Search results for: Device simulation

Authors: Hyun-Young Kim, Chung-Kwang Lee, Han-Hee Cho, Sang-Woon Cho, Yong-Seo Koo

Abstract:

In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp.

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Authors: Bu Jianhui, Bi Jinshun, Liu Mengxin, Luo Jiajun, Han Zhengsheng

Abstract:

The floating body effect is a serious problem for the PDSOI MOSFET, and the H-gate layout is frequently used as the body contact to eliminate this effect. Unfortunately, most of the standard commercial SOI MOSFET model is for the device with finger gate, the necessity of the new models for the H-gate device arises. A simulation model for the H-gate PDSOI MOSFET is proposed based on the 0.35μm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and then the model is well verified by the ring-oscillator.

Keywords: PDSOI H-gate Device model Body contact.

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Authors: P. Valdez, M. Pelissero, A. Haim, F. Muiño, F. Galia, R. Tula

Abstract:

As a result of the studies performed on the wave energy resource worldwide, a research project was set up to harvest wave energy for its conversion into electrical energy. Within this framework, a theoretical model of the electromechanical energy harvesting system, developed with MATLAB’s Simulink software, will be provided. This tool recreates the site conditions where the device will be installed and offers valuable information about the amount of energy that can be harnessed. This research provides a deeper understanding of the utilization of wave energy in order to improve the efficiency of a 1:1 scale prototype of the device.

Keywords: Electromechanical device, modeling, renewable energy, sea wave energy, simulation.

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Authors: M. A. Aziz, M. A. Imteaz, J. Naser, D. I. Phillips

Abstract:

Some of the major concerns regarding sewer overflows to receiving water bodies include serious environmental, aesthetic and public health problems. A noble self-cleansing sewer overflow screening device having a sewer overflow chamber, a rectangular tank and a slotted ogee weir to capture the gross pollutants has been investigated. Computational Fluid Dynamics (CFD) techniques are used to simulate the flow phenomena with two different inlet orientations; parallel and perpendicular to the weir direction. CFD simulation results are compared with analytical results. Numerical results show that the flow is not uniform (across the width of the inclined surface) near the top of the inclined surface. The flow becomes uniform near the bottom of the inclined surface, with significant increase of shear stress. The simulation results promises for an effective and efficient self-cleansing sewer overflow screening device by comparing hydrodynamic results.

Keywords: Hydrodynamic Characteristics, Ogee Spillway, Screening, Sewer Overflow Device.

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Authors: Yashvir Singh, Mayank Joshi

Abstract:

A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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Authors: S. Meikandasivam, Rajesh Kumar Nema, Shailendra Kumar Jain

Abstract:

A basic conceptual study of TCSC device on Simulink is a teaching aid and helps in understanding the rudiments of the topic. This paper thus stems out from basics of TCSC device and analyzes the impedance characteristics and associated single & multi resonance conditions. The Impedance characteristics curve is drawn for different values of inductance in MATLAB using M-files. The study is also helpful in estimating the appropriate inductance and capacitance values which have influence on multi resonance point in TCSC device. The capacitor voltage, line current, thyristor current and capacitor current waveforms are discussed briefly as simulation results. Simulink model of TCSC device is given and corresponding waveforms are analyzed. The subsidiary topics e.g. power oscillation damping, SSR mitigation and transient stability is also brought out.

Keywords: TCSC device, Impedance characteristics, Resonance point, Simulink model

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Authors: Fu Hao, Sun Gang, Tang Laiying, Cui Junfeng

Abstract:

To solve the quick and accurate level-adjusting problem in the process of spacecraft precise mating, automatic leveling and equalizing hoist device for spacecraft is developed. Based on lifting point adjustment by utilizing XY-workbench, the leveling and equalizing controller by a self-adaptive control algorithm is proposed. By simulation analysis and lifting test using engineering prototype, validity and reliability of the hoist device is verified, which can meet the precision mating requirements of practical applications for spacecraft.

