Search results for: oxide-based semiconductor

Authors: PoiSim Khiew, WeeSiong Chiu, ThianKhoonTan, Shahidan Radiman, Roslan Abd-Shukor, Muhammad Azmi Abd-Hamid, ChinHua Chia

Abstract:

Magnetic and semiconductor nanomaterials exhibit novel magnetic and optical properties owing to their unique size and shape-dependent effects. With shrinking the size down to nanoscale region, various anomalous properties that normally not present in bulk start to dominate. Ability in harnessing of these anomalous properties for the design of various advance electronic devices is strictly dependent on synthetic strategies. Hence, current research has focused on developing a rational synthetic control to produce high quality nanocrystals by using organometallic approach to tune both size and shape of the nanomaterials. In order to elucidate the growth mechanism, transmission electron microscopy was employed as a powerful tool in performing real time-resolved morphologies and structural characterization of magnetic (Fe3O4) and semiconductor (ZnO) nanocrystals. The current synthetic approach is found able to produce nanostructures with well-defined shapes. We have found that oleic acid is an effective capping ligand in preparing oxide-based nanostructures without any agglomerations, even at high temperature. The oleate-based precursors and capping ligands are fatty acid compounds, which are respectively originated from natural palm oil with low toxicity. In comparison with other synthetic approaches in producing nanostructures, current synthetic method offers an effective route to produce oxide-based nanomaterials with well-defined shapes and good monodispersity. The nanocystals are well-separated with each other without any stacking effect. In addition, the as-synthesized nanopellets are stable in terms of chemically and physically if compared to those nanomaterials that are previous reported. Further development and extension of current synthetic strategy are being pursued to combine both of these materials into nanocomposite form that will be used as “smart magnetic nanophotocatalyst" for industry waste water treatment.

Keywords: Metal oxide nanomaterials, Nanophotocatalyst, Organometallic synthesis, Morphology Control

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Authors: Mutabar Shah, Muhammad Hassan Sayyad, Khasan S. Karimov

Abstract:

Thin films of Nickel phthalocynine (NiPc) of different thicknesses (100, 150 and 200 nm) were deposited by thermal evaporator on glass substrates with preliminary deposited aluminum electrodes to form Al/NiPc/Al surface-type capacitive humidity sensors. The capacitance-humidity relationships of the sensors were investigated at humidity levels from 35 to 90% RH. It was observed that the capacitance value increases nonlinearly with increasing humidity level. All measurements were taken at room temperature.

Keywords: Capacitive sensor, Humidity, Nickel phthalocyanine, Organic semiconductor.

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Authors: Sara Sedaghat, Mahmood Barati, Iraj Kazeminezhad

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The ionization energy in semiconductor systems in nano scale was investigated by using effective mass approximation. By introducing the Hamiltonian of the system, the variational technique was employed to calculate the ground state and the ionization energy of a donor at the center and in the case that the impurities are randomly distributed inside a cubic quantum well. The numerical results for GaAs/GaAlAs show that the ionization energy strongly depends on the well width for both cases and it decreases as the well width increases. The ionization energy of a quantum wire was also calculated and compared with the results for the well.

Keywords: quantum well, quantum wire, quantum dot, impuritystate

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Authors: Vahid Sabermand, Yousef Hojjat, Majid Hasanzadeh

Abstract:

This paper contains 2 main parts. In the first part of paper we simulated and studied three types of electrode patterns used in various industries for suspension and handling of the semiconductor and glass and we selected the best pattern by evaluating the electrostatic force, which was comb pattern electrode. In the second part we investigated the parameters affecting the amount of electrostatic force such as the gap between surface and electrode (g), the electrode width (w), the gap between electrodes (t), the surface permittivity and electrode length and methods of improvement of adhesion force by changing these values.

Keywords: Electrostatic force, electrostatic adhesion, electrostatic chuck, electrostatic application in industry, Electroadhesive grippers.

