Search results for: Subthreshold Drain Current and Effective Mobility Model.

Authors: Muhibul Haque Bhuyan, Quazi D. M. Khosru

Abstract:

Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and hence drain current. This paper presents an analytical model of the subthreshold drain current incorporating the effective electron mobility model of the pocket implanted nano scale n-MOSFET. The model is developed by assuming two linear pocket profiles at the source and drain edges at the surface and by using the conventional drift-diffusion equation. Effective electron mobility model includes three scattering mechanisms, such as, Coulomb, phonon and surface roughness scatterings as well as ballistic phenomena in the pocket implanted n-MOSFET. The model is simulated for various pocket profile and device parameters as well as for various bias conditions. Simulation results show that the subthreshold drain current data matches the experimental data already published in the literature.

Keywords: Linear Pocket Profile, Pocket Implanted n-MOSFET, Subthreshold Drain Current and Effective Mobility Model.

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Authors: Muhibul Haque Bhuyan, Quazi D. M. Khosru

Abstract:

Carriers scattering in the inversion channel of n- MOSFET dominates the drain current. This paper presents an effective electron mobility model for the pocket implanted nano scale n-MOSFET. The model is developed by using two linear pocket profiles at the source and drain edges. The channel is divided into three regions at source, drain and central part of the channel region. The total number of inversion layer charges is found for these three regions by numerical integration from source to drain ends and the number of depletion layer charges is found by using the effective doping concentration including pocket doping effects. These two charges are then used to find the effective normal electric field, which is used to find the effective mobility model incorporating the three scattering mechanisms, such as, Coulomb, phonon and surface roughness scatterings as well as the ballistic phenomena for the pocket implanted nano-scale n-MOSFET. The simulation results show that the derived mobility model produces the same results as found in the literatures.

Keywords: Linear Pocket Profile, Pocket Implanted n-MOSFET, Effective Electric Field and Effective Mobility Model.

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Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended S/D region. It is found that optimal Source/Drain-to-Gate Non-overlapped and high-k spacer structure has reduced the gate leakage current to great extent as compared to those of an overlapped structure. Further, the proposed structure had improved off current, subthreshold slope and DIBL characteristic. It is concluded that this structure solves the problem of high leakage current without introducing the extra series resistance.

Keywords: Gate tunneling current, analytical model, spacer dielectrics, DIBL, subthreshold slope.

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

Abstract:

In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Muhibul Haque Bhuyan

Abstract:

This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO₂), aluminum silicate (Al₂SiO₅), silicon nitride (Si₃N₄), alumina (Al₂O₃), hafnium silicate (HfSiO₄), tantalum pentoxide (Ta₂O₅), hafnium dioxide (HfO₂), zirconium dioxide (ZrO₂), and lanthanum oxide (La₂O₃) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

Keywords: Linear symmetric pocket profile, pocket implanted n-MOS Device, model, impact of gate material, insulator thickness.

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Authors: Anwar Jarndal

Abstract:

In this paper, a genetic-neural-network (GNN) based large-signal model for GaN HEMTs is presented along with its parameters extraction procedure. The model is easy to construct and implement in CAD software and requires only DC and S-parameter measurements. An improved decomposition technique is used to model self-heating effect. Two GNN models are constructed to simulate isothermal drain current and power dissipation, respectively. The two model are then composed to simulate the drain current. The modeling procedure was applied to a packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation with measured data. A very good agreement between the simulation and measurement is obtained.

Keywords: GaN HEMT, computer-aided design & modeling, neural networks, genetic optimization.

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Authors: Mohd. Hasan, Ajmal Kafeel, S. D. Pable

Abstract:

Ultra-low-power (ULP) circuits have received widespread attention due to the rapid growth of biomedical applications and Battery-less Electronics. Subthreshold region of transistor operation is used in ULP circuits. Major research challenge in the subthreshold operating region is to extract the ULP benefits with minimal degradation in speed and robustness. Process, Voltage and Temperature (PVT) variations significantly affect the performance of subthreshold circuits. Designed performance parameters of ULP circuits may vary largely due to temperature variations. Hence, this paper investigates the effect of temperature variation on device and circuit performance parameters at different biasing voltages in the subthreshold region. Simulation results clearly demonstrate that in deep subthreshold and near threshold voltage regions, performance parameters are significantly affected whereas in moderate subthreshold region, subthreshold circuits are more immune to temperature variations. This establishes that moderate subthreshold region is ideal for temperature immune circuits.

