Search results for: metallic nanowire

Authors: Xiang Li, Zhixian Chen, Zheng Fang, Aashit Kamath, Xinpeng Wang, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to achieve compact 4F2 footprint in a 1T1R configuration. The tip of the Si nanowire (source of the transistor) serves as bottom electrode of the memory cell. Fabricated devices with nanowire diameter ~ 50nm demonstrate ultra-low current/power switching; unipolar switching with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the switching current is found to scale with nanowire diameter making the architecture promising for future scaling.

Keywords: RRAM, 1T1R, gate-all-around FET, nanowire FET, vertical MOSFETs

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Authors: J. Davoodi, F. Katouzi

Abstract:

The aim of this research was to calculate the thermal properties of Au3Ni Nanowire. The molecular dynamics (MD) simulation technique was used to obtain the effect of radius size on the energy, the melting temperature and the latent heat of fusion at the isobaric-isothermal (NPT) ensemble. The Quantum Sutton-Chen (Q-SC) many body interatomic potentials energy have been used for Gold (Au) and Nickel (Ni) elements and a mixing rule has been devised to obtain the parameters of these potentials for nanowire stats. Our MD simulation results show the melting temperature and latent heat of fusion increase upon increasing diameter of nanowire. Moreover, the cohesive energy decreased with increasing diameter of nanowire.

Keywords: Au3Ni Nanowire, Thermal properties, Molecular dynamics simulation

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Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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Authors: Z. X. Chen, T. S. Phua, X. P. Wang, G. -Q. Lo, D. -L. Kwong

Abstract:

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.

Keywords: Device simulation, MEDICI, tunneling FET (TFET), vertical silicon nanowire.

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Authors: Emanuela Paranhos Lima, Vitaly Félix Rodríguez Esquerre

Abstract:

In this work, efficient directional coupler composed of dielectric waveguides and metallic film has been analyzed in details by simulations using finite element method (FEM). The structure consists of a step-index fiber with dielectric core, silica cladding, and a metal nanowire parallel to the core. The results show that an efficient conversion of optical dielectric modes to long range plasmonic is possible. Low insertion losses in conjunction with short coupling length and a broadband operation can be achieved under certain conditions. This kind of couplers has potential applications for the design of photonic integrated circuits for signal routing between dielectric/plasmonic waveguides, sensing, lithography, and optical storage systems. A high efficient focusing of light in a very small region can be obtained.

Keywords: Directional coupler, finite element method, metallic nanowire, plasmonic, surface plasmon polariton.

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Authors: Amin Nekoubin, Abdolamir Nekoubin

Abstract:

Vertical ZnO nanowire array films were synthesized based on aqueous method for sensing applications. ZnO nanowires were investigated structurally using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The gas-sensing properties of ZnO nanowires array films are studied. It is found that the ZnO nanowires array film sensor exhibits excellent sensing properties towards O2 and CO2 at 100 °C with the response time shorter than 5 s. High surface area / volume ratio of vertical ZnO nanowire and high mobility accounts for the fast response and recovery. The sensor response was measured in the range from 100 to 500 ppm O2 and CO2 in this study.

Keywords: Gas sensor, semiconductor, ZnO, Nanowire array

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Authors: Seyed Ali Sedigh Zyabari, A. Zarifkar

Abstract:

Single photon detectors have been fabricated NbN nano wire. These detectors are fabricated from high quality, ultra high vacuum sputtered NbN thin films on a sapphire substrate. In this work a typical schematic of the nanowire Single Photon Detector structure and then driving and measurement electronic circuit are shown. The response of superconducting nanowire single photon detectors during a photo detection event, is modeled by a special electrical circuits (two circuit). Finally, current through the wire is calculated by solving equations of models.

Keywords: NbN, nanowire meander, superconducting single photon detector, kinetic inductance.

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Authors: Z. X. Chen, N. Singh, D.-L. Kwong

Abstract:

This paper presents a vertical silicon nanowire n- MOSFET integrated with a CMOS-compatible fully-silicided (FUSI) NiSi2 gate. Devices with nanowire diameter of 50nm show good electrical performance (SS < 70mV/dec, DIBL < 30mV/V, Ion/Ioff > 107). Most significantly, threshold voltage tunability of about 0.2V is shown. Although threshold voltage remains low for the 50nm diameter device, it is expected to become more positive as nanowire diameter reduces.