Keywords: automatic leveling and equalizing, hoist device, lifting point adjustment, self-adaptive control

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Authors: Sangeeta Singh, Pankaj Kumar, P. N. Kondekar

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In this paper, the transient device performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor (TGF) and unity gain cut-off frequency (fT ) and subthreshold slope (SS) of the GI-JLT and GAA-JLT have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

Keywords: Gate-inside junctionless transistor GI-JLT, Gate-all-around junctionless transistor GAA-JLT, propagation delay, power delay product.

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Authors: Samrat Vikramaditya Tiwari, Atul Sewaiwar, Yeon-Ho Chung

Abstract:

Device-to-device (D2D) communication is considered a promising technique to provide wireless peer-to-peer communication services. Due to increasing demand on mobile services, available spectrum for radio frequency (RF) based communications becomes scarce. Recently, visible light communications (VLC) has evolved as a high speed wireless data transmission technology for indoor environments with abundant available bandwidth. In this paper, a novel VLC based D2D communication that provides wireless peer-to-peer communication is proposed. Potential low operating power devices for an efficient D2D communication over increasing distance of separation between devices is analyzed. Optical repeaters (OR) are also proposed to enhance the performance in an environment where direct D2D communications yield degraded performance. Simulation results show that VLC plays an important role in providing efficient D2D communication up to a distance of 1 m between devices. It is also found that the OR significantly improves the coverage distance up to 3.5 m.

Keywords: Visible light communication, light emitting diode, device-to-device, optical repeater.

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Authors: Shigenori Togashi, Yukako Asano

Abstract:

We developed an effective microfluidic device for photoreactions with low reflectance and good heat conductance. The performance of this microfluidic device was tested by carrying out a photoreactive synthesis of benzopinacol and acetone from benzophenone and 2-propanol. The yield reached 36% with an irradiation time of 469.2 s and was improved by more than 30% when compared to the values obtained by the batch method. Therefore, the microfluidic device was found to be effective for improving the yields of photoreactions.

Keywords: Microfluidic device, Photoreaction, Benzophenone, Black Aluminum Oxide, Detection, Yield Improvement.

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Authors: Bo Bae Song, Byung Seok Lee, Hyun Young Kim, Chung Kwang Lee, Yong Seo Koo

Abstract:

This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).

Keywords: ESD, SCR, Holding voltage, Latch-up.

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Authors: Li Yuan, Weizhu Wang, Kean Boon Lee, Haifeng Sun, Susai Lawrence Selvaraj, Shane Todd, Guo-Qiang Lo

Abstract:

In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important roles on the gate leakage blocking and off-state breakdown voltage enhancement.

Keywords: AlGaN/GaN, HEMT, Physical mechanism, TCAD simulation

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Authors: N. Shen, Z. X. Chen, K.D. Buddharaju, H. M. Chua, X. Li, N. Singh, G.Q Lo, D.-L. Kwong

Abstract:

In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density.

Keywords: Gate-all-around, temperature dependence, silicon nanowire

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Authors: Sunglim Lee, Susumu Fujii, Koji Okamura

Abstract:

Smart grid is a new approach for electric power grid that uses information and communications technology to control the electric power grid. Smart grid provides real-time control of the electric power grid, controlling the direction of power flow or time of the flow. Control devices are installed on the power lines of the electric power grid to implement smart grid. The number of the control devices should be determined, in relation with the area one control device covers and the cost associated with the control devices. One approach to determine the number of the control devices is to use the data on the surplus power generated by home solar generators. In current implementations, the surplus power is sent all the way to the power plant, which may cause power loss. To reduce the power loss, the surplus power may be sent to a control device and sent to where the power is needed from the control device. Under assumption that the control devices are installed on a lattice of equal size squares, our goal is to figure out the optimal spacing between the control devices, where the power sharing area (the area covered by one control device) is kept small to avoid power loss, and at the same time the power sharing area is big enough to have no surplus power wasted. To achieve this goal, a simulation using landscape ecology method is conducted on a sample area. First an aerial photograph of the land of interest is turned into a mosaic map where each area is colored according to the ratio of the amount of power production to the amount of power consumption in the area. The amount of power consumption is estimated according to the characteristics of the buildings in the area. The power production is calculated by the sum of the area of the roofs shown in the aerial photograph and assuming that solar panels are installed on all the roofs. The mosaic map is colored in three colors, each color representing producer, consumer, and neither. We started with a mosaic map with 100 m grid size, and the grid size is grown until there is no red grid. One control device is installed on each grid, so that the grid is the area which the control device covers. As the result of this simulation we got 350m as the optimal spacing between the control devices that makes effective use of the surplus power for the sample area.