Keywords: Subthreshold, temperature variations, ultralow power.

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Authors: Cheng-Hsien Chang, Jyi-Tsong Lin, Po-Hsieh Lin, Hung-Pei Hsu, Chan-Hsiang Chang, Ming-Tsung Shih, Shih-Chuan Tseng, Min-Yan Lin

Abstract:

In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also investigated. According to the 3-D numerical simulation, the proposed structure has a firm structure, an acceptable short channel effect (SCE), a reduced series resistance, an increased on state drain current (I on) and a large normalized I DS. Furthermore, the structure can also improve corner effect and reduce self-heating effect due to the extended body. Our results show that the EBFinFET is excellent for nanoscale device.

Keywords: SOI, FinFET, tri-gate, self-heating effect.

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Authors: A. Hamdoune, M. Abdelmoumene, A. Hamroun

Abstract:

The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values ​​of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.

We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (f_T) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.

Keywords: n-GaN/AlGaN/GaN HEMT, drain-source current (IDS), transconductance (gm), cut-off frequency (fT), maximum oscillation frequency (fmax).

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Authors: Hardik Vaghela, Mamta Khosla, Balwindar Raj

Abstract:

In this paper, we present and investigate a double gate PN diode based tunnel field effect transistor (DGPNTFET). The importance of proposed structure is that the formation of different drain doping is not required and ambipolar effect in OFF state is completely removed for this structure. Validation of this structure to behave like a Tunnel Field Effect Transistor (TFET) is carried out through energy band diagrams and transfer characteristics. Simulated result shows point subthreshold slope (SS) of 19.14 mV/decade and ON to OFF current ratio (I_ON / I_OFF) of 2.66 × 10¹⁴ (I_ON at V_GS=1.5V, V_DS=1V and I_OFF at V_GS=0V, V_DS=1V) for gate length of 20nm and HfO₂ as gate oxide at room temperature. Which indicate that the DGPNTFET is a promising candidate for nano-scale, ambipolar free switch.

Keywords: Ambipolar effect, double gate PN diode based tunnel field effect transistor, high-κ dielectric material, subthreshold slope, tunnel field effect transistor.

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Authors: Priyanka Malik A, Rishu Chaujar B, Mridula Gupta C, R.S. Gupta D

Abstract:

In this paper, for the first time, a two-dimensional (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate leakages and increased standby power consumption that arise due to continued scaling of SiO2-based gate dielectrics. The twodimensional (2D) analytical model based on solution of Poisson-s equation in cylindrical coordinates, utilizing the cylindrical approximation, has been developed which evaluate the surface potential, electric field, drain current, switching metric: ION/IOFF ratio and transconductance for the proposed design. A good agreement between the model predictions and device simulation results is obtained, verifying the accuracy of the proposed analytical model.

Keywords: ATLAS, DEVEDIT, NJD, MLGME- TRCMOSFET.

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Authors: E. Yosry, W. Fikry, A. El-henawy, M. Marzouk

Abstract:

This work offers a study of new simple compact model of dual-drain Magnetic Field Effect Transistor (MAGFET) including geometrical effects and biasing dependency. An explanation of the sensitivity is investigated, involving carrier deflection as the dominant operating principle. Finally, model verification with simulation results is introduced to ensure that acceptable error of 2% is achieved.

Keywords: MAGFET, Modeling, Simulation, Split-drain.

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Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility in tensile strained silicon, the n-type FETs with strained silicon channel have better drain current compare with the pure Si one. In this structure gate dielectric divided in two parts, we have used high-κ dielectric near the source and low-κ dielectric near the drain to reduce the short channel effects. By this structure short channel effects such as FIBL will be reduced indeed by increasing the RSiGe, ID-VD characteristics will be improved. The leakage current and transfer characteristics, the threshold-voltage (Vt), the drain induced barrier height lowering (DIBL), are estimated with respect to, gate bias (VG), RSiGe and different gate dielectrics. For short channel effects, such as DIBL, gate all around strained silicon nanowire FET have similar characteristics with the pure Si one while dual dielectrics can improve short channel effects in this structure.