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Authors: Ian Kree, Davina Chin Lee Yien

Abstract:

This paper presents Cost per Equivalent Wafer Out, which we find useful in wafer fab operational cost monitoring and controlling. It removes the loading and product mix effect in the cost variance analysis. The operation heads, therefore, could immediately focus on identifying areas for cost improvement. Without this, they would have to measure the impact of the loading variance and product mix variance between actual and budgeted prior to make any decision on cost improvement. Cost per Equivalent Wafer Out, thereby, increases efficiency in wafer fab operational cost monitoring and controlling.

Keywords: Cost Control, Cost Variance, Operational Expenditure, Semiconductor.

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Authors: Amin Nekoubin, Abdolamir Nekoubin

Abstract:

Vertical ZnO nanowire array films were synthesized based on aqueous method for sensing applications. ZnO nanowires were investigated structurally using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The gas-sensing properties of ZnO nanowires array films are studied. It is found that the ZnO nanowires array film sensor exhibits excellent sensing properties towards O2 and CO2 at 100 °C with the response time shorter than 5 s. High surface area / volume ratio of vertical ZnO nanowire and high mobility accounts for the fast response and recovery. The sensor response was measured in the range from 100 to 500 ppm O2 and CO2 in this study.

Keywords: Gas sensor, semiconductor, ZnO, Nanowire array

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Authors: Hari Maghfiroh, Harry Prabowo

Abstract:

WOLED is widely used as lighting for high efficacy and little power consumption. In this research, power factor testing between WOLED and fluorescent lamp to see which one is more efficient in consuming energy. Since both lamps use semiconductor components, so calculation of the power factor need to consider the effects of harmonics. Harmonic make bigger losses. The study is conducted by comparing the value of the power factor regardless of harmonics (DPF) and also by included the harmonics (TPF). The average value of DPF of fluorescent is 0.953 while WOLED is 0.972. The average value of TPF of fluorescent is 0.717 whereas WOLED is 0.933. So from the review of power factor WOLED is more energy efficient than fluorescent lamp.

Keywords: Fluorescent, harmonic, power factor, WOLED.

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Authors: Yashvir Singh, Swati Chamoli

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In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In_0.53Ga_0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.

Keywords: InGaAs, dielectric, lateral, power MOSFET.

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Authors: Zubair Ahmad, M. H. Sayyad, M. Yaseen, M. Ali

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In this work, an organic compound 5,10,15,20- Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu) is studied as an active material for thin film electronic devices. To investigate the electrical properties of TDTBPPCu, junction of TDTBPPCu with heavily doped n-Si and Al is fabricated. TDTBPPCu film was sandwiched between Al and n-Si electrodes. Various electrical parameters of TDTBPPCu are determined. The current-voltage characteristics of the junction are nonlinear, asymmetric and show rectification behavior, which gives the clue of formation of depletion region. This behavior indicates the potential of TDTBPPCu for electronics applications. The current-voltage and capacitance-voltage techniques are used to find the different electronic parameters.

Keywords: P-type, organic semiconductor, Electricalcharacteristics

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Authors: K. B. Dermenci, B. Ebin, S.Gürmen

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Noble metal participation in nanostructured semiconductor catalysts has drawn much interest because of their improved properties. Recently, it has been discussed by many researchers that Ag participation in TiO2, CuO, ZnO semiconductors showed improved photocatalytic and optical properties. In this research, Ag/ZnO nanocomposite particles were prepared by Ultrasonic Spray Pyrolysis(USP) Method. 0.1M silver and zinc nitrate aqueous solutions were used as precursor solutions. The Ag:Zn atomic ratio of the solution was selected 1:1. Experiments were taken place under constant air flow of 400 mL/min at 800°C furnace temperature. Particles were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Spectroscopy (EDS). The crystallite sizes of Ag and ZnO in composite particles are 24.6 nm, 19.7 nm respectively. Although, spherical nanocomposite particles are in a range of 300- 800 nm, these particles are formed by the aggregation of primary particles which are in a range of 20-60 nm.

