Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2976

Search results for: Field Induced Barrier Lowering (FIBL)

2976 Improvement of Short Channel Effects in Cylindrical Strained Silicon Nanowire Transistor

Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility in tensile strained silicon, the n-type FETs with strained silicon channel have better drain current compare with the pure Si one. In this structure gate dielectric divided in two parts, we have used high-κ dielectric near the source and low-κ dielectric near the drain to reduce the short channel effects. By this structure short channel effects such as FIBL will be reduced indeed by increasing the RSiGe, ID-VD characteristics will be improved. The leakage current and transfer characteristics, the threshold-voltage (Vt), the drain induced barrier height lowering (DIBL), are estimated with respect to, gate bias (VG), RSiGe and different gate dielectrics. For short channel effects, such as DIBL, gate all around strained silicon nanowire FET have similar characteristics with the pure Si one while dual dielectrics can improve short channel effects in this structure.

Keywords: SNWT (silicon nanowire transistor), Tensile Strain, high-κ dielectric, Field Induced Barrier Lowering (FIBL), cylindricalnano wire (CW), drain induced barrier lowering (DIBL).

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2975 Characterization of the LMOS with Different Channel Structure

Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

Abstract:

In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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2974 Temperature-Dependent Barrier Characteristics of Inhomogeneous Pd/n-GaN Schottky Barrier Diodes Surface

Authors: K. Al-Heuseen, M. R. Hashim

Abstract:

The current-voltage (I-V) characteristics of Pd/n-GaN Schottky barrier were studied at temperatures over room temperature (300-470K). The values of ideality factor (n), zero-bias barrier height (φB0), flat barrier height (φBF) and series resistance (Rs) obtained from I-V-T measurements were found to be strongly temperature dependent while (φBo) increase, (n), (φBF) and (Rs) decrease with increasing temperature. The apparent Richardson constant was found to be 2.1x10-9 Acm-2K-2 and mean barrier height of 0.19 eV. After barrier height inhomogeneities correction, by assuming a Gaussian distribution (GD) of the barrier heights, the Richardson constant and the mean barrier height were obtained as 23 Acm-2K-2 and 1.78eV, respectively. The corrected Richardson constant was very closer to theoretical value of 26 Acm-2K-2. 

Keywords: Electrical properties, Gaussian distribution, Pd-GaN Schottky diodes, thermionic emission.

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2973 Fabrication of High-Power AlGaN/GaN Schottky Barrier Diode with Field Plate Design

Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

Abstract:

In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.

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2972 Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor

Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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2971 3D Quantum Numerical Simulation of Horizontal Rectangular Dual Metal Gate\Gate All Around MOSFETs

Authors: M. Khaouani, A. Guen-Bouazza, B. Bouazza, Z. Kourdi

Abstract:

The integrity and issues related to electrostatic performance associated with scaling Si MOSFET bulk sub 10nm channel length promotes research in new device architectures such as SOI, double gate and GAA MOSFET. In this paper, we present some novel characteristic of horizontal rectangular gate\gate all around MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure, that having a direct impact on their threshold voltage and drain current. In addition, our TFET showed reasonable ION/IOFF ratio of (104) and low drain induced barrier lowering (DIBL) of 39 mV/V.

Keywords: GAA, SILVACO, QUANTUM, MOSFETs.

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2970 Decomposition of Graphs into Induced Paths and Cycles

Authors: I. Sahul Hamid, Abraham V. M.

Abstract:

A decomposition of a graph G is a collection ψ of subgraphs H1,H2, . . . , Hr of G such that every edge of G belongs to exactly one Hi. If each Hi is either an induced path or an induced cycle in G, then ψ is called an induced path decomposition of G. The minimum cardinality of an induced path decomposition of G is called the induced path decomposition number of G and is denoted by πi(G). In this paper we initiate a study of this parameter.

Keywords: Path decomposition, Induced path decomposition, Induced path decomposition number.