Keywords: SNWT (silicon nanowire transistor), Tensile Strain, high-κ dielectric, Field Induced Barrier Lowering (FIBL), cylindricalnano wire (CW), drain induced barrier lowering (DIBL).

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Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very important especially in context of low power application. In this paper, a simple and efficient analytical model has been developed for channel and source/drain overlap region gate tunneling current through ultra thin gate oxide n-channel MOSFET with inevitable deep submicron effect (DSME).The results obtained have been verified with simulated and reported experimental results for the purpose of validation. It is shown that the calculated tunnel current is well fitted to the measured one over the entire oxide thickness range. The proposed model is suitable enough to be used in circuit simulator due to its simplicity. It is observed that neglecting deep sub-micron effect may lead to large error in the calculated gate tunneling current. It is found that temperature has almost negligible effect on gate tunneling current. It is also reported that gate tunneling current reduces with the increase of gate oxide thickness. The impact of source/drain overlap length is also assessed on gate tunneling current.

Keywords: Gate tunneling current, analytical model, gate dielectrics, non uniform poly gate doping, MOSFET, fringing field effect and image charges.

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Authors: Costin Badica, Maria Ganzha, Marcin Paprzycki

Abstract:

Recently, a model multi-agent e-commerce system based on mobile buyer agents and transfer of strategy modules was proposed. In this paper a different approach to code mobility is introduced, where agent mobility is replaced by local agent creation supplemented by similar code mobility as in the original proposal. UML diagrams of agents involved in the new approach to mobility and the augmented system activity diagram are presented and discussed.

Keywords: Agent system, agent mobility, code mobility, e-commerce, UML formalization.

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Authors: Kahloul Laid, Chaoui Allaoua

Abstract:

Code mobility technologies attract more and more developers and consumers. Numerous domains are concerned, many platforms are developed and interest applications are realized. However, developing good software products requires modeling, analyzing and proving steps. The choice of models and modeling languages is so critical on these steps. Formal tools are powerful in analyzing and proving steps. However, poorness of classical modeling language to model mobility requires proposition of new models. The objective of this paper is to provide a specific formalism “Coloured Reconfigurable Nets" and to show how this one seems to be adequate to model different kinds of code mobility.

Keywords: Code mobility, modelling mobility, labelled reconfigurable nets, Coloured reconfigurable nets, mobile code design paradigms.

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Authors: K. Lisinchuk

Abstract:

An effective approach to the management of international educational mobility in regional universities with the purpose of increasing tourist activity in the region is considered.

Keywords: Export and import of tourist and educational services, international academic mobility, regional tourist activities.

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Authors: Muhammad Wajid Tahir, Rubina Kauser, Majid Ali Tahir

Abstract:

Pakistani doctors (MBBS) are emigrating towards developed countries for professional adjustments. This study aims to highlight causes and consequences of doctors- brain drain from Pakistan. Primary data was collected from Mayo Hospital, Lahore by interviewing doctors (n=100) through systematic random sampling technique. It found that various socio-economic and political conditions are working as push and pull factors for brain drain of doctors in Pakistan. Majority of doctors (83%) declared poor remunerations and professional infrastructure of health department as push factor of doctors- brain drain. 81% claimed that continuous instability in political situation and threats of terrorism are responsible for emigration of doctors. 84% respondents considered fewer opportunities of further studies responsible for their emigration. Brain drain of doctors is affecting health sector-s policies / programs, standard doctor-patient ratios and quality of health services badly.

Keywords: Brain Drain, Emigration, Remuneration, Politicalinstability, MBBS doctors

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Authors: Muhibul Haque Bhuyan, Quazi Deen Mohd Khosru

Abstract:

This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.

Keywords: Linear pocket profile, pocket implantation, nMOSFET, threshold voltage, short channel effect (SCE), reverse short channeleffect (RSCE).

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Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

Abstract:

We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

Abstract:

In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.

Keywords: Dual material gate, suppressing ambipolar current, symmetrically doped TFET, tunnel FETs, PNPN TFET.

