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Silicon Nanowire for Thermoelectric Applications: Effects of Contact Resistance

Authors: Y. Li, K. Buddharaju, N. Singh, G. Q. Lo, S. J. Lee

Abstract:

Silicon nanowire (SiNW) based thermoelectric device (TED) has potential applications in areas such as chip level cooling/ energy harvesting. It is a great challenge however, to assemble an efficient device with these SiNW. The presence of parasitic in the form of interfacial electrical resistance will have a significant impact on the performance of the TED. In this work, we explore the effect of the electrical contact resistance on the performance of a TED. Numerical simulations are performed on SiNW to investigate such effects on its cooling performance. Intrinsically, SiNW individually without the unwanted parasitic effect has excellent cooling power density. However, the cooling effect is undermined with the contribution of the electrical contact resistance.

Keywords: Thermoelectric, silicon, nanowire, electrical contact resistance, parasitics.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1055693

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References:


[1] Goldsmid, H.J. in CRC Handbook of Thermoelectrics (ed. Rowe, D.M.), CRC Press, Boca Raton, FL, Chapter 2& 19, 1995.
[2] L. D. Hicks, and M. S. Dresselhaus, "Thermoelectric figure of merit of a one-dimensional conductor", Physical Review B, vol. 47, no. 24, June 1993
[3] L. D. Hicks, and M. S. Dresselhaus, "Effect of quantum-well structures on the thermoelectric figure of merit", Physical Review B, vol. 47, no. 19, May 1993
[4] M. S. Dresselhaus, Y.M. Lin, G. Dresselhaus, X. Sun, Z. Zhang, S.B. Cronin, T. Koga and J.Y. Ying, "Advances in 1D and 2D Thermoelectric Materials", 18th International Conference of Thermoelectrics, 1999
[5] Allon I. Hochbaum, Renkun Chen, Raul Diaz Delgado, Wenjie Liang, Erik C. Garnett, Mark Najarian, Arun Majumdar and Peidong Yang, "Enhanced thermoelectric performance of rough silicon nanowires", Nature Letters, vol. 451, Janurary 2008
[6] L. Shi, D. Yao, G. Zhang, and B Li, "Size dependent thermoelectric properties of silicon nanowires", Applied Physics Letters, vol. 95, 063102, May 2009
[7] A. I. Boukai, Y. Bunimovich, J. Tahir-Kheli, J-K Yu, W. A. Goddardand J. R. Heath, "Silicon nanowires as efficient thermoelectric mateirals", Nature Letters, vol. 451, Janurary 2008
[8] G. Zhang, Q. Zhang, C. T. Bui, G. Q. Lo, and B Li, "Thermoelectric performance of silicon nanowires", Applied Physics Letters, vol. 94, 213108-1, May 2009
[9] Effects of Nanoscale Contacts to Silicon Nanowires on Contact Resistance: Characterization and Modeling, Joshua T. Smith et al, Proceedings, DRC 2010, 2010
[10] On the effect of the electrical contact resistance in nanodevices, T. Schwamb et al, APL, 92, 243106, June 2008
[11] Contact Resistance of Epitaxially Interfaced Bridged SiliconNanowires, A. Chaudhry et al, Proceedings, International conference on Nanotechnology, 2007
[12] COMSOL MULTIPHYSICS by COMSOL ┬®.