Keywords: NiSi , fully-silicided (FUSI) gate, vertical siliconnanowire (SiNW), CMOS compatible.

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Authors: Ajay Kushwaha, Hemen Kalita, M. Aslam

Abstract:

Post growth annealing of solution grown ZnO nanowire array is performed under controlled oxygen ambience. The role of annealing over surface defects and their consequence on dark/photo-conductivity and photosensitivity of nanowire array is investigated. Surface defect properties are explored using various measurement tools such as contact angle, photoluminescence, Raman spectroscopy and XPS measurements. The contact angle of the NW films reduces due to oxygen annealing and nanowire film surface changes from hydrophobic (96°) to hydrophilic (16°). Raman and XPS spectroscopy reveal that oxygen annealing improves the crystal quality of the nanowire films. The defect band emission intensity (relative to band edge emission, ID/IUV) reduces from 1.3 to 0.2 after annealing at 600 °C at 10 SCCM flow of oxygen. An order enhancement in dark conductivity is observed in O2 annealed samples, while photoconductivity is found to be slightly reduced due to lower concentration of surface related oxygen defects.

Keywords: Zinc Oxide, Surface defects, Photoluminescence, Photoconductivity, Photosensor and Nanowire thin film.

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Authors: Jyoti Narayan, S. Choudhary

Abstract:

Nanowire arrays of copper with uniform diameters have been synthesized by potentiostatic electrochemical metal deposition (EMD) of copper sulphate and potassium chloride solution within the nano-channels of porous Indium-Tin Oxide (ITO), also known as Tin doped Indium Oxide templates. The nanowires developed were fairly continuous with diameters ranging from 110-140 nm along the entire length. Single as well as poly-crystalline copper wires have been prepared by application of appropriate potential during the EMD process. Scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), small angle electron diffraction (SAED) and atomic force microscopy (AFM) were used to characterize the synthesized nano wires at room temperature. The electrochemical response of synthesized products was evaluated by cyclic voltammetry while surface energy analysis was carried out using a Goniometer.

Keywords: Electro-deposition, Metallic nano-wires, Nanomaterials, Template synthesis

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Authors: N. Shen, Z. X. Chen, K.D. Buddharaju, H. M. Chua, X. Li, N. Singh, G.Q Lo, D.-L. Kwong

Abstract:

In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density.

Keywords: Gate-all-around, temperature dependence, silicon nanowire

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Authors: Y. Li, K. Buddharaju, N. Singh, G. Q. Lo, S. J. Lee

Abstract:

Silicon nanowire (SiNW) based thermoelectric device (TED) has potential applications in areas such as chip level cooling/ energy harvesting. It is a great challenge however, to assemble an efficient device with these SiNW. The presence of parasitic in the form of interfacial electrical resistance will have a significant impact on the performance of the TED. In this work, we explore the effect of the electrical contact resistance on the performance of a TED. Numerical simulations are performed on SiNW to investigate such effects on its cooling performance. Intrinsically, SiNW individually without the unwanted parasitic effect has excellent cooling power density. However, the cooling effect is undermined with the contribution of the electrical contact resistance.

Keywords: Thermoelectric, silicon, nanowire, electrical contact resistance, parasitics.

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Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper electrical characteristics of various kinds of multiple-gate silicon nanowire transistors (SNWT) with the channel length equal to 7 nm are compared. A fully ballistic quantum mechanical transport approach based on NEGF was employed to analyses electrical characteristics of rectangular and cylindrical silicon nanowire transistors as well as a Double gate MOS FET. A double gate, triple gate, and gate all around nano wires were studied to investigate the impact of increasing the number of gates on the control of the short channel effect which is important in nanoscale devices. Also in the case of triple gate rectangular SNWT inserting extra gates on the bottom of device can improve the application of device. The results indicate that by using gate all around structures short channel effects such as DIBL, subthreshold swing and delay reduces.

Keywords: SNWT (silicon nanowire transistor), non equilibriumGreen's function (NEGF), double gate (DG), triple gate (TG), multiple gate, cylindrical nano wire (CW), rectangular nano wire(RW), Poisson_ Schrödinger solver, drain induced barrier lowering(DIBL).

