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Investigation of 5,10,15,20-Tetrakis(3-,5--Di-Tert-Butylphenyl)Porphyrinatocopper(II) for Electronics Applications

Authors: Zubair Ahmad, M. H. Sayyad, M. Yaseen, M. Ali


In this work, an organic compound 5,10,15,20- Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu) is studied as an active material for thin film electronic devices. To investigate the electrical properties of TDTBPPCu, junction of TDTBPPCu with heavily doped n-Si and Al is fabricated. TDTBPPCu film was sandwiched between Al and n-Si electrodes. Various electrical parameters of TDTBPPCu are determined. The current-voltage characteristics of the junction are nonlinear, asymmetric and show rectification behavior, which gives the clue of formation of depletion region. This behavior indicates the potential of TDTBPPCu for electronics applications. The current-voltage and capacitance-voltage techniques are used to find the different electronic parameters.

Keywords: P-type, organic semiconductor, Electricalcharacteristics

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[1] T Granlund, T Nyberg, L S Roman, M Svensson, O Inganas, Adv. Mater. 12 (2000) 269.
[2] D Pede, G Serra, D Derossi, Mater. Sci. & Eng. C 5 (1998) 289.
[3] J A Rogers, Z Bao, M Meier, A Dodabalapur, O J A Schueller, G M Whitesides, Synth. Met. 115 (2000) 5.
[4] S R Forrest, M E Thompson, Chem. Rev. 107 (2007) 923.
[5] D B Mitzi, K Chondroudis, C R Kagan, IBM J. Res. & Dev. 45 (2001) 29.
[6] C W Tang, S A Van Slyke, Appl. Phys. Lett. 51 (1987) 381.
[7] J H Burroughes, D D C Bradley, A R Brown, R N Marks, K Mackay, R H Friend, P L Burns, A B Holmes, Nature (London) 347 (1990) 539.
[8] D F Dunbar, T H Richardson, J Hutchinson, C A Hunter, Sens. Actuat. B 128 (2008) 468.
[9] M Shiraishi, A Makishima, H Inoue, K Soga, J. Non-cryst. solid 259 (1999) 165.
[10] M Saleem, M H Sayyad, K S Karimov, Z Ahmad, M Shah, M Yaseen, I Khokhar, M Ali, J. Optoelectron. Adv. Mater. 10 (2008) 1468
[11] C Di Natale, D Salimbeni, R Paolesse, A Macagnano, A DAmico, Sens. Actuat. B 65 (2000) 220.
[12] E H Rhoderick, Metal Semiconductors Contacts, Oxford Univerisity Press, 1978.
[13] M M El-Nahass, K F Abd-El-Rahman, A A M Farag, A A A Darwish, Org. Electron. 6 (2005) 129.
[14] J C Ranuarez, F J Garcia Sanchez, A Ortiz-Conde, Solid State Electron. 43 (1999) 2129.
[15] M Çakar, M Biber, M Sağlam, A Türüt, J. Polym. Sci. Part B Polym. Phys. 41 (2003) 1334.
[16] Y J Liu, H Z Yu, J. Phys. Chem. B 107 (2003) 7803.
[17] S M Sze, Physics of Semiconductor Devices, Wiley, New York, 1981.