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Measurement of I-V Characteristics of a PtSi/p-Si Schottky Barrier Diode at low Temperatures
Abstract:The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1085918Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 7659
 M.C. Li, L.C. Zhao, X.H. Zhen, X.K. Chen, "Effects of annealing processing on morphological, compositional and Schottky characterization of PtSi/Si diodes," Materials Letters., vol. 57, 2003, pp. 3735- 3740.
 H. Norde, "A modified forward I-V plot for Schottky diodes with high series resistance," J. Appl. Phys., vol. 50, no. 7, 1979, pp. 5052-5053.
 S.K. Cheung, N.W. Cheung, "Extraction of Schottky Diode Parameters from Forward Current- Voltage Characteristics," Appl. Phys. Lett., vol. 49, 1986, pp. 85-87.
 E.H. Rhoderick, Metal- Semiconductor Contacts, Clarendon, Oxford, 1988.
 S. Karatas, S. Alt─▒ndal, A.T├╝r├╝t, A. ├ûzmen, "Temperature dependence of characteristics parameters of the terminated Sn/p-Si(1 0 0) Schottky contacts," Appl. Surf. Sci., vol. 217, 2003, pp. 250-260.
 D. Donoval, M. Barus and M. Zdimal, "Analysis of I-V measurements on PtSi-Si Schottky structures in a wide temperature range," Solid-State Electron., vol. 34, 1991, pp. 1365-1373.