Keywords: Landscape ecology, IT, smart grid, aerial photograph, simulation.

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Authors: M. Paroncini, F. Corvaro, G. Nardini, S. Pistolesi

Abstract:

A lightpipe is an about 99 percent specular reflective mirror pipe or duct that is used for the transmission of the daylight from the outside into a building. The lightpipes are usually used in the daylighting buildings, in the residential, industrial and commercial sectors. This paper is about the performances of a lightpipe installed in a laboratory (3 m x 2.6 m x 3 m) without windows. The aim is to analyse the luminous intensity distribution for several sky/sun conditions. The lightpipe was monitored during the year 2006. The lightpipe is 1 m long and the diameter of the top collector and of the internal diffuser device is 0.25 m. In the laboratory there are seven illuminance sensors: one external is located on the roof of the laboratory and six internal sensors are connected to a data acquisition system. The internal sensors are positioned under the internal diffusive device at an height of 0.85 m from the floor to simulate a working plane. The numerical data are obtained through a simulation software. This paper shows the comparison between the experimental and numerical results concerning the behavior of the lightpipe.

Keywords: Daylighting, Desktop Radiance, Lightpipe.

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Authors: Srikanta Bose, S.K. Mazumder

Abstract:

In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-diode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.

Keywords: 4H-SiC, Boost converter, Optical triggering, Power semiconductor device, thyristor.

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Authors: Lv Shizeng, Han Xiao, Zhang Yi, Ding Wenjing

Abstract:

The lunar sample storage device is mainly used for the preparation of the lunar samples, observation, physical analysis and other work. The lunar samples and operating equipment are placed directly inside the storage device. The inside of the storage device is a high purity nitrogen environment to ensure that the sample is not contaminated by the Earth's environment. In order to ensure that the water and oxygen indicators in the storage device meet the sample requirements, a dynamic gas cycle is required between the storage device and the external purification equipment. However, the internal gas disturbance in the storage device can affect the operation of the sample. In this paper, the storage device model is established, and the tetrahedral mesh is established by Tetra/Mixed method. The influence of different inlet position and gas flow on the internal flow field disturbance is calculated, and the disturbed flow area should be avoided during the sampling operation.

Keywords: Lunar samples, gas disturbance, storage device, characteristic analysis.

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Authors: Muhibul Haque Bhuyan

Abstract:

This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO₂), aluminum silicate (Al₂SiO₅), silicon nitride (Si₃N₄), alumina (Al₂O₃), hafnium silicate (HfSiO₄), tantalum pentoxide (Ta₂O₅), hafnium dioxide (HfO₂), zirconium dioxide (ZrO₂), and lanthanum oxide (La₂O₃) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

Keywords: Linear symmetric pocket profile, pocket implanted n-MOS Device, model, impact of gate material, insulator thickness.

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Authors: Amir A. N, Fadzilan A. M, Baskaran G.

Abstract:

In this paper, we proposed an invention of an accessory into a communication device that will help humans to be connected universally. Generally, this device will be made up of crystal and will combine many technologies that will enable the user to run various applications and software anywhere and everywhere. Bringing up the concept of from being user friendly, we had used the crystal as the main material of the device that will trap the surrounding lights to produce projection of its screen. This leads to a lesser energy consumption and allows smaller sized battery to be used, making the device less bulky. Additionally, we proposed the usage of micro batteries as our energy source. Thus, researches regarding crystal were made along with explanations in details of specification and function of the technology used in the device. Finally, we had also drawn several views of the invention from different sides to be visualized.

Keywords: Crystal, Communication Technology, Future concept device, Micro batteries.

