Search results for: CMOS IC design
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 4851

Search results for: CMOS IC design

4821 A Continuous Time Sigma Delta Modulators Using CMOS Current Conveyors

Authors: E. Farshidi, N. Ahmadpoor

Abstract:

In this paper, a alternative structure method for continuous time sigma delta modulator is presented. In this modulator for implementation of integrators in loop filter second generation current conveyors are employed. The modulator is designed in CMOS technology and features low power consumption (<2.8mW), low supply voltage (±1.65), wide dynamic range (>65db), and with 180khZ bandwidth. Simulation results confirm that this design is suitable for data converters.

Keywords: Current Conveyor, continuous, sigma delta, MOS, modulator

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4820 Design and Analysis of Low-Power, High Speed and Area Efficient 2-Bit Digital Magnitude Comparator in 90nm CMOS Technology Using Gate Diffusion Input

Authors: Fasil Endalamaw

Abstract:

Digital magnitude comparators based on Gate Diffusion Input (GDI) implementation technique are high speed and area-efficient, and they consume less power as compared to other implementation techniques. However, they are less efficient for some logic gates and have no full voltage swing. In this paper, we made a performance comparison between the GDI implementation technique and other implementation methods, such as Static CMOS, Pass Transistor Logic (PTL), and Transmission Gate (TG) in 90 nm, 120 nm, and 180 nm CMOS technologies using BSIM4 MOS model. We proposed a methodology (hybrid implementation) of implementing digital magnitude comparators which significantly improved the power, speed, area, and voltage swing requirements. Simulation results revealed that the hybrid implementation of digital magnitude comparators show a 10.84% (power dissipation), 41.6% (propagation delay), 47.95% (power-delay product (PDP)) improvement compared to the usual GDI implementation method. We used Microwind & Dsch Version 3.5 as well as the Tanner EDA 16.0 tools for simulation purposes.

Keywords: Efficient, gate diffusion input, high speed, low power, CMOS.

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4819 0.13-μm CMOS Vector Modulator for Wireless Backhaul System

Authors: J. S. Kim, N. P. Hong

Abstract:

In this paper, a CMOS vector modulator designed for wireless backhaul system based on 802.11ac is presented. A poly phase filter and sign select switches yield two orthogonal signal paths. Two variable gain amplifiers with strongly reduced phase shift of only ±5 ° are used to weight these paths. It has a phase control range of 360 ° and a gain range of -10 dB to 10 dB. The current drawn from a 1.2 V supply amounts 20.4 mA. Using a 0.13 mm technology, the chip die area amounts 1.47x0.75 mm².

Keywords: CMOS, vector modulator, backhaul, 802.11ac.

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4818 A Unity Gain Fully-Differential 10bit and 40MSps Sample-And-Hold Amplifier in 0.18um CMOS

Authors: Sanaz Haddadian, Rahele Hedayati

Abstract:

A 10bit, 40 MSps, sample and hold, implemented in 0.18-μm CMOS technology with 3.3V supply, is presented for application in the front-end stage of an analog-to-digital converter. Topology selection, biasing, compensation and common mode feedback are discussed. Cascode technique has been used to increase the dc gain. The proposed opamp provides 149MHz unity-gain bandwidth (wu), 80 degree phase margin and a differential peak to peak output swing more than 2.5v. The circuit has 55db Total Harmonic Distortion (THD), using the improved fully differential two stage operational amplifier of 91.7dB gain. The power dissipation of the designed sample and hold is 4.7mw. The designed system demonstrates relatively suitable response in different process, temperature and supply corners (PVT corners).

Keywords: Analog Integrated Circuit Design, Sample & Hold Amplifier and CMOS Technology.

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4817 Design and Analysis of a Low Power High Speed 1 Bit Full Adder Cell Based On TSPC Logic with Multi-Threshold CMOS

Authors: Ankit Mitra

Abstract:

An adder is one of the most integral component of a digital system like a digital signal processor or a microprocessor. Being an extremely computationally intensive part of a system, the optimization for speed and power consumption of the adder is of prime importance. In this paper we have designed a 1 bit full adder cell based on dynamic TSPC logic to achieve high speed operation. A high threshold voltage sleep transistor is used to reduce the static power dissipation in standby mode. The circuit is designed and simulated in TSPICE using TSMC 180nm CMOS process. Average power consumption, delay and power-delay product is measured which showed considerable improvement in performance over the existing full adder designs.

