A Comparison Study of Electrical Characteristics in Conventional Multiple-gate Silicon Nanowire Transistors

Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper electrical characteristics of various kinds of multiple-gate silicon nanowire transistors (SNWT) with the channel length equal to 7 nm are compared. A fully ballistic quantum mechanical transport approach based on NEGF was employed to analyses electrical characteristics of rectangular and cylindrical silicon nanowire transistors as well as a Double gate MOS FET. A double gate, triple gate, and gate all around nano wires were studied to investigate the impact of increasing the number of gates on the control of the short channel effect which is important in nanoscale devices. Also in the case of triple gate rectangular SNWT inserting extra gates on the bottom of device can improve the application of device. The results indicate that by using gate all around structures short channel effects such as DIBL, subthreshold swing and delay reduces.

Keywords: SNWT (silicon nanowire transistor), non equilibriumGreen's function (NEGF), double gate (DG), triple gate (TG), multiple gate, cylindrical nano wire (CW), rectangular nano wire(RW), Poisson_ Schrödinger solver, drain induced barrier lowering(DIBL).

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1328536

References:

[1] J. Wang, E. Polizzi and M. Lundstrom, "A computational study of ballistic silicon nanowire transistors," IEEE International Electron Dev. Meeting (IEDM), Tech.Digest, pp. 695-698, Dec. 8-10 2003.
[2] J.Saint-Martin, A.Bournel, Philippe, "Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation,"Dollfus Institut d'Electronique Fondamentale, UMR CNRS 8622, Université Paris Sud, B├ót. 220,F-91405 Orsay cedex, France.
[3] NANOTCAD ViDES User-s Manual by G. Fiori and G. Iannaccone Copyright c 2004-2008, Gianluca Fiori, Giuseppe Iannaccone, University of Pisa. www.NANOTCADVIDES.
[4] Silvaco International, Atlas User-s Manual, 2008.
[5] J.Wang, E. Polizzi, and M. Lundstrom IEDM Tech. Dig., 2003, pp. 29.5.1-29.5.4
[6] J.Wang, E. Polizzi, M. Lundstrom, A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation,J. Appl. Phys. 96 (2004) 2192-2203.
[7] G. Fiori, and G. Iannaccone" Three-Dimensional Simulation of One- Dimensional Transport in Silicon Nanowire Transistors" IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 6, NO. 5, SEPTEMBER 2007.
[8] R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and P. Avouris, Appl. Phys. Lett. 73, 2447 ~1998.
[9] A. Rahman, M. Lundstrom and A. W. Ghosh, "Generalized effectivemass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrary oriented wafers," J. Appl. Phys., vol. 97, pp. 053702.1-053702.12, Mar. 2005.
[10] R. Venugopal et al., "Simulating quantum transport in Nanoscale transistors: Real versus mode-space approaches," J. App. Phys.,92, 3730 (2002).
[11] S. H. Zaidi, A. K. Sharma, R. Marquardt, S. L. Lucero and P. M. Varangis, "Multiple nanowire field-effect transistors," Proc of the 2001 1st IEEE Conference on Nanotechnology, pp. 189-194, Oct. 2001.