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Authors: Y. Li, K. Buddharaju, X. P. Wang

Abstract:

The mechanism of nickel (Ni) metallization in silicon-germanium (Si_0.5Ge_0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200^oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.

Keywords: SiGe, nanowires, germanosilicide.

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Authors: Abdul-Khaliq M. Hussain, Bashir A. Tantosh, El-Sadeg A. Abdalla

Abstract:

Corrosion of metallic water pipelines buried below ground surface is a function of the nature of the surrounding soil and groundwater. This gives the importance of knowing the physical and chemical characteristics of the pipe-s surrounding environment. The corrosion of externally – unprotected metallic water pipelines, specially ductile iron pipes, in localities with aggressive soil conditions is becoming a significant problem. Anticorrosive protection for metallic water pipelines, their fittings and accessories is very important, because they may be attached by corrosion with time. The tendency of a metallic substrate to corrode is a function of the surface characteristics of the metal and of the metal/protective film interface, the physical, electrical and electrochemical properties of the film, and the nature of the environment in which the pipelines system is placed. In this work the authors have looked at corrosion problems of water pipelines and their control. The corrosive properties of groundwater and soil environments are reviewed, and parameters affecting corrosion are discussed. The purpose of this work is to provide guidelines for materials selection in water and soil environments, and how the water pipelines can be protected against metallic corrosion.

Keywords: Corrosion, Drinking Water, Metallic WaterPipelines, Polluted Water.

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Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility in tensile strained silicon, the n-type FETs with strained silicon channel have better drain current compare with the pure Si one. In this structure gate dielectric divided in two parts, we have used high-κ dielectric near the source and low-κ dielectric near the drain to reduce the short channel effects. By this structure short channel effects such as FIBL will be reduced indeed by increasing the RSiGe, ID-VD characteristics will be improved. The leakage current and transfer characteristics, the threshold-voltage (Vt), the drain induced barrier height lowering (DIBL), are estimated with respect to, gate bias (VG), RSiGe and different gate dielectrics. For short channel effects, such as DIBL, gate all around strained silicon nanowire FET have similar characteristics with the pure Si one while dual dielectrics can improve short channel effects in this structure.

Keywords: SNWT (silicon nanowire transistor), Tensile Strain, high-κ dielectric, Field Induced Barrier Lowering (FIBL), cylindricalnano wire (CW), drain induced barrier lowering (DIBL).

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Authors: Y. Kobayashi, T. Shirochi, Y. Yasuda, T. Morita

Abstract:

This paper describes a method for preparing metallic Cu nanoparticles in aqueous solution, and a metal-metal bonding technique using the Cu particles.Preparation of the Cu particle colloid solution was performed in water at room temperature in air using a copper source (0.01 M Cu(NO₃)₂), a reducing reagent (0.2 - 1.0 M hydrazine), and stabilizers (0.5×10^-3 M citric acid and 5.0×10^-3 M cetyltrimethylammonium bromide). The metallic Cu nanoparticles with sizes of ca. 60nm were prepared at all the hydrazine concentrations examined. A stage and a plate of metallic Cu were successfully bonded under annealing at 400^oC and pressurizing at 1.2 MPa for 5min in H₂ gas with help of the metallic Cu particles. A shear strength required for separating the bonded Cu substrates reached the maximum value at a hydrazine concentration of 0.8M, and it decreased beyond the concentration. Consequently, the largest shear strength of 22.9 MPa was achieved at the 0.8 M hydrazine concentration.

Keywords: Aqueous solution, Bonding, Colloid, Copper, Nanoparticle.

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Authors: Mohammed T. Hayajneh, Adel Mahmood Hassan, Moath AL-Qudah

Abstract:

Burnishing is increasingly used as a finishing operation to improve surface roughness and surface hardness. This can be achieved by applying a hard ball or roller onto metallic surfaces under pressure, in order to achieve many advantages in the metallic surface. In the present work, the feed rate, speed and force have been considered as the basic burnishing parameters to study the surface roughness and surface hardness of metallic matrix composites. The considered metal matrix composites were made from Aluminum-Magnesium-Graphite with five different weight percentage of graphite. Both effects of burnishing parameters mentioned above and the graphite percentage on the surface hardness and surface roughness of the metallic matrix composites were studied. The results of this investigation showed that the surface hardness of the metallic composites increases with the increase of the burnishing force and decreases with the increase in the burnishing feed rate and burnishing speed. The surface roughness of the metallic composites decreases with the increasing of the burnishing force, feed rate, and speed to certain values, then it starts to increase. On the other hand, the increase in the weight percentage of the graphite in the considered composites causes a decrease in the surface hardness and an increase in the surface roughness.