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Authors: Tamer ElSerafi

Abstract:

In recent approaches to heritage conservation, the whole context of historic areas becomes as important as the single historic building. This makes the provision of infrastructure and network of mobility an effective element in the urban conservation. Sustainable urban conservation projects consider the high density of activities, the need for a good quality access system to the transit system, and the importance of the configuration of the mobility network by identifying the best way to connect the different districts of the urban area through a complex unique system that helps the synergic development to achieve a sustainable mobility system. A sustainable urban mobility is a key factor in maintaining the integrity between socio-cultural aspects and functional aspects. This paper illustrates the mobility aspects, mobility problems in historic districts, and the needs of the mobility systems in the first part. The second part is a practical analysis for different mobility plans. It is challenging to find innovative and creative conservation solutions fitting modern uses and needs without risking the loss of inherited built resources. Urban mobility management is becoming an essential and challenging issue in the urban conservation projects. Depending on literature review and practical analysis, this paper tries to define and clarify the guidelines for mobility management in historic districts as a key element in sustainability of urban conservation and development projects. Such rules and principles could control the conflict between the socio–cultural and economic activities, and the different needs for mobility in these districts in a sustainable way. The practical analysis includes a comparison between mobility plans which have been implemented in four different cities; Freiburg in Germany, Zurich in Switzerland and Bray Town in Ireland. This paper concludes with a matrix of guidelines that considers both principles of sustainability and livability factors in urban historic districts.

Keywords: Sustainable mobility, urban mobility, mobility management, historic districts.

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Authors: Hasanul Ferdaus, Sazzadur Rahman, Kamrul Islam

Abstract:

With the rapid usage of portable devices mobility in IP networks becomes more important issue in the recent years. IETF standardized Mobile IP that works in Network Layer, which involves tunneling of IP packets from HA to Foreign Agent. Mobile IP suffers many problems of Triangular Routing, conflict with private addressing scheme, increase in load in HA, need of permanent home IP address, tunneling itself, and so on. In this paper, we proposed mobility management in Application Layer protocol SIP and show some comparative analysis between Mobile IP and SIP in context of mobility.

Keywords: Mobility, mobile IP, SIP, tunneling.

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Authors: Youguo Wang, Lenan Wu

Abstract:

Stochastic resonance (SR) is a phenomenon whereby the signal transmission or signal processing through certain nonlinear systems can be improved by adding noise. This paper discusses SR in nonlinear signal detection by a simple test statistic, which can be computed from multiple noisy data in a binary decision problem based on a maximum a posteriori probability criterion. The performance of detection is assessed by the probability of detection error Per . When the input signal is subthreshold signal, we establish that benefit from noise can be gained for different noises and confirm further that the subthreshold SR exists in nonlinear signal detection. The efficacy of SR is significantly improved and the minimum of Per can dramatically approach to zero as the sample number increases. These results show the robustness of SR in signal detection and extend the applicability of SR in signal processing.

Keywords: Probability of detection error, signal detection, stochastic resonance.

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Authors: N. Nouali, H. Drias, A. Doucet

Abstract:

During more than a decade, many proposals and standards have been designed to deal with the mobility issues; however, there are still some serious limitations in basing solutions on them. In this paper we discuss the possibility of handling mobility at the application layer. We do this while revisiting the conventional implementation of the Two Phase Commit (2PC) protocol which is a fundamental asset of transactional technology for ensuring the consistent commitment of distributed transactions. The solution is based on an execution framework providing an efficient extension that is aware of the mobility and preserves the 2PC principle.

Keywords: Application layer, distributed mobile protocols, mobility management, mobile transaction processing.

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Authors: M. Khaouani, A. Guen-Bouazza, B. Bouazza, Z. Kourdi

Abstract:

The integrity and issues related to electrostatic performance associated with scaling Si MOSFET bulk sub 10nm channel length promotes research in new device architectures such as SOI, double gate and GAA MOSFET. In this paper, we present some novel characteristic of horizontal rectangular gate\gate all around MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure, that having a direct impact on their threshold voltage and drain current. In addition, our TFET showed reasonable I_ON/I_OFF ratio of (10⁴) and low drain induced barrier lowering (DIBL) of 39 mV/V.

Keywords: GAA, SILVACO, QUANTUM, MOSFETs.