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2969 A Comprehensive Approach in Calculating the Impact of the Ground on Radiated Electromagnetic Fields Due to Lightning

Authors: Lahcene Boukelkoul

Abstract:

The influence of finite ground conductivity is of great importance in calculating the induced voltages from the radiated electromagnetic fields due to lightning. In this paper, we try to give a comprehensive approach to calculate the impact of the ground on the radiated electromagnetic fields to lightning. The vertical component of lightning electric field is calculated with a reasonable approximation assuming a perfectly conducting ground in case the observation point does not exceed a few kilometers from the lightning channel. However, for distant observation points the radiated vertical component of lightning electric field is attenuated due finitely conducting ground. The attenuation is calculated using the expression elaborated for both low and high frequencies. The horizontal component of the electric field, however, is more affected by a finite conductivity of a ground. Besides, the contribution of the horizontal component of the electric field, to induced voltages on an overhead transmission line, is greater than that of the vertical component. Therefore, the calculation of the horizontal electric field is great concern for the simulation of lightning-induced voltages. For field to transmission lines coupling the ground impedance is calculated for early time behavior and for low frequency range.

Keywords: Ground impedance, horizontal electric field, lightning, transient propagation, vertical electric field.

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2968 Induced Graphoidal Covers in a Graph

Authors: K. Ratan Singh, P. K. Das

Abstract:

An induced graphoidal cover of a graph G is a collection ψ of (not necessarily open) paths in G such that every path in ψ has at least two vertices, every vertex of G is an internal vertex of at most one path in ψ, every edge of G is in exactly one path in ψ and every member of ψ is an induced cycle or an induced path. The minimum cardinality of an induced graphoidal cover of G is called the induced graphoidal covering number of G and is denoted by ηi(G) or ηi. Here we find induced graphoidal cover for some classes of graphs.

Keywords: Graphoidal cover, Induced graphoidal cover, Induced graphoidal covering number.

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2967 Design Criteria for Achieving Acceptable Indoor Radon Concentration

Authors: T. Valdbjørn Rasmussen

Abstract:

Design criteria for achieving an acceptable indoor radon concentration are presented in this paper. The paper suggests three design criteria. These criteria have to be considered at the early stage of the building design phase to meet the latest recommendations from the World Health Organization in most countries. The three design criteria are; first, establishing a radon barrier facing the ground; second, lowering the air pressure in the lower zone of the slab on ground facing downwards; third, diluting the indoor air with outdoor air. The first two criteria can prevent radon from infiltrating from the ground, and the third criteria can dilute the indoor air. By combining these three criteria, the indoor radon concentration can be lowered achieving an acceptable level. In addition, a cheap and reliable method for measuring the radon concentration in the indoor air is described. The provision on radon in the Danish Building Regulations complies with the latest recommendations from the World Health Organization. Radon can cause lung cancer and it is not known whether there is a lower limit for when it is not harmful to human beings. Therefore, it is important to reduce the radon concentration as much as possible in buildings. Airtightness is an important factor when dealing with buildings. It is important to avoid air leakages in the building envelope both facing the atmosphere, e.g. in compliance with energy requirements, but also facing the ground, to meet the requirements to ensure and control the indoor environment. Infiltration of air from the ground underneath a building is the main providing source of radon to the indoor air.

Keywords: Radon, natural radiation, barrier, pressure lowering, ventilation.

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2966 Measurement of I-V Characteristics of a PtSi/p-Si Schottky Barrier Diode at low Temperatures

Authors: Somayeh Gholami, Meysam Khakbaz

Abstract:

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.

Keywords: Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.

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2965 A Highly Efficient Process Applying Sige Film to Generate Quasi-Beehive Si Nanostructure for the Growth of Platinum Nanopillars with High Emission Property for the Applications of X-Ray Tube

Authors: Pin-Hsu Kao, Wen-Shou Tseng, Hung-Ming Tai, Yuan-Ming Chang, Jenh-Yih Juang

Abstract:

We report a lithography-free approach to fabricate the biomimetics, quasi-beehive Si nanostructures (QBSNs), on Si-substrates. The self-assembled SiGe nanoislands via the strain induced surface roughening (Asaro-Tiller-Grinfeld instability) during in-situ annealing play a key role as patterned sacrifice regions for subsequent reactive ion etching (RIE) process performed for fabricating quasi-beehive nanostructures on Si-substrates. As the measurements of field emission, the bare QBSNs show poor field emission performance, resulted from the existence of the native oxide layer which forms an insurmountable barrier for electron emission. In order to dramatically improve the field emission characteristics, the platinum nanopillars (Pt-NPs) were deposited on QBSNs to form Pt-NPs/QBSNs heterostructures. The turn-on field of Pt-NPs/QBSNs is as low as 2.29 V/μm (corresponding current density of 1 μA/cm2), and the field enhancement factor (β-value) is significantly increased to 6067. More importantly, the uniform and continuous electrons excite light emission, due to the surrounding filed emitters from Pt-NPs/QBSNs, can be easily obtained. This approach does not require an expensive photolithographic process and possesses great potential for applications.