Keywords: Burnishing process, Al-Mg-Graphite composites, Surface hardness, Surface roughness.

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Authors: Stepan Petrosyan, Ashkhen Yesayan, Suren Nersesyan

Abstract:

We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structure utilizing as a new building block in different semiconductor devices. The potential distribution through the p-n-junction is calculated and the analytical expressions are derived to compute the depletion region widths. We show that the widths of space charge layers, surrounding the core, are the functions of core radius, which is the manifestation of so called classical size effect. The relationship between the depletion layer width and the built-in potential in the asymptotes of infinitely large core radius transforms to square-root dependence specific for conventional planar p-n-junctions. The explicit equation is derived to compute the capacitance of radial p-n-junction. The current-voltage behavior is also carefully determined taking into account the “short base" effects.

Keywords: Snanowire, p-n- junction, barrier capacitance, high injection.

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Authors: Yu-Shuai Chen , Chien-Ching Chiu , Chung-Hsin Huang, Chien-Hung Chen

Abstract:

The bit error rate (BER) performance for ultra-wide band (UWB) indoor communication with impact of metallic furniture is investigated. The impulse responses of different indoor environments for any transmitter and receiver location are computed by shooting and bouncing ray/image and inverse Fourier transform techniques. By using the impulse responses of these multipath channels, the BER performance for binary pulse amplitude modulation (BPAM) impulse radio UWB communication system are calculated. Numerical results have shown that the multi-path effect by the metallic cabinets is an important factor for BER performance. Also the outage probability for the UWB multipath environment with metallic cabinets is more serious (about 18%) than with wooden cabinets. Finally, it is worth noting that in these cases the present work provides not only comparative information but also quantitative information on the performance reduction.

Keywords: UWB, multipath, outage probability.

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Authors: Samah G. Babiker, Yong Shuai, Mohamed Osman Sid-Ahmed, Ming Xie, Mu Lei

Abstract:

The present paper studies a structure consisting of a periodic metallic grating, coated on a dielectric spacer atop an opaque metal substrate, using coherent thermal emission source in the infrared region. It has been theoretically demonstrated that by exciting surface magnetic polaritons between metallic gratings and an opaque metallic film, separated by a dielectric spacer, large emissivity peaks are almost independent of the emission angle and they can be achieved at the resonance frequencies. The reflectance spectrum of the proposed structure shows two resonances dip, which leads to a sharp emissivity peak. The relations of the reflection and absorption properties and the influence of geometric parameters on the radiative properties are investigated by rigorous coupled-wave analysis (RCWA). The proposed structure can be easily constructed, using micro/nanofabrication and can be used as the coherent thermal emission source.

Keywords: Coherent thermal emission, Polartons, Reflectance, Resonance frequency, Rigorous coupled wave analysis (RCWA).

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Authors: Sang Hoon Lee, Tae Il Lee, Su Jeong Lee, Jae Min Myoung

Abstract:

In order to manufacture short gap single Si nanowire (NW) field effect transistor (FET) by imprinting and transferring method, we introduce the method using Al2O3 sacrificial layer. The diameters of cylindrical Si NW addressed between Au electrodes by dielectrophoretic (DEP) alignment method are controlled to 106, 128, and 148 nm. After imprinting and transfer process, cylindrical Si NW is embedded in PVP adhesive and dielectric layer. By curing transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication was completed. As the diameter of embedded Si NW increases, the mobility of FET increases from 80.51 to 121.24 cm2/V·s and the threshold voltage moves from –7.17 to –2.44 V because the ratio of surface to volume gets reduced.

Keywords: Al2O3 Sacrificial transfer layer, cylindrical silicon nanowires, Dielectrophorestic alignment, Field effect transistor.