Keywords: Ag/ZnO nanocatalysts, Nanotechnology, USP

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Authors: K. Easawi, M. Nabil, T. Abdallah, S. Negm, H. Talaat

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Composite nanostructures of metal core/semiconductor shell (Au/CdS) configuration were prepared using organometalic method. UV-Vis spectra for the Au/CdS colloids show initially two well separated bands, corresponding to surface plasmon of the Au core, and the exciton of CdS shell. The absorption of CdS shell is enhanced, while the Au plasmon band is suppressed as the shell thickness increases. The shell sizes were estimated from the optical spectra using the effective mass approximation model (EMA), and compared to the sizes of the Au core and CdS shell measured by high resolution transmission electron microscope (HRTEM). The changes in the absorption features are discussed in terms of gradual increase in the coupling strength of the Au core surface plasmon and the exciton in the CdS. leading to charge transfer and modification of electron oscillation in Au core.

Keywords: Nanocomposites, Plasmonics.

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Authors: Jae-Hong Kwon, Myung-Ho Chung, Tae-Yeon Oh, Hyeon-Seok Bae, Byeong-Kwon Ju

Abstract:

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

Keywords: Organic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

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Authors: Maziar Noei

Abstract:

Adsorption of a boron nitride nanotube (BNNT) was examined toward ethylacetylene (C4H6) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of ethylacetylene the pristine nanotubes is about -1.60kcal/mol. But when nanotube has been doped with Si and Al atoms, the adsorption energy of ethylacetylene molecule was increased. Calculation showed that when the nanotube is doping by Al, the adsorption energy is about - 24.19kcal/mol and also the amount of HOMO/LUMO energy gap (Eg) will reduce significantly. Boron nitride nanotube is a suitable adsorbent for ethylacetylene and can be used in separation processes ethylacetylene. It is seem that nanotube (BNNT) is a suitable semiconductor after doping, and the doped BNNT in the presence of ethylacetylene an electrical signal is generating directly and therefore can potentially be used for ethylacetylene sensors.

Keywords: Sensor, Nanotube, DFT, Ethylacetylene.

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, Kink Effect, SILVACO TCAD.

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Authors: Vasundara Patel K. S., Harsha N. Bhushan, Kiran G. Gadag, Nischal Prasad B. N., Mohmmed Haroon

Abstract:

The most widely used semiconductor memory types are the Dynamic Random Access Memory (DRAM) and Static Random Access memory (SRAM). Competition among memory manufacturers drives the need to decrease power consumption and reduce the probability of read failure. A technology that is relatively new and has not been explored is the FinFET technology. In this paper, a single cell Schmitt Trigger Based Static RAM using FinFET technology is proposed and analyzed. The accuracy of the result is validated by means of HSPICE simulations with 32nm FinFET technology and the results are then compared with 6T SRAM using the same technology.

Keywords: Schmitt trigger based SRAM, FinFET, and Static Noise Margin.

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Authors: V. Eramo, E. Miucci, A. Cianfrani, A. Germoni, M. Listanti

Abstract:

We evaluate the average energy consumption per bit in Optical Packet Switches equipped with BENES switching fabric realized in Semiconductor Optical Amplifier (SOA) technology. We also study the impact that the Amplifier Spontaneous Emission (ASE) noise generated by a transmission system has on the power consumption of the BENES switches due to the gain saturation of the SOAs used to realize the switching fabric. As a matter of example for 32×32 switches supporting 64 wavelengths and offered traffic equal to 0,8, the average energy consumption per bit is 2, 34 · 10-1 nJ/bit and increases if ASE noise introduced by the transmission systems is increased.