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Authors: S. Murr, S. Phillips

Abstract:

One of the biggest challenges entering a market with a carsharing or any other shared mobility (SM) service is sound investment decision-making. To support this process, the authors think that a city index evaluating different criteria is necessary. The goal of such an index is to benchmark cities along a set of external measures to answer the main two challenges: financially viability and the understanding of its specific requirements. The authors have consulted several shared mobility projects and industry experts to create such a Shared Mobility City Index (SMCI). The current proposal of the SMCI consists of 11 individual index measures: general data (demographics, geography, climate and city culture), shared mobility landscape (current SM providers, public transit options, commuting patterns and driving culture) and political vision and goals (vision of the Mayor, sustainability plan, bylaws/tenders supporting SM). To evaluate the suitability of the index, 16 cities on the East Coast of North America were selected and secondary research was conducted. The main sources of this study were census data, organisational records, independent press releases and informational websites. Only non-academic sources where used because the relevant data for the chosen cities is not published in academia. Applying the index measures to the selected cities resulted in three major findings. Firstly, density (city area divided by number of inhabitants) is not an indicator for the number of SM services offered: the city with the lowest density has five bike and carsharing options. Secondly, there is a direct correlation between commuting patterns and how many shared mobility services are offered. New York, Toronto and Washington DC have the highest public transit ridership and the most shared mobility providers. Lastly, except one, all surveyed cities support shared mobility with their sustainability plan. The current version of the shared mobility index is proving a practical tool to evaluate cities, and to understand functional, political, social and environmental considerations. More cities will have to be evaluated to refine the criteria further. However, the current version of the index can be used to assess cities on their suitability for shared mobility services and will assist investors deciding which city is a financially viable market.

Keywords: Carsharing, transportation, urban planning, shared mobility city index.

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Authors: Emad A. Ahmed

Abstract:

Computer software to calculate electron mobility with respect to different scattering mechanism has been developed. This software is adopted completely Graphical User Interface (GUI) technique and its interface has been designed by Microsoft Visual basic 6.0. As a case study the electron mobility of n-GaN was performed using this software. The behavior of the mobility for n-GaN due to elastic scattering processes and its relation to temperature and doping concentration were discussed. The results agree with other available theoretical and experimental data.

Keywords: Electron mobility, relaxation time, GaN, Scattering, Computer software, computation physics.

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Authors: Brahmjit Singh

Abstract:

Mobile IP has been developed to provide the continuous information network access to mobile users. In IP-based mobile networks, location management is an important component of mobility management. This management enables the system to track the location of mobile node between consecutive communications. It includes two important tasks- location update and call delivery. Location update is associated with signaling load. Frequent updates lead to degradation in the overall performance of the network and the underutilization of the resources. It is, therefore, required to devise the mechanism to minimize the update rate. Mobile IPv6 (MIPv6) and Hierarchical MIPv6 (HMIPv6) have been the potential candidates for deployments in mobile IP networks for mobility management. HMIPv6 through studies has been shown with better performance as compared to MIPv6. It reduces the signaling overhead traffic by making registration process local. In this paper, we present performance analysis of MIPv6 and HMIPv6 using an analytical model. Location update cost function is formulated based on fluid flow mobility model. The impact of cell residence time, cell residence probability and user-s mobility is investigated. Numerical results are obtained and presented in graphical form. It is shown that HMIPv6 outperforms MIPv6 for high mobility users only and for low mobility users; performance of both the schemes is almost equivalent to each other.

Keywords: Wireless networks, Mobile IP networks, Mobility management, performance analysis, Handover.

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Authors: Seyed Abolhasan Naeini, Ali Namaei

Abstract:

This study presents the effect of prefabricated vertical drain system properties on embankment behavior by calculating the settlement, lateral displacement and induced excess pore pressure by numerical method. In order to investigate this behavior, three different prefabricated vertical drains have been simulated under an embankment. The finite element software PLAXIS has been carried out for analyzing the displacements and excess pore pressures. The results showed that the consolidation time and induced excess pore pressure are highly depended to the discharge capacity of the prefabricated vertical drain. The increase in the discharge capacity leads to decrease the consolidation process and the induced excess pore pressure. Moreover, it was seen that the vertical drains spacing does not have any significant effect on the consolidation time. However, the increase in the drains spacing would decrease the system stiffness.

Keywords: Vertical drain, prefabricated, consolidation, embankment.

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