Theory of Nanowire Radial p-n-Junction
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Theory of Nanowire Radial p-n-Junction

Authors: Stepan Petrosyan, Ashkhen Yesayan, Suren Nersesyan

Abstract:

We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structure utilizing as a new building block in different semiconductor devices. The potential distribution through the p-n-junction is calculated and the analytical expressions are derived to compute the depletion region widths. We show that the widths of space charge layers, surrounding the core, are the functions of core radius, which is the manifestation of so called classical size effect. The relationship between the depletion layer width and the built-in potential in the asymptotes of infinitely large core radius transforms to square-root dependence specific for conventional planar p-n-junctions. The explicit equation is derived to compute the capacitance of radial p-n-junction. The current-voltage behavior is also carefully determined taking into account the “short base" effects.

Keywords: Snanowire, p-n- junction, barrier capacitance, high injection.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1077205

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[1] E. C. Garnett, P. Yang, "Silicon nanowire radial p-n junction solar cells," J. Am. Chem. Soc., vol. 130, no. 29, pp. 9224-9225, Jul. 2008.
[2] C. Soci, A. Zhang, X.-Y. Bao, H. Kim, Y. Lo, D. Wang, "Nanowire photodetectors," J. Nanoscience and Nanotechnology, vol. 10, no. 3, pp. 1430-1449, Mar. 2010.
[3] Th. J. Kempa, B. Tian, D. R. Kim, J. Hu, X. Zheng, Ch. M. Lieber, "Single and tandem axial p-i-n nanowire photrovoltaic devices," Nano Lett., vol. 8, no. 10, pp. 3456-3460, Sept. 2008.
[4] C. Colombo, M. Heib, M. Gratzel, A. Fontcuberta i Morral, "Gallium arsenide p-i-n radial structures for photovoltaic applications," Appl. Phys. Lett., vol. 94, no. 17, p. 173108, April 2009.
[5] V. Schmidt, H. Rien, S. Senz, S. Karg, W. Riess, U. Gosele, "Realization of a silicon nanowire vertical surround-gate field-effect transistor," Small, vol. 2, no. 1, pp. 85-88, Jan. 2006.
[6] B. M. Kayes, H. A. Atwater, N. S. Lewis, "Comparison of the device physics principles of planar and radial p-n-junction nanorod solar cells," J. Appl. Phys., vol. 97, no. 11, p. 114302, May 2005.
[7] G. E. Pikus, Basics of Theory of Semiconductor Devices. Moscow: Nauka, 1965, pp. 173-182.