WASET
    Yashvir Singh and  Mayank Joshi,  Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC .   journal   = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology.
    March 2014, vol. 86(2). 369 - 372
    [viewed 02 May 2024]. Available from: https://publications.waset.org/pdf/9997887.