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Authors: S. Farag, A. Kupeman

Abstract:

In this paper, design of solid-state battery/supercapacitor emulator based on dc-dc boost converter is described. The emulator mimics charging behavior of any storage device based on a predefined behavior set by the user. The device is operated by a two-level control structure: high-level emulating controller and low- level input voltage controller. Simulation and experimental results are shown to demonstrate the emulator operation.

Keywords: Battery, Charger, Energy, Storage, Supercapacitor.

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Authors: S.A.M. Isa, M.S.M. Rahim, M.D. Kasmuni, D. Daman

Abstract:

Recently, there are significant improvements in the capabilities of mobile devices; rendering large terrain is tedious because of the constraint in resources of mobile devices. This paper focuses on the implementation of terrain rendering on mobile device to observe some issues and current constraints occurred. Experiments are performed using two datasets with results based on rendering speed and appearance to ascertain both the issues and constraints. The result shows a downfall of frame rate performance because of the increase of triangles. Since the resolution between computer and mobile device is different, the terrain surface on mobile device looks more unrealistic compared to on a computer. Thus, more attention in the development of terrain rendering on mobile devices is required. The problems highlighted in this paper will be the focus of future research and will be a great importance for 3D visualization on mobile device.

Keywords: Mobile Device, Mobile Rendering, OpenGL ES, Terrain Rendering.

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Authors: Qiong He, S. Thomas Ng

Abstract:

Upgrading the thermal performance of building envelope of existing residential buildings is an effective way to reduce heat gain or heat loss. Overhang device is a common solution for building envelope improvement as it can cut down solar heat gain and thereby can reduce the energy used for space cooling in summer time. Despite that, overhang can increase the demand for indoor heating in winter due to its function of lowering the solar heat gain. Obviously, overhang has different impacts on energy use in different climatic zones which have different energy demand. To evaluate the impact of overhang device on building energy performance under different climates of China, an energy analysis model is built up in a computer-based simulation program known as DesignBuilder based on the data of a typical high-rise residential building. The energy simulation results show that single overhang is able to cut down around 5% of the energy consumption of the case building in the stand-alone situation or about 2% when the building is surrounded by other buildings in regions which predominantly rely on space cooling though it has no contribution to energy reduction in cold region. In regions with cold summer and cold winter, adding overhang over windows can cut down around 4% and 1.8% energy use with and without adjoining buildings, respectively. The results indicate that overhang might not an effective shading device to reduce the energy consumption in the mixed climate or cold regions.

Keywords: Overhang, energy analysis, computer-based simulation, high-rise residential building, mutual shading, climate.

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Authors: Yong Seo Koo, Dong Su Kim, Byung Seok Lee, Won Suk Park, Bo Bea Song

Abstract:

This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

Keywords: ESD (Electro-Static Discharge), ESD protection device, SCR (Silicon Controlled Rectifier), Latch-up

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Authors: Mohammad Reza Zamani Kouhpanji

Abstract:

This paper presents a MEMS/NEMS device for fatigue and fracture characterization of nanomaterials. This device can apply static loads, cyclic loads, and their combinations in nanomechanical experiments. It is based on the electromagnetic force induced between paired parallel wires carrying electrical currents. Using this concept, the actuator and sensor parts of the device were designed and analyzed while considering the practical limitations. Since the PWCC device only uses two wires for actuation part and sensing part, its fabrication process is extremely easier than the available MEMS/NEMS devices. The total gain and phase shift of the MEMS/NEMS device were calculated and investigated. Furthermore, the maximum gain and sensitivity of the MEMS/NEMS device were studied to demonstrate the capability and usability of the device for wide range of nanomaterials samples. This device can be readily integrated into SEM/TEM instruments to provide real time study of the mechanical behaviors of nanomaterials as well as their fatigue and fracture properties, softening or hardening behaviors, and initiation and propagation of nanocracks.

Keywords: Sensors and actuators, MEMS/NEMS devices, fatigue and fracture nanomechanical testing device, static and cyclic nanomechanical testing device.