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Authors: F. N. Budiman, Y. Khan, A. A. Khan, A. Beroual, N. H. Malik, A. A. Al-Arainy

Abstract:

It is well known that metallic particles reduce the reliability of Gas-Insulated Substation (GIS) equipments by initiating partial discharge (PDs) that can lead to breakdown and complete failure of GIS. This paper investigates the characteristics of PDs caused by metallic particle adhering to the solid spacer. The PD detection and measurement were carried out by using IEC 60270 method with particles of different sizes and at different positions on the spacer surface. The results show that a particle of certain size at certain position possesses a unique PD characteristic as compared to those caused by particles of different sizes and/or at different positions. Therefore PD characteristics may be useful for the particle size and position identification.

Keywords: Particle, partial discharge, GIS, spacer.

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Authors: M. Bahgat, H. A. Hanafy, S. Lakdawala

Abstract:

Clustering phenomenon of pellets was observed frequently in shaft processes operating at higher temperatures. Clustering is a result of the growth of fibrous iron precipitates (iron whiskers) that become hooked to each other and finally become crystallized during the initial stages of metallization. If the pellet clustering is pronounced, sometimes leads to blocking inside the furnace and forced shutdown takes place. This work clarifies further the relation between metallic iron whisker growth and iron ore mineralogy. Various pellet sizes (6 – 12.0 & +12.0 mm) from three different ores (A, B & C) were (completely and partially) reduced at 985 ^oC with H₂/CO gas mixture using thermos-gravimetric technique. It was found that reducibility increases by decreasing the iron ore pellet’s size. Ore (A) has the highest reducibility than ore (B) and ore (C). Increasing the iron ore pellet’s size leads to increase the probability of metallic iron whisker formation. Ore (A) has the highest tendency for metallic iron whisker formation than ore (B) and ore (C). The reduction reactions for all iron ores A, B and C are mainly controlled by diffusion reaction mechanism.

Keywords: Shaft furnace, cluster, metallic iron whisker, mineralogy, ferrous metallurgy.

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Authors: M. H. Pol, A. Bidi, A.V. Hoseini, G.H. Liaghat

Abstract:

In this note, a theoretical model for analyzing of normal penetration of the ogive – nose projectile into metallic targets is presented .The failure is assumed to be asymmetry petalling and the analysis is performed by using the energy balance and work done .The work done consist of the work required for plastic deformation Wp, the work for transferring the matter to new position Wd and the work for bending of the petals Wb. In several studies, it has been shown that we can neglect the loss of energy by temperature. In this present study, in first, by assuming the crater formation after perforation, the value of work done is calculated during the normal penetration of conical projectiles into thin metallic targets. Then the value of residual velocity and ballistic limit of the projectile is predicated by using the energy balance. In final, theoretical and experimental results is compared.

Keywords: Ogive Projectile, normal impact, penetration, thinmetallic target.

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Authors: Farid Jamali Sheini, Dilip S. Joag, Mahendra A. More

Abstract:

A simple approach is demonstrated for growing large scale, nearly vertically aligned ZnO nanowire arrays by thermal oxidation method. To reveal effect of temperature on growth and physical properties of the ZnO nanowires, gold coated zinc substrates were annealed at 300 °C and 400 °C for 4 hours duration in air. Xray diffraction patterns of annealed samples indicated a set of well defined diffraction peaks, indexed to the wurtzite hexagonal phase of ZnO. The scanning electron microscopy studies show formation of ZnO nanowires having length of several microns and average of diameter less than 500 nm. It is found that the areal density of wires is relatively higher, when the annealing is carried out at higher temperature i.e. at 400°C. From the field emission studies, the values of the turn-on and threshold field, required to draw emission current density of 10 μA/cm2 and 100 μA/cm2 are observed to be 1.2 V/μm and 1.7 V/μm for the samples annealed at 300 °C and 2.9 V/μm and 3.7 V/μm for that annealed at 400 °C, respectively. The field emission current stability, investigated over duration of more than 2 hours at the preset value of 1 μA, is found to be fairly good in both cases. The simplicity of the synthesis route coupled with the promising field emission properties offer unprecedented advantage for the use of ZnO field emitters for high current density applications.

Keywords: ZnO, Nanowires, Thermal oxidation, FieldEmission.