Keywords: Biomimetics, quasi-beehive Si, SiGe nanoislands, platinum nanopillars, field emission.

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2964 A Novel 14 nm Extended Body FinFET for Reduced Corner Effect, Self-Heating Effect, and Increased Drain Current

Authors: Cheng-Hsien Chang, Jyi-Tsong Lin, Po-Hsieh Lin, Hung-Pei Hsu, Chan-Hsiang Chang, Ming-Tsung Shih, Shih-Chuan Tseng, Min-Yan Lin

Abstract:

In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also investigated. According to the 3-D numerical simulation, the proposed structure has a firm structure, an acceptable short channel effect (SCE), a reduced series resistance, an increased on state drain current (I on) and a large normalized I DS. Furthermore, the structure can also improve corner effect and reduce self-heating effect due to the extended body. Our results show that the EBFinFET is excellent for nanoscale device.

Keywords: SOI, FinFET, tri-gate, self-heating effect.

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2963 Separating Permanent and Induced Magnetic Signature: A Simple Approach

Authors: O. J. G. Somsen, G. P. M. Wagemakers

Abstract:

Magnetic signature detection provides sensitive detection of metal objects, especially in the natural environment. Our group is developing a tabletop setup for magnetic signatures of various small and model objects. A particular issue is the separation of permanent and induced magnetization. While the latter depends only on the composition and shape of the object, the former also depends on the magnetization history. With common deperming techniques, a significant permanent signature may still remain, which confuses measurements of the induced component. We investigate a basic technique of separating the two. Measurements were done by moving the object along an aluminum rail while the three field components are recorded by a detector attached near the center. This is done first with the rail parallel to the Earth magnetic field and then with anti-parallel orientation. The reversal changes the sign of the induced- but not the permanent magnetization so that the two can be separated. Our preliminary results on a small iron block show excellent reproducibility. A considerable permanent magnetization was indeed present, resulting in a complex asymmetric signature. After separation, a much more symmetric induced signature was obtained that can be studied in detail and compared with theoretical calculations.

Keywords: Magnetic signature, data analysis, magnetization, deperming techniques.

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2962 Induced Acyclic Path Decomposition in Graphs

Authors: Abraham V. M., I. Sahul Hamid

Abstract:

A decomposition of a graph G is a collection ψ of graphs H1,H2, . . . , Hr of G such that every edge of G belongs to exactly one Hi. If each Hi is either an induced path in G, then ψ is called an induced acyclic path decomposition of G and if each Hi is a (induced) cycle in G then ψ is called a (induced) cycle decomposition of G. The minimum cardinality of an induced acyclic path decomposition of G is called the induced acyclic path decomposition number of G and is denoted by ¤Çia(G). Similarly the cyclic decomposition number ¤Çc(G) is defined. In this paper we begin an investigation of these parameters.

Keywords: Cycle decomposition, Induced acyclic path decomposition, Induced acyclic path decomposition number.

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2961 A Model for Analysis the Induced Voltage of 115 kV On-Line Acting on Neighboring 22 kV Off-Line

Authors: S. Woothipatanapan, S. Prakobkit

Abstract:

This paper presents a model for analysis the induced voltage of transmission lines (energized) acting on neighboring distribution lines (de-energized). From environmental restrictions, 22 kV distribution lines need to be installed under 115 kV transmission lines. With the installation of the two parallel circuits like this, they make the induced voltage which can cause harm to operators. This work was performed with the ATP-EMTP modeling to analyze such phenomenon before field testing. Simulation results are used to find solutions to prevent danger to operators who are on the pole.

Keywords: Transmission system, distribution system, induced voltage, off-line operation.

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2960 Induced Acyclic Graphoidal Covers in a Graph

Authors: K. Ratan Singh, P. K. Das

Abstract:

An induced acyclic graphoidal cover of a graph G is a collection ψ of open paths in G such that every path in ψ has atleast two vertices, every vertex of G is an internal vertex of at most one path in ψ, every edge of G is in exactly one path in ψ and every member of ψ is an induced path. The minimum cardinality of an induced acyclic graphoidal cover of G is called the induced acyclic graphoidal covering number of G and is denoted by ηia(G) or ηia. Here we find induced acyclic graphoidal cover for some classes of graphs.

Keywords: Graphoidal cover, Induced acyclic graphoidal cover, Induced acyclic graphoidal covering number.

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2959 Characteristics of Ozone Generated from Dielectric Barrier Discharge Plasma Actuators

Authors: R. Osada, S. Ogata, T. Segawa

Abstract:

Dielectric barrier discharge plasma actuators (DBD-PAs) have been developed for active flow control devices. However, it is necessary to reduce ozone produced by DBD toward practical applications using DBD-PAs. In this study, variations of ozone concentration, flow velocity, power consumption were investigated by changing exposed electrodes of DBD-PAs. Two exposed electrode prototypes were prepared: span-type with exposed electrode width of 0.1 mm, and normal-type with width of 5 mm. It was found that span-type shows lower power consumption and higher flow velocity than that of normal-type at Vp-p = 4.0-6.0 kV. Ozone concentration of span-type higher than normal-type at Vp-p = 4.0-8.0 kV. In addition, it was confirmed that catalyst located in downstream from the exposed electrode can reduce ozone concentration between 18 and 42% without affecting the induced flow.

Keywords: Dielectric barrier discharge plasma actuators, ozone diffusion, PIV measurement, power consumption.

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2958 Characterization of Electrohydrodynamic Force on Dielectric-Barrier-Discharge Plasma Actuator Using Fluid Simulation

Authors: Hiroyuki Nishida, Taku Nonomura, Takashi Abe

Abstract:

Wall-surface jet induced by the dielectric barrier discharge (DBD) has been proposed as an actuator for active flow control in aerodynamic applications. Discharge plasma evolution of the DBD plasma actuator was simulated based on a simple fluid model, in which the electron, one type of positive ion and negative ion were taken into account. Two-dimensional simulation was conducted, and the results are in agreement with the insights obtained from experimental studies. The simulation results indicate that the discharge mode changes depending on applied voltage slope; when the applied voltage is positive-going with high applied voltage slope, the corona-type discharge mode turns into the streamer-type discharge mode and the threshold voltage slope is around 300 kV/ms in this simulation. The characteristics of the electrohydrodynamic (EHD) force, which is the source of the wall-surface jet, also change depending on the discharge mode; the tentative peak value of the EHD force during the positive-going voltage phase is saturated by the periodical formation of the streamer-type discharge.

Keywords: Dielectric barrier discharge, Plasma actuator, Fluid simulation.

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2957 Predicting the Adsorptive Capacities of Biosolid as a Barrier in Soil to Remove Industrial Contaminants

Authors: Hakim Aguedal, Hafida Hentit, Abdallah Aziz, Djillali Rida Merouani, Abdelkader Iddou

Abstract:

The major environmental risk of soil pollution is the contamination of groundwater by infiltration of organic and inorganic pollutants which can cause a serious menace. To prevent this risk and to protect the groundwater, we proceeded in this study to test the reliability of a biosolid as barrier to prevent the migration of very dangerous pollutants as ‘Cadmium’ through the different soil layers. In this study, we tried to highlight the effect of several parameters such as: turbidity (different cycle of Hydration/Dehydration), rainfall, effect of initial Cd(II) concentration and the type of soil. These parameters allow us to find the most effective manner to integrate this barrier in the soil. From the results obtained, we found a significant effect of the barrier. Indeed, the recorded passing quantities are lowest for the highest rainfall; we noted also that the barrier has a better affinity towards higher concentrations; the most retained amounts of cadmium has been in the top layer of the two types of soil tested, while the lowest amounts of cadmium are recorded in the bottom layers of soils.

Keywords: Adsorption of Cadmium, Barrier, Groundwater Pollution, Protection.

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2956 Silicon-Waveguide Based Silicide Schottky- Barrier Infrared Detector for on-Chip Applications

Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

Keywords: Infrared detector, Schottky-barrier, Silicon waveguide, Silicon photonics

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2955 Coupling Phenomenon between the Lightning and High Voltage Networks

Authors: Dib Djalel, Haddouche Ali, Chellali Benachiba

Abstract:

When a lightning strike falls near an overhead power line, the intense electromagnetic field radiated by the current of the lightning return stroke coupled with power lines and there induced transient overvoltages, which can cause a back-flashover in electrical network. The indirect lightning represents a major danger owing to the fact that it is more frequent than that which results from the direct strikes. In this paper we present an analysis of the electromagnetic coupling between an external electromagnetic field generated by the lightning and an electrical overhead lines, so we give an important and original contribution: We are based on our experimental measurements which we carried in the high voltage laboratories of EPFL in Switzerland during the last trimester of 2005, on the recent works of other authors and with our mathematical improvement a new particular analytical expression of the electromagnetic field generated by the lightning return stroke was developed and presented in this paper. The results obtained by this new electromagnetic field formulation were compared with experimental results and give a reasonable approach.

Keywords: Lightning, overhead lines, electromagneticcoupling, return stroke, models, induced overvoltages.

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2954 A Comparison Study of Electrical Characteristics in Conventional Multiple-gate Silicon Nanowire Transistors

Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper electrical characteristics of various kinds of multiple-gate silicon nanowire transistors (SNWT) with the channel length equal to 7 nm are compared. A fully ballistic quantum mechanical transport approach based on NEGF was employed to analyses electrical characteristics of rectangular and cylindrical silicon nanowire transistors as well as a Double gate MOS FET. A double gate, triple gate, and gate all around nano wires were studied to investigate the impact of increasing the number of gates on the control of the short channel effect which is important in nanoscale devices. Also in the case of triple gate rectangular SNWT inserting extra gates on the bottom of device can improve the application of device. The results indicate that by using gate all around structures short channel effects such as DIBL, subthreshold swing and delay reduces.

Keywords: SNWT (silicon nanowire transistor), non equilibriumGreen's function (NEGF), double gate (DG), triple gate (TG), multiple gate, cylindrical nano wire (CW), rectangular nano wire(RW), Poisson_ Schrödinger solver, drain induced barrier lowering(DIBL).

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2953 Raman Spectroscopy of Carbon Nanostructures in Strong Magnetic Field

Authors: M. Kalbac, T. Verhagen, K. Drogowska, J. Vejpravova

Abstract:

One- and two-dimensional carbon nanostructures with sp2 hybridization of carbon atoms (single walled carbon nanotubes and graphene) are promising materials in future electronic and spintronics devices due to specific character of their electronic structure. In this paper we present a comparative study of graphene and single-wall carbon nanotubes by Raman spectro-microscopy in strong magnetic field. This unique method allows to study changes in electronic band structure of the two types of carbon nanostructures induced by a strong magnetic field.

Keywords: Carbon nanostructures, magnetic field, Raman spectroscopy.

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2952 Investigation of Multiple Material Gate Impact on Short Channel Effects and Reliability of Nanoscale SOI MOSFETs

Authors: Paniz Tafakori, Ali A. Orouji

Abstract:

In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material structures

Keywords: Short-channel effects (SCEs), Dual material gate (DMG), Triple material gate (TMG), Pentamerous material gate (PMG).

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2951 Various Modifications of Electrochemical Barrier Layer Thinning of Anodic Aluminum Oxide

Authors: W. J. Stępniowski, W. Florkiewicz, M. Norek, M. Michalska-Domańska, E. Kościuczyk, T. Czujko

Abstract:

In this paper, two options of anodic alumina barrier layer thinning have been demonstrated. The approaches varied with the duration of the voltage step. It was found that too long step of the barrier layer thinning process leads to chemical etching of the nanopores on their top. At the bottoms pores are not fully opened what is disadvantageous for further applications in nanofabrication. On the other hand, while the duration of the voltage step is controlled by the current density (value of the current density cannot exceed 75% of the value recorded during previous voltage step) the pores are fully opened. However, pores at the bottom obtained with this procedure have smaller diameter, nevertheless this procedure provides electric contact between the bare aluminum (substrate) and electrolyte, what is suitable for template assisted electrodeposition, one of the most cost-efficient synthesis method in nanotechnology.

Keywords: Anodic aluminum oxide, anodization, barrier layer thinning, nanopores.

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2950 Recent Advances in Energy Materials for Hot Sections of Modern Gas-Turbine Engines

Authors: Zainul Huda

Abstract:

This presentation reviews recent advances in superalloys and thermal barrier coating (TBC) for application in hot sections of energy-efficient gas-turbine engines. It has been reviewed that in the modern combined-cycle gas turbines (CCGT) applying single-crystal energy materials (SC superalloys) and thermal barrier coatings (TBC), and – in one design – closed-loop steam cooling, thermal efficiency can reach more than 60%. These technological advancements contribute to profitable and clean power generation with reduced emission. Alternatively, the use of advanced superalloys (e.g. GTD-111 superalloy, Allvac 718Plus superalloy) and advanced thermal barrier coatings (TBC) in modern gas-turbines has been shown to yield higher energy-efficiency in power generation.

Keywords: Energy materials, gas turbine engines, superalloy, thermal barrier coating

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2949 Comparative Life Cycle Assessment of High Barrier Polymer Packaging for Selecting Resource Efficient and Environmentally Low-Impact Materials

Authors: D. Kliaugaitė, J. K, Staniškis

Abstract:

In this study tree types of multilayer gas barrier plastic packaging films were compared using life cycle assessment as a tool for resource efficient and environmentally low-impact materials selection. The first type of multilayer packaging film (PET-AlOx/LDPE) consists of polyethylene terephthalate with barrier layer AlOx (PET-AlOx) and low density polyethylene (LDPE). The second type of polymer film (PET/PE-EVOH-PE) is made of polyethylene terephthalate (PET) and co-extrusion film PE-EVOH-PE as barrier layer. And the third one type of multilayer packaging film (PET-PVOH/LDPE) is formed from polyethylene terephthalate with barrier layer PVOH (PET-PVOH) and low density polyethylene (LDPE).

All of analyzed packaging has significant impact to resource depletion, because of raw materials extraction and energy use and production of different kind of plastics. Nevertheless the impact generated during life cycle of functional unit of II type of packaging (PET/PE-EVOH-PE) was about 25% lower than impact generated by I type (PET-AlOx/LDPE) and III type (PET-PVOH/LDPE) of packaging.

Result revealed that the contribution of different gas barrier type to the overall environmental problem of packaging is not significant. The impact are mostly generated by using energy and materials during raw material extraction and production of different plastic materials as plastic polymers material as PE, LDPE and PET, but not gas barrier materials as AlOx, PVOH and EVOH.

The LCA results could be useful in different decision-making processes, for selecting resource efficient and environmentally low-impact materials.

Keywords: Polymer packaging, life cycle assessment, resource efficiency.

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2948 Barriers to Marital Expectation among Individuals with Hearing Impairment in Oyo State

Authors: Adebomi M. Oyewumi, Sunday Amaize

Abstract:

The study was designed to examine the barriers to marital expectations among unmarried persons with hearing impairment in Oyo State, Nigeria. Descriptive survey research design was adopted. Purposive sampling technique was used to select one hundred participants made up forty-four (44) males and fifty-six (56) females, all with varying degrees of hearing impairment. Eight research questions were raised and answered. The instrument used was Marital Expectations Scale with reliability coefficient of 0.86. Data was analyzed using descriptive statistics tools of frequency count and simple percentage as well as inferential statistics tools of T-TEST and ANOVA. The findings revealed that there was a significant relationship existing among the main identified barriers (environmental barrier, communication barrier, hearing loss, unemployment and poor sexuality education) to the marital expectations of unmarried persons with hearing impairment. The joint contribution of the independent variables (identified barriers) to the dependent variable (marital expectations) was significant, F = 5.842, P < 0.05, accounting for about 89% of the variance. The relative contribution of the identified barriers to marital expectations of unmarried persons with hearing impairment is as follows: environmental barrier (β = 0.808, t = 5.176, P < 0.05), communication barrier (β = 0.533, t = 3.305, P < 0.05), hearing loss (β = 0.550, t = 2.233, P < 0.05), unemployment (β = 0.431, t = 2.102, P < 0.05), poor sexuality education (β = 0.361, t = 1.985, P < 0.05). Environmental barrier proved to be the most potent contributor to the poor marital expectations among unmarried persons with hearing impairment. Therefore, it is recommended that society dismantles the nagging environmental barrier through positive identification with individuals suffering from hearing impairment. In this connection, members of society should change their negative attitudes and do away with all the wrong notions about the marital ability of individuals with hearing impairment.

Keywords: Hearing impairment, marriage, marital expectations, barrier.

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2947 Statistical Characteristics of Distribution of Radiation-Induced Defects under Random Generation

Authors: Pavlo Selyshchev

Abstract:

We consider fluctuations of defects density taking into account their interaction. Stochastic field of displacement generation rate gives random defect distribution. We determinate statistical characteristics (mean and dispersion) of random field of point defect distribution as function of defect generation parameters, temperature and properties of irradiated crystal.

 

Keywords: Irradiation, Primary Defects, Interaction, Fluctuations.

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