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Authors: L. Grinis, V. Haslavsky

Abstract:

Stuck-pipe in drilling operations is one of the most pressing and expensive problems in the oil industry. This paper describes a computational simulation and an experimental study of the hydrodynamic vibrator, which may be used for liquidation of stuck-pipe problems during well drilling. The work principle of the vibrator is based upon the known phenomena of Vortex Street of Karman and the resulting generation of vibrations. We will discuss the computational simulation and experimental investigations of vibrations in this device. The frequency of the vibration parameters has been measured as a function of the wide range Reynolds Number. The validity of the computational simulation and of the assumptions on which it is based has been proved experimentally. The computational simulation of the vibrator work and its effectiveness was carried out using FLUENT software. The research showed high degree of congruence with the results of the laboratory tests and allowed to determine the effect of the granular material features upon the pipe vibration in the well. This study demonstrates the potential of using the hydrodynamic vibrator in a well drilling system.

Keywords: Drilling, stuck-pipe, vibration, vortex shedding.

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Authors: A. Douara, N. Kermas, B. Djellouli

Abstract:

In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.

Keywords: AlGaN/GaN, centroid capacitance, gate capacitance, HEMT, quantum capacitance.

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Authors: G. Aloisio, L. T. De Paolis, A. De Mauro, A. Mongelli

Abstract:

One of the essential requirements of a realistic surgical simulator is to reproduce haptic sensations due to the interactions in the virtual environment. However, the interaction need to be performed in real-time, since a delay between the user action and the system reaction reduces the immersion sensation. In this paper, a prototype of a coronary stent implant simulator is present; this system allows real-time interactions with an artery by means of a specific haptic device. To improve the realism of the simulation, the building of the virtual environment is based on real patients- images and a Web Portal is used to search in the geographically remote medical centres a virtual environment with specific features in terms of pathology or anatomy. The functional architecture of the system defines several Medical Centres in which virtual environments built from the real patients- images and related metadata with specific features in terms of pathology or anatomy are stored. The searched data are downloaded from the Medical Centre to the Training Centre provided with a specific haptic device and with the software necessary both to manage the interaction in the virtual environment. After the integration of the virtual environment in the simulation system it is possible to perform training on the specific surgical procedure.

Keywords: Medical Simulation, Web Portal, Virtual Reality.

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Authors: H. M. Usman Sani, Shafaat A. Bazaz, Nisar Ahmed

Abstract:

In this paper, Fabless Prototyping Methodology is introduced for the design and analysis of MEMS devices. Conventionally Finite Element Analysis (FEA) is performed before system level simulation. In our proposed methodology, system level simulation is performed earlier than FEA as it is computationally less extensive and low cost. System level simulations are based on equivalent behavioral models of MEMS device. Electrostatic actuation based MEMS Microgripper is chosen as case study to implement this methodology. This paper addresses the behavioral model development and simulation of actuator part of an electrostatically actuated Microgripper. Simulation results show that the actuator part of Microgripper works efficiently for a voltage range of 0-45V with the corresponding jaw displacement of 0-4.5425μm. With some minor changes in design, this range can be enhanced to 15μm at 85V.

Keywords: MEMS Actuator, Behavioral Model, CoventorWare, Microgripper, SOIMUMPs, System Level Simulation

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Authors: A. Bumbová, J. Kellner, Z. Večeřa, V. Kahle, J. Navrátil

Abstract:

The construction of original functional sample of the portable device for fast analysis of energetic materials has been described in the paper. The portable device consisting of two parts – an original miniaturized microcolumn liquid chromatograph and a unique chemiluminescence detector – has been proposed and realized. In a very short time, this portable device is capable of identifying selectively most of military nitramine- and nitroesterbased explosives as well as inorganic nitrates occurring in trace concentrations in water or in soil. The total time required for the identification of extracts is shorter than 8 minutes.

Keywords: Chemiluminescence, microcolumn liquid chromatograph, nitramines, nitroesters, portable device.

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Authors: P. Vazan, P. Tanuska

Abstract:

The paper provides the basic overview of simulation optimization. The procedure of its practical using is demonstrated on the real example in simulator Witness. The simulation optimization is presented as a good tool for solving many problems in real praxis especially in production systems. The authors also characterize their own experiences and they mention the strengths and weakness of simulation optimization.

Keywords: discrete event simulation, simulation optimization, Witness

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