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Authors: Shabnam Ladan, M. S. Abrishamian

Abstract:

In this paper we have developed a FDTD simulation code which can treat wave propagation of a monopole antenna in a metallic case which covers with PML, and performed a series of three dimensional FDTD simulations of electromagnetic wave propagation in this space .We also provide a measurement set up in antenna lab and fortunately the simulations and measurements show good agreement. According to simulation and measurement results, we confirmed that the computer program which had been written in FORTRAN, works correctly.

Keywords: FDTD, EMC, monopole antenna.

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Authors: Emrah Ersoy, Yusuf Özçatalbas

Abstract:

The aim of this study is to investigate formability of Al based closed cell metallic foams at high temperature. The foam specimens with rectangular section were produced from AlMg1Si0.6TiH20.8 alloy preform material. Bending and free bending tests based on gravity effect were applied to foam specimens at high temperatures. During the tests, the time-angular deformation relationships with various temperatures were determined. Deformation types formed in cell walls were investigated by means of Scanning Electron Microscopy (SEM) and optical microscopy. Bending deformation about 90° was achieved without any defect at high temperatures. The importance of a critical temperature and deformation rate was emphasized in maintaining the deformation. Significant slip lines on surface of cell walls at tensile zones of bending specimen were observed. At high strain rates, the microcrack formation in boundaries of elongated grains was determined.

Keywords: Al alloy, Closed cell, hot deformation, metallic foam.

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Authors: Gul Afreen, Sreedevi Upadhyayula, Mahendra K. Sunkara

Abstract:

One-dimensional (1D) nanostructures like nanowires, nanotubes, and nanorods find variety of practical application owing to their unique physico-chemical properties. In this work, TiO₂ nanowires were synthesized by direct oxidation of titanium particles in a unique microwave plasma jet reactor. The prepared TiO₂ nanowires manifested the flexible features, and were characterized by using X-ray diffraction, Brunauer-Emmett-Teller (BET) surface area analyzer, UV-Visible and FTIR spectrophotometers, Scanning electron microscope, and Transmission electron microscope. Further, the photodegradation efficiency of these nanowires were tested against toxic organic dye like methylene blue (MB) and the results were compared with the commercial TiO₂. It was found that TiO₂ nanowires exhibited superior photocatalytic performance (89%) as compared to commercial TiO₂ (75%) after 60 min of reaction. This is attributed to the lower recombination rate and increased interfacial charge transfer in TiO₂ nanowire. Pseudo-first order kinetic modelling performed with the experimental results revealed that the rate constant of photodegradation in case of TiO₂ nanowire was 1.3 times higher than that of commercial TiO₂. Superoxide radical (O₂˙⁻) was found to be the major contributor in the photodegradation mechanism. Based on the trapping experiments, a plausible mechanism of the photocatalytic reaction is discussed.

Keywords: Heterogeneous catalysis, photodegradation, reactive oxygen species, TiO2 nanowires.

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Authors: Isik Cetintav, Cenk Misirli, Yilmaz Can

Abstract:

This work investigates upsetting of the tri-metallic cylindrical billets both experimentally and analytically with a reduction ratio 30%. Steel, brass, and copper are used for the outer and outmost rings and aluminum for the inner core. Two different models have been designed to show material flow and the cavity took place over the two interfaces during forming after this reduction ratio. Each model has an outmost ring material as steel. Model 1 has an outer ring between the outmost ring and the solid core material as copper and Model 2 has a material as brass. Solid core is aluminum for each model. Billets were upset in press machine by using parallel flat dies. Upsetting load was recorded and compared for models and single billets. To extend the tests and compare with experimental procedure to a wider range of inner core and outer ring geometries, finite element model was performed. ABAQUS software was used for the simulations. The aim is to show how contact between outmost ring, outer ring and the inner core are carried on throughout the upsetting process. Results have shown that, with changing in height, between outmost ring, outer ring and inner core, the Model 1 and Model 2 had very good interaction, and the contact surfaces of models had various interface behaviour. It is also observed that tri-metallic materials have lower weight but better mechanical properties than single materials. This can give an idea for using and producing these new materials for different purposes.

Keywords: Tri-metallic, upsetting, copper, brass, steel, aluminum.

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