@article{(Open Science Index):https://publications.waset.org/pdf/16697,
	  title     = {Ni Metallization on SiGe Nanowire},
	  author    = {Y. Li and  K. Buddharaju and  X. P. Wang},
	  country	= {},
	  institution	= {},
	  abstract     = {The mechanism of nickel (Ni) metallization in silicon-germanium (Si0.5Ge0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.
},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {7},
	  number    = {9},
	  year      = {2013},
	  pages     = {1220 - 1222},
	  ee        = {https://publications.waset.org/pdf/16697},
	  url   	= {https://publications.waset.org/vol/81},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 81, 2013},
	}