Keywords: Benes, Amplifier Spontaneous Emission Noise, EnergyConsumption, Optical Packet Switch.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Guo-Liang Zhang, Tai-Hong Wang

Abstract:

We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

Keywords: Photo-to-dark-current contrast ratio, Photo-current, Dark-current, Process parameter

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Authors: T. Abdallah, K. Easawi, A. Khalid, S. Negm, H. Talaat

Abstract:

Nanocrystals (NC) alloyed composite CdSxSe1-x(x=0 to 1) have been prepared using the chemical solution deposition technique. The energy band gap of these alloyed nanocrystals of approximately the same size, have been determined by scanning tunneling spectroscopy (STS) technique at room temperature. The values of the energy band gap obtained directly using STS are compared to those measured by optical spectroscopy. Increasing the molar fraction ratio x from 0 to 1 causes clearly observed increase in the band gap of the alloyed composite nanocrystal. Vegard-s law was applied to calculate the parameters of the effective mass approximation (EMA) model and the dimension obtained were compared to the values measured by STM. The good agreement of the calculated and measured values is a direct result of applying Vegard's law in the nanocomposites.

Keywords: Alloy semiconductor nanocrystals, STM.

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Authors: Jihyun Park, Tae Il Lee, Jae-Min Myoung

Abstract:

A Silver (Ag) thin film is introduced as a template and doping source for vertically aligned p–type ZnO nanorods. ZnO nanorods were grown using an ammonium hydroxide based hydrothermal process. During the hydrothermal process, the Ag thin film was dissolved to generate Ag ions in the solution. The Ag ions can contribute to doping in the wurzite structure of ZnO and the (111) grain of Ag thin film can be the epitaxial temporal template for the (0001) plane of ZnO. Hence, Ag–doped p–type ZnO nanorods were successfully grown on the substrate, which can be an electrode or semiconductor for the device application. To demonstrate the potentials of this idea, p–n diode was fabricated and its electrical characteristics were demonstrated.

Keywords: Ag–doped ZnO nanorods, Hydrothermal process, p–n homo–junction diode, p–type ZnO.

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Authors: Hanane Ondella, Pierre Ladet, David Ferrand, Pat Sloan

Abstract:

In the micro and nano-technology industry, the «clean-rooms» dedicated to manufacturing chip, are equipped with the most sophisticated equipment-tools. There use a large number of resources in according to strict specifications for an optimum working and result. The distribution of «utilities» to the production is assured by teams who use a supervision tool. The studies show the interest to control the various parameters of production or/and distribution, in real time, through a reliable and effective supervision tool. This document looks at a large part of the functions that the supervisor must assure, with complementary functionalities to help the diagnosis and simulation that prove very useful in our case where the supervised installations are complexed and in constant evolution.

Keywords: Control-Command, evolution, non regression, performances, real time, simulation, supervision.

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Authors: İsmail Aksoy, Hacı Bodur, Nihan Altıntas

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This paper introduces a boost converter with a new active snubber cell. In this circuit, all of the semiconductor components in the converter softly turns on and turns off with the help of the active snubber cell. Compared to the other converters, the proposed converter has advantages of size, number of components and cost. The main feature of proposed converter is that the extra voltage stresses do not occur on the main switches and main diodes. Also, the current stress on the main switch is acceptable level. Moreover, the proposed converter can operates under light load conditions and wide input line voltage. In this study, the operating principle of the proposed converter is presented and its operation is verified with the Proteus simulation software for a 1 kW and 100 kHz model.

Keywords: Active snubber cell, boost converter, zero current switching, zero voltage switching.

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Authors: Yin-Yann Chen, Tzu-Ling Chen

Abstract:

This study presents the case of an actual Taiwanese semiconductor assembly and testing manufacturer. Three major bottleneck manufacturing processes, namely, die bond, wire bond, and molding, are analyzed to determine how to use finite resources to achieve the optimal capacity allocation. A medium-term capacity allocation planning model is developed by considering the optimal total profit to satisfy the promised volume demanded by customers and to obtain the best migration decision among production lines for machines and tools. Finally, sensitivity analysis based on the actual case is provided to explore the effect of various parameter levels.

Keywords: Capacity planning, capacity allocation, machine migration, resource configuration.