Keywords: CMOS, TSPC, MTCMOS, ALU, Clock gating, power gating, pipelining.

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4816 Designing of Full Adder Using Low Power Techniques

Authors: Shashank Gautam

Abstract:

This paper proposes techniques like MT CMOS, POWER GATING, DUAL STACK, GALEOR and LECTOR to reduce the leakage power. A Full Adder has been designed using these techniques and power dissipation is calculated and is compared with general CMOS logic of Full Adder. Simulation results show the validity of the proposed techniques is effective to save power dissipation and to increase the speed of operation of the circuits to a large extent.

Keywords: Low Power, MT CMOS, Galeor, Lector, Power Gating, Dual Stack, Full Adder.

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4815 Versatile Dual-Mode Class-AB Four-Quadrant Analog Multiplier

Authors: Montree Kumngern, Kobchai Dejhan

Abstract:

Versatile dual-mode class-AB CMOS four-quadrant analog multiplier circuit is presented. The dual translinear loops and current mirrors are the basic building blocks in realization scheme. This technique provides; wide dynamic range, wide-bandwidth response and low power consumption. The major advantages of this approach are; its has single ended inputs; since its input is dual translinear loop operate in class-AB mode which make this multiplier configuration interesting for low-power applications; current multiplying, voltage multiplying, or current and voltage multiplying can be obtainable with balanced input. The simulation results of versatile analog multiplier demonstrate a linearity error of 1.2 %, a -3dB bandwidth of about 19MHz, a maximum power consumption of 0.46mW, and temperature compensated. Operation of versatile analog multiplier was also confirmed through an experiment using CMOS transistor array.

Keywords: Class-AB, dual-mode CMOS analog multiplier, CMOS analog integrated circuit, CMOS translinear integrated circuit.

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4814 An Efficient VLSI Design Approach to Reduce Static Power using Variable Body Biasing

Authors: Md. Asif Jahangir Chowdhury, Md. Shahriar Rizwan, M. S. Islam

Abstract:

In CMOS integrated circuit design there is a trade-off between static power consumption and technology scaling. Recently, the power density has increased due to combination of higher clock speeds, greater functional integration, and smaller process geometries. As a result static power consumption is becoming more dominant. This is a challenge for the circuit designers. However, the designers do have a few methods which they can use to reduce this static power consumption. But all of these methods have some drawbacks. In order to achieve lower static power consumption, one has to sacrifice design area and circuit performance. In this paper, we propose a new method to reduce static power in the CMOS VLSI circuit using Variable Body Biasing technique without being penalized in area requirement and circuit performance.

Keywords: variable body biasing, state saving technique, stack effect, dual V-th, static power reduction.

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4813 A Novel Low Power Digitally Controlled Oscillator with Improved linear Operating Range

Authors: Nasser Erfani Majd, Mojtaba Lotfizad

Abstract:

In this paper, an ultra low power and low jitter 12bit CMOS digitally controlled oscillator (DCO) design is presented. Based on a ring oscillator implemented with low power Schmitt trigger based inverters. Simulation of the proposed DCO using 32nm CMOS Predictive Transistor Model (PTM) achieves controllable frequency range of 550MHz~830MHz with a wide linearity and high resolution. Monte Carlo simulation demonstrates that the time-period jitter due to random power supply fluctuation is under 31ps and the power consumption is 0.5677mW at 750MHz with 1.2V power supply and 0.53-ps resolution. The proposed DCO has a good robustness to voltage and temperature variations and better linearity comparing to the conventional design.

Keywords: digitally controlled oscillator (DCO), low power, jitter; good linearity, robust

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4812 Analysis and Design of Simultaneous Dual Band Harvesting System with Enhanced Efficiency

Authors: Zina Saheb, Ezz El-Masry, Jean-François Bousquet

Abstract:

This paper presents an enhanced efficiency simultaneous dual band energy harvesting system for wireless body area network. A bulk biasing is used to enhance the efficiency of the adapted rectifier design to reduce Vth of MOSFET. The presented circuit harvests the radio frequency (RF) energy from two frequency bands: 1 GHz and 2.4 GHz. It is designed with TSMC 65-nm CMOS technology and high quality factor dual matching network to boost the input voltage. Full circuit analysis and modeling is demonstrated. The simulation results demonstrate a harvester with an efficiency of 23% at 1 GHz and 46% at 2.4 GHz at an input power as low as -30 dBm.

Keywords: Energy harvester, simultaneous, dual band, CMOS, differential rectifier, voltage boosting, TSMC 65nm.

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4811 High-Speed High-Gain CMOS OTA for SC Applications

Authors: M.Yousefi, A.Vatanjou, F.Nazeri

Abstract:

A fast settling multipath CMOS OTA for high speed switched capacitor applications is presented here. With the basic topology similar to folded-cascode, bandwidth and DC gain of the OTA are enhanced by adding extra paths for signal from input to output. Designed circuit is simulated with HSPICE using level 49 parameters (BSIM 3v3) in 0.35mm standard CMOS technology. DC gain achieved is 56.7dB and Unity Gain Bandwidth (UGB) obtained is 1.15GHz. These results confirm that adding extra paths for signal can improve DC gain and UGB of folded-cascode significantly.

Keywords: OTA (Operational Transconductance Amplifier), DC gain, Unity Gain Bandwidth (UGBW)

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4810 Design and Implementation of a 10-bit SAR ADC

Authors: Hasmayadi Abdul Majid, Rohana Musa

Abstract:

This paper presents the development of a 38.5 kS/s 10-bit low power SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and SAR digital logic to create 10 effective bits while consuming less than 7.8 mW with a 3.3 V power supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC.

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4809 Design and Optimization of Parity Generator and Parity Checker Based On Quantum-dot Cellular Automata

Authors: Santanu Santra, Utpal Roy

Abstract:

Quantum-dot Cellular Automata (QCA) is one of the most substitute emerging nanotechnologies for electronic circuits, because of lower power consumption, higher speed and smaller size in comparison with CMOS technology. The basic devices, a Quantum-dot cell can be used to implement logic gates and wires. As it is the fundamental building block on nanotechnology circuits. By applying XOR gate the hardware requirements for a QCA circuit can be decrease and circuits can be simpler in terms of level, delay and cell count. This article present a modest approach for implementing novel optimized XOR gate, which can be applied to design many variants of complex QCA circuits. Proposed XOR gate is simple in structure and powerful in terms of implementing any digital circuits. In order to verify the functionality of the proposed design some complex implementation of parity generator and parity checker circuits are proposed and simulating by QCA Designer tool and compare with some most recent design. Simulation results and physical relations confirm its usefulness in implementing every digital circuit.

Keywords: Clock, CMOS technology, Logic gates, QCA Designer, Quantum-dot Cellular Automata (QCA).

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4808 Current Controlled Current Conveyor (CCCII)and Application using 65nm CMOS Technology

Authors: Zia Abbas, Giuseppe Scotti, Mauro Olivieri

Abstract:

Current mode circuits like current conveyors are getting significant attention in current analog ICs design due to their higher band-width, greater linearity, larger dynamic range, simpler circuitry, lower power consumption and less chip area. The second generation current controlled conveyor (CCCII) has the advantage of electronic adjustability over the CCII i.e. in CCCII; adjustment of the X-terminal intrinsic resistance via a bias current is possible. The presented approach is based on the CMOS implementation of second generation positive (CCCII+), negative (CCCII-) and dual Output Current Controlled Conveyor (DOCCCII) and its application as Universal filter. All the circuits have been designed and simulated using 65nm CMOS technology model parameters on Cadence Virtuoso / Spectre using 1V supply voltage. Various simulations have been carried out to verify the linearity between output and input ports, range of operation frequency, etc. The outcomes show good agreement between expected and experimental results.

Keywords: CCCII+, CCCII-, DOCCCII, Electronic tunability, Universal filter

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4807 Adaptive Sampling Algorithm for ANN-based Performance Modeling of Nano-scale CMOS Inverter

Authors: Dipankar Dhabak, Soumya Pandit

Abstract:

This paper presents an adaptive technique for generation of data required for construction of artificial neural network-based performance model of nano-scale CMOS inverter circuit. The training data are generated from the samples through SPICE simulation. The proposed algorithm has been compared to standard progressive sampling algorithms like arithmetic sampling and geometric sampling. The advantages of the present approach over the others have been demonstrated. The ANN predicted results have been compared with actual SPICE results. A very good accuracy has been obtained.

Keywords: CMOS Inverter, Nano-scale, Adaptive Sampling, ArtificialNeural Network

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4806 Design and Analysis of an 8T Read Decoupled Dual Port SRAM Cell for Low Power High Speed Applications

Authors: Ankit Mitra

Abstract:

Speed, power consumption and area, are some of the most important factors of concern in modern day memory design. As we move towards Deep Sub-Micron Technologies, the problems of leakage current, noise and cell stability due to physical parameter variation becomes more pronounced. In this paper we have designed an 8T Read Decoupled Dual Port SRAM Cell with Dual Threshold Voltage and characterized it in terms of read and write delay, read and write noise margins, Data Retention Voltage and Leakage Current. Read Decoupling improves the Read Noise Margin and static power dissipation is reduced by using Dual-Vt transistors. The results obtained are compared with existing 6T, 8T, 9T SRAM Cells, which shows the superiority of the proposed design. The Cell is designed and simulated in TSPICE using 90nm CMOS process.

Keywords: CMOS, Dual-Port, Data Retention Voltage, 8T SRAM, Leakage Current, Noise Margin, Loop-cutting, Single-ended.

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4805 A Low-Voltage Current-Mode Wheatstone Bridge using CMOS Transistors

Authors: Ebrahim Farshidi

Abstract:

This paper presents a new circuit arrangement for a current-mode Wheatstone bridge that is suitable for low-voltage integrated circuits implementation. Compared to the other proposed circuits, this circuit features severe reduction of the elements number, low supply voltage (1V) and low power consumption (<350uW). In addition, the circuit has favorable nonlinearity error (<0.35%), operate with multiple sensors and works by single supply voltage. The circuit employs MOSFET transistors, so it can be used for standard CMOS fabrication. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique.

Keywords: Wheatstone bridge, current-mode, low-voltage, MOS.

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4804 A Very High Speed, High Resolution Current Comparator Design

Authors: Neeraj K. Chasta

Abstract:

This paper presents an idea for analog current comparison which compares input signal and reference currents with high speed and accuracy. Proposed circuit utilizes amplification properties of common gate configuration, where voltage variations of input current are amplified and a compared output voltage is developed. Cascaded inverter stages are used to generate final CMOS compatible output voltage. Power consumption of circuit can be controlled by the applied gate bias voltage. The comparator is designed and studied at 180nm CMOS process technology for a supply voltage of 3V.

Keywords: Current Mode, Comparator, High Resolution, High Speed.

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4803 Complementary Energy Path Adiabatic Logic based Full Adder Circuit

Authors: Shipra Upadhyay , R. K. Nagaria, R. A. Mishra

Abstract:

In this paper, we present the design and experimental evaluation of complementary energy path adiabatic logic (CEPAL) based 1 bit full adder circuit. A simulative investigation on the proposed full adder has been done using VIRTUOSO SPECTRE simulator of cadence in 0.18μm UMC technology and its performance has been compared with the conventional CMOS full adder circuit. The CEPAL based full adder circuit exhibits the energy saving of 70% to the conventional CMOS full adder circuit, at 100 MHz frequency and 1.8V operating voltage.

Keywords: Adiabatic, CEPAL, full adder, power clock

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4802 Design a Low Voltage- Low Offset Class AB Op-Amp

Authors: B.Gholami, S.Gholami, A.Forouzantabar, Sh.Bazyari

Abstract:

A new design approach for three-stage operational amplifiers (op-amps) is proposed. It allows to actually implement a symmetrical push-pull class-AB amplifier output stage for wellestablished three-stage amplifiers using a feedforward transconductance stage. Compared with the conventional design practice, the proposed approach leads to a significant improvement of the symmetry between the positive and the negative op-amp step response, resulting in similar values of the positive/negative settling time. The new approach proves to be very useful in order to fully exploit the potentiality allowed by the op-amp in terms of speed performances. Design examples in a commercial 0.35-μm CMOS prove the effectiveness of theproposed strategy.

Keywords: Low-voltage op amp, design , optimum design

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4801 Design Optimization Methodology of CMOS Active Mixers for Multi-Standard Receivers

Authors: S. Douss, F. Touati, M. Loulou

Abstract:

A design flow of multi-standard down-conversion CMOS mixers for three modern standards: Global System Mobile, Digital Enhanced Cordless Telephone and Universal Mobile Telecommunication Systems is presented. Three active mixer-s structures are studied. The first is based on the Gilbert cell which gives a tolerable noise figure and linearity with a low conversion gain. The second and third structures use the current bleeding and charge injection techniques in order to increase the conversion gain. An improvement of about 2 dB of the conversion gain is achieved without a considerable degradation of the other characteristics. The models used for noise figure, conversion gain and IIP3 used are studied. This study describes the nature of trade-offs inherent in such structures and gives insights that help in identifying which structure is better for given conditions.

Keywords: Active mixer, Radio-frequency transceiver, Multistandardfront end, Gilbert cell, current bleeding, charge injection.

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4800 A Novel Four-Transistor SRAM Cell with Low Dynamic Power Consumption

Authors: Arash Azizi Mazreah, Mohammad T. Manzuri Shalmani, Hamid Barati, Ali Barati

Abstract:

This paper presents a novel CMOS four-transistor SRAM cell for very high density and low power embedded SRAM applications as well as for stand-alone SRAM applications. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 20% smaller than a conventional six-transistor cell using same design rules. Also proposed cell uses two word-lines and one pair bit-line. Read operation perform from one side of cell, and write operation perform from another side of cell, and swing voltage reduced on word-lines thus dynamic power during read/write operation reduced. The fabrication process is fully compatible with high-performance CMOS logic technologies, because there is no need to integrate a poly-Si resistor or a TFT load. HSPICE simulation in standard 0.25μm CMOS technology confirms all results obtained from this paper.

Keywords: Positive feedback, leakage current, read operation, write operation, dynamic energy consumption.

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4799 Integration of CMOS Biosensor into a Polymeric Lab-on-a-Chip System

Authors: T. Brettschneider, C. Dorrer, H. Suy, T. Braun, E. Jung, R. Hoofman, M. Bründel, R. Zengerle, F. Lärmer

Abstract:

We present an integration approach of a CMOS biosensor into a polymer based microfluidic environment suitable for mass production. It consists of a wafer-level-package for the silicon die and laser bonding process promoted by an intermediate hot melt foil to attach the sensor package to the microfluidic chip, without the need for dispensing of glues or underfiller. A very good condition of the sensing area was obtained after introducing a protection layer during packaging. A microfluidic flow cell was fabricated and shown to withstand pressures up to Δp = 780 kPa without leakage. The employed biosensors were electrically characterized in a dry environment.

Keywords: CMOS biosensor, laser bonding, silicon polymer integration, wafer level packaging.

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4798 Image Sensor Matrix High Speed Simulation

Authors: Z. Feng, V. Viswanathan, D. Navarro, I. O'Connor

Abstract:

This paper presents a new high speed simulation methodology to solve the long simulation time problem of CMOS image sensor matrix. Generally, for integrating the pixel matrix in SOC and simulating the system performance, designers try to model the pixel in various modeling languages such as VHDL-AMS, SystemC or Matlab. We introduce a new alternative method based on spice model in cadence design platform to achieve accuracy and reduce simulation time. The simulation results indicate that the pixel output voltage maximum error is at 0.7812% and time consumption reduces from 2.2 days to 13 minutes achieving about 240X speed-up for the 256x256 pixel matrix.

Keywords: CMOS image sensor, high speed simulation, image sensor matrix simulation.

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4797 Low Voltage High Gain Linear Class AB CMOS OTA with DC Level Input Stage

Authors: Houda Bdiri Gabbouj, Néjib Hassen, Kamel Besbes

Abstract:

This paper presents a low-voltage low-power differential linear transconductor with near rail-to-rail input swing. Based on the current-mirror OTA topology, the proposed transconductor combines the Flipped Voltage Follower (FVF) technique to linearize the transconductor behavior that leads to class- AB linear operation and the virtual transistor technique to lower the effective threshold voltages of the transistors which offers an advantage in terms of low supply requirement. Design of the OTA has been discussed. It operates at supply voltages of about ±0.8V. Simulation results for 0.18μm TSMC CMOS technology show a good input range of 1Vpp with a high DC gain of 81.53dB and a total harmonic distortion of -40dB at 1MHz for an input of 1Vpp. The main aim of this paper is to present and compare new OTA design with high transconductance, which has a potential to be used in low voltage applications.

Keywords: Amplifier class AB, current mirror, flipped voltage follower, low voltage.

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4796 Current Mode Logic Circuits for 10-bit 5GHz High Speed Digital to Analog Converter

Authors: Zhenguo Vincent Chia, Sheung Yan Simon Ng, Minkyu Je

Abstract:

This paper presents CMOS Current Mode Logic (CML) circuits for a high speed Digital to Analog Converter (DAC) using standard CMOS 65nm process. The CML circuits have the propagation delay advantage over its conventional CMOS counterparts due to smaller output voltage swing and tunable bias current. The CML circuits proposed in this paper can achieve a maximum propagation delay of only 9.3ps, which can satisfy the stringent requirement for the 5 GHz high speed DAC application. Another advantage for CML circuits is its dynamic symmetry characteristic resulting in a reduction of an additional inverter. Simulation results show that the proposed CML circuits can operate from 1.08V to 1.3V with temperature ranging from -40 to +120°C.

Keywords: Conventional, Current Mode Logic, DAC, Decoder

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4795 Symbolic Analysis of Power Spectrum of CMOS Cross Couple Oscillator

Authors: Kittipong Tripetch

Abstract:

This paper proposes for the first time symbolic formula of the power spectrum of CMOS Cross Couple Oscillator and its modified circuit. Many principles existed to derived power spectrum in microwave textbook such as impedance, admittance parameters, ABCD, H parameters, etc. It can be compared by graph of power spectrum which methodology is the best from the point of view of practical measurement setup such as condition of impedance parameter which used superposition of current to derived (its current injection at the other port of the circuit is zero, which is impossible in reality). Four graphs of impedance parameters of cross couple oscillator are proposed. After that four graphs of scattering parameters of CMOS cross coupled oscillator will be shown.

Keywords: Optimization, power spectrum, impedance parameter, scattering parameter.

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4794 Variable Input Range Continuous-time Switched Current Delta-sigma Analog Digital Converter for RFID CMOS Biosensor Applications

Authors: Boram Kim, Shigeyasu Uno, Kazuo Nakazato

Abstract:

Continuous-time delta-sigma analog digital converter (ADC) for radio frequency identification (RFID) complementary metal oxide semiconductor (CMOS) biosensor has been reported. This delta-sigma ADC is suitable for digital conversion of biosensor signal because of small process variation, and variable input range. As the input range of continuous-time switched current delta-sigma ADC (Dynamic range : 50 dB) can be limited by using current reference, amplification of biosensor signal is unnecessary. The input range is switched to wide input range mode or narrow input range mode by command of current reference. When the narrow input range mode, the input range becomes ± 0.8 V. The measured power consumption is 5 mW and chip area is 0.31 mm^2 using 1.2 um standard CMOS process. Additionally, automatic input range detecting system is proposed because of RFID biosensor applications.

Keywords: continuous time, delta sigma, A/D converter, RFID, biosensor, CMOS

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4793 An Approach for Modeling CMOS Gates

Authors: Spyridon Nikolaidis

Abstract:

A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%.

Keywords: CMOS gate modeling, Inverter modeling, transistor current model, timing model.

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4792 Novel Linear Autozeroing Floating-gate Amplifier for Ultra Low-voltage Applications

Authors: Yngvar Berg, Mehdi Azadmehr

Abstract:

In this paper we present a linear autozeroing ultra lowvoltage amplifier. The autozeroing performed by all ULV circuits is important to reduce the impact of noise and especially avoid power supply noise in mixed signal low-voltage CMOS circuits. The simulated data presented is relevant for a 90nm TSMC CMOS process.

Keywords: Low-voltage, trans conductance amplifier, linearity, floating-gate.

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