converter, discontinuous pulse width modulation, switching losses, zero-sequence voltage.

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Authors: Ahmed M. Hemeida, Wael A. Farag, Osama A. Mahgoub

Abstract:

This paper focuses on developing an integrated reliable and sophisticated model for ultra large wind turbines And to study the performance and analysis of vector control on large wind turbines. With the advance of power electronics technology, direct driven multi-pole radial flux PMSG (Permanent Magnet Synchronous Generator) has proven to be a good choice for wind turbines manufacturers. To study the wind energy conversion systems, it is important to develop a wind turbine simulator that is able to produce realistic and validated conditions that occur in real ultra MW wind turbines. Three different packages are used to simulate this model, namely, Turbsim, FAST and Simulink. Turbsim is a Full field wind simulator developed by National Renewable Energy Laboratory (NREL). The wind turbine mechanical parts are modeled by FAST (Fatigue, Aerodynamics, Structures and Turbulence) code which is also developed by NREL. Simulink is used to model the PMSG, full scale back to back IGBT converters, and the grid.

Keywords: FAST, Permanent Magnet Synchronous Generator(PMSG), TurbSim, Vector Control and Pitch Control

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Authors: S.K. Mazloomi, Nasri b. Sulaiman

Abstract:

By analyzing the sources of energy and power loss in PWM (Pulse Width Modulation) controlled drivers of water electrolysis cells, it is possible to reduce the power dissipation and enhance the efficiency of such hydrogen production units. A PWM controlled power driver is based on a semiconductor switching element where its power dissipation might be a remarkable fraction of the total power demand of an electrolysis system. Power dissipation in a semiconductor switching element is related to many different parameters which could be fitted into two main categories: switching losses and conduction losses. Conduction losses are directly related to the built, structure and capabilities of a switching device itself and indeed the conditions in which the element is handling the switching application such as voltage, current, temperature and of course the fabrication technology. On the other hand, switching losses have some other influencing variables other than the mentioned such as control system, switching method and power electronics circuitry of the PWM power driver. By analyzings the characteristics of recently developed power switching transistors from different families of Bipolar Junction Transistors (BJT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET) and Insulated Gate Bipolar Transistors (IGBT), some recommendations are made in this paper which are able to lead to achieve higher hydrogen production efficiency by utilizing PWM controlled water electrolysis cells.

Keywords: Power switch, PWM, Semiconductor switch, Waterelectrolysis

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Authors: A. Muthuramalingam, S. Himavathi

Abstract:

Harmonic pollution and low power factor in power systems caused by power converters have been of great concern. To overcome these problems several converter topologies using advanced semiconductor devices and control schemes have been proposed. This investigation is to identify a low cost, small size, efficient and reliable ac to dc converter to meet the input performance index of UPS. The performance of single phase and three phase ac to dc converter along with various control techniques are studied and compared. The half bridge converter topology with linear current control is identified as most suitable. It is simple, energy efficient because of single switch power loss and transformer-less operation of UPS. The results are validated practically using a prototype built using IGBT and analog controller. The performance for both single and three-phase system is verified. Digital implementation of closed loop control achieves higher reliability. Its cost largely depends on chosen bit precision. The minimal bit precision for optimum converter performance is identified as 16-bit with fixed-point operation. From the investigation and practical implementation it is concluded that half bridge ac – dc converter along with digital linear controller meets the performance index of UPS for single and three phase systems.

Keywords: PFC, energy efficient, half bridge, ac-dc converter, boost topology, linear current control, digital bit precision.

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Authors: Khaled A. Madi

Abstract:

Induction motors are being used in greater numbers throughout a wide variety of industrial and commercial applications because it provides many benefits and reliable device to convert the electrical energy into mechanical motion. In some application it-s desired to control the speed of the induction motor. Because of the physics of the induction motor the preferred method of controlling its speed is to vary the frequency of the AC voltage driving the motor. In recent years, with the microcontroller incorporated into an appliance it becomes possible to use it to generate the variable frequency AC voltage to control the speed of the induction motor. This study investigates the microcontroller based variable frequency power inverter. the microcontroller is provide the variable frequency pulse width modulation (PWM) signal that control the applied voltage on the gate drive, which is provides the required PWM frequency with less harmonics at the output of the power inverter. The fully controlled bridge voltage source inverter has been implemented with semiconductors power devices isolated gate bipolar transistor (IGBT), and the PWM technique has been employed in this inverter to supply the motor with AC voltage. The proposed drive system for three & single phase power inverter is simulated using Matlab/Simulink. The Matlab Simulation Results for the proposed system were achieved with different SPWM. From the result a stable variable frequency inverter over wide range has been obtained and a good agreement has been found between the simulation and hardware of a microcontroller based single phase inverter.

Keywords: Power, inverter, PWM, microcontroller.

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