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Authors: Kureshi Abdul Kadir, Mohd. Hasan

Abstract:

Each new semiconductor technology node brings smaller transistors and wires. Although this makes transistors faster, wires get slower. In nano-scale regime, the standard copper (Cu) interconnect will become a major hurdle for FPGA interconnect due to their high resistivity and electromigration. This paper presents the comprehensive evaluation of mixed CNT bundle interconnects and investigates their prospects as energy efficient and high speed interconnect for future FPGA routing architecture. All HSPICE simulations are carried out at operating frequency of 1GHz and it is found that mixed CNT bundle implemented in FPGAs as interconnect can potentially provide a substantial delay and energy reduction over traditional interconnects at 32nm process technology.

Keywords: CMOS, Copper Interconnect, Mixed CNT Bundle Interconnect, FPGAs.

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Authors: Kyoung Kun Lee, Soongyu Kwon, Jong Tae Kim

Abstract:

An embedded system for SEU(single event upset) test needs to be designed to prevent system failure by high-energy particles during measuring SEU. SEU is a phenomenon in which the data is changed temporary in semiconductor device caused by high-energy particles. In this paper, we present an embedded system for SRAM(static random access memory) SEU test. SRAMs are on the DUT(device under test) and it is separated from control board which manages the DUT and measures the occurrence of SEU. It needs to have considerations for preventing system failure while managing the DUT and making an accurate measurement of SEUs. We measure the occurrence of SEUs from five different SRAMs at three different cyclotron beam energies 30, 35, and 40MeV. The number of SEUs of SRAMs ranges from 3.75 to 261.00 in average.

Keywords: embedded system, single event upset, SRAM

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Authors: Yashvir Singh, Mayank Joshi

Abstract:

A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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Authors: Jatinder Kumar, Vinod Kumar

Abstract:

Ultrasonic machining (USM) is a non-traditional machining process being widely used for commercial machining of brittle and fragile materials such as glass, ceramics and semiconductor materials. However, USM could be a viable alternative for machining a tough material such as titanium; and this aspect needs to be explored through experimental research. This investigation is focused on exploring the use of ultrasonic machining for commercial machining of pure titanium (ASTM Grade-I) and evaluation of tool wear rate (TWR) under controlled experimental conditions. The optimal settings of parameters are determined through experiments planned, conducted and analyzed using Taguchi method. In all, the paper focuses on parametric optimization of ultrasonic machining of pure titanium metal with TWR as response, and validation of the optimized value of TWR by conducting confirmatory experiments.

Keywords: Ultrasonic machining, titanium, tool wear rate

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Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

Abstract:

We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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Authors: Hongjun Liu, Cunxiao Gao, Jintao Tao, Wei Zhao, Yishan Wang

Abstract:

A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses with high stability and excellent beam quality (M2<1.2) of 10 W average power 150 ps pulse duration at 1 MHz repetition rate were obtained. The central wavelength with the line width of 2.5-3 nm was tunable from 1053 nm to 1073 nm.

Keywords: Fiber laser, fiber amplifier, picosecond laser, highpower laser

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Authors: M. Kasumović, A. Hodžić, M. Tešanović

Abstract:

One way for optimum loading of overdimensioning conveyers is speed (capacity) decrement, with attention for production capabilities and demands. At conveyers which drives with three phase slip-ring induction motor, technically reasonable solution for conveyer (driving motors) speed regulation is using constant torque subsynchronous cascade with static semiconductor converter and transformer for energy reversion to the power network. In the paper is described mathematical model for parameter calculation of two-motors 6 kV subsynchronous cascade. It is also demonstrated that applying of this cascade gave several good properties, foremost in electrical energy saving, also in improving of other energy indexes, and finally that results in cost reduction of complete electrical motor drive.

Keywords: Conveyer with rubber belt, electrical motor drive, sub synchronous cascade

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Authors: Somayeh Gholami, Meysam Khakbaz

Abstract:

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (
), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K
respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.

Keywords: Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.

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