Search results for: CMOS Inverter

Authors: Alpana Agarwal, Akhil Sharma

Abstract:

This work presents a fully differential CMOS amplifier consisting of two self-biased gain boosted inverter stages, that provides an alternative to the power hungry operational amplifier. The self-biasing avoids the use of external biasing circuitry, thus reduces the die area, design efforts, and power consumption. In the present work, regulated cascode technique has been employed for gain boosting. The Miller compensation is also applied to enhance the phase margin. The circuit has been designed and simulated in 1.8 V 0.18 µm CMOS technology. The simulation results show a high DC gain of 100.7 dB, Unity-Gain Bandwidth of 107.8 MHz, and Phase Margin of 66.7^o with a power dissipation of 286 μW and makes it suitable candidate for the high resolution pipelined ADCs.

Keywords: CMOS amplifier, gain boosting, inverter-based amplifier, self-biased inverter.

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Authors: Dipankar Dhabak, Soumya Pandit

Abstract:

This paper presents an adaptive technique for generation of data required for construction of artificial neural network-based performance model of nano-scale CMOS inverter circuit. The training data are generated from the samples through SPICE simulation. The proposed algorithm has been compared to standard progressive sampling algorithms like arithmetic sampling and geometric sampling. The advantages of the present approach over the others have been demonstrated. The ANN predicted results have been compared with actual SPICE results. A very good accuracy has been obtained.

Keywords: CMOS Inverter, Nano-scale, Adaptive Sampling, ArtificialNeural Network

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Authors: Spyridon Nikolaidis

Abstract:

A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%.

Keywords: CMOS gate modeling, Inverter modeling, transistor current model, timing model.

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Authors: Yngvar Berg, Omid Mirmotahari

Abstract:

In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented.

Keywords: Low-voltage, high-speed, NAND, NOR, CMOS.

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Authors: Imane El Karaoui, Mohammed Maaroufi, Hamid Chaikhy

Abstract:

Doubly Fed Induction Generator (DFIG) is one of the most reliable wind generator. Major problem in wind power generation is to generate Sinusoidal signal with very low THD on variable speed caused by inverter two levels used. This paper presents a multi-level inverter whose objective is to reduce the THD and the dimensions of the output filter. This work proposes a three-level NPC-type inverter, the results simulation are presented demonstrating the efficiency of the proposed inverter.

Keywords: DFIG, multilevel inverter, NPC inverter , THD, Induction machine.

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Authors: Susmita Sahoo, Madhumanti Datta, Rajib Kar

Abstract:

The resistive-inductive-capacitive behavior of long interconnects which are driven by CMOS gates are presented in this paper. The analysis is based on the ¤Ç-model of a RLC load and is developed for submicron devices. Accurate and analytical expressions for the output load voltage, the propagation delay and the short circuit power dissipation have been proposed after solving a system of differential equations which accurately describe the behavior of the circuit. The effect of coupling capacitance between input and output and the short circuit current on these performance parameters are also incorporated in the proposed model. The estimated proposed delay and short circuit power dissipation are in very good agreement with the SPICE simulation with average relative error less than 6%.

Keywords: Delay, Inverter, Short Circuit Power, ¤Ç-Model, RLCInterconnect, VLSI

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Authors: Rafia Akhter, Aminul Hoque

Abstract:

Solar Cells are destined to supply electric energy beginning from primary resources. It can charge a battery up to 12V dc. For residential use an inverter for 12V dc to 220Vac conversion is desired. For this a static DC-AC converter is necessarily inserted between the solar cells and the distribution network. This paper describes a new P.W.M. strategy for a voltage source inverter. This modulation strategy reduces the energy losses and harmonics in the P.W.M. voltage source inverter. This technique allows the P.W.M. voltage source inverter to become a new feasible solution for solar home application.

Keywords: Boost Inverter, inverter, duty cycle, PWM

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Authors: Siavash Heydarzadeh, Massoud Dousti

Abstract:

A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Inductors designed by integrated circuit occupy much smaller area, for this reason,attracted researchers attention for more than decade. In this design we used Advanced Designed System (ADS) for simulating cicuit.

Keywords: CMOS active inductor , 0.18um CMOS technology , ADS

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Authors: Zhenguo Vincent Chia, Sheung Yan Simon Ng, Minkyu Je

Abstract:

This paper presents CMOS Current Mode Logic (CML) circuits for a high speed Digital to Analog Converter (DAC) using standard CMOS 65nm process. The CML circuits have the propagation delay advantage over its conventional CMOS counterparts due to smaller output voltage swing and tunable bias current. The CML circuits proposed in this paper can achieve a maximum propagation delay of only 9.3ps, which can satisfy the stringent requirement for the 5 GHz high speed DAC application. Another advantage for CML circuits is its dynamic symmetry characteristic resulting in a reduction of an additional inverter. Simulation results show that the proposed CML circuits can operate from 1.08V to 1.3V with temperature ranging from -40 to +120°C.

Keywords: Conventional, Current Mode Logic, DAC, Decoder

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Authors: Padmanabhan Balasubramanian, R. Chinnadurai

Abstract:

This paper deals with a power-conscious ANDEXOR- Inverter type logic implementation for a complex class of Boolean functions, namely Achilles- heel functions. Different variants of the above function class have been considered viz. positive, negative and pure horn for analysis and simulation purposes. The proposed realization is compared with the decomposed implementation corresponding to an existing standard AND-EXOR logic minimizer; both result in Boolean networks with good testability attribute. It could be noted that an AND-OR-EXOR type logic network does not exist for the positive phase of this unique class of logic function. Experimental results report significant savings in all the power consumption components for designs based on standard cells pertaining to a 130nm UMC CMOS process The simulations have been extended to validate the savings across all three library corners (typical, best and worst case specifications).

Keywords: Achilles' heel functions, AND-EXOR-Inverter logic, CMOS technology, low power design.

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Authors: M. Jagabar Sathik, K. Ramani

Abstract:

In this paper family of multilevel inverter topology with reduced number of power switches is presented. The proposed inverter can generate both even and odd level. The proposed topology is suitable for symmetric structure. The proposed symmetric inverter results in reduction of power switches, power diode and gate driver circuits and also it may further minimize the installation area and cost. To prove the superiority of proposed topology is compared with conventional topologies. The performance of this symmetric multilevel inverter has been tested by computer based simulation and prototype based experimental setup for nine-level inverter is developed and results are verified.

Keywords: Cascaded H- Bridge (CHB), Multilevel Inverter (MLI), Nearest Level Modulation (NLM), Total Harmonic Distortion (THD).

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Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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Authors: M.A.A. Younis, N. A. Rahim, S. Mekhilef

Abstract:

This paper presents the design and analysis of a parallel connected inverter configuration of. The configuration consists of parallel connected three-phase dc/ac inverter. Series resistors added to the inverter output to maintain same current in each inverter of the two parallel inverters, and to reduce the circulating current in the parallel inverters to the minimum. High frequency third harmonic injection PWM (THIPWM) employed to reduce the total harmonic distortion and to make maximum use of the voltage source. DSP was used to generate the THIPWM and the control algorithm for the converter. Selected experimental results have been shown to validate the proposed system.

Keywords: Three-phase inverter, Third harmonic injection PWM, inverters parallel connection.

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Authors: Neeraj K. Chasta

Abstract:

This paper presents an idea for analog current comparison which compares input signal and reference currents with high speed and accuracy. Proposed circuit utilizes amplification properties of common gate configuration, where voltage variations of input current are amplified and a compared output voltage is developed. Cascaded inverter stages are used to generate final CMOS compatible output voltage. Power consumption of circuit can be controlled by the applied gate bias voltage. The comparator is designed and studied at 180nm CMOS process technology for a supply voltage of 3V.

Keywords: Current Mode, Comparator, High Resolution, High Speed.

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Authors: Sing-Han Wang, Shiang-Hwua Yu, Chih-Po Yang

Abstract:

Repetitive control and feedback dithering modulation are applied to a single-phase voltage source inverter, with an aim to eliminate harmonics and stabilize the inverter under load variations. The proposed control and modulation scheme comprise multiple loops of feedback, which helps improve inverter performance and robustness. Experimental results show that the designed inverter exhibits very low distortion at its output with THD of about 0.3% under different load variations.

Keywords: Feedback dithering modulation, repetitive control, state feedback, inverter, harmonics elimination.

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Authors: M. Geetha Priya, K. Baskaran, S. Srinivasan

Abstract:

Digital systems are said to be constructed using basic logic gates. These gates are the NOR, NAND, AND, OR, EXOR & EXNOR gates. This paper presents a robust three transistors (3T) based NAND and NOR gates with precise output logic levels, yet maintaining equivalent performance than the existing logic structures. This new set of 3T logic gates are based on CMOS inverter and Pass Transistor Logic (PTL). The new universal logic gates are characterized by better speed and lower power dissipation which can be straightforwardly fabricated as memory ICs for high performance computer networks. The simulation tests were performed using standard BPTM 22nm process technology using SYNOPSYS HSPICE. The 3T NAND gate is evaluated using C17 benchmark circuit and 3T NOR is gate evaluated using a D-Latch. According to HSPICE simulation in 22 nm CMOS BPTM process technology under given conditions and at room temperature, the proposed 3T gates shows an improvement of 88% less power consumption on an average over conventional CMOS logic gates. The devices designed with 3T gates will make longer battery life by ensuring extremely low power consumption.

Keywords: Low power, CMOS, pass-transistor, flash memory, logic gates.

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Authors: Hafiz Muhammad Obaid, Umais Tayyab, Shabbir Majeed Ch.

Abstract:

In this paper, a CMOS differential operational transresistance amplifier (OTRA) is presented. The amplifier is designed and implemented in a standard umc90-nm CMOS technology. The differential OTRA provides wider bandwidth at high gain. It also shows much better rise and fall time and exhibits a very good input current dynamic range of 50 to 50 μA. The OTRA can be used in many analog VLSI applications. The presented amplifier has high gain bandwidth product of 617.6 THz Ω. The total power dissipation of the presented amplifier is also very low and it is 0.21 mW.

Keywords: CMOS, differential, operational transresistance amplifier, OTRA, 90 nm, VLSI.

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Authors: Parvinder S. Sandhu, Iqbaldeep Kaur, Amit Verma, Inderpreet Kaur, Birinderjit S. Kalyan

Abstract:

This work is a proposed model of CMOS for which the algorithm has been created and then the performance evaluation of this proposition has been done. In this context, another commonly used model called ZSTT (Zero Switching Time Transient) model is chosen to compare all the vital features and the results for the Proposed Equivalent CMOS are promising. In the end, the excerpts of the created algorithm are also included

Keywords: Dual Capacitor Model, ZSTT, CMOS, SPICEMacro-Model.

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Authors: Mojtaba Ghodsi, Hamidreza Ziaifar, Morteza Mohammadzaheri, Payam Soltani

Abstract:

In this paper, the performance of a medium power (25 kW/25 kHz) hybrid inverter with a reactive transformer is investigated. To analyze the sensitivity of the inverster, the RSM technique is employed to manifest the effective factors in the inverter to minimize current passing through the Insulated Bipolar Gate Transistors (IGBTs) (current stress). It is revealed that the ratio of the axillary inductor to the effective inductance of resonant inverter (N), is the most effective parameter to minimize the current stress in this type of inverter. In practice, proper selection of N mitigates the current stress over IGBTs by five times. This reduction is very helpful to keep the IGBTs at normal temperatures.

Keywords: Analytical analysis, hybrid resonant inverter, reactive transformer, response surface method.

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Authors: Padmanabhan Balasubramanian, Karthik Anantha

Abstract:

Structural representation and technology mapping of a Boolean function is an important problem in the design of nonregenerative digital logic circuits (also called combinational logic circuits). Library aware function manipulation offers a solution to this problem. Compact multi-level representation of binary networks, based on simple circuit structures, such as AND-Inverter Graphs (AIG) [1] [5], NAND Graphs, OR-Inverter Graphs (OIG), AND-OR Graphs (AOG), AND-OR-Inverter Graphs (AOIG), AND-XORInverter Graphs, Reduced Boolean Circuits [8] does exist in literature. In this work, we discuss a novel and efficient graph realization for combinational logic circuits, represented using a NAND-NOR-Inverter Graph (NNIG), which is composed of only two-input NAND (NAND2), NOR (NOR2) and inverter (INV) cells. The networks are constructed on the basis of irredundant disjunctive and conjunctive normal forms, after factoring, comprising terms with minimum support. Construction of a NNIG for a non-regenerative function in normal form would be straightforward, whereas for the complementary phase, it would be developed by considering a virtual instance of the function. However, the choice of best NNIG for a given function would be based upon literal count, cell count and DAG node count of the implementation at the technology independent stage. In case of a tie, the final decision would be made after extracting the physical design parameters. We have considered AIG representation for reduced disjunctive normal form and the best of OIG/AOG/AOIG for the minimized conjunctive normal forms. This is necessitated due to the nature of certain functions, such as Achilles- heel functions. NNIGs are found to exhibit 3.97% lesser node count compared to AIGs and OIG/AOG/AOIGs; consume 23.74% and 10.79% lesser library cells than AIGs and OIG/AOG/AOIGs for the various samples considered. We compare the power efficiency and delay improvement achieved by optimal NNIGs over minimal AIGs and OIG/AOG/AOIGs for various case studies. In comparison with functionally equivalent, irredundant and compact AIGs, NNIGs report mean savings in power and delay of 43.71% and 25.85% respectively, after technology mapping with a 0.35 micron TSMC CMOS process. For a comparison with OIG/AOG/AOIGs, NNIGs demonstrate average savings in power and delay by 47.51% and 24.83%. With respect to device count needed for implementation with static CMOS logic style, NNIGs utilize 37.85% and 33.95% lesser transistors than their AIG and OIG/AOG/AOIG counterparts.

Keywords: AND-Inverter Graph, OR-Inverter Graph, DirectedAcyclic Graph, Low power design, Delay optimization.

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Authors: Doshi N. A., Dhobale S. B., Kakade S. R.

Abstract:

As chip manufacturing technology is suddenly on the threshold of major evaluation, which shrinks chip in size and performance, LFSR (Linear Feedback Shift Register) is implemented in layout level which develops the low power consumption chip, using recent CMOS, sub-micrometer layout tools. Thus LFSR counter can be a new trend setter in cryptography and is also beneficial as compared to GRAY & BINARY counter and variety of other applications. This paper compares 3 architectures in terms of the hardware implementation, CMOS layout and power consumption, using Microwind CMOS layout tool. Thus it provides solution to a low power architecture implementation of LFSR in CMOS VLSI.

Keywords: Chip technology, Layout level, LFSR, Pass transistor

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Authors: M. S. Sivagamasundari, P. Melba Mary

Abstract:

Multilevel inverter is a promising inverter topology for high voltage and high power applications. This inverter synthesizes several different levels of DC voltages to produce a stepped AC output that approaches the pure sine waveform. The three different topologies, diode-clamped inverter, capacitor-clamped inverter and cascaded h-bridge multilevel inverter are widely used in these multilevel inverters. Among the three topologies, cascaded h-bridge multilevel inverter is more suitable for photovoltaic applications since each PV array can act as a separate dc source for each h-bridge module. This research especially focus on photovoltaic power source as input to the system and shows the potential of a Single Phase Cascaded H-bridge Eleven level inverter governed by the fuzzy logic controller to improve the power quality by reducing the total harmonic distortion at the output voltage. Hence the efficiency of the system will be improved. Simulation using MATLAB/SIMULINK has been done to verify the performance of cascaded h-bridge eleven level inverter using sinusoidal pulse width modulation technique. The simulated output shows very favorable result.

Keywords: Multilevel inverter, Cascaded H-Bridge multilevel inverter, Total Harmonic Distortion, Photovoltaic cell, Sinusoidal pulse width modulation.

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Authors: M. Nageswara Rao

Abstract:

In this paper, a topology for high voltage gain half-bridge z-source inverter with low voltage stress on capacitors is proposed. The proposed inverter has only one impedance network. It can generate symmetric and asymmetric voltages with different magnitudes during both half-cycles. By selecting the duty cycle it can also produce conventional half-bridge inverter characteristics. It is used in special applications like, electrochemical and electro plating applications. Calculations of voltage ripple of capacitors, capacitors voltage stress inductors current ripple are presented. The proposed topology is simulated using PSCAD software and the simulated values are compared with the theoretical values.

Keywords: Half-bridge inverter, impedance network-source inverter, high voltage gain inverter, power system computer aided design.

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Authors: Nelson K. Lujara

Abstract:

The paper presents a practical three-phase PWM inverter suitable for low voltage, low rating energy efficient systems. The work in the paper is conducted with the view to establishing the significance of the loss contribution from the PWM inverter in the determination of the complete losses of a photovoltaic (PV) arraypowered induction motor drive water pumping system. Losses investigated include; conduction and switching loss of the devices and gate drive losses. It is found that the PWM inverter operates at a reasonable variable efficiency that does not fall below 92% depending on the load. The results between the simulated and experimental results for the system with or without a maximum power tracker (MPT) compares very well, within an acceptable range of 2% margin.

Keywords: Energy, Inverter, Losses, Photovoltaic.

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Authors: P. Kiruthika, K. Ramani

Abstract:

Multi-Level Inverter technology has been developed in the area of high-power medium-voltage energy scheme, because of their advantages such as devices of lower rating can be used thereby enabling the schemes to be used for high voltage applications. Reduced Total Harmonic Distortion (THD).Since the dv/dt is low; the Electromagnetic Interference from the scheme is low. To avoid the switching losses Lower switching frequencies can be used. In this paper present a survey of various topologies, control strategy and modulation techniques used by these inverters. Here the regenerative and superior topologies are also discussed.

Keywords: Cascaded H-bridge Multi-Level Inverter, Diode Clamped Multi-Level Inverter, Flying Capacitors Multi- Level Inverter, Multi-Level Inverter, Total Harmonic Distortion.

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Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter.

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Authors: Hassan Jassim Motlak

Abstract:

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to the symmetrical input stage. P-Spice simulation results are obtained using 0.18μm MIETEC CMOS process parameters and supply voltage of ±1.2V, 50μA biasing current. The p-spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, openloop gain bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/μS, THD of -63dB and DC consumption power (PC) of 2mW.

Keywords: Pseudo-OTA used CMOS CFOA, low power CFOA, high-performance CFOA, novel CFOA.

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Authors: A. Maamoun, Y. M. Alsayed, A. Shaltout

Abstract:

The paper presents a space-vector pulse width modulation (SVPWM) inverter feeding a permanent-magnet synchronous motor (PMSM). The SVPWM inverter enables to feed the motor with a higher voltage with low harmonic distortions than the conventional sinusoidal PWM inverter. The control strategy of the inverter is the voltage / frequency control method, which is based on the space-vector modulation technique. The proposed PMSM drive system involving the field-oriented control scheme not only decouples the torque and flux which provides faster response but also makes the control task easy. The performance of the proposed drive is simulated. The advantages of the proposed drive are confirmed by the simulation results.

Keywords: permanent-magnet synchronous motor, space-vectorPWM inverter, voltage/frequency control.

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Authors: Satish Kumar Peddapelli

Abstract:

This paper presents advances in pulse width modulation techniques which refers to a method of carrying information on train of pulses and the information be encoded in the width of pulses. Pulse Width Modulation is used to control the inverter output voltage. This is done by exercising the control within the inverter itself by adjusting the ON and OFF periods of inverter. By fixing the DC input voltage we get AC output voltage. In variable speed AC motors the AC output voltage from a constant DC voltage is obtained by using inverter. Recent developments in power electronics and semiconductor technology have lead improvements in power electronic systems. Hence, different circuit configurations namely multilevel inverters have became popular and considerable interest by researcher are given on them. A fast space-vector pulse width modulation (SVPWM) method for five-level inverter is also discussed. In this method, the space vector diagram of the five-level inverter is decomposed into six space vector diagrams of three-level inverters. In turn, each of these six space vector diagrams of three-level inverter is decomposed into six space vector diagrams of two-level inverters. After decomposition, all the remaining necessary procedures for the three-level SVPWM are done like conventional two-level inverter. The proposed method reduces the algorithm complexity and the execution time. It can be applied to the multilevel inverters above the five-level also. The experimental setup for three-level diode-clamped inverter is developed using TMS320LF2407 DSP controller and the experimental results are analyzed.

Keywords: Five-level inverter, Space vector pulse wide modulation, diode clamped inverter.

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Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

Abstract:

Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.

Keywords: Silicon photonics, CMOS, Integration.

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