@article{(Open Science Index):https://publications.waset.org/pdf/10000015, title = {An Approach for Modeling CMOS Gates}, author = {Spyridon Nikolaidis}, country = {}, institution = {}, abstract = {A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%. }, journal = {International Journal of Electronics and Communication Engineering}, volume = {8}, number = {12}, year = {2014}, pages = {1903 - 1906}, ee = {https://publications.waset.org/pdf/10000015}, url = {https://publications.waset.org/vol/96}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 